JP2015173233A - ウエーハ処理装置及びウエーハの処理方法 - Google Patents
ウエーハ処理装置及びウエーハの処理方法 Download PDFInfo
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- JP2015173233A JP2015173233A JP2014049333A JP2014049333A JP2015173233A JP 2015173233 A JP2015173233 A JP 2015173233A JP 2014049333 A JP2014049333 A JP 2014049333A JP 2014049333 A JP2014049333 A JP 2014049333A JP 2015173233 A JP2015173233 A JP 2015173233A
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- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 37
- 238000005406 washing Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims description 110
- 230000001681 protective effect Effects 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 119
- 238000005520 cutting process Methods 0.000 description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 239000007921 spray Substances 0.000 description 15
- 238000012986 modification Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000032258 transport Effects 0.000 description 7
- 238000005507 spraying Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
本発明の実施形態に係るウエーハ処理装置及びウエーハの処理方法を図面に基いて説明する。図1は、実施形態に係るウエーハ処理装置としての洗浄装置を備えた切削装置の構成例の斜視図である。図2は、実施形態に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。図3は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の洗浄乾燥ステップを示す断面図である。図4は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。
本発明の実施形態の変形例に係るウエーハ処理装置及びウエーハの処理方法を図面に基いて説明する。図5は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。図6は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。なお、図5及び図6において、前述した実施形態と同一部分には、同一符号を付して説明を省略する。
20 保持テーブル
21 保持部材
21a 保持面
23 紫外線照射部
24 吸引孔(吸引部)
24−1 吸引溝(吸引部)
30 洗浄乾燥手段
T 保護テープ
U 紫外線
W ウエーハ
WS 表面
WR 裏面
Claims (2)
- ウエーハの裏面側を保持して回転可能な保持テーブルと、該保持テーブルに保持されたウエーハの表面を洗浄し乾燥する洗浄乾燥手段とを備えたウエーハ処理装置であって、
該保持テーブルは、ウエーハ裏面を吸引保持する吸引部が形成され裏面全面を保持する保持面を有し且つ紫外線を透過する材質で形成された保持部材と、該保持部材の保持面と反対側に配設された紫外線照射部とを備えているウエーハ処理装置。 - 請求項1記載のウエーハ処理装置を使用してウエーハの処理を行うウエーハの処理方法であって、
裏面側に紫外線硬化型の保護テープが貼着されたウエーハの裏面側を該保持テーブルの保持面に吸引保持する吸引保持ステップと、
該吸引保持ステップを実施した後に、該保持テーブルを回転しつつ該洗浄乾燥手段によりウエーハ表面を洗浄乾燥する洗浄乾燥ステップと、
該洗浄乾燥ステップを実施した後に、該紫外線照射部によりウエーハ裏面全面に紫外線を照射する紫外線照射ステップと、
を備えるウエーハの処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014049333A JP6277021B2 (ja) | 2014-03-12 | 2014-03-12 | ウエーハ処理装置及びウエーハの処理方法 |
TW104104413A TWI639187B (zh) | 2014-03-12 | 2015-02-10 | Wafer processing device and wafer processing method |
KR1020150030244A KR20150106833A (ko) | 2014-03-12 | 2015-03-04 | 웨이퍼 처리 장치 및 웨이퍼 처리 방법 |
CN201510105224.3A CN104916567B (zh) | 2014-03-12 | 2015-03-11 | 晶片处理装置以及晶片的处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014049333A JP6277021B2 (ja) | 2014-03-12 | 2014-03-12 | ウエーハ処理装置及びウエーハの処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015173233A true JP2015173233A (ja) | 2015-10-01 |
JP6277021B2 JP6277021B2 (ja) | 2018-02-07 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2014049333A Active JP6277021B2 (ja) | 2014-03-12 | 2014-03-12 | ウエーハ処理装置及びウエーハの処理方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6277021B2 (ja) |
KR (1) | KR20150106833A (ja) |
CN (1) | CN104916567B (ja) |
TW (1) | TWI639187B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017185556A (ja) * | 2016-04-01 | 2017-10-12 | ソウ テクノロジー カンパニー、リミテッド | 半導体ストリップグラインダー |
JP2018008031A (ja) * | 2016-05-25 | 2018-01-18 | テレフレックス、ライフ、サイエンシーズ、アンリミテッド、カンパニーTeleflex Life Sciences Unlimited Company | すぐに使える(ready to use)カテーテル・アセンブリの製造方法およびすぐに使えるカテーテル・アセンブリ |
JP2021009981A (ja) * | 2019-07-03 | 2021-01-28 | 株式会社ディスコ | 加工装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10665507B2 (en) * | 2017-09-29 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Automated transfer and drying tool for process chamber |
JP7126750B2 (ja) * | 2018-03-20 | 2022-08-29 | 株式会社ディスコ | 切削装置 |
CN109712927A (zh) * | 2018-12-28 | 2019-05-03 | 天津洙诺科技有限公司 | 一种半导体晶片清洗机 |
Citations (13)
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JPH04212422A (ja) * | 1990-10-16 | 1992-08-04 | Sony Corp | 半導体処理装置 |
JPH09199460A (ja) * | 1996-01-22 | 1997-07-31 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH10144632A (ja) * | 1996-09-13 | 1998-05-29 | Fujitsu Ltd | 半導体装置の製造方法および製造装置 |
JP2005064151A (ja) * | 2003-08-08 | 2005-03-10 | Sanyo Electric Co Ltd | 半導体チップの供給方法及び装置 |
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-
2014
- 2014-03-12 JP JP2014049333A patent/JP6277021B2/ja active Active
-
2015
- 2015-02-10 TW TW104104413A patent/TWI639187B/zh active
- 2015-03-04 KR KR1020150030244A patent/KR20150106833A/ko not_active Application Discontinuation
- 2015-03-11 CN CN201510105224.3A patent/CN104916567B/zh active Active
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JPH04212422A (ja) * | 1990-10-16 | 1992-08-04 | Sony Corp | 半導体処理装置 |
JPH09199460A (ja) * | 1996-01-22 | 1997-07-31 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH10144632A (ja) * | 1996-09-13 | 1998-05-29 | Fujitsu Ltd | 半導体装置の製造方法および製造装置 |
JP2005064151A (ja) * | 2003-08-08 | 2005-03-10 | Sanyo Electric Co Ltd | 半導体チップの供給方法及び装置 |
JP2005347675A (ja) * | 2004-06-07 | 2005-12-15 | Fujitsu Ltd | 微小な構造を有する素子の製造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017185556A (ja) * | 2016-04-01 | 2017-10-12 | ソウ テクノロジー カンパニー、リミテッド | 半導体ストリップグラインダー |
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JP2021009981A (ja) * | 2019-07-03 | 2021-01-28 | 株式会社ディスコ | 加工装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104916567B (zh) | 2019-06-14 |
TW201539561A (zh) | 2015-10-16 |
CN104916567A (zh) | 2015-09-16 |
TWI639187B (zh) | 2018-10-21 |
JP6277021B2 (ja) | 2018-02-07 |
KR20150106833A (ko) | 2015-09-22 |
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