JP2015170694A - Method for manufacturing connection structure, and circuit connecting material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a connection structure that gives high connection reliability even when a periphery of a terminal is coated with a resist having a thickness larger than a height of the terminal, and a circuit connecting material.SOLUTION: The method for manufacturing a connection structure includes: a disposition step of disposing a first circuit member 10 and a second circuit member 20 with a circuit connecting material 30 interposed therebetween; and a press-bonding step of thermally press-bonding the first circuit member 10 and the second circuit member 20 at a predetermined temperature to obtain a connection structure. The first circuit member 10 includes: a first terminal part 12 where first terminals 12a are arranged; and a resist 13 formed in a periphery of the first terminal part 12 and having a thickness larger than a height of the first terminals 12a. The second circuit member 20 includes a second terminal part 22 where second terminals 22a having a smaller height than that of the first terminals 12a are arranged. The circuit connecting material 30 includes: a first layer 31 comprising a film-forming resin and a polymerizable compound and in contact with the first circuit member 10; and a second layer 32 comprising a film-forming resin, a polymerizable compound, a polymerization initiator, and conductive particles, and in contact with the second circuit member 20.

Description

  The present invention relates to a method for manufacturing a connection structure using a circuit connection material such as an anisotropic conductive film, and a circuit connection material.

  Conventionally, an anisotropic conductive film (ACF) is used for connection of fine wiring that is not suitable for solder connection. However, it has been used for connection of relatively rough wiring having a terminal width of 300 μm or more because of any advantage that enables low-temperature connection.

  The anisotropic conductive film designed for general fine wiring is eliminated by flowing out of the terminal area against the force of the binder forming the adhesive layer crushing, and the thickness of the adhesive layer of the terminal portion is made of conductive particles. By being thinner than the diameter, the conductive particles are crushed, and the design is to obtain good conductivity. However, when a terminal area having a relatively large area is to be connected, it is difficult to appropriately remove the binder between the terminals, and when the removal is insufficient, the remaining binder prevents conduction. The lack of binder removal was particularly noticeable when a circuit member in which the periphery of a terminal portion where a plurality of terminals are arranged is covered with a solder resist having a thickness larger than the height of the terminal is subjected to low-temperature pressure bonding.

JP 2011-32491 A

  The present invention solves the above-described problems in the prior art, and manufacture of a connection structure capable of obtaining high connection reliability even when the periphery of the terminal portion is covered with a resist having a thickness larger than the terminal height. Methods and circuit connection materials are provided.

  In order to solve the above-described problem, a manufacturing method of a connection structure according to the present invention includes a first terminal portion in which first terminals are arranged, and a periphery of the first terminal portion. A second circuit portion including a first circuit member including a resist having a thickness larger than the height of the first terminal, and a second terminal portion in which a second terminal having a lower height than the first terminal is arranged. A circuit member comprising a film-forming resin and a polymerizable compound, a first layer in contact with the first circuit member, the film-forming resin, the polymerizable compound, a polymerization initiator, and conductivity. A disposing step of interposing a circuit connecting material containing particles and having a second layer in contact with the second circuit member, and the first circuit member and the second circuit member A thermocompression bonding at a temperature to obtain a connection structure, and a film forming resin gas for the first layer. Transition temperature, characterized in that said the predetermined temperature of -50 in ° C. or higher and the second layer film formation of the resin having a glass transition temperature of + 35 ° C. or higher.

  The connection structure according to the present invention is obtained by the method for manufacturing the connection structure.

  In addition, the present invention includes a first terminal portion in which first terminals are arranged, and a resist formed around the first terminal portion and having a thickness larger than the height of the first terminal. A first circuit member and a second circuit member including a second terminal portion in which second terminals having a height lower than the terminals of the first circuit member are arranged are thermocompression bonded at a predetermined temperature. In the circuit connecting material, the film-forming resin and the polymerizable compound are contained, the first layer in contact with the first circuit member, the film-forming resin, the polymerizable compound, the polymerization initiator, and the conductive particles. And a second layer in contact with the second circuit member, wherein the glass transition temperature of the film-forming resin of the first layer is not less than −50 ° C. of the predetermined temperature and the second layer The glass transition temperature of the layer film-forming resin is + 35 ° C. or higher.

  In the present invention, the glass transition temperature of the film-forming resin of the first layer of the circuit connecting material is not less than −50 ° C. of the predetermined temperature at the time of pressure bonding and + 35 ° C. or more of the glass transition temperature of the film-forming resin of the second layer. Therefore, even when the periphery of the terminal portion is covered with a resist having a thickness larger than the terminal height, high connection reliability can be obtained.

FIG. 1 is a cross-sectional view showing an arrangement of a first circuit member, a second circuit member, and a circuit connection material. FIG. 2 is a plan view illustrating an example of a first circuit member including a resist formed around the terminal portion. FIG. 3 is a cross-sectional view showing a part of the terminal portion at AA in FIG.

Hereinafter, embodiments of the present invention will be described in detail in the following order.
1. 1. Manufacturing method of connection structure Example

<1. Manufacturing method of connection structure>
The manufacturing method of the connection structure according to the present embodiment is formed around the first terminal portion in which the first terminals are arranged and the first terminal portion, and has a thickness larger than the height of the first terminal. A first circuit member comprising a resist having a second circuit member, and a second circuit member comprising a second terminal portion in which second terminals lower than the height of the first terminal are arranged. An arrangement step of placing a circuit connecting material having a first layer in contact with the second layer and a second layer in contact with the second circuit member, and the first circuit member and the second circuit member at a predetermined temperature And a pressure-bonding step for obtaining a connection structure.

  Hereinafter, each step will be described in detail.

[Arrangement process]
FIG. 1 is a cross-sectional view showing an arrangement of a first circuit member, a second circuit member, and a circuit connection material. In the disposing step, the first circuit member 10 and the second circuit member 20 have a first layer 31 in contact with the first circuit member 10 and a second layer 32 in contact with the second circuit member 20. The connecting material 30 is interposed.

  FIG. 2 is a plan view showing an example of a first circuit member having a resist formed around the terminal portion, and FIG. 3 is a cross-sectional view showing a part of the terminal portion at AA in FIG. is there. FIG. 1 is a cross-sectional view showing a part of the terminal portion at BB in FIG.

  As shown in FIGS. 1 to 3, the first circuit member 10 includes a first base member 11, a first terminal portion 12 in which first terminals 12 a are arranged, and a first terminal portion 12. And a resist 13 which is formed in the periphery and has a thickness t larger than the height h of the first terminal 12a.

  As the first base material 11, a base material used as an electronic circuit board material, for example, a glass epoxy board, a glass board, or the like can be used. The first terminal portion 12 has a plurality of terminals 12 a arranged on the first base material 11. The height h of the terminal 12a is, for example, 25 μm to 45 μm. Although the width of the terminal 12a is not particularly limited, in the present embodiment, high connection reliability can be obtained even with a wide terminal of 300 μm or more.

  The resist 13 is a solder resist that covers the surface of the first substrate 11 and serves as an insulating film that protects the circuit pattern. As shown in FIG. 2, the resist 13 covers the periphery of the first terminal portion 12, and as shown in FIG. 3, the height of the resist 13 is higher than the height h of the first terminal 12a. Has a large thickness t.

  Examples of the first circuit member 10 include a glass epoxy substrate for IC (Integrated Circuit) mounting, a glass substrate for LCD (Liquid Crystal Display) panel, and a plastic substrate such as cycloolefin (COP) for touch panel, A glass substrate etc. are mentioned.

  As shown in FIG. 1, the second circuit member 20 includes a second base material 21 and a second terminal portion 22 in which second terminals 22a are arranged. As the second base material 21, a base material used as an electronic circuit board material, such as polyimide, can be used. The second terminal portion 22 has a plurality of terminals 22 a arranged on the second base material 21. The height of the terminal 22a is, for example, 5 μm to 20 μm. Although the width of the terminal 12a is not particularly limited, in the present embodiment, high connection reliability can be obtained even at 300 μm or more.

  Examples of the second circuit member 20 include flexible substrates (FPC: Flexible Printed Circuits) such as COF (Chip On Film) and TCP (Tape Carrier Package), ICs, and the like.

  The circuit connection material 30 contains a film-forming resin and a polymerizable compound, the first layer 31 in contact with the first circuit member, the film-forming resin, the polymerizable compound, the polymerization initiator, and the conductivity. And a second layer 32 that is in contact with the second circuit member 20.

  The film-forming resin of the first layer 31 and the second layer 32 is such that the glass transition temperature of the film-forming resin of the first layer 31 is −50 ° C. or higher of the pressure bonding temperature in the pressure bonding step and the film of the second layer 32 It is selected to be + 35 ° C. or higher of the glass transition temperature of the forming resin. Thus, after the binder of the first layer 31 is appropriately excluded between the terminals, the second layer 32 containing conductive particles is not so much excluded between the left and right terminals and remains between the upper and lower terminals. Therefore, moderate conduction performance can be obtained.

  When the glass transition temperature of the film-forming resin of the first layer 31 is less than −50 ° C., which is the pressure bonding temperature, the fluidity becomes excessive, and the binder excluded between the terminals flows away to the outside of the terminals. The terminal part cannot be filled. For this reason, floating occurs in the reliability test, and the conduction performance deteriorates. Moreover, when the glass transition temperature of the film-forming resin of the first layer 31 is higher than the pressure bonding temperature, the binder on the terminal cannot be completely excluded. Further, when the glass transition temperature of the film forming resin of the first layer 31 is less than + 35 ° C. of the glass transition temperature of the film forming resin of the second layer 32, the first layer 31 and the second layer 32 The binder will flow in the same manner and the conduction performance will be reduced.

The glass transition temperature of the film-forming resin can be calculated as a theoretical glass transition temperature represented by the following formula (1) (FOX formula).
1 / Tg = W1 / T1 + W2 / T2 +... Wn / Tn (1)
In the formula (1), W1, W2,... Wn are mass fractions of each monomer, and T1, T2,... Tn are glass transition temperatures (K) of the respective monomers.

  As the film forming resin, a thermoplastic elastomer such as phenoxy resin, epoxy resin, polyester resin, polyurethane resin, polyamide, EVA, or the like can be used. Among these, it is preferable to use a bisphenol A type phenoxy resin synthesized from bisphenol A and epichlorohydrin for heat resistance and adhesiveness.

  The thickness of the first layer 31 is preferably 10 to 75% of the height of the first terminal 12a. Thereby, even when the periphery of the first terminal portion 12 is covered with the resist 13 having a thickness larger than the height of the terminal 12a, high connection reliability can be obtained.

  Further, the polymerizable compound of the first layer 31 and the second layer 32 is preferably a radical polymerizable compound, and the polymerization initiator of the second layer 32 is preferably an organic peroxide. Due to the incompatibility of the film-forming resin and the radically polymerizable compound, appropriate fluidity can be obtained.

  Examples of the radical polymerizable compound include urethane acrylate, polyethylene glycol diacrylate, phosphate ester acrylate, tricyclodecane dimethanol dimethacrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 4-hydroxybutyl acrylate, isobutyl acrylate, t-butyl acrylate, isooctyl acrylate, bisphenoxyethanol full orange acrylate, 2-acryloyloxyethyl succinic acid, lauryl acrylate, stearyl acrylate, isobornyl acrylate, cyclohexyl acrylate, tris (2-hydroxyethyl) isocyanurate triacrylate, Tetrahydrofurfuryl acrylate, o-phthalic acid diglycidyl ether , Ethoxylated bisphenol A dimethacrylate, bisphenol A type epoxy acrylate, epoxy acrylate, and corresponding to these (meth) acrylate. Among these, it is preferable to use urethane acrylate and polyethylene glycol diacrylate in combination from the viewpoint of improving conduction reliability and improving adhesiveness.

  Examples of the organic peroxide include dilauroyl peroxide (1 minute half-life temperature 116.4 ° C.), dibenzoyl peroxide (1 minute half-life temperature 130.0 ° C.), di (4-methylbenzoyl) peroxide (1 Minute half-life temperature 128.2 ° C), di (3-methylbenzoyl) peroxide (1 minute half-life temperature 131.1 ° C), t-hexylperoxybenzoate (1 minute half-life temperature 160.3 ° C), t Butyl peroxybenzoate (1 minute half-life temperature 166.8 ° C.), 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate (1 minute half-life temperature 124.3 ° C.), di- (3,5,5-trimethylhexanoyl) peroxide (1 minute half-life temperature 112.6 ° C), t-butyl peroxypivalate (1 minute half-life temperature 10.3 ℃), and the like. Among these, it is preferable to use dilauroyl peroxide and dibenzoyl peroxide in combination from the viewpoint of improving conduction reliability and improving adhesiveness. The first layer 31 does not necessarily contain a polymerization initiator, but may be added in a small amount so as not to impair the effects of the invention.

  As the conductive particles of the second layer 32, known conductive particles used in anisotropic conductive films (ACF) can be used. Examples thereof include particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, and gold. Moreover, the thing which coat | covered the metal on the surface of particles, such as a metal oxide, carbon, a graphite, glass, a ceramic, a plastics, and what further coat | covered the insulating thin film on the surface of these particles etc. are mentioned. In the case where the surface of the resin particle is coated with a metal such as Ni or Au, examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile / styrene (AS) resin, a benzoguanamine resin, and a divinylbenzene resin. Particles such as styrene resin can be used. The first layer 31 is not necessarily required to contain conductive particles, but may be added in a small amount so as not to impair the effects of the invention.

  Moreover, as another additive mix | blended with the 1st layer 31 and the 2nd layer 32, dilution of acrylic ester copolymer resin (acrylic rubber), a silane coupling agent, various acrylic monomers, etc. as needed Monomers, fillers, softeners, colorants, flame retardants, thixotropic agents, and the like may be added.

  According to the circuit connection material 30 having such a configuration, even when the periphery of the first terminal portion 12 is covered with the resist 13 having a thickness larger than the height of the terminal 12a, high connection reliability can be obtained. .

[Crimping process]
In the crimping step, the first circuit member and the second circuit member are thermocompression bonded at a predetermined temperature to obtain a connection structure. In the crimping step, for example, the second circuit member is pressed by using a crimping tool such as a heat tool. Here, the predetermined temperature refers to the temperature of the circuit connection material at the time of pressure bonding. Moreover, it is preferable that predetermined temperature is 100 degreeC or more and 180 degrees C or less.

  Moreover, it is preferable that the thickness of the 1st layer between the adjacent terminals after pressure bonding is 1 micrometer or more and less than 10 micrometers. Thereby, a terminal part area | region is filled with a binder moderately, generation | occurrence | production of the float in a reliability test can be suppressed, and high connection reliability can be acquired.

  Further, a buffer material may be interposed between the crimping tool and the second circuit member for crimping. By interposing the cushioning material, it is possible to reduce pressure variation and prevent the crimping tool from becoming dirty.

  There is no restriction | limiting in particular as a crimping | compression-bonding tool, According to the objective, it can select suitably, You may perform a press once using the pressing member which is a larger area than a press target, The pressing may be performed in several times using a pressing member having a small area.

  There is no restriction | limiting in particular as a front-end | tip shape of a crimping | compression-bonding tool, According to the objective, it can select suitably, For example, planar shape, curved surface shape, etc. are mentioned. In addition, when the tip shape is a curved surface shape, it is preferable to press along the curved surface shape.

  According to such a manufacturing method of the connection structure, the glass transition temperature of the film forming resin of the first layer of the circuit connecting material is not less than −50 ° C. of the predetermined temperature at the time of pressure bonding and the film forming resin of the second layer. Therefore, even when the periphery of the terminal portion is covered with a resist having a thickness larger than the terminal height, high connection reliability can be obtained.

<2. Example>
Examples of the present invention will be described below. In the present embodiment, the first layer in contact with the first circuit member and the second layer in contact with the second circuit member have a glass transition temperature Tg of the film forming resin of the first layer at a predetermined value. An anisotropic conductive film (ACF) was produced. Then, the first circuit member and the second circuit member are thermocompression bonded using ACF to produce a connection structure, and the connection structure has a conduction resistance, a peel strength, and a first between adjacent terminals after the compression bonding. The thickness of the layer was measured and evaluated. The present invention is not limited to these examples.

  Production of ACF, production of a connection structure, conduction resistance of the connection structure, peel strength, and thickness of the first layer between adjacent terminals after pressure bonding were measured and evaluated as follows.

<Production of ACF>
Table 1 shows the composition of each layer. The composition of each layer shown in Table 1 and a mixed solution of ethyl acetate and toluene so as to have a solid content of 50% by mass are each uniformly mixed by a conventional method, and compositions A1 to A6 are formed as the first layer. And Composition B was prepared as a second layer. The glass transition temperature of the film-forming resin was calculated as a theoretical glass transition temperature represented by the following formula (1) (FOX formula).
1 / Tg = W1 / T1 + W2 / T2 +... Wn / Tn (1)
In the formula (1), W1, W2,... Wn are mass fractions of each monomer, and T1, T2,... Tn are glass transition temperatures (K) of the respective monomers.

  Composition A1 consists of 54 parts by mass of phenoxy resin (trade name: jER4256, Mitsubishi Chemical Corporation), 25 parts by mass of urethane acrylate (trade name: U-2PPA, Shin-Nakamura Chemical Co., Ltd.), and bifunctional acrylate ( Product name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film-forming resin is 65 ° C.

  Composition A2 consists of 54 parts by mass of phenoxy resin (trade name: jER1256, Mitsubishi Chemical Corporation), 25 parts by mass of urethane acrylate (trade name: U-2PPA, Shin-Nakamura Chemical Co., Ltd.), and bifunctional acrylate ( Product name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film-forming resin is 98 ° C.

  Composition A3 consists of 54 parts by mass of phenoxy resin (trade name: YX8100, Mitsubishi Chemical Corporation), 25 parts by mass of urethane acrylate (trade name: U-2PPA, Shin-Nakamura Chemical Co., Ltd.), and bifunctional acrylate ( Product name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film forming resin is 150 ° C.

  Composition A4 consists of 27 parts by mass of phenoxy resin (trade name: jER4256, Mitsubishi Chemical Corporation), 27 parts by mass of phenoxy resin (trade name: jER1256, Mitsubishi Chemical Corporation), and urethane acrylate (trade name: U -2PPA, Shin-Nakamura Chemical Co., Ltd.) 25 parts by mass and bifunctional acrylate (trade name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film forming resin is 81 ° C.

  Composition A5 is composed of 27 parts by mass of phenoxy resin (trade name: jER4256, Mitsubishi Chemical Corporation), 27 parts by mass of phenoxy resin (trade name: YX8100, Mitsubishi Chemical Corporation), and urethane acrylate (trade name: U -2PPA, Shin-Nakamura Chemical Co., Ltd.) 25 parts by mass and bifunctional acrylate (trade name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film forming resin is 103 ° C.

  Composition A6 is composed of 27 parts by mass of phenoxy resin (trade name: jER1256, Mitsubishi Chemical Corporation), 27 parts by mass of phenoxy resin (trade name: YX8100, Mitsubishi Chemical Corporation), and urethane acrylate (trade name: U -2PPA, Shin-Nakamura Chemical Co., Ltd.) 25 parts by mass and bifunctional acrylate (trade name: A-200, Shin-Nakamura Chemical Co., Ltd.) 20 parts by mass. The glass transition temperature Tg of the film forming resin is 122 ° C.

  Composition B consists of 54 parts by mass of phenoxy resin (trade name: jER4256, Mitsubishi Chemical Corporation), 25 parts by mass of urethane acrylate (trade name: U-2PPA, Shin-Nakamura Chemical Co., Ltd.), and bifunctional acrylate ( Product name: A-200, Shin-Nakamura Chemical Co., Ltd. 20 parts by mass, phosphate ester acrylate (trade name: PM-2, Nippon Kayaku Co., Ltd.) 1 part by mass, Ni particles (nickel powder, An average particle diameter of 3 μm, 2 parts by weight of Bahrainco Co., Ltd., 3 parts by weight of dilauroyl peroxide, and 3 parts by weight of dibenzoyl peroxide are contained. The glass transition temperature Tg of the film-forming resin is 65 ° C.

  The composition A1 to A6, B shown in Table 1 was applied to the release polyester film layer by layer, and an adhesive film was prepared for each layer by spraying hot air at 70 ° C. for 5 minutes and drying. A layer composed of the composition B and a layer composed of the composition B were laminated to produce an ACF having a two-layer structure.

<Production of connection structure>
The first circuit member and the second circuit member were joined via the ACF described above to produce a connection structure. As a first circuit member, a printed wiring board (glass epoxy board, Cu thickness 35 μm, 200 μm P (pitch) (line: space = 1: 1) having a resist having a thickness larger than the height of the terminal around the terminal portion. ), Au flash plating product). The resist was formed as follows. A solder resist (PSR-4000) manufactured by Taiyo Ink Manufacturing Co., Ltd. was applied onto PWB so as to have a film thickness of 40 μm after drying by screen printing or spray coating, and was temporarily dried at 80 ° C. for 30 minutes. After drying, the exposed portion was photocured through a photomask, and the unexposed portion was removed with a 1% sodium carbonate aqueous solution. Then, the exposed portion was heated and dried under the conditions of 150 ° C. and 60 min to be cured, and an evaluation base material having a resist with an opening range of the terminal portion of 2.0 mm × 40 mm was produced. An evaluation base material of 300 μm P (pitch) (line: space = 1: 1) was also produced in the same manner. That is, the evaluation base material has a terminal height h of 35 μm and a resist thickness t of 40 μm in the first circuit member shown in FIG.

  In addition, a COF substrate (polyimide film thickness 38 μm, Cu thickness 8 μm, 200 μm P (pitch) (line: space = 1: 1), Sn-plated product) was used as the second circuit member. A COF substrate of 300 μm P (pitch) (line: space = 1: 1) was also used.

The connection between PWB and COF was performed under the following pressure bonding conditions.
-ACF width: 2.0 mm
・ Tool width: 2.0mm
-Buffer material: Silicone rubber thickness 200μm
Heating and pressing: 140-170 ° C / 2MPa / 3sec

  In addition, the thickness of the first layer of ACF between adjacent terminals after crimping was measured by cross-sectional observation.

<Measurement and evaluation of conduction resistance>
The connection structure of 200 μmP and 300 μmP was subjected to a voltage when a constant current of 1 mA was applied using a tester by a four-terminal method with a conduction resistance [initial conduction resistance (Ω) and environmental test (85 ° C., 85% RH, 1000 h), the conduction resistance (Ω)] was measured and evaluated according to the following criteria.
[Evaluation criteria for initial conduction resistance]
○: Conduction resistance is 0.070Ω or less Δ: Conduction resistance is 0.070Ω or more and less than 0.100Ω ×: Conduction resistance is 0.100Ω or more [Evaluation criteria of conduction resistance after environmental test]
○: (initial conduction resistance / conduction resistance after environmental test) is less than 5 times Δ: (conduction resistance after environmental test / initial conduction resistance) is 5 times or more and less than 11 times ×: (conduction resistance after environmental test) / Initial conduction resistance) is more than 11 times

<Measurement and evaluation of peel strength>
About the connection structure of 200 μm P, the 90 ° Y-axis direction peel strength was measured at a pulling speed of 50 mm / min, and evaluated according to the following criteria. The results are shown by the maximum peel strength (N / cm).
〔Evaluation criteria〕
○: Peel strength is 10 N / cm or more Δ: Peel strength is 8 N / cm or more and less than 10 N / cm x: Peel strength is less than 8 N / cm

<Example 1>
As shown in Table 2, ACFs were prepared in which the first layer was 20 μm thick composed of composition A3 and the second layer was 20 μm thick composed of composition B. The glass transition temperature Tg of the film-forming resin of the first layer was 150 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Example 1 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was ◯, and the evaluation of the peel strength of the connection structure was Δ.

<Example 2>
As shown in Table 2, an ACF was produced in which the first layer was 20 μm thick composed of the composition A5 and the second layer was 20 μm thick composed of the composition B. The glass transition temperature Tg of the film-forming resin of the first layer was 103 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 140 ° C. via the ACF of Example 2 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of resistance after the property test was ◯, and the evaluation of the peel strength of the connection structure was ◯.

<Example 3>
As shown in Table 2, an ACF was produced in which the first layer was 20 μm thick composed of the composition A6 and the second layer was 20 μm thick composed of the composition B. The glass transition temperature Tg of the film-forming resin of the first layer was 122 ° C.

  The first circuit member and the second circuit member were pressed at 150 ° C. via the ACF of Example 3 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of resistance after the property test was ◯, and the evaluation of the peel strength of the connection structure was ◯.

<Example 4>
As shown in Table 2, an ACF having a first layer of 10 μm thickness made of composition A5 and a second layer made of composition B having a thickness of 30 μm was prepared. The glass transition temperature Tg of the film-forming resin of the first layer was 103 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 150 ° C. via the ACF of Example 4 to produce a connection structure. The thickness of the first layer between adjacent terminals after the crimping was less than 3 μm.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of resistance after the property test was ◯, and the evaluation of the peel strength of the connection structure was ◯.

<Example 5>
As shown in Table 2, ACFs were prepared in which the first layer was 5 μm thick composed of composition A5 and the second layer was 35 μm thick composed of composition B. The glass transition temperature Tg of the film-forming resin of the first layer was 103 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 140 ° C. via the ACF of Example 4 to produce a connection structure. The thickness of the first layer between the adjacent terminals after the crimping was less than 1 μm.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of resistance after the property test was Δ, and the evaluation of the peel strength of the connection structure was ○.

<Example 6>
As shown in Table 2, an ACF having a first layer of 25 μm thickness made of the composition A5 and a second layer made of the composition B of 15 μm thickness was prepared. The glass transition temperature Tg of the film-forming resin of the first layer was 103 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 140 ° C. via the ACF of Example 4 to produce a connection structure. The thickness of the first layer between the adjacent terminals after crimping was less than 15 μm.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of resistance after the property test was Δ, and the evaluation of the peel strength of the connection structure was ○.

<Comparative Example 1>
As shown in Table 3, an ACF was produced in which the first layer was 20 μm thick composed of the composition A1, and the second layer was 20 μm thick composed of the composition B. The glass transition temperature Tg of the film-forming resin of the first layer was 65 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 1 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was ◯.

<Comparative Example 2>
As shown in Table 3, an ACF was produced in which the first layer was 20 μm thick composed of the composition A2, and the second layer was 20 μm thick composed of the composition B. The glass transition temperature Tg of the film forming resin of the first layer was 98 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 2 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was ◯.

<Comparative Example 3>
As shown in Table 3, an ACF was produced in which the first layer was 20 μm thick composed of the composition A4 and the second layer was 20 μm thick composed of the composition B. The glass transition temperature Tg of the first layer film-forming resin was 81 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 3 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is ○, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was ◯.

<Comparative Example 4>
As shown in Table 3, an ACF having a first layer having a thickness of 20 μm made of the composition B and a second layer having a thickness of 20 μm made of the composition A3 was produced. The glass transition temperature Tg of the film-forming resin of the first layer was 65 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 4 to produce a connection structure. The thickness of the first layer between adjacent terminals after the crimping was less than 3 μm.

  Evaluation of initial resistance of 200 μmP connection structure is Δ, evaluation of initial resistance of connection structure of 300 μmP is Δ, evaluation of resistance after reliability test of 200 μmP connection structure is ×, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was x.

<Comparative Example 5>
As shown in Table 3, an ACF having a thickness of 20 μm made of the composition B as the first layer and a thickness of 20 μm made of the composition A5 was prepared as the second layer. The glass transition temperature Tg of the film-forming resin of the first layer was 65 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 5 to produce a connection structure. The thickness of the first layer between adjacent terminals after the crimping was less than 3 μm.

  Evaluation of initial resistance of 200 μmP connection structure is Δ, evaluation of initial resistance of connection structure of 300 μmP is Δ, evaluation of resistance after reliability test of 200 μmP connection structure is ×, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was x.

<Comparative Example 6>
As shown in Table 3, an ACF having a first layer having a thickness of 20 μm made of the composition B and a second layer having a thickness of 20 μm made of the composition A6 was produced. The glass transition temperature Tg of the film-forming resin of the first layer was 65 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 6 to produce a connection structure. The thickness of the first layer between adjacent terminals after the crimping was less than 3 μm.

  Evaluation of initial resistance of 200 μmP connection structure is Δ, evaluation of initial resistance of connection structure of 300 μmP is Δ, evaluation of resistance after reliability test of 200 μmP connection structure is ×, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was x.

<Comparative Example 7>
As shown in Table 3, an ACF composed of the composition B and having a thickness of 40 μm was produced. The first circuit member and the second circuit member were pressure-bonded at 170 ° C. via the ACF of Comparative Example 7 to produce a connection structure.

  Evaluation of initial resistance of 200 μmP connection structure is ○, evaluation of initial resistance of connection structure of 300 μmP is ○, evaluation of resistance after reliability test of 200 μmP connection structure is Δ, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was ◯.

<Comparative Example 8>
As shown in Table 3, an ACF having a thickness of 20 μm made of the composition A3 as the first layer and a thickness of 20 μm made of the composition B as the second layer was prepared. The glass transition temperature Tg of the film-forming resin of the first layer was 150 ° C.

  The first circuit member and the second circuit member were pressure-bonded at 140 ° C. via the ACF of Comparative Example 8 to produce a connection structure. The thickness of the 1st layer between the adjacent terminals after crimping was less than 10 micrometers.

  Evaluation of initial resistance of 200 μmP connection structure is ◯, evaluation of initial resistance of connection structure of 300 μmP is Δ, evaluation of resistance after reliability test of 200 μmP connection structure is Δ, reliability of connection structure of 300 μmP The evaluation of the resistance after the property test was x, and the evaluation of the peel strength of the connection structure was ◯.

  As shown in Table 3, in the ACFs of Comparative Examples 1 to 3, the glass transition temperature of the film-forming resin of the first layer is not higher than the pressure bonding temperature of −50 ° C., so that the circuit member having a relatively wide terminal width of 300 μm When trying to connect, the removal of the binder between the terminals was insufficient, and high connection reliability could not be obtained.

  In addition, the ACFs of Comparative Examples 4 to 6 are compositions in which the composition of the first layer and the composition of the second layer of Examples 1 to 3 are changed to the second layer and the first layer, respectively. The capture rate of conductive particles was poor, and the initial conduction resistance was high. The peel strength was also low.

  Further, since the ACF of Comparative Example 7 has a single-layer structure composed of the composition B, the binder between terminals was not sufficiently removed, and high connection reliability could not be obtained. Further, in Comparative Example 8, since the pressure bonding temperature is low and the glass transition temperature of the film forming resin of the first layer is not higher than −50 ° C. of the pressure bonding temperature, the removal of the binder between the terminals is insufficient, and the high connection reliability. Could not get.

  on the other hand. In the ACFs of Examples 1 to 6, the glass transition temperature of the film-forming resin of the first layer is not less than −50 ° C. of the pressure-bonding temperature and + 35 ° C. or more of the glass transition temperature of the film-forming resin of the second layer. The binder between the terminals could be removed moderately and high connection reliability could be obtained.

  Further, from Example 5 and Example 6, when the thickness of the first layer is about 10 to 75% of the height of the first terminal, the periphery of the terminal portion is a resist having a thickness larger than the terminal height. It was found that high connection reliability can be obtained even when covered.

  Moreover, from Examples 1-6, when the thickness of the 1st layer between the adjacent terminals after crimping | compression-bond is 1 micrometer or more and less than 10 micrometers, a terminal part area | region is filled with a binder moderately and the generation | occurrence | production of the float in a reliability test occurs It was found that high connection reliability can be obtained.

DESCRIPTION OF SYMBOLS 10 1st circuit member, 11 1st base material, 12 1st terminal part, 12a 1st terminal, 13 resist, 20 2nd circuit member, 21 2nd base material, 22 2nd terminal part 22a second terminal, 30 circuit connecting material, 31 first layer, 32 second layer

Claims (7)

A first circuit member comprising: a first terminal portion in which first terminals are arranged; and a resist formed around the first terminal portion and having a thickness larger than the height of the first terminal; A second circuit member including a second terminal portion in which second terminals having a height lower than that of the first terminal are arranged, containing a film-forming resin and a polymerizable compound, A first layer in contact with one circuit member, a film-forming resin, a polymerizable compound, a polymerization initiator, and conductive particles, and a second layer in contact with the second circuit member. A placement step of placing the circuit connection material in between;
A thermocompression bonding of the first circuit member and the second circuit member at a predetermined temperature to obtain a connection structure,
A method for producing a connection structure, wherein the glass transition temperature of the film forming resin of the first layer is -50 ° C or higher of the predetermined temperature and + 35 ° C or higher of the glass transition temperature of the film forming resin of the second layer.   The method for manufacturing a connection structure according to claim 1, wherein the thickness of the first layer is about 10 to 75% of the height of the first terminal. The polymerizable compound of the first layer and the second layer is a radical polymerizable compound,
The method for producing a connection structure according to claim 1 or 2, wherein the polymerization initiator of the second layer is an organic peroxide.   4. The method for manufacturing a connection structure according to claim 1, wherein a width of the first terminal is 300 μm or more. 5.   The method for manufacturing a connection structure according to any one of claims 1 to 3, wherein the thickness of the first layer between adjacent terminals after crimping is 1 µm or more and less than 10 µm.   The connection structure obtained by the manufacturing method of the connection structure of any one of Claims 1 thru | or 5. A first circuit member comprising: a first terminal portion in which first terminals are arranged; and a resist formed around the first terminal portion and having a thickness larger than the height of the first terminal; In the circuit connection material for thermocompression bonding at a predetermined temperature with the second circuit member provided with the second terminal portion in which the second terminals lower in height than the terminals of the first circuit member are arranged,
A first layer containing a film-forming resin and a polymerizable compound and in contact with the first circuit member;
A film-forming resin, a polymerizable compound, a polymerization initiator, a conductive particle, and a second layer in contact with the second circuit member;
The circuit connecting material, wherein the glass transition temperature of the film forming resin of the first layer is −50 ° C. or more of the predetermined temperature and + 35 ° C. or more of the glass transition temperature of the film forming resin of the second layer.