JP2015159212A5 - - Google Patents
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- Publication number
- JP2015159212A5 JP2015159212A5 JP2014033686A JP2014033686A JP2015159212A5 JP 2015159212 A5 JP2015159212 A5 JP 2015159212A5 JP 2014033686 A JP2014033686 A JP 2014033686A JP 2014033686 A JP2014033686 A JP 2014033686A JP 2015159212 A5 JP2015159212 A5 JP 2015159212A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- reaction chamber
- adsorbate
- chlorine
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 24
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 12
- 239000000460 chlorine Substances 0.000 claims 12
- 229910052801 chlorine Inorganic materials 0.000 claims 12
- 239000002156 adsorbate Substances 0.000 claims 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 8
- 229910052799 carbon Inorganic materials 0.000 claims 8
- 125000000217 alkyl group Chemical group 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 238000001179 sorption measurement Methods 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 150000002829 nitrogen Chemical class 0.000 claims 1
- 150000002926 oxygen Chemical class 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims 1
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 claims 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims 1
- 239000005052 trichlorosilane Substances 0.000 claims 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 claims 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims 1
- ZMPKTELQGVLZTD-UHFFFAOYSA-N tripropylborane Chemical compound CCCB(CCC)CCC ZMPKTELQGVLZTD-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014033686A JP2015159212A (ja) | 2014-02-25 | 2014-02-25 | カーボンを含むシリコン膜の形成方法、及び、形成装置 |
| TW104105218A TWI602944B (zh) | 2014-02-25 | 2015-02-16 | 含碳之矽膜之形成方法 |
| KR1020150025765A KR20150100557A (ko) | 2014-02-25 | 2015-02-24 | 카본을 포함하는 실리콘막의 형성 방법, 및 형성 장치 |
| US14/629,666 US9490122B2 (en) | 2014-02-25 | 2015-02-24 | Method and apparatus of forming carbon-containing silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014033686A JP2015159212A (ja) | 2014-02-25 | 2014-02-25 | カーボンを含むシリコン膜の形成方法、及び、形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015159212A JP2015159212A (ja) | 2015-09-03 |
| JP2015159212A5 true JP2015159212A5 (enExample) | 2016-10-20 |
Family
ID=53882893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014033686A Pending JP2015159212A (ja) | 2014-02-25 | 2014-02-25 | カーボンを含むシリコン膜の形成方法、及び、形成装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9490122B2 (enExample) |
| JP (1) | JP2015159212A (enExample) |
| KR (1) | KR20150100557A (enExample) |
| TW (1) | TWI602944B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6717632B2 (ja) * | 2016-03-29 | 2020-07-01 | 一般財団法人ファインセラミックスセンター | 蒸着処理装置 |
| JP6318188B2 (ja) * | 2016-03-30 | 2018-04-25 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6999616B2 (ja) * | 2019-08-07 | 2022-01-18 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| JP7741205B2 (ja) * | 2021-06-11 | 2025-09-17 | ジュスン エンジニアリング カンパニー リミテッド | パワー半導体素子の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2692091B2 (ja) * | 1987-10-31 | 1997-12-17 | 株式会社日本自動車部品総合研究所 | 炭化ケイ素半導体膜およびその製造方法 |
| JPH086180B2 (ja) | 1991-07-30 | 1996-01-24 | 科学技術庁金属材料技術研究所長 | 結晶性ＳｉＣ膜の製造法 |
| US6117233A (en) | 1995-02-07 | 2000-09-12 | Max-Planck-Gesellschaft Zur Forderung De | Formation of single-crystal thin SiC films |
| TW527429B (en) * | 1999-10-15 | 2003-04-11 | Asm Inc | Deposition of transition metal carbides |
| JP2008123213A (ja) | 2006-11-10 | 2008-05-29 | Canon Inc | 画像出力装置及び文書処理方法 |
| US7888248B2 (en) | 2007-07-13 | 2011-02-15 | Northrop Grumman Systems Corporation | Method of producing large area SiC substrates |
| US8012859B1 (en) | 2010-03-31 | 2011-09-06 | Tokyo Electron Limited | Atomic layer deposition of silicon and silicon-containing films |
| US20120000490A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for enhanced processing chamber cleaning |
| US9040127B2 (en) * | 2010-09-24 | 2015-05-26 | Applied Materials, Inc. | Low temperature silicon carbide deposition process |
| JP6030378B2 (ja) * | 2012-08-14 | 2016-11-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
-
2014
- 2014-02-25 JP JP2014033686A patent/JP2015159212A/ja active Pending
-
2015
- 2015-02-16 TW TW104105218A patent/TWI602944B/zh not_active IP Right Cessation
- 2015-02-24 US US14/629,666 patent/US9490122B2/en not_active Expired - Fee Related
- 2015-02-24 KR KR1020150025765A patent/KR20150100557A/ko not_active Ceased
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