JP2015151575A - ハードマスク形成方法及びハードマスク形成装置 - Google Patents
ハードマスク形成方法及びハードマスク形成装置 Download PDFInfo
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- JP2015151575A JP2015151575A JP2014025899A JP2014025899A JP2015151575A JP 2015151575 A JP2015151575 A JP 2015151575A JP 2014025899 A JP2014025899 A JP 2014025899A JP 2014025899 A JP2014025899 A JP 2014025899A JP 2015151575 A JP2015151575 A JP 2015151575A
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- titanium nitride
- nitride film
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 147
- 238000012545 processing Methods 0.000 claims abstract description 75
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000001301 oxygen Substances 0.000 claims abstract description 49
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 49
- 238000001179 sorption measurement Methods 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- 238000005121 nitriding Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 12
- 239000002356 single layer Substances 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 28
- 239000000758 substrate Substances 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 238000012546 transfer Methods 0.000 description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 13
- 229910001882 dioxygen Inorganic materials 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
【課題】エッチング耐性を発揮する膜密度を持ちながら、その膜ストレスの小さい単一層の窒化チタン膜を形成できるハードマスク形成方法を提供する。
【解決手段】本発明のハードマスク形成方法は、処理対象物Wの表面に窒化チタン膜Fを成膜する成膜工程と、窒化チタン膜の表面に酸素含有分子を吸着させる吸着工程と、前記窒化チタン膜を所定温度に加熱する加熱工程とを含む。
【選択図】図1
Description
Claims (5)
- 処理対象物の表面に窒化チタン膜を成膜する成膜工程と、
前記窒化チタン膜の表面に酸素含有分子を吸着させる吸着工程と、
前記窒化チタン膜を所定温度に加熱する加熱工程とを含むことを特徴とする窒化チタン膜形成方法。 - 前記成膜工程と前記加熱工程とは、処理室内にチタン製のターゲットと処理対象物とを配置した後、真空引きされた処理室内に希ガスと窒素ガスとを導入し、ターゲットに電力投入して処理対処物表面に反応性スパッタリングにより窒化チタン膜を成膜するものであり、吸着工程は、処理対処物表面への窒化チタン膜の成膜後に、処理室内に酸素含有ガスを導入して窒化チタン膜の表面に酸素含有分子を吸着させるものであることを特徴とする請求項1記載のハードマスク形成方法。
- 前記吸着工程は、酸素含有ガスのプラズマ雰囲気を形成し、プラズマ雰囲気に前記窒化チタン膜を曝すことで前記加熱工程をも行うことを特徴とする請求項1記載のハードマスク形成方法。
- 前記加熱工程での加熱温度が100℃〜550℃の範囲内で設定されることを特徴とする請求項1〜3の何れか1項記載のハードマスク形成方法。
- 請求項1〜4のいずれか1項に記載の窒化チタン膜形成方法を実施する窒化チタン膜形成装置において、
前記成膜工程、前記吸着工程及び前記加熱工程を行う真空処理室と、
前記真空処理室内に酸素含有ガスを導入する酸素含有ガス導入手段と、
前記真空処理室内に配置される処理対象物を加熱する加熱手段とを更に備えることを特徴とする窒化チタン膜形成装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014025899A JP6030589B2 (ja) | 2014-02-13 | 2014-02-13 | ハードマスク形成方法及びハードマスク形成装置 |
TW103121235A TWI633579B (zh) | 2014-02-13 | 2014-06-19 | Hard mask forming method and hard mask forming device |
KR1020140113183A KR20150095542A (ko) | 2014-02-13 | 2014-08-28 | 하드 마스크 형성 방법 및 하드 마스크 형성 장치 |
US14/560,659 US9779958B2 (en) | 2014-02-13 | 2014-12-04 | Method of, and apparatus for, forming hard mask |
KR1020210063880A KR102293539B1 (ko) | 2014-02-13 | 2021-05-18 | 하드 마스크 형성 방법 및 하드 마스크 형성 장치 |
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JP2014025899A JP6030589B2 (ja) | 2014-02-13 | 2014-02-13 | ハードマスク形成方法及びハードマスク形成装置 |
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JP2015151575A true JP2015151575A (ja) | 2015-08-24 |
JP6030589B2 JP6030589B2 (ja) | 2016-11-24 |
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US (1) | US9779958B2 (ja) |
JP (1) | JP6030589B2 (ja) |
KR (2) | KR20150095542A (ja) |
TW (1) | TWI633579B (ja) |
Cited By (4)
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WO2017049267A1 (en) * | 2015-09-19 | 2017-03-23 | Applied Materials, Inc. | Titanium-compound based hard mask films |
US9785049B2 (en) | 2016-01-12 | 2017-10-10 | Shin-Etsu Chemical Co., Ltd. | Method for forming multi-layer film and patterning process |
KR20180086238A (ko) | 2016-05-16 | 2018-07-30 | 가부시키가이샤 아루박 | 내부 응력 제어막의 형성 방법 |
JP2021005784A (ja) * | 2019-06-26 | 2021-01-14 | セイコーエプソン株式会社 | 振動片、電子機器、および移動体 |
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TWI737612B (zh) | 2015-06-18 | 2021-09-01 | 美商應用材料股份有限公司 | 用於均勻且共形之混成氧化鈦薄膜的沉積方法 |
US10468264B2 (en) * | 2016-07-04 | 2019-11-05 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
US10760158B2 (en) * | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US11081364B2 (en) * | 2019-02-06 | 2021-08-03 | Micron Technology, Inc. | Reduction of crystal growth resulting from annealing a conductive material |
CN113862622B (zh) * | 2021-09-24 | 2023-10-13 | 北京北方华创微电子装备有限公司 | 一种金属化合物薄膜的制备方法 |
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- 2014-02-13 JP JP2014025899A patent/JP6030589B2/ja active Active
- 2014-06-19 TW TW103121235A patent/TWI633579B/zh active
- 2014-08-28 KR KR1020140113183A patent/KR20150095542A/ko active Application Filing
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JP7293909B2 (ja) | 2019-06-26 | 2023-06-20 | セイコーエプソン株式会社 | 振動片、電子機器、および移動体 |
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KR20210060404A (ko) | 2021-05-26 |
JP6030589B2 (ja) | 2016-11-24 |
TWI633579B (zh) | 2018-08-21 |
TW201532122A (zh) | 2015-08-16 |
US20150228496A1 (en) | 2015-08-13 |
KR102293539B1 (ko) | 2021-08-25 |
KR20150095542A (ko) | 2015-08-21 |
US9779958B2 (en) | 2017-10-03 |
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