JP2015133363A - Lead frame for optical semiconductor, resin compact for optical semiconductor and method of manufacturing the same, optical semiconductor package, and optical semiconductor device - Google Patents

Lead frame for optical semiconductor, resin compact for optical semiconductor and method of manufacturing the same, optical semiconductor package, and optical semiconductor device Download PDF

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JP2015133363A
JP2015133363A JP2014002738A JP2014002738A JP2015133363A JP 2015133363 A JP2015133363 A JP 2015133363A JP 2014002738 A JP2014002738 A JP 2014002738A JP 2014002738 A JP2014002738 A JP 2014002738A JP 2015133363 A JP2015133363 A JP 2015133363A
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optical semiconductor
resin
lead frame
frame
unit mounting
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JP6539942B2 (en
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充啓 堀
Mitsuhiro Hori
充啓 堀
裕之 坂根
Hiroyuki Sakane
裕之 坂根
友和 戸澤
Tomokazu Tozawa
友和 戸澤
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Kaneka Corp
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Kaneka Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor, a resin compact for an optical semiconductor and a method of manufacturing the same, an optical semiconductor package, and an optical semiconductor device, capable of preventing generation of defects, such as cracks, breakage, peeling-off, on a resin layer around a unit mounting region when a resin compact for an optical semiconductor is removed from a molding die.SOLUTION: In a lead frame 1 for an optical semiconductor, a plurality of unit mounting regions 10 each consisting of two or more lead parts 20 and 21 separated from each other are provided consecutively lengthwise and crosswise. A frame body 12 is provided around an aggregate 11 of the plurality of unit mounting regions 10, with a clearance 25. A unit mounting region 10x arranged at a peripheral end of the aggregate 11, and the frame body 12 are coupled with each other, and a supporting part 13 supporting the aggregate 11 is provided inside the frame body 12. The frame body 12 is provided with a notch groove 14 for resin injection that opens toward an inside end surface 26 facing on the clearance 25.

Description

本発明は、光半導体用リードフレーム、光半導体用樹脂成形体及びその製造方法、光半導体パッケージ並びに光半導体装置に関する。   The present invention relates to an optical semiconductor lead frame, an optical semiconductor resin molding and a method for manufacturing the same, an optical semiconductor package, and an optical semiconductor device.

発光ダイオード（ＬＥＤ）、レーザダイオード（ＬＤ）等の光半導体素子を実装した光半導体装置は、視認性に優れた高輝度の光を発することが可能であると共に、小型化が可能で、消費電力が低く、長寿命である、といった数々の利点を有している。このため、光半導体装置は、例えば、電球、ダウンライト、ベースライト、街灯、信号機等の照明器具、液晶ディスプレイ等のバックライト光源等として使用され、その用途は急速に拡大しつつある。   An optical semiconductor device in which an optical semiconductor element such as a light emitting diode (LED) or a laser diode (LD) is mounted can emit high-luminance light with excellent visibility, and can be miniaturized and consumes power. Has many advantages such as low life and long life. For this reason, the optical semiconductor device is used as, for example, a lighting device such as a light bulb, a downlight, a base light, a streetlight, a traffic light, a backlight light source such as a liquid crystal display, and the use thereof is rapidly expanding.

光半導体装置は、例えば、ほぼ直線状に延びる空間状のスリット部を介して対向する第１、第２のリード部よりなる単位実装領域と、単位実装領域の少なくとも発光素子実装表面及びスリット部に形成され、単位実装領域の発光素子実装表面が底面に露出する凹部を形成する穴を有する硬化性樹脂層と、凹部底面における単位実装領域の発光素子実装面に実装される発光素子と、発光素子実装後の凹部に充填される透明性樹脂からなる透明性樹脂層と、を備えている（特許文献１及び２）。また、単位実装領域の発光素子実装面に形成されるいわゆるリフレクタと呼ばれる硬化性樹脂層を有さず、硬化性樹脂層が主にスリット部に形成された平板型（フラット型）の光半導体装置も知られている（特許文献３）。   The optical semiconductor device includes, for example, a unit mounting region composed of first and second lead portions facing each other via a spatial slit portion extending substantially linearly, and at least a light emitting element mounting surface and a slit portion of the unit mounting region. A curable resin layer having a hole that forms a recess in which the light emitting element mounting surface of the unit mounting area is exposed on the bottom surface, a light emitting element mounted on the light emitting element mounting surface of the unit mounting area on the bottom surface of the recess, and the light emitting element And a transparent resin layer made of a transparent resin filled in the recess after mounting (Patent Documents 1 and 2). Also, a flat type optical semiconductor device that does not have a curable resin layer called a so-called reflector formed on the light emitting element mounting surface in the unit mounting region, and in which the curable resin layer is mainly formed in the slit portion. Is also known (Patent Document 3).

光半導体装置は、一般には、複数の単位実装領域を複数の接続片により縦横に格子状に連結した単位実装領域の集合体と、該集合体を支持する枠体とを備えるリードフレームを用い、トランスファモールド成形により製造されている。より具体的には、リードフレームを成形金型内に設置し、該金型におけるリードフレームの枠体の周縁部近傍に設けられたゲート部から該金型内に硬化性樹脂を注入して熱硬化させ、リードフレームの所定箇所に硬化性樹脂層を一体形成した光半導体装置用樹脂成形体を作製し、この樹脂成形体における各単位実装領域の所定の位置に発光素子を実装し、各発光素子を透明性樹脂層で被覆して光半導体パッケージを作製し、このパッケージを切断刃で切断して個片化することにより、光半導体装置が製造されている。   In general, an optical semiconductor device uses a lead frame that includes an assembly of unit mounting regions in which a plurality of unit mounting regions are connected in a grid pattern vertically and horizontally by a plurality of connection pieces, and a frame that supports the assembly. Manufactured by transfer molding. More specifically, a lead frame is placed in a molding die, and a curable resin is injected into the die from a gate provided near the periphery of the lead frame frame in the die. A resin molded body for an optical semiconductor device in which a curable resin layer is integrally formed at a predetermined portion of a lead frame is manufactured, and a light emitting element is mounted at a predetermined position of each unit mounting region of the resin molded body. An optical semiconductor device is manufactured by coating an element with a transparent resin layer to produce an optical semiconductor package, and cutting the package with a cutting blade into individual pieces.

従来の光半導体装置の製造方法では、光半導体用樹脂成形体を成形金型から脱型する際に、単位実装領域に形成された硬化性樹脂層に亀裂、欠け、リードフレームからの部分的な剥離等の欠陥が発生し易いという問題がある。   In the conventional method of manufacturing an optical semiconductor device, when the resin molded body for an optical semiconductor is removed from the molding die, the curable resin layer formed in the unit mounting region is cracked, chipped, partially from the lead frame. There is a problem that defects such as peeling are likely to occur.

特開平１１−３０７８２０号公報JP-A-11-307820 特開２０１０−６２２７２号公報JP 2010-62272 A 特開２０１１−１７６２５６号公報JP 2011-176256 A

本発明者らは、従来技術の課題を解決するために鋭意研究を重ねた結果、リードフレームの構造的な面から、上記欠陥の発生の防止策を見出した。従来から用いられている成形金型では、リードフレームの枠体周縁部の近傍に硬化性樹脂を注入するためのゲート部が設けられている。ゲート部から硬化性樹脂を注入して硬化性樹脂層を形成し、成形金型から脱型した場合、単位実装領域と枠体との境界領域を中心として硬化性樹脂層が破断し、その衝撃でその周辺の硬化性樹脂層に上記のような欠陥が生じ易くなり、光半導体装置の不良品率が増加することが、本発明者らの研究により判明した。   As a result of intensive studies in order to solve the problems of the prior art, the present inventors have found a measure for preventing the occurrence of the defect from the structural aspect of the lead frame. In a conventionally used molding die, a gate portion for injecting a curable resin is provided in the vicinity of the frame peripheral portion of the lead frame. When a curable resin layer is formed by injecting a curable resin from the gate part and removed from the molding die, the curable resin layer breaks around the boundary area between the unit mounting area and the frame, and the impact Thus, it has been found by the present inventors that the above-described defects are likely to occur in the peripheral curable resin layer and the defective product rate of the optical semiconductor device increases.

本発明者らは、上記知見に基づいて更に研究を重ねた結果、リードフレームにおける枠体の、単位実装領域の集合体と枠体との間に隙間を設け、枠体の該隙間を臨む内側端面に開口する樹脂注入用の切欠き溝を設けることにより、樹脂成形体を成形金型から脱型する際における硬化性樹脂層の破断が従来技術における破断領域よりもリードフレームの外側方向にずれて起こり、単位実装領域周辺の硬化性樹脂層には破断による影響を及ぼさなくなり、上記した種々の欠陥の発生を防止できることを見出した。   As a result of further research based on the above findings, the present inventors have provided a gap between the assembly of the unit mounting area and the frame body of the frame body in the lead frame, and the inner side facing the gap of the frame body By providing a notch groove for resin injection that opens at the end face, the rupture of the curable resin layer when the resin molded body is removed from the mold is shifted more outwardly than the rupture area in the prior art. It has been found that the curable resin layer around the unit mounting area is not affected by breakage and the occurrence of the various defects described above can be prevented.

本発明の目的は、成形金型から光半導体用樹脂成形体を脱型する際に、該樹脂成形体における単位実装領域周辺に形成された樹脂層に亀裂、欠け、リードフレームからの部分的な剥離等の欠陥が発生することを防止できる光半導体用リードフレーム、光半導体用樹脂成形体及びその製造方法、光半導体パッケージ並びに光半導体装置を提供することである。   The object of the present invention is to remove a resin layer formed around a unit mounting area of the resin molded body from a crack, a chip, or a partial from a lead frame when the resin molded body for optical semiconductor is removed from the molding die. To provide a lead frame for optical semiconductor, a resin molded body for optical semiconductor, a manufacturing method thereof, an optical semiconductor package, and an optical semiconductor device capable of preventing occurrence of defects such as peeling.

本発明は、前述の課題解決のために、下記（１）〜（７）の光半導体用リードフレーム、下記（８）〜（９）の光半導体用樹脂成形体、下記（１０）〜（１１）の光半導体用樹脂成形体の製造方法、下記（１２）の光半導体パッケージ、及び下記（１３）の光半導体装置を構成した。   In order to solve the above-mentioned problems, the present invention provides the following lead frames for optical semiconductors (1) to (7), resin moldings for optical semiconductors (8) to (9), and (10) to (11) below. The manufacturing method of the resin molding for optical semiconductors of (1), the optical semiconductor package of the following (12), and the optical semiconductor device of the following (13) were comprised.

（１）２以上の互いに離隔するリード部からなる単位実装領域が、縦横に複数連設されてなる光半導体用リードフレームであって、複数の単位実装領域の集合体の周りに、隙間を空けて枠体を設け、前記集合体のうち周端に配された単位実装領域と枠体とを連結し、枠体の内側に前記集合体を支持する支持部を設け、枠体に、前記隙間を臨む内側端面に開口する樹脂注入用の切欠き溝を設けてなることを特徴とする光半導体用リードフレーム。   (1) An optical semiconductor lead frame in which a plurality of unit mounting areas composed of two or more lead portions spaced apart from each other are connected in series in a vertical and horizontal direction, and a gap is provided around an assembly of the plurality of unit mounting areas. Providing a frame, connecting a unit mounting region disposed at a peripheral edge of the aggregate and the frame, providing a support portion for supporting the aggregate inside the frame, and providing the gap to the gap. A lead frame for an optical semiconductor, characterized in that a notch groove for injecting resin is provided on the inner end face facing the surface.

（２）フレーム内部の前記単位実装領域のリード部周りの樹脂充填空間を、縦横に隣接する他の単位実装領域の同じく樹脂充填空間に連通させてなる上記（１）の光半導体用リードフレーム。
（３）縦横の単位実装領域を薄肉の連結部で連結してなる上記（２）の光半導体用リードフレーム。
（４）支持部を、薄肉部より構成してなる上記（１）〜（３）の何れかの光半導体用リードフレーム。
（５）支持部を、薄肉の支持片より構成してなる上記（４）の光半導体用リードフレーム。 (2) The lead frame for an optical semiconductor according to (1), wherein the resin filling space around the lead portion in the unit mounting area inside the frame is communicated with the resin filling space in other unit mounting areas adjacent vertically and horizontally.
(3) The lead frame for an optical semiconductor according to (2), wherein the vertical and horizontal unit mounting regions are connected by a thin connecting portion.
(4) The lead frame for optical semiconductors according to any one of the above (1) to (3), wherein the support part is constituted by a thin part.
(5) The lead frame for optical semiconductors according to (4) above, wherein the support portion is composed of a thin support piece.

（６）切欠き溝を、枠体の前記集合体を囲む枠辺うち、互いに離隔するリード部間の樹脂充填空間が延びる方向に対して交わる方向に延びている枠辺に設けてなる上記（１）〜（５）の何れかの光半導体用リードフレーム。
（７）切欠き溝を、隣接する単位実装領域間の位置に対向する位置に開口させてなる上記（１）〜（６）の何れかの光半導体用リードフレーム。 (6) The notch groove is provided in a frame side extending in a direction intersecting with a direction in which a resin filling space between lead parts spaced apart from each other extends among the frame sides surrounding the aggregate of the frame body ( The lead frame for optical semiconductors in any one of 1)-(5).
(7) The lead frame for an optical semiconductor according to any one of (1) to (6), wherein the notch groove is opened at a position opposite to a position between adjacent unit mounting regions.

（８）上記（１）〜（７）の何れかの光半導体用リードフレームと、該リードフレームに一体成形される樹脂層とよりなり、表裏に各リード部の上下面がそれぞれ露出した光半導体用樹脂成形体。
（９）樹脂層を、リードフレームの板厚内の空間に充填される樹脂により該リードフレームに一体成形してなり、表裏に各リード部の上下面がそれぞれ露出し、且つリードフレームの板厚と同じ厚みを有する平板型である上記（８）の光半導体用樹脂成形体。 (8) An optical semiconductor comprising the optical semiconductor lead frame according to any one of (1) to (7) above and a resin layer integrally formed with the lead frame, wherein the upper and lower surfaces of each lead portion are exposed on the front and back surfaces, respectively. Resin moldings.
(9) The resin layer is integrally formed on the lead frame with a resin filled in the space within the thickness of the lead frame, the upper and lower surfaces of each lead portion are exposed on the front and back surfaces, and the thickness of the lead frame (8) The resin molding for optical semiconductors of the said (8) which is a flat plate type which has the same thickness.

（１０）上記（８）又は（９）の光半導体用樹脂成型体の製造方法であって、光半導体用リードフレームを上下から挟み込む上下金型のうち、一方の金型における前記リードフレームの枠体に設けられた切欠き溝の当該金型側の開口部に対応する位置に、該開口部を通じて切欠き溝内部に連通するゲート部を設けるとともに、該ゲート部に樹脂を供給するランナーを設け、これら上下金型を用いて樹脂層をリードフレームに一体成形することを特徴とする光半導体用樹脂成形体の製造方法。
（１１）上下金型を用いたトランスファモールド成型より熱硬化性樹脂を充填して樹脂層をリードフレームに一体成形する上記（１０）の光半導体用樹脂成形体の製造方法。 (10) The method for producing a resin molded body for optical semiconductors according to (8) or (9) above, wherein the frame of the lead frame in one mold among the upper and lower molds sandwiching the optical semiconductor lead frame from above and below. A gate portion communicating with the inside of the notch groove through the opening is provided at a position corresponding to the opening on the mold side of the notch groove provided in the body, and a runner for supplying resin to the gate portion is provided. A method for producing a resin molded body for an optical semiconductor, wherein a resin layer is integrally formed on a lead frame using these upper and lower molds.
(11) The method for producing a resin molded product for an optical semiconductor according to (10), wherein a thermosetting resin is filled by transfer mold molding using upper and lower molds, and the resin layer is integrally formed on the lead frame.

（１２）上記（８）又は（９）の光半導体用樹脂成形体と、単位実装領域の各々に対応して設けられ、それぞれ光半導体用樹脂成形体の表面に露出している各リード部に通電可能に実装される光半導体素子と、各光半導体素子を透光性樹脂で封止してなる透光性樹脂層と、よりなる光半導体パッケージ。
（１３）上記（１２）の光半導体パッケージを、光半導体素子ごとに個片化してなる光半導体装置。 (12) The resin molded body for optical semiconductors according to (8) or (9) and the lead portions provided corresponding to each of the unit mounting regions and exposed on the surface of the resin molded body for optical semiconductors, respectively. An optical semiconductor package comprising: an optical semiconductor element mounted so as to be energized; a translucent resin layer formed by sealing each optical semiconductor element with a translucent resin;
(13) An optical semiconductor device obtained by dividing the optical semiconductor package of (12) into individual optical semiconductor elements.

本発明の光半導体用リードフレームは、２以上の互いに離隔するリード部からなる単位実装領域が縦横に複数連設された単位実装領域の集合体と、該集合体の周りに隙間を空けて設けられた枠体と、該集合体のうち周端に配された単位実装領域と枠体とを連結するように設けられ、枠体の内側に集合体を支持する支持部と、枠体の前記隙間を臨む内側端面に開口するように設けられる樹脂注入用の切欠き溝と、より構成されている。   An optical semiconductor lead frame of the present invention is provided with an assembly of unit mounting regions in which a plurality of unit mounting regions each composed of two or more spaced apart lead portions are arranged in a row and vertically, with a gap around the assembly. A frame body, a unit mounting region disposed at a peripheral edge of the aggregate, and a frame are connected to each other, and a support portion that supports the aggregate inside the frame, A notch groove for injecting resin is provided so as to open to the inner end face facing the gap.

この構成により、トランスファモールド成形等により光半導体用リードフレームに樹脂層を一体成形して得られる樹脂成形体を成形金型から脱型する際に、樹脂層の破断位置が、該樹脂成形体における単位実装領域周辺からリードフレームの枠辺に形成された切欠き溝周辺に遠ざかり、各単位実装領域周辺の樹脂層に破断の影響が及ばなくなるので、該樹脂層に亀裂、欠け、単位実装領域からの剥離等の欠陥が発生するのを防止でき、製品の不良品率を顕著に低下させることができる。また、複数の単位実装領域集合体と枠体との間の隙間を通じて該集合体へ樹脂を効率良く注入でき、且つ樹脂を該集合体の全域に満遍なく均一に行き渡らせることができる。   With this configuration, when the resin molded body obtained by integrally molding the resin layer on the optical semiconductor lead frame by transfer molding or the like is removed from the molding die, the break position of the resin layer in the resin molded body Since the resin layer around each unit mounting area is not affected by breakage from the periphery of the unit mounting area away from the periphery of the notch groove formed on the frame side of the lead frame, the resin layer is not cracked, chipped, or removed from the unit mounting area. It is possible to prevent the occurrence of defects such as peeling, and to significantly reduce the defective product rate. In addition, the resin can be efficiently injected into the aggregate through the gaps between the plurality of unit mounting region aggregates and the frame, and the resin can be evenly and uniformly distributed throughout the aggregate.

また、リードフレーム内部の単位実装領域のリード部周りの樹脂充填空間を、縦横に隣接する他の単位実装領域の同じく樹脂充填空間に連通させることにより、樹脂を縦横の単位実装領域に効率よく均一に供給できる。   In addition, by connecting the resin filling space around the lead part in the unit mounting area inside the lead frame to the same resin filling space in other unit mounting areas adjacent in the vertical and horizontal directions, the resin is efficiently and evenly distributed in the vertical and horizontal unit mounting areas. Can supply.

また、縦横の単位実装領域を薄肉の連結部で連結することにより、複数の単位実装領域の集合体の全域に樹脂が広がり易くなり、該集合体への樹脂の供給を効率よく均一に行なうことができる   In addition, by connecting the vertical and horizontal unit mounting areas with thin connection portions, the resin can easily spread over the entire assembly of the plurality of unit mounting areas, and the resin can be efficiently and uniformly supplied to the assembly. Can

また、支持部を薄肉部とすることにより、複数の単位実装領域の集合体と枠体との間の隙間に樹脂が広がり易くなり、該集合体への樹脂の供給を効率よく均一にできる。   Further, by making the support part a thin part, the resin can easily spread in the gap between the assembly of the plurality of unit mounting regions and the frame, and the supply of the resin to the assembly can be made uniform efficiently.

また、支持部を薄肉の支持片とすることにより、支持部を薄肉部に構成することが容易になり、複数の単位実装領域の集合体と枠体との間の隙間への樹脂の広がり性、及び該集合体への樹脂の効率よく且つ均一な供給性を一層向上させることができる。   In addition, by making the support part a thin support piece, it becomes easy to configure the support part to be a thin part, and the spreadability of the resin into the gap between the assembly of a plurality of unit mounting regions and the frame body , And the efficient and uniform supply of the resin to the aggregate can be further improved.

また、切欠き溝を、枠体の集合体を囲む枠辺うち、互いに離隔するリード部間の樹脂充填空間が延びる方向に対して交わる方向に延びている枠辺に設けることにより、リードフレームの一端から他端まで延び、樹脂が流過するのを遮るもののない樹脂充填空間が樹脂の主流路となるので、樹脂が複数の単位実装領域の集合体全域にほぼ均一に行き渡り易くなり、樹脂の供給速度を高め、特性のばらつきが非常に少なく、且つ絶縁不良が確実に防止された機械強度の高い光半導体装置を最終的に得ることができる。   In addition, by providing the notch groove on the frame side that surrounds the assembly of the frame body, the frame side that extends in the direction intersecting the direction in which the resin filling space between the lead parts spaced apart from each other extends, the lead frame Since the resin filling space that extends from one end to the other end and does not block the flow of the resin becomes the main flow path of the resin, the resin is likely to be distributed almost uniformly throughout the assembly of the plurality of unit mounting areas. It is possible to finally obtain an optical semiconductor device with high mechanical strength in which supply speed is increased, characteristic variation is extremely small, and insulation failure is reliably prevented.

また、切欠き溝を、隣接する単位実装領域間の位置に対向する位置に開口させることにより、リードフレームの一端から他端まで延び、樹脂が流過するのを遮るものの少ない単位実装領域間の空間が樹脂の主流路となるので、樹脂が複数の単位実装領域の集合体全域に行き渡り易くなり、樹脂の供給速度を高め、特性のばらつきが少ない光半導体装置を最終的に得ることができる。   In addition, by opening the notch groove at a position opposite to the position between the adjacent unit mounting areas, the lead frame extends from one end to the other end, and between the unit mounting areas with little blockage of resin flow. Since the space becomes the main flow path of the resin, the resin can easily spread over the entire assembly of the plurality of unit mounting regions, the resin supply speed can be increased, and an optical semiconductor device with little variation in characteristics can be finally obtained.

本発明の光半導体用樹脂成形体は、上記した光半導体用リードフレームのいずれかと、該リードフレームに一体成形される樹脂層とよりなり、表裏に各リード部の上下面がそれぞれ露出するように構成されている。この構成によれば、上記光半導体用リードフレームに樹脂層を一体成形をしているので、単位実装領域周辺の樹脂層に亀裂、欠け、部分的な剥離等の欠陥の発生が防止された樹脂成形体となり、この樹脂成形体を用いれば、信頼性が高くかつ特性のばらつきが少ない最終製品（光半導体装置）を非常に低い不良品率で得ることができる。   The resin molded body for optical semiconductors of the present invention comprises any one of the above-described lead frames for optical semiconductors and a resin layer integrally molded with the lead frame, so that the upper and lower surfaces of each lead portion are exposed on the front and back surfaces, respectively. It is configured. According to this configuration, since the resin layer is integrally formed on the optical semiconductor lead frame, a resin in which defects such as cracks, chips, and partial peeling are prevented from occurring in the resin layer around the unit mounting region. By using this resin molded body, it is possible to obtain a final product (optical semiconductor device) with high reliability and little variation in characteristics at a very low defective product rate.

また、樹脂層を、光半導体用リードフレームの板厚内の空間に充填される樹脂により該リードフレームに一体成形することにより、表裏に各リード部の上下面がそれぞれ露出し、且つリードフレームの板厚とほぼ同じ厚みを有する平板型（フラット型）の光半導体用樹脂成形体とすることができる。   Also, by integrally molding the resin layer on the lead frame with a resin that fills the space within the thickness of the optical semiconductor lead frame, the upper and lower surfaces of each lead portion are exposed on the front and back surfaces, respectively, and the lead frame It can be set as the flat type | mold resin molding for optical semiconductors which has the substantially same thickness as plate | board thickness.

本発明の光半導体用樹脂成形体の製造方法は、光半導体用リードフレームを上下から挟み込む上下金型（成形金型）のうち、一方の金型における該リードフレームの枠体に設けられた切欠き溝の当該金型側の開口部に対応する位置に、該開口部を通じて切欠き溝内部に連通するゲート部を設けるとともに、該ゲート部に樹脂を供給するランナーを設け、これら上下金型を用いて樹脂層を該リードフレームに一体成形することを特徴とする。本発明の製造方法によれば、各単位実装領域周辺の樹脂層における亀裂、欠け、部分的な剥離等の欠陥の発生が防止された樹脂成形体を効率良く製造できる。   The method for producing an optical semiconductor resin molding according to the present invention includes a cutting die provided on a frame of one of the upper and lower molds (molding molds) sandwiching the optical semiconductor lead frame from above and below. A gate portion communicating with the inside of the notch groove through the opening is provided at a position corresponding to the opening on the die side of the notch groove, and a runner for supplying resin to the gate portion is provided. And a resin layer is integrally formed on the lead frame. According to the manufacturing method of the present invention, it is possible to efficiently manufacture a resin molded body in which the occurrence of defects such as cracks, chips and partial peeling in the resin layer around each unit mounting region is prevented.

また、上下金型を用いたトランスファモールド成形より硬化性樹脂を充填してリードフレームに硬化性樹脂層を容易に且つ効率良く一体成形することができる。   Also, the curable resin layer can be easily and efficiently integrally formed on the lead frame by filling the curable resin by transfer molding using the upper and lower molds.

本発明の光半導体パッケージは、上記光半導体用樹脂成形体と、単位実装領域の各々に対応して設けられ、それぞれ光半導体用樹脂成形体の表面に露出している各リード部に通電可能に実装される光半導体素子と、各光半導体素子を透光性樹脂で封止してなる透光性樹脂層と、よりなる。本発明の光半導体パッケージは、上記光半導体用リードフレームに樹脂層を一体成形した光半導体用樹脂成形体を用いているので、各単位実装領域周辺の樹脂層における亀裂、欠け、部分的な剥離等の欠陥の発生が防止されている。   The optical semiconductor package of the present invention is provided corresponding to each of the optical semiconductor resin molded body and the unit mounting region, and can be energized to each lead portion exposed on the surface of the optical semiconductor resin molded body. An optical semiconductor element to be mounted and a translucent resin layer formed by sealing each optical semiconductor element with a translucent resin. Since the optical semiconductor package of the present invention uses an optical semiconductor resin molded body in which a resin layer is formed integrally with the optical semiconductor lead frame, cracks, chips, and partial peeling in the resin layer around each unit mounting region The occurrence of such defects is prevented.

本発明の光半導体パッケージを光半導体素子ごとに個片化することにより、信頼性が高くかつ特性のばらつきが少ない光半導体装置を非常に低い不良品率で得ることができる。   By separating the optical semiconductor package of the present invention into individual optical semiconductor elements, an optical semiconductor device with high reliability and little variation in characteristics can be obtained with a very low defective product rate.

本発明の第１実施形態であるリードフレームの構成を模式的に示す上面図である。1 is a top view schematically showing a configuration of a lead frame according to a first embodiment of the present invention. 図１に示される切り欠き溝のＸ−Ｘ切断面線における断面図である。It is sectional drawing in the XX cut surface line of the notch groove shown by FIG. 単位実装領域を拡大して示す上面図である。It is a top view which expands and shows a unit mounting area. 図３に示される単位実装領域のＹ−Ｙ切断面線における断面図である。It is sectional drawing in the YY cut surface line of the unit mounting area | region shown by FIG. 図１に示すリードフレームの変形例を示す上面図である。FIG. 8 is a top view showing a modification of the lead frame shown in FIG. 1. 図１に示すリードフレームの変形例を示す上面図である。FIG. 8 is a top view showing a modification of the lead frame shown in FIG. 1. 図１に示すリードフレームの変形例を示す上面図である。FIG. 8 is a top view showing a modification of the lead frame shown in FIG. 1. 本発明の第２実施形態であるリードフレームの構成を模式的に示す上面図である。It is a top view which shows typically the structure of the lead frame which is 2nd Embodiment of this invention. 図８に示すリードフレームの変形例を示す上面図である。FIG. 9 is a top view showing a modification of the lead frame shown in FIG. 8. 図８に示すリードフレームの変形例を示す上面図である。FIG. 9 is a top view showing a modification of the lead frame shown in FIG. 8. 図８に示すリードフレームの変形例を示す上面図である。FIG. 9 is a top view showing a modification of the lead frame shown in FIG. 8. 図８に示すリードフレームの変形例を示す上面図である。FIG. 9 is a top view showing a modification of the lead frame shown in FIG. 8. 図８に示すリードフレームの変形例を示す上面図である。FIG. 9 is a top view showing a modification of the lead frame shown in FIG. 8. 樹脂成形体作製時におけるリードフレームと成形金型との位置関係を概略的に示す断面図である。It is sectional drawing which shows roughly the positional relationship of a lead frame and a shaping | molding die at the time of resin molding production. 本発明の第３実施形態である樹脂成形体の構成を模式的に示す上面図である。It is a top view which shows typically the structure of the resin molding which is 3rd Embodiment of this invention. 本発明の第４実施形態である光半導体装置の構成を模式的に示す斜視図である。It is a perspective view which shows typically the structure of the optical semiconductor device which is 4th Embodiment of this invention. 別形態の樹脂成形体の構成を模式的に示す図面である。It is drawing which shows the structure of the resin molding of another form typically. 別形態の光半導体装置の構成を模式的に示す斜視図である。It is a perspective view which shows typically the structure of the optical semiconductor device of another form.

次に、本発明の実施形態を添付図面に基づき詳細に説明する。   Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明の第１実施形態に係るリードフレーム１の全体構成を模式的に示す上面図である。なお、横方向及び縦方向に配列される単位実装領域１０の個数は特に限定されず、それぞれ任意の個数とすることができる。図２は、図１に示される切り欠き溝１４のＸ−Ｘ切断面線における断面図である。図３は、単位実装領域１０を拡大して示す上面図である。図４は、図３に示される単位実装領域１０のＹ−Ｙ切断面線における断面図である。   FIG. 1 is a top view schematically showing the overall configuration of the lead frame 1 according to the first embodiment of the present invention. The number of unit mounting regions 10 arranged in the horizontal direction and the vertical direction is not particularly limited, and can be any number. FIG. 2 is a cross-sectional view taken along the line XX of the notch groove 14 shown in FIG. FIG. 3 is an enlarged top view showing the unit mounting area 10. FIG. 4 is a cross-sectional view of the unit mounting region 10 shown in FIG.

リードフレーム１は、互いに離隔する第１、第２のリード部２０、２１からなる単位実装領域１０が、縦横に複数連設された集合体１１と、集合体１１の周りに、隙間２５を空けて設けられる枠体１２と、集合体１１のうち周端に配された単位実装領域１０ｘと枠体１２とを連結し、枠体１２の内側に集合体１１を支持する支持部１３と、枠体１２における隙間２５を臨む内側端面２６に開口する樹脂注入用の切欠き溝１４とを備えている。   The lead frame 1 includes an assembly 11 in which a plurality of unit mounting regions 10 including first and second lead portions 20 and 21 that are spaced apart from each other are connected in series, and a gap 25 is provided around the assembly 11. A frame 12 provided by connecting the unit mounting region 10x disposed at the peripheral edge of the aggregate 11 and the frame 12, and supporting the aggregate 11 inside the frame 12; A notch groove 14 for injecting resin is provided in the inner end face 26 facing the gap 25 in the body 12.

リードフレーム１において、複数の単位実装領域１０は帯状の金属片である第１、第２、第３の連結部２７、２８、２９により縦横に連結され、集合体１１を構成することにより、１の単位実装領域１０の第１、第２のリード部２０、２１周りの樹脂充填空間を、縦横に隣接する他の単位実装領域１０の樹脂充填空間に連通させることができる。その結果、樹脂を縦横の単位実装領域１０に効率よく且つ均一に供給できる。なお、複数個の集合体１１を、枠体１２及びその両側の隙間２５を介して横方向及び／又は縦方向に配列してリードフレームを構成しても良い。その場合、集合体１１毎に切欠き溝１４を設けてもよく、或いは所定の位置に一又は複数の切欠き溝１４を設けても良い。   In the lead frame 1, the plurality of unit mounting regions 10 are connected vertically and horizontally by first, second, and third connecting portions 27, 28, and 29 that are band-shaped metal pieces to constitute an aggregate 11. The resin filling spaces around the first and second lead portions 20 and 21 of the unit mounting region 10 can be communicated with the resin filling spaces of other unit mounting regions 10 that are adjacent vertically and horizontally. As a result, the resin can be efficiently and uniformly supplied to the vertical and horizontal unit mounting regions 10. Note that a lead frame may be configured by arranging a plurality of assemblies 11 in the horizontal direction and / or the vertical direction via the frame 12 and the gaps 25 on both sides thereof. In that case, the notch groove 14 may be provided for each aggregate 11, or one or more notch grooves 14 may be provided at predetermined positions.

また、第１、第２、第３の連結部２７、２８、２９をハーフエッチング等により第１、第２のリード部２０、２１よりも薄肉とすることにより、集合体１１の全域に樹脂が広がり易くなり、集合体１１への樹脂の供給を効率よく均一に行なうことができる。   Further, by making the first, second, and third connecting portions 27, 28, and 29 thinner than the first and second lead portions 20, 21 by half etching or the like, the resin is spread over the entire area of the aggregate 11. It becomes easy to spread and the resin can be efficiently and uniformly supplied to the aggregate 11.

図３に示すように、１個の単位実装領域１０において、第１、第２のリード部２０、２１は、縦方向に帯状に延びる空間部分であるスリット部２２により、互いに離隔するように配置されている。第１、第２のリード部２０、２１は、厚みが相対的に厚い部分と相対的に薄い部分とを有し、両者の境界を点線で示している。点線で囲まれた内側領域２０ａ、２１ａは厚みが相対的に厚い部分であり、点線より外側に拡がる外側領域２０ｂ、２１ｂは厚みが相対的に薄い部分である。本実施形態では、図４のように、外側領域２０ｂ、２１ｂは、例えばハーフエッチング等を利用して裏面を薄肉化している。   As shown in FIG. 3, in one unit mounting region 10, the first and second lead portions 20 and 21 are arranged so as to be separated from each other by a slit portion 22 that is a space portion extending in a strip shape in the vertical direction. Has been. The first and second lead portions 20 and 21 have a relatively thick portion and a relatively thin portion, and the boundary between them is indicated by a dotted line. The inner regions 20a and 21a surrounded by dotted lines are portions having a relatively large thickness, and the outer regions 20b and 21b extending outward from the dotted line are portions having a relatively thin thickness. In the present embodiment, as shown in FIG. 4, the outer regions 20b and 21b are thinned on the back surface by using, for example, half etching.

支持部１３は、集合体１１と枠辺１２とを連結する部材であり、本実施形態では、薄肉の金属片である支持片として構成されている。支持部１３を薄肉部とすることにより、集合体１１と枠体１２との間の隙間２５に樹脂が広がり易くなり、集合体１１への樹脂の供給を効率よく均一にできる。また、支持部１３を薄肉の支持片とすることにより、支持部１３を薄肉化することが容易になり、集合体１１と枠体１２との間の隙間２５への樹脂の広がり性、及び集合体１１への樹脂の効率よく且つ均一な供給性を一層向上させることができる。   The support portion 13 is a member that connects the aggregate 11 and the frame side 12 and is configured as a support piece that is a thin metal piece in the present embodiment. By making the support portion 13 a thin portion, the resin can easily spread in the gap 25 between the assembly 11 and the frame 12, and the supply of the resin to the assembly 11 can be made uniform efficiently. Further, by making the support portion 13 a thin support piece, it becomes easy to make the support portion 13 thinner, and the spread of the resin into the gap 25 between the assembly 11 and the frame body 12, and the assembly Efficient and uniform supply of the resin to the body 11 can be further improved.

切欠き溝１４は、図１及び図２に示すように、枠体１２における枠辺１２ａの横方向ほぼ中央部において、枠辺１２ａの縦方向途中部から縦方向上方に延び、枠辺１２ａの隙間２５を臨む内側端面２６に開口する平面視ほぼＵの字状の有底溝である。切欠き溝１４の開口は、隙間２５を介して横方向に隣り合う単位実装領域１０間の樹脂充填空間（一方の単位実装領域１０の第１のリード部２０と他方の単位実装領域１０の第２のリード部２１との間の樹脂充填空間）と対向している。ここで、切り欠き溝１４が設けられる枠辺１２ａは、前記樹脂充填空間が延びる方向に対して交わる方向に延びる枠体１２の一枠辺である。   As shown in FIGS. 1 and 2, the notch groove 14 extends from the middle in the vertical direction of the frame side 12 a to the upper side of the frame side 12 a at a substantially central portion in the horizontal direction of the frame side 12 a of the frame body 12. It is a bottomed groove having a substantially U-shape in plan view that opens to the inner end face 26 facing the gap 25. The opening of the notch groove 14 is a resin-filled space between the unit mounting regions 10 that are laterally adjacent to each other through the gap 25 (the first lead portion 20 of one unit mounting region 10 and the first unit mounting region 10 of the other unit mounting region 10). 2 and the resin filling space between the two lead portions 21). Here, the frame side 12a provided with the notch groove 14 is one frame side extending in a direction intersecting with the direction in which the resin filling space extends.

切欠き溝１４の開口が隙間２５を介して対向する樹脂充填空間は、リードフレーム１の縦方向の一端から他端まで延び、樹脂が流過するのを遮るものが横方向に延びる第３の連結部２９のみと少なく、樹脂の主流路となるので、樹脂が集合体１１の全域にほぼ均一に行き渡り、特性のばらつきが非常に少なく、且つ絶縁不良が確実に防止された機械強度の高い光半導体装置を最終的に得ることができる。ここで、第３の連結部２９の表面及び／又は裏面の少なくとも一部をハーフエッチング等により除去し、第３の連結部２９を薄肉化することで、樹脂が一層円滑に流れる。   A resin filling space in which the opening of the notch groove 14 faces through the gap 25 extends from one end to the other end in the longitudinal direction of the lead frame 1, and the third that extends in the lateral direction blocks the resin from flowing through. Since only the connecting portion 29 becomes a main resin flow path, the resin spreads almost uniformly over the entire area of the assembly 11, and there is very little variation in characteristics, and light with high mechanical strength in which insulation failure is reliably prevented. A semiconductor device can finally be obtained. Here, at least a part of the front surface and / or the back surface of the third connecting portion 29 is removed by half etching or the like, and the third connecting portion 29 is thinned, whereby the resin flows more smoothly.

切欠き溝１４を設けることにより、トランスファモールド成形により作製された光半導体用樹脂成形体を成形金型から脱型する際に、樹脂層の破断位置が、該樹脂成形体における単位実装領域１０周辺からリードフレーム１の枠辺１２ａに形成された切欠き溝１４周辺に遠ざかり、各単位実装領域１０周辺の樹脂層に破断の影響が及ばなくなるので、単位実装領域１０上及びその周辺の樹脂層に亀裂、欠け、単位実装領域からの剥離等の欠陥が発生するのを防止でき、最終製品である光半導体装置の不良品率を顕著に低下させることができる。また、集合体１１と枠体１２との間の隙間２５を通じて集合体１１への樹脂の注入を効率よく実施でき、且つ樹脂をリードフレーム１全体に満遍なく均一に行き渡らせることができる。切欠き溝１４は、例えばハーフエッチング等により形成される。   By providing the notch groove 14, when the resin molded body for optical semiconductors produced by transfer molding is removed from the molding die, the break position of the resin layer is the periphery of the unit mounting region 10 in the resin molded body. From the periphery of the notch groove 14 formed on the frame side 12a of the lead frame 1, and the resin layer around each unit mounting region 10 is not affected by the breakage. It is possible to prevent the occurrence of defects such as cracks, chips, and peeling from the unit mounting area, and to significantly reduce the defective product rate of the optical semiconductor device as the final product. In addition, the resin can be efficiently injected into the assembly 11 through the gap 25 between the assembly 11 and the frame body 12, and the resin can be evenly and uniformly distributed throughout the lead frame 1. The cutout groove 14 is formed by, for example, half etching.

本実施形態では、切欠き溝１４の開口が、隙間２５を介して、横方向に隣り合う一対の単位実装領域１０間の縦方向に延びる樹脂充填空間に対向するように配置しているが、これに限定されず、縦方向に延びるスリット部２２に対向するように配置しても良い。スリット部２２には樹脂の流れを遮るものがないので、樹脂がより円滑に流れ、上記と同様の効果が得られると共に、第１、第２のリード部２０、２１間が確実に絶縁される。   In the present embodiment, the opening of the notch groove 14 is disposed so as to face the resin filling space extending in the vertical direction between the pair of unit mounting regions 10 adjacent in the horizontal direction via the gap 25. It is not limited to this, You may arrange | position so as to oppose the slit part 22 extended in the vertical direction. Since there is nothing to block the resin flow in the slit portion 22, the resin flows more smoothly, the same effect as described above can be obtained, and the first and second lead portions 20, 21 are reliably insulated. .

脱型時における樹脂層の破断を切欠き溝１４の周辺領域で確実に発生させるためには、切欠き溝１４を設けると共に、隙間２５を設けることが必要である。従来のリードフレームにおける枠辺に切欠き溝を単に設けるだけでは、樹脂層の破断領域を切欠き溝周辺とすることは困難である。また、隙間２５は、その幅がスリット部２２や縦方向又は横方向に隣り合う一対の単位実装領域１０間の樹脂充填空間の幅よりも大きくなるように構成することが好ましい。これにより、切欠き溝１４内に形成された樹脂層及びその周辺の樹脂層がより確実に脱型時における破断領域となると共に、リードフレーム１への樹脂の供給性をより一層向上させることができる。   In order to reliably cause the resin layer to break in the peripheral region of the notch groove 14 at the time of demolding, it is necessary to provide the notch groove 14 and the clearance 25. It is difficult to make the rupture region of the resin layer around the notch groove by simply providing the notch groove on the frame side of the conventional lead frame. Further, the gap 25 is preferably configured so that the width thereof is larger than the width of the resin filling space between the slit portion 22 and a pair of unit mounting regions 10 adjacent in the vertical direction or the horizontal direction. As a result, the resin layer formed in the notch groove 14 and the resin layer around the resin layer can more surely become a rupture region at the time of demolding, and further improve the supply of resin to the lead frame 1. it can.

なお、ここでいう幅は、長手方向に対して垂直な方向の長さであり、例えば、枠辺１２ａに沿う隙間２５は枠辺１２ａと同様に横方向に延びており、この隙間２５の延びる方向が長手方向と一致する。また、縦方向に隣り合う一対の単位実装領域１０間の樹脂充填空間は横方向が長手方向であり、スリット部２２や横方向に隣り合う一対の単位実装領域１０間の樹脂充填空間は縦方向が長手方向である。   The width here is the length in the direction perpendicular to the longitudinal direction. For example, the gap 25 along the frame side 12a extends in the horizontal direction like the frame side 12a, and the gap 25 extends. The direction coincides with the longitudinal direction. Further, the resin filling space between the pair of unit mounting regions 10 adjacent in the vertical direction is the longitudinal direction, and the resin filling space between the pair of unit mounting regions 10 adjacent in the horizontal direction is the vertical direction. Is the longitudinal direction.

リードフレーム１は、例えば、電気良導体である金属材料からなる金属薄板に公知の打ち抜き加工又はエッチング加工を施し、更に必要に応じてハーフエッチング加工を施すことにより作製できる。金属材料としては、例えば、鉄、銅、リン青銅、銅合金等が挙げられる。また、単位実装領域１０の表面には、めっき層等の金属層を形成してもよい。金属層の材質としては、例えば、金、銀、銅、アルミニウム等が挙げられる。   The lead frame 1 can be manufactured, for example, by subjecting a thin metal plate made of a metal material, which is a good electrical conductor, to a known punching or etching process and, if necessary, a half-etching process. Examples of the metal material include iron, copper, phosphor bronze, copper alloy, and the like. Further, a metal layer such as a plating layer may be formed on the surface of the unit mounting region 10. Examples of the material for the metal layer include gold, silver, copper, and aluminum.

図５〜７は、それぞれ切欠き溝１４の変形例１４Ａ〜１４Ｃを示す上面図である。切欠き溝１４Ａ〜１４Ｃは、平面視形状以外は、切欠き溝１４と同じ構成を有しており、切り欠き溝１４Ａの平面視形状は、ほぼ長方形であり、且つ枠辺１２ａの縦方向途中部に位置する２つの角が丸まった形状であり（図５）、切欠き溝１４Ｂの平面視形状はほぼ長方形状であり（図６）、切欠き溝１４Ｃの平面視形状はほぼ二等辺三角形状である（図７）。   5 to 7 are top views showing modified examples 14A to 14C of the notch groove 14, respectively. The cutout grooves 14A to 14C have the same configuration as the cutout groove 14 except for the shape in plan view, and the cutout groove 14A has a substantially rectangular shape in plan view and halfway in the vertical direction of the frame side 12a. The two corners positioned in the section are rounded (FIG. 5), the shape of the cutout groove 14B in plan view is substantially rectangular (FIG. 6), and the shape of the cutout groove 14C in plan view is substantially isosceles triangular. Shape (FIG. 7).

図８は、本発明の第２実施形態であるリードフレーム２の構成を模式的に示す上面図である。図９〜１３は、それぞれリードフレーム２の変形例２Ａ〜２Ｅを示す上面図である。リードフレーム２及び２Ａ〜２Ｅは、切欠き溝１４の個数及び配置位置以外は、リードフレーム１と同じ構成及び変形例を有している。   FIG. 8 is a top view schematically showing the configuration of the lead frame 2 according to the second embodiment of the present invention. 9 to 13 are top views showing modified examples 2A to 2E of the lead frame 2, respectively. The lead frames 2 and 2A to 2E have the same configuration and modification as the lead frame 1 except for the number and arrangement positions of the notch grooves 14.

リードフレーム２は、複数の有底の切欠き溝１４を有することを特徴とし、より具体的には、枠辺１２ａに３つの切欠き溝１４が横方向にほぼ等間隔で配列されている。３つの切欠き溝１４はそれぞれ、その開口が横方向に隣り合う一対の単位実装領域１０間の縦方向に延びる樹脂充填空間と対向するように配置されている。このように、一つの枠辺１２ａに複数の切欠き溝１４を設けることにより、集合体１１全域への樹脂の流れがより円滑になり、特性がほぼ均一な光半導体装置を得ることができる。また、樹脂成形体の成形金型からの脱型の際に、樹脂層の破断位置が複数に増加するので、各位置における破断の衝撃が緩和され、単位実装領域１０の周辺の樹脂層に亀裂、欠け、単位実装領域からの剥離等の欠陥が発生するのをより確実に防止できる。   The lead frame 2 is characterized by having a plurality of bottomed cutout grooves 14, and more specifically, three cutout grooves 14 are arranged in the frame side 12a at substantially equal intervals in the lateral direction. Each of the three notch grooves 14 is arranged so that the opening thereof faces a resin filling space extending in the vertical direction between a pair of unit mounting regions 10 adjacent in the horizontal direction. As described above, by providing the plurality of cutout grooves 14 in one frame side 12a, the flow of the resin to the entire area of the aggregate 11 becomes smoother, and an optical semiconductor device having substantially uniform characteristics can be obtained. In addition, when the resin molded body is removed from the molding die, the number of fracture positions of the resin layer increases, so that the impact of the fracture at each position is mitigated, and the resin layer around the unit mounting area 10 is cracked. It is possible to more reliably prevent defects such as chipping and peeling from the unit mounting area.

リードフレーム２Ａは、横方向に隣り合う一対の単位実装領域１０間の縦方向に延びる樹脂充填空間（以下、「樹脂充填空間Ｘ」と称す。）毎に複数の切欠き溝１４が枠辺１２ａに配置されている（図９）。リードフレーム２Ｂは、枠辺１２ａとそれに対向する枠辺１２ｂのそれぞれ横方向中央部に、２つの切欠き溝１４が樹脂充填空間Ｘを介して対向するように配置されている（図１０）。リードフレーム２Ｃは、枠辺１２ａ、１２ｂにそれぞれ１個の切欠き溝１４が設けられ、２つの切欠き溝１４がリードフレーム２Ｃの対角線（不図示）の両末端近傍に配置されている（図１１）。   In the lead frame 2A, a plurality of cutout grooves 14 are formed in the frame side 12a for each resin filling space (hereinafter referred to as “resin filling space X”) extending in the vertical direction between a pair of unit mounting regions 10 adjacent in the horizontal direction. (FIG. 9). The lead frame 2B is arranged in such a manner that the two notch grooves 14 are opposed to each other through the resin filling space X in the center portion in the horizontal direction of the frame side 12a and the frame side 12b opposite to the frame side 12a (FIG. 10). The lead frame 2C is provided with one notch groove 14 on each of the frame sides 12a and 12b, and the two notch grooves 14 are disposed near both ends of a diagonal line (not shown) of the lead frame 2C (see FIG. 11).

リードフレーム２Ｄは、枠体１２の縦方向に延びる枠辺１２ｃにおける縦方向のほぼ中央部に、横方向に延びる切欠き溝１４を上下に２個並べて配置し、２つの切欠き溝１４は共に、隙間２５を介して、縦方向に隣り合う一対の単位実装領域１０間の横方向に延びる樹脂充填空間Ｙと対向するように設けられている（図１２）。本実施形態でも、切欠き溝１４が配置される枠辺１２ｃの延びる方向と、樹脂充填空間Ｙの延びる方向とは交わっている。また、本実施形態のように、樹脂充填空間Ｙが樹脂流路となるように構成しても、集合体１１の全域に樹脂が万遍なく行き渡る効果が得られ、樹脂成形体の金型脱型時における樹脂層の破断位置を切欠き溝１４の周辺とすることができる。   In the lead frame 2D, two cutout grooves 14 extending in the horizontal direction are arranged side by side at the substantially central portion in the vertical direction of the frame side 12c extending in the vertical direction of the frame body 12, and the two cutout grooves 14 are both arranged. Further, it is provided so as to face the resin filling space Y extending in the horizontal direction between the pair of unit mounting regions 10 adjacent in the vertical direction via the gap 25 (FIG. 12). Also in this embodiment, the extending direction of the frame side 12c in which the notch groove 14 is arranged intersects the extending direction of the resin filling space Y. In addition, even if the resin-filled space Y is configured as a resin flow path as in the present embodiment, the effect of spreading the resin uniformly over the entire area of the assembly 11 is obtained, and the mold removal of the resin molded body is achieved. The breaking position of the resin layer at the time of molding can be set around the notch groove 14.

リードフレーム２Ｅは、切欠き溝１５が枠辺１２ａに設けられ、枠辺１２ａを横方向に延びる主流路３１と、主流路３１から縦方向に枝分かれして隙間２５に向かい、その開口が隙間２５を介して樹脂充填空間Ｘと対向する分岐路３２とからなる溝であることを特徴とする（図１３）。分岐路３２は複数個設けられ、それぞれの開口が隙間２５を介して樹脂充填空間Ｘと対向している。   In the lead frame 2E, a notch groove 15 is provided in the frame side 12a, a main flow path 31 extending in the horizontal direction on the frame side 12a, and a branch from the main flow path 31 in the vertical direction toward the gap 25. It is a groove | channel which consists of the branch path 32 which opposes the resin filling space X through (FIG. 13). A plurality of branch paths 32 are provided, and each opening faces the resin filling space X with a gap 25 interposed therebetween.

本実施形態では、主流路３１と複数の分岐路３２とを有する切欠き溝１５としているが、これに限定されず、切欠き溝１４、１５を混在させてもよい。本実施形態のように切欠き溝１５を構成しても、樹脂成形体の脱型時に樹脂層の破断位置が切欠き溝１５周辺の横方向に延びる領域内となり、単位実装領域１０上の樹脂層に亀裂、欠け、単位実装領域からの剥離等の欠陥が発生するのを防止できる。   In the present embodiment, the cutout groove 15 having the main flow path 31 and the plurality of branch paths 32 is used, but the present invention is not limited to this, and the cutout grooves 14 and 15 may be mixed. Even if the notch groove 15 is configured as in the present embodiment, the resin layer breaks at the time of demolding the resin layer within the region extending in the lateral direction around the notch groove 15, and the resin on the unit mounting region 10. It is possible to prevent the occurrence of defects such as cracks, chips, and peeling from the unit mounting area in the layer.

図１５は、本発明の第３実施形態である樹脂成形体４の構成を模式的に示す図面である。図１５（ａ）は樹脂成形体４の表面（光半導体素子実装面）の状態を示す平面図であり、図１５（ｂ）は樹脂成形体４の裏面の状態を示す平面図である。   FIG. 15 is a drawing schematically showing a configuration of a resin molded body 4 according to the third embodiment of the present invention. FIG. 15A is a plan view showing the state of the surface (optical semiconductor element mounting surface) of the resin molded body 4, and FIG. 15B is a plan view showing the state of the back surface of the resin molded body 4.

樹脂成形体４は、リードフレーム１と、該リードフレーム１に一体成形された樹脂層５０とよりなり、その表面には第１、第２のリード部２０、２１が露出し、その裏面には第１、第２のリード部２０、２１における内側領域２０ａ、２１ａの裏面がそれぞれ露出していることを特徴とする。   The resin molded body 4 includes a lead frame 1 and a resin layer 50 integrally formed with the lead frame 1, and the first and second lead portions 20 and 21 are exposed on the surface, and the back surface is exposed. The back surfaces of the inner regions 20a and 21a in the first and second lead portions 20 and 21 are exposed, respectively.

リードフレーム１の第１、第２のリード部２０、２１における外側領域２０ｂ、２１ｂは、図４に示すように、裏面の少なくとも一部がハーフエッチングにより除去されることで薄肉化されている。このため、樹脂成形体４の表面では第１、第２のリード部２０、２１の表面のほぼ全域が露出し、裏面では内側領域２０ａ、２１ａのみを残して樹脂層５０が形成され、スリット部２２には内側領域２０ａ、２１ａの板厚と同じ厚みを有する樹脂層５０が一体成形され、平板型（フラット型）の樹脂成形体４となっている。   As shown in FIG. 4, the outer regions 20b and 21b in the first and second lead portions 20 and 21 of the lead frame 1 are thinned by removing at least a part of the back surface by half etching. For this reason, almost the entire surface of the surface of the first and second lead portions 20 and 21 is exposed on the surface of the resin molded body 4, and the resin layer 50 is formed on the back surface, leaving only the inner regions 20a and 21a. A resin layer 50 having the same thickness as that of the inner regions 20a and 21a is integrally formed on the plate 22 to form a flat plate type resin molded body 4.

このような樹脂成形体４は、例えば、リードフレーム１を上下から挟み込む上下金型からなる成形金型であって、一方の金型におけるリードフレーム１の枠体１２に設けられた切欠き溝１４の当該金型側の開口部に対応する位置に、該開口部を通じて切欠き溝１４内部に連通するゲート部を設けるとともに、該ゲート部に樹脂を供給するランナーを設けた、成形金型を用いることにより作製できる。   Such a resin molded body 4 is, for example, a molding die composed of upper and lower molds sandwiching the lead frame 1 from above and below, and a notch groove 14 provided in the frame body 12 of the lead frame 1 in one mold. A molding die having a gate portion communicating with the inside of the notch groove 14 through the opening and a runner for supplying resin to the gate portion is used at a position corresponding to the opening on the die side. Can be produced.

図１４は、樹脂成形体４作製時におけるリードフレーム１と成形金型３５との位置関係を概略的に示す断面図である。図１４は、図１に示すＺ−Ｚ切断面線における断面図である。   FIG. 14 is a cross-sectional view schematically showing the positional relationship between the lead frame 1 and the molding die 35 when the resin molded body 4 is produced. FIG. 14 is a cross-sectional view taken along the line ZZ in FIG.

成形金型３５は上金型４０と下金型４１とを備え、上金型４０及び下金型４１を閉じ合わせた時にこれらの下面と上面とにより、図１４の紙面において左から右に向かう方向に延び、樹脂供給路となるランナー３６が形成され、ランナー３６の右側先端部には樹脂注入口であるゲート部３７が形成される。リードフレーム１は、ゲート部３７がリードフレーム１の切欠き溝１４の成形金型３５側開口部の上方に位置するように成形金型３５の上金型４０と下金型４１とにより挟みこまれる。これにより、ゲート部３７が切欠き溝１４とランナー３６とを連通させる。ランナー３６及びゲート部３７を介してリードフレーム１に樹脂を供給し、例えば熱硬化させることにより樹脂層５０を形成し、樹脂成形体４を得る。樹脂成形体４の成形金型３５からの脱型に際しては、切欠き溝１４に充填された樹脂層の少なくとも一部を起点として樹脂層５０の破断が起こるので、リードフレーム１の単位実装領域１０上及びその周辺の樹脂層５０に上記した種々の欠陥が発生することが防止される。   The molding die 35 includes an upper die 40 and a lower die 41. When the upper die 40 and the lower die 41 are closed, the lower surface and the upper surface thereof cause the left to right in the drawing of FIG. A runner 36 that extends in the direction and serves as a resin supply path is formed, and a gate portion 37 that is a resin injection port is formed at the right end of the runner 36. The lead frame 1 is sandwiched between the upper mold 40 and the lower mold 41 of the molding die 35 so that the gate portion 37 is located above the opening of the notch groove 14 of the lead frame 1 on the molding die 35 side. It is. Thereby, the gate part 37 makes the notch groove 14 and the runner 36 communicate. Resin is supplied to the lead frame 1 through the runner 36 and the gate part 37, and the resin layer 50 is formed by thermosetting, for example, and the resin molding 4 is obtained. When the resin molded body 4 is removed from the molding die 35, the resin layer 50 is broken starting from at least a part of the resin layer filled in the notch groove 14. Therefore, the unit mounting region 10 of the lead frame 1 is broken. It is possible to prevent the above-described various defects from occurring in the resin layer 50 on and around it.

なお、リードフレーム１への樹脂の供給性等を考慮すると、成形金型３５及び熱硬化性樹脂を用いて、トランスファモールド成形を行ない、樹脂層５０をリードフレーム１に一体成形することが好ましい。   In consideration of the supply ability of the resin to the lead frame 1 and the like, it is preferable to perform transfer molding using the molding die 35 and the thermosetting resin and integrally mold the resin layer 50 to the lead frame 1.

図１６は、本発明の第４実施形態である光半導体装置５の構成を模式的に示す斜視図である。   FIG. 16 is a perspective view schematically showing a configuration of an optical semiconductor device 5 according to the fourth embodiment of the present invention.

光半導体装置５は、樹脂成形体４を単位実装領域１０毎に個片化した基板５１と、基板５１の表面に露出している第１のリード部２０の内側領域２０ａに固定される光半導体素子５２と、内側領域２０ａと光半導体素子５２とを電気的に接続する金線等のワイヤボンディング５３と、基板５１の表面に露出している第２のリード部２１の内側領域２１ａと光半導体素子５２とを電気的に接続するワイヤボンディング５４と、光半導体素子５２及びワイヤボンディング５３、５４、更には内側領域２０ａ、２１ａを透光性樹脂で封止した透光性樹脂層５５と、を備えている。   The optical semiconductor device 5 includes an optical semiconductor fixed to a substrate 51 obtained by dividing the resin molded body 4 into individual unit mounting regions 10 and an inner region 20 a of the first lead portion 20 exposed on the surface of the substrate 51. Wire bonding 53 such as a gold wire for electrically connecting the element 52, the inner region 20a and the optical semiconductor element 52, the inner region 21a of the second lead portion 21 exposed on the surface of the substrate 51, and the optical semiconductor Wire bonding 54 for electrically connecting the element 52, and the light-semiconductor element 52 and the wire bondings 53 and 54, and the translucent resin layer 55 in which the inner regions 20a and 21a are sealed with a translucent resin. I have.

光半導体装置５は、例えば、樹脂成形体４の表面に露出している第１、第２のリード部２０、２１の内側領域２０ａ、２１ａにワイヤボンディング５３、５４により通電可能に実装される複数の光半導体素子５２と、これらを透光性樹脂で封止した透光性樹脂層５５と、よりなる光半導体パッケージを作製し、この光半導体パッケージを光半導体素子５２ごとに個片化することにより作製できる。本実施形態では、透光性樹脂層５５は平板型に形成されているが、これに限定されず、レンズ状等の任意の形状に適宜形成することができる。   The optical semiconductor device 5 is, for example, a plurality of optical semiconductor devices 5 that are mounted on the inner regions 20a and 21a of the first and second lead portions 20 and 21 exposed on the surface of the resin molded body 4 so as to be energized by wire bonding 53 and 54. An optical semiconductor package comprising the optical semiconductor element 52, a translucent resin layer 55 in which these are sealed with a translucent resin, and the optical semiconductor package is separated into individual optical semiconductor elements 52. Can be produced. In the present embodiment, the translucent resin layer 55 is formed in a flat plate shape, but is not limited thereto, and can be appropriately formed in an arbitrary shape such as a lens shape.

光半導体装置５は、本発明の実施形態に係るリードフレームを用いて作製されているため、単位実装領域１０に形成された樹脂層５０に亀裂、欠け、剥離等の欠陥が極めて少ないため、電気特性や耐用性等の点で、長期的な信頼性の高いものとなっている。   Since the optical semiconductor device 5 is manufactured using the lead frame according to the embodiment of the present invention, the resin layer 50 formed in the unit mounting region 10 has very few defects such as cracks, chips, and peeling. It has long-term reliability in terms of characteristics and durability.

図１７は、別形態の樹脂成形体６の構成を模式的に示す図面である。図１７（ａ）は樹脂成形体６の全体構成を概略的に示す斜視図である。図１７（ｂ）は樹脂成形体６の要部の構成を模式的に示す平面図である。図１７（ｃ）は樹脂成形体６を単位実装領域１０毎に個片化したリフレクタ７の構成を模式的に示す斜視図である。図１７（ｄ）はリフレクタ７の断面図である。図１８は別形態の光半導体装置８の構成を模式的に示す斜視図である。   FIG. 17 is a drawing schematically showing a configuration of another form of the resin molded body 6. FIG. 17A is a perspective view schematically showing the overall configuration of the resin molded body 6. FIG. 17B is a plan view schematically showing the configuration of the main part of the resin molded body 6. FIG. 17C is a perspective view schematically showing a configuration of the reflector 7 in which the resin molded body 6 is divided into pieces for each unit mounting region 10. FIG. 17D is a cross-sectional view of the reflector 7. FIG. 18 is a perspective view schematically showing a configuration of an optical semiconductor device 8 of another form.

樹脂成形体６は、リードフレーム１と、リードフレーム１の表面に一体成形された樹脂層６０と、底面６２に第１、第２のリード部の内側領域２０ａ、２１ａが露出した凹部６１とを備える薄板である。樹脂層６０は、凹部６１を形成する穴を複数有し、光半導体素子からの光を所定の方向に反射する反射部６３と、第１、第２のリード部間のスリット部２２に充填された絶縁部６４とからなる。樹脂成形体６の裏面には、樹脂成形体５の裏面（図１８（ｂ））と同様に、第１、第２のリード部の内側領域２０ａ、２１ａの裏面が露出し、樹脂層６０の裏面と同一平面上にある。   The resin molded body 6 includes a lead frame 1, a resin layer 60 integrally formed on the surface of the lead frame 1, and a recess 61 in which the inner regions 20 a and 21 a of the first and second lead portions are exposed on the bottom surface 62. It is a thin plate provided. The resin layer 60 has a plurality of holes for forming the recesses 61, and is filled in the reflection part 63 that reflects light from the optical semiconductor element in a predetermined direction and the slit part 22 between the first and second lead parts. And an insulating part 64. On the back surface of the resin molded body 6, the back surfaces of the inner regions 20 a and 21 a of the first and second lead portions are exposed in the same manner as the back surface of the resin molded body 5 (FIG. 18B). It is on the same plane as the back side.

図１７（ｃ）に示すリフレクタ７は、１個の単位実装領域１０と、単位実装領域１０の表面（光半導体素子実装面）の及び裏面の一部に形成された樹脂層６０と、底面６２に第１、第２のリード部の内側領域２０ａ、２１ａが露出した凹部６１とを備え、その側面に、第１、第２、第３の連結片２７、２８、２９の各断面２７ａ、２８ａ、２９ａが露出している以外は、樹脂層６０の断面となっている。   The reflector 7 shown in FIG. 17C includes one unit mounting region 10, a resin layer 60 formed on a part of the front surface (optical semiconductor element mounting surface) and the back surface of the unit mounting region 10, and a bottom surface 62. And the recesses 61 in which the inner regions 20a and 21a of the first and second lead portions are exposed, and the cross sections 27a and 28a of the first, second, and third connecting pieces 27, 28, and 29 are provided on the side surfaces thereof. , 29a is exposed, and the resin layer 60 has a cross section.

ここで、樹脂成形体６の各底面６２又はリフレクタ７の底面６２に露出する第１、第２のリード部の内側領域２０ａ、２１ａにワイヤボンディング等により光半導体素子を実装した後、凹部６１に透光性樹脂を充填して透光性樹脂層を形成することにより、光半導体パッケージ又は光半導体装置をえることができる。   Here, after mounting an optical semiconductor element by wire bonding or the like on the inner regions 20a, 21a of the first and second lead portions exposed on the bottom surfaces 62 of the resin molded body 6 or the bottom surface 62 of the reflector 7, By filling the light-transmitting resin and forming the light-transmitting resin layer, an optical semiconductor package or an optical semiconductor device can be obtained.

光半導体装置８は、１個の単位実装領域１０と、単位実装領域１０の表面（光半導体素子実装面）の及び裏面の一部に形成された樹脂層６０と、底面６２に内側領域２０ａ、２１ａが露出した凹部６１と、内側領域２０ａに固定される光半導体素子５２と、内側領域２０ａと光半導体素子５２とを電気的に接続するワイヤボンディング５３と、内側領域２１ａと光半導体素子５２とを電気的に接続するワイヤボンディング５４とを備えている。光半導体装置８は、光半導体装置５と同様の効果を有している。   The optical semiconductor device 8 includes one unit mounting region 10, a resin layer 60 formed on a part of the front surface (optical semiconductor element mounting surface) and the back surface of the unit mounting region 10, and an inner region 20a on the bottom surface 62. A recess 61 in which 21a is exposed, an optical semiconductor element 52 fixed to the inner area 20a, a wire bonding 53 that electrically connects the inner area 20a and the optical semiconductor element 52, an inner area 21a, and the optical semiconductor element 52 And wire bonding 54 for electrical connection. The optical semiconductor device 8 has the same effect as the optical semiconductor device 5.

上記した光半導体装置に係る各実施形態では、第１のリード部の内側領域に光半導体素子を実装しているが、これに限定されず、第２のリード部の内側領域に光半導体素子を実装しても良い。   In each of the embodiments according to the optical semiconductor device described above, the optical semiconductor element is mounted in the inner region of the first lead part. However, the present invention is not limited to this, and the optical semiconductor element is provided in the inner region of the second lead part. May be implemented.

以上、本発明の実施形態について説明したが、本発明はこうした実施例に何ら限定されるものではなく、本発明の要旨を逸脱しない範囲において種々なる形態で実施し得ることは勿論である。   Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and can of course be implemented in various forms without departing from the gist of the present invention.

１、２、２Ａ、２Ｂ、２Ｃ、２Ｄ、２Ｅ リードフレーム
４、６ 樹脂成形体
５、８ 光半導体装置
７ リフレクタ
１０、１０ｘ 単位実装領域
１１ 集合体
１２ 枠体
１２ａ、１２ｂ、１２ｃ 枠辺
１３ 支持部
１４、１４Ａ、１４Ｂ、１４Ｃ、１５ 切欠き溝
２０、２３ 第１のリード部
２０ａ、２１ａ 内側領域
２０ｂ、２１ｂ 外側領域
２１、２４ 第２のリード部
２２ スリット部
２５ 隙間
２６ 内側端面
２７ 第１の連結部
２８ 第２の連結部
２９ 第３の連結部
３１ 主流路
３２ 分岐路
３５ 成形金型
３６ ランナー
３７ ゲート部
４０ 上金型
４１ 下金型
５０、６０ 樹脂層
５１ 基板
５２ 光半導体素子
５３、５４ ワイヤボンディング
５５ 透光性樹脂層
６１ 凹部
６２ 底面
６３ 反射部
６４ 絶縁部 1, 2, 2A, 2B, 2C, 2D, 2E Lead frame 4, 6 Resin molded body 5, 8 Optical semiconductor device 7 Reflector 10, 10x Unit mounting area 11 Assembly 12 Frame body 12a, 12b, 12c Frame side 13 Support Part 14, 14A, 14B, 14C, 15 Notch groove 20, 23 First lead part 20a, 21a Inner area 20b, 21b Outer area 21, 24 Second lead part 22 Slit part 25 Gap 26 Inner end face 27 First Connecting portion 28 second connecting portion 29 third connecting portion 31 main flow path 32 branching path 35 molding die 36 runner 37 gate portion 40 upper die 41 lower die 50, 60 resin layer 51 substrate 52 optical semiconductor element 53 , 54 Wire bonding 55 Translucent resin layer 61 Recessed portion 62 Bottom surface 63 Reflecting portion 64 Insulating portion

Claims (13)

２以上の互いに離隔するリード部からなる単位実装領域が、縦横に複数連設されてなる光半導体用リードフレームであって、
前記複数の単位実装領域の集合体の周りに、隙間を空けて枠体を設け、
前記集合体のうち周端に配された単位実装領域と前記枠体とを連結し、枠体の内側に前記集合体を支持する支持部を設け、
前記枠体に、前記隙間を臨む内側端面に開口する樹脂注入用の切欠き溝を設けてなることを特徴とする光半導体用リードフレーム。 An optical semiconductor lead frame in which a plurality of unit mounting regions composed of two or more lead portions spaced apart from each other are provided in series in a vertical and horizontal direction,
Around the aggregate of the plurality of unit mounting areas, a frame is provided with a gap,
A unit mounting region disposed at a peripheral edge of the aggregate and the frame are connected, and a support portion for supporting the aggregate is provided inside the frame,
A lead frame for an optical semiconductor, wherein the frame body is provided with a notch groove for injecting resin that opens at an inner end face facing the gap. フレーム内部の前記単位実装領域のリード部周りの樹脂充填空間を、縦横に隣接する他の単位実装領域の同じく樹脂充填空間に連通させてなる請求項１記載の光半導体用リードフレーム。   2. The lead frame for an optical semiconductor according to claim 1, wherein a resin filling space around the lead portion in the unit mounting area inside the frame is communicated with the resin filling space in other unit mounting areas adjacent vertically and horizontally. 縦横の単位実装領域を薄肉の連結部で連結してなる請求項２記載の光半導体用リードフレーム。   3. The lead frame for an optical semiconductor according to claim 2, wherein the vertical and horizontal unit mounting areas are connected by a thin connecting portion. 前記支持部を、薄肉部より構成してなる請求項１〜３の何れか１項に記載の光半導体用リードフレーム。   The lead frame for optical semiconductors according to any one of claims 1 to 3, wherein the support portion is formed of a thin portion. 前記支持部を、薄肉の支持片より構成してなる請求項４記載の光半導体用リードフレーム。   The lead frame for an optical semiconductor according to claim 4, wherein the support portion is constituted by a thin support piece. 前記切欠き溝を、前記枠体の前記集合体を囲む枠辺うち、前記互いに離隔するリード部間の樹脂充填空間が延びる方向に対して交わる方向に延びている枠辺に設けてなる請求項１〜５の何れか１項に記載の光半導体用リードフレーム。   The notch groove is provided on a frame side that extends in a direction intersecting with a direction in which a resin filling space between the lead portions spaced apart from each other extends among the frame sides surrounding the aggregate of the frame bodies. The lead frame for optical semiconductors of any one of 1-5. 前記切欠き溝を、隣接する単位実装領域間の位置に対向する位置に開口させてなる請求項１〜６の何れか１項に記載の光半導体用リードフレーム。   The optical semiconductor lead frame according to any one of claims 1 to 6, wherein the notch groove is opened at a position opposite to a position between adjacent unit mounting regions. 請求項１〜７の何れか１項に記載の光半導体用リードフレームと、
該リードフレームに一体成形される樹脂層とよりなり、
表裏に各リード部の上下面がそれぞれ露出した光半導体用樹脂成形体。 A lead frame for optical semiconductors according to any one of claims 1 to 7,
A resin layer integrally formed with the lead frame;
An optical semiconductor resin molded body in which the upper and lower surfaces of each lead portion are exposed on the front and back surfaces. 前記樹脂層を、前記リードフレームの板厚内の空間に充填される樹脂により該リードフレームに一体成形してなり、表裏に各リード部の上下面がそれぞれ露出し、且つ前記リードフレームの板厚と同じ厚みを有する平板型である請求項８記載の光半導体用樹脂成形体。   The resin layer is integrally formed on the lead frame with a resin filled in a space within the thickness of the lead frame, the upper and lower surfaces of each lead portion are exposed on the front and back surfaces, and the thickness of the lead frame The resin molded body for optical semiconductors according to claim 8, which is a flat plate type having the same thickness as the above. 請求項８又は９記載の光半導体用樹脂成形体の製造方法であって、
前記光半導体用リードフレームを上下から挟み込む上下金型のうち、一方の金型における前記リードフレームの枠体に設けられた前記切欠き溝の当該金型側の開口部に対応する位置に、該開口部を通じて切欠き溝内部に連通するゲート部を設けるとともに、該ゲート部に樹脂を供給するランナーを設け、これら上下金型を用いて前記樹脂層を前記リードフレームに一体成形することを特徴とする光半導体用樹脂成形体の製造方法。 It is a manufacturing method of the resin molding for optical semiconductors according to claim 8 or 9,
Of the upper and lower molds sandwiching the optical semiconductor lead frame from above and below, at a position corresponding to an opening on the mold side of the notch groove provided in the frame of the lead frame in one mold A gate portion communicating with the inside of the notch groove through the opening portion is provided, a runner for supplying resin to the gate portion is provided, and the resin layer is integrally formed on the lead frame using these upper and lower molds. The manufacturing method of the resin molding for optical semiconductors to do. 前記上下金型を用いたトランスファモールド成型より熱硬化性樹脂を充填して前記樹脂層を前記リードフレームに一体成形する請求項１０記載の光半導体用樹脂成形体の製造方法。   The method for producing a resin molded body for an optical semiconductor according to claim 10, wherein a thermosetting resin is filled by transfer molding using the upper and lower molds, and the resin layer is integrally formed on the lead frame. 請求項８又は９記載の光半導体用樹脂成形体と、
前記単位実装領域の各々に対応して設けられ、それぞれ前記光半導体用樹脂成形体の表面に露出している各リード部に通電可能に実装される光半導体素子と、
各光半導体素子を透光性樹脂で封止してなる透光性樹脂層と、
よりなる光半導体パッケージ。 A resin molded body for optical semiconductors according to claim 8 or 9,
An optical semiconductor element that is provided corresponding to each of the unit mounting regions, and is mounted so as to be energized to each lead portion exposed on the surface of the optical semiconductor resin molding,
A translucent resin layer formed by sealing each optical semiconductor element with a translucent resin;
An optical semiconductor package. 請求項１２記載の光半導体パッケージを、前記光半導体素子ごとに個片化してなる光半導体装置。   An optical semiconductor device obtained by dividing the optical semiconductor package according to claim 12 into pieces for each of the optical semiconductor elements.
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JP2015138943A (en) * 2014-01-24 2015-07-30 株式会社カネカ Lead frame for optical semiconductor, resin molding for optical semiconductor and manufacturing method therefor, optical semiconductor package and optical semiconductor device
JP2017041570A (en) * 2015-08-20 2017-02-23 株式会社カネカ Resin molding for mounting light-emitting element, surface mounting type light-emitting device, and lead frame used in resin molding for mounting light-emitting element
JP2021086866A (en) * 2019-11-25 2021-06-03 Ｔｏｗａ株式会社 Manufacturing method of resin-molded lead frame, manufacturing method of resin-molded product, and lead frame

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JP2015138943A (en) * 2014-01-24 2015-07-30 株式会社カネカ Lead frame for optical semiconductor, resin molding for optical semiconductor and manufacturing method therefor, optical semiconductor package and optical semiconductor device
JP2017041570A (en) * 2015-08-20 2017-02-23 株式会社カネカ Resin molding for mounting light-emitting element, surface mounting type light-emitting device, and lead frame used in resin molding for mounting light-emitting element
JP2021086866A (en) * 2019-11-25 2021-06-03 Ｔｏｗａ株式会社 Manufacturing method of resin-molded lead frame, manufacturing method of resin-molded product, and lead frame

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