JP2015111191A - 配線基板及び表示装置 - Google Patents
配線基板及び表示装置 Download PDFInfo
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- 239000012535 impurity Substances 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 229920005591 polysilicon Polymers 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 51
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 238000007689 inspection Methods 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 201000005947 Carney Complex Diseases 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 101001026573 Homo sapiens cAMP-dependent protein kinase type I-alpha regulatory subunit Proteins 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 102100037490 cAMP-dependent protein kinase type I-alpha regulatory subunit Human genes 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 101100352909 Homo sapiens PPP3CC gene Proteins 0.000 description 2
- 102100040320 Serine/threonine-protein phosphatase 2B catalytic subunit gamma isoform Human genes 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000021049 Carney complex type 2 Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
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Abstract
Description
ローレベルの電源電圧を供給するための第1パッド、ハイレベルの電源電圧を供給するための第2パッド、及び、画像を表示するのに必要な信号を供給するための第3パッドを含むパッド群と、共通配線と、前記第1パッドと前記共通配線とを接続する第1接続配線と、前記第2パッドと前記共通配線とを接続する第2接続配線と、前記第3パッドと前記共通配線とを接続する第3接続配線と、を備え、前記第1接続配線及び前記第2接続配線は不純物がドーピングされていないポリシリコンによって形成され、前記第3接続配線及び前記共通配線は不純物がドーピングされたポリシリコンによって形成された、配線基板が提供される。
ローレベルの電源電圧を供給するための第1パッドと、ハイレベルの電源電圧を供給するための第2パッドと、画像を表示するのに必要な信号を供給するための第3パッドと、前記第1パッドに接続された第1接続配線と、前記第2パッドに接続された第2接続配線と、前記第3パッドに接続された第3接続配線と、を備えた配線基板と、前記配線基板と対向する対向基板と、を備え、前記第1接続配線及び前記第2接続配線は不純物がドーピングされていないポリシリコンによって形成され、前記第3接続配線は不純物がドーピングされたポリシリコンによって形成された、表示装置が提供される。
ここに図示した表示装置DSPは、表示パネルPNLとして、アクティブマトリクスタイプの液晶表示パネルを備えた液晶表示装置であるが、有機EL表示パネルを備えた有機EL表示装置であっても良い。
AR…アレイ基板 CT…対向基板 LQ…液晶層
MS…配線基板 AA…領域 TP…検査パッド CL…割断予定線
SR…ショートリング CC…共通配線 CNC…接続配線
3I…入力パッド
Claims (5)
- ローレベルの電源電圧を供給するための第1パッド、ハイレベルの電源電圧を供給するための第2パッド、及び、画像を表示するのに必要な信号を供給するための第3パッドを含むパッド群と、
共通配線と、
前記第1パッドと前記共通配線とを接続する第1接続配線と、
前記第2パッドと前記共通配線とを接続する第2接続配線と、
前記第3パッドと前記共通配線とを接続する第3接続配線と、を備え、
前記第1接続配線及び前記第2接続配線は不純物がドーピングされていないポリシリコンによって形成され、前記第3接続配線及び前記共通配線は不純物がドーピングされたポリシリコンによって形成された、配線基板。 - 前記パッド群はアレイ基板として割断される割断予定線よりも内側に位置し、
前記共通配線は前記割断予定線よりも外側に位置する、請求項1に記載の配線基板。 - 前記第3接続配線及び前記共通配線にはn+不純物がドーピングされた、請求項1または2に記載の配線基板。
- 前記第1接続配線及び前記第2接続配線は、前記第3接続配線及び前記共通配線と反射率が異なる、請求項1乃至3のいずれか1項に記載の配線基板。
- ローレベルの電源電圧を供給するための第1パッドと、ハイレベルの電源電圧を供給するための第2パッドと、画像を表示するのに必要な信号を供給するための第3パッドと、前記第1パッドに接続された第1接続配線と、前記第2パッドに接続された第2接続配線と、前記第3パッドに接続された第3接続配線と、を備えた配線基板と、
前記配線基板と対向する対向基板と、を備え、
前記第1接続配線及び前記第2接続配線は不純物がドーピングされていないポリシリコンによって形成され、前記第3接続配線は不純物がドーピングされたポリシリコンによって形成された、表示装置。
Priority Applications (2)
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JP2013252951A JP6209434B2 (ja) | 2013-12-06 | 2013-12-06 | 配線基板及び表示装置 |
US14/560,229 US9548322B2 (en) | 2013-12-06 | 2014-12-04 | Display device |
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JP2013252951A JP6209434B2 (ja) | 2013-12-06 | 2013-12-06 | 配線基板及び表示装置 |
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Publication Number | Publication Date |
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JP2015111191A true JP2015111191A (ja) | 2015-06-18 |
JP6209434B2 JP6209434B2 (ja) | 2017-10-04 |
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US (1) | US9548322B2 (ja) |
JP (1) | JP6209434B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020193997A (ja) * | 2019-05-24 | 2020-12-03 | 富士通オプティカルコンポーネンツ株式会社 | 光デバイス、試験方法、光送受信装置、および製造方法 |
JP2021526658A (ja) * | 2018-06-12 | 2021-10-07 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | アレイ基板、アレイ基板の製造方法、アレイ基板マザーボード、表示パネル及び表示装置 |
WO2022205864A1 (zh) * | 2021-04-02 | 2022-10-06 | 京东方科技集团股份有限公司 | 显示基板、显示模组和显示装置 |
Families Citing this family (4)
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KR102462070B1 (ko) * | 2015-12-31 | 2022-11-01 | 엘지디스플레이 주식회사 | 디스플레이패널 및 그 검사 방법 |
WO2020118499A1 (zh) * | 2018-12-11 | 2020-06-18 | 上海箩箕技术有限公司 | 光学传感器及其形成方法 |
KR20210085999A (ko) * | 2019-12-31 | 2021-07-08 | 엘지디스플레이 주식회사 | 표시 패널 및 이를 이용한 대면적 표시 장치 |
CN114488632B (zh) * | 2022-01-27 | 2023-06-20 | 武汉天马微电子有限公司 | 一种显示面板、显示装置及其检测方法 |
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