JP2015086343A - 半導体接着用熱硬化型樹脂組成物及びそれを用いた半導体装置 - Google Patents
半導体接着用熱硬化型樹脂組成物及びそれを用いた半導体装置 Download PDFInfo
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- JP2015086343A JP2015086343A JP2013228455A JP2013228455A JP2015086343A JP 2015086343 A JP2015086343 A JP 2015086343A JP 2013228455 A JP2013228455 A JP 2013228455A JP 2013228455 A JP2013228455 A JP 2013228455A JP 2015086343 A JP2015086343 A JP 2015086343A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】(A)常温で液状であり、主鎖に脂肪族炭化水素基を有するビスマレイミド樹脂と、(B)アリル化ビスフェノールとエピクロルヒドリンとの重合物であるアリル化エポキシ樹脂と、(C)硬化剤と、(D)充填材と、を必須成分とし、(A)成分と(B)成分との質量比(A)/(B)が50/50〜95/5である半導体接着用熱硬化型樹脂組成物及び該熱硬化型樹脂組成物を用いて得られた半導体装置。
【選択図】なし
Description
本発明で使用される(A)成分は、常温で液状であり、主鎖に脂肪族炭化水素基を有するビスマレイミド樹脂であり、2つのマレイミド基を連結する主鎖が、炭素数が1以上の脂肪族炭化水素基を有して構成されるものである。ここで、脂肪族炭化水素基は、直鎖状、分枝鎖状及び環状のいずれの形態でもよく、炭素数が6以上であることが好ましく、炭素数が12以上であることがより好ましく、炭素数が24以上であることが特に好ましい。また、この脂肪族炭化水素基はマレイミド基に直接結合していることが好ましい。
本発明の半導体装置は、本発明の半導体接着用熱硬化型樹脂組成物を用いて公知の方法により製造でき、例えば、半導体素子と半導体素子支持部材との間に上記樹脂組成物を介して接着、固定することにより行われる。例えば、本発明の半導体接着用熱硬化型樹脂組成物介して半導体素子をその支持部材であるリードフレームにマウントし、半導体接着用熱硬化型樹脂組成物を加熱硬化させた後、リードフレームのリード部と半導体素子上の電極とをワイヤボンディングにより接続し、次いで、これらを封止樹脂により封止して製造することができる。ボンディングワイヤとしては、例えば、銅、金、アルミ、金合金、アルミニウム−シリコン等からなるワイヤが例示される。また、導電性ペーストを硬化させる際の温度は、通常、100〜230℃であり、好ましくは100〜200℃であり、銅製リードフレームを使用している場合は190℃以下が特に好ましく、0.5〜2時間程度加熱することが好ましい。
表1の配合に従って各成分を混合し、ロールで混練して半導体接着用のペースト状の熱硬化型樹脂組成物を製造した。得られた半導体接着用樹脂組成物を以下の方法で評価した。その結果を表1に併せて示した。なお、この実施例及び比較例で用いた材料は以下の通りである。
(B)成分:ジアリルビスフェノールAジグリシジルエーテル型エポキシ樹脂(日本化薬株式会社製、商品名:RE−810NM;エポキシ当量 223、加水分解性塩素 150ppm(1N KOH−エタノール、ジオキサン溶媒、還流30分)
(B)成分以外のエポキシ樹脂:ビスフェノールFジグリシジルエーテル型エポキシ樹脂(日本化薬株式会社製、商品名:RE−404S;エポキシ当量 165、加水分解性塩素 500ppm(1N KOH−エタノール、ジオキサン溶媒、還流30分)
(C)成分:ジクミルパーオキサイド(日本油脂株式会社製、商品名:パークミルD)
(D)成分:銀粉(粒径 0.1〜30μm、平均粒径 3μm、フレーク状)
カップリング剤2:X−12−1015M(信越化学工業株式会社製、商品名;チオウレタン系シランカップリング剤)
密着付与剤:アクターR(川口化学工業株式会社製、商品名)
希釈剤:FA−513M(日立化成工業株式会社製、商品名)
[硬化性]:4mm×4mmのシリコンチップを、各例の半導体用樹脂組成物を用いて銅フレームにマウントし、大気中において、170℃、60分で硬化した。硬化後にフィレット部の硬化性を触診にて確認して評価した。
昇温速度:5℃/分
周波数:1Hz
荷重:100mN
ここで、25℃における貯蔵弾性率を弾性率とし5000MPa以下の場合を合格とした。弾性率の単位はMPaである。
[熱時接着強度]:6mm×6mmのシリコンチップを、半導体接着用熱硬化型樹脂組成物を用いて銅フレーム上にマウントし、170℃で60分間加熱硬化させた。硬化後に垂直方向に引張り、接着強度測定装置を用い、260℃環境下での接着強度を測定した。
[吸湿後熱時接着強度]:6mm×6mmのシリコンチップを、半導体接着用熱硬化型樹脂組成物を用いて銅フレーム上にマウントし、170℃で60分間加熱硬化させた。得られた半導体装置を、85℃/相対湿度85%/168時間吸湿処理した後に、垂直方向に引張り、接着強度測定装置を用い、260℃環境下での接着強度を測定した。
チップサイズ:4mm×4mm(表面アルミニウム配線のみ)
リードフレーム:銅
封止材の成形:175℃、1分間
ポストモールドキュアー:175℃、6時間
Claims (5)
- (A)常温で液状であり、主鎖に脂肪族炭化水素基を有するビスマレイミド樹脂と、
(B)アリル化ビスフェノールとエピクロルヒドリンとの重合物であるアリル化エポキシ樹脂と、
(C)硬化剤と、
(D)充填材と、
を必須成分とし、
前記(A)成分と前記(B)成分との質量比(A)/(B)が50/50〜95/5であることを特徴とする半導体接着用熱硬化型樹脂組成物。 - 前記(D)成分が銀粉であることを特徴とする請求項1乃至3のいずれか1項記載の半導体接着用熱硬化型樹脂組成物。
- 請求項1乃至4のいずれか1項記載の半導体接着用熱硬化型樹脂組成物を介して、半導体素子を半導体素子支持部材上に接着してなることを特徴とする半導体装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004107501A (ja) * | 2002-09-19 | 2004-04-08 | Nippon Kayaku Co Ltd | エポキシ樹脂、エポキシ樹脂組成物及びその硬化物 |
JP2007146171A (ja) * | 2007-01-05 | 2007-06-14 | Nippon Kayaku Co Ltd | ダイボンディングペースト用エポキシ樹脂組成物 |
JP2008031357A (ja) * | 2006-07-31 | 2008-02-14 | Sumitomo Bakelite Co Ltd | 液状樹脂組成物及び液状樹脂組成物を使用して作製した半導体装置 |
JP2009227939A (ja) * | 2008-03-25 | 2009-10-08 | Sumitomo Bakelite Co Ltd | アンダーフィル用液状樹脂組成物、半導体装置および半導体装置の製造方法 |
WO2011125778A1 (ja) * | 2010-04-01 | 2011-10-13 | 日立化成工業株式会社 | 接着剤組成物、接着シート及び半導体装置 |
JP2012117070A (ja) * | 2003-05-05 | 2012-06-21 | Designer Molecules Inc | イミド−リンクしたマレインイミドおよびポリマレインイミド化合物 |
-
2013
- 2013-11-01 JP JP2013228455A patent/JP6348700B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004107501A (ja) * | 2002-09-19 | 2004-04-08 | Nippon Kayaku Co Ltd | エポキシ樹脂、エポキシ樹脂組成物及びその硬化物 |
JP2012117070A (ja) * | 2003-05-05 | 2012-06-21 | Designer Molecules Inc | イミド−リンクしたマレインイミドおよびポリマレインイミド化合物 |
JP2008031357A (ja) * | 2006-07-31 | 2008-02-14 | Sumitomo Bakelite Co Ltd | 液状樹脂組成物及び液状樹脂組成物を使用して作製した半導体装置 |
JP2007146171A (ja) * | 2007-01-05 | 2007-06-14 | Nippon Kayaku Co Ltd | ダイボンディングペースト用エポキシ樹脂組成物 |
JP2009227939A (ja) * | 2008-03-25 | 2009-10-08 | Sumitomo Bakelite Co Ltd | アンダーフィル用液状樹脂組成物、半導体装置および半導体装置の製造方法 |
WO2011125778A1 (ja) * | 2010-04-01 | 2011-10-13 | 日立化成工業株式会社 | 接着剤組成物、接着シート及び半導体装置 |
Cited By (17)
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JP2016222819A (ja) * | 2015-06-01 | 2016-12-28 | 京セラ株式会社 | 半導体接着用樹脂組成物及び半導体装置 |
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JP2017088745A (ja) * | 2015-11-11 | 2017-05-25 | 三菱瓦斯化学株式会社 | 樹脂組成物、プリプレグ、金属箔張積層板、樹脂シート及びプリント配線板 |
JP2017132877A (ja) * | 2016-01-27 | 2017-08-03 | 京セラ株式会社 | 半導体接着用樹脂組成物及び半導体装置 |
JPWO2018008643A1 (ja) * | 2016-07-05 | 2019-04-25 | 日立化成株式会社 | 樹脂組成物、樹脂フィルム、積層板、多層プリント配線板及び多層プリント配線板の製造方法 |
WO2018008643A1 (ja) * | 2016-07-05 | 2018-01-11 | 日立化成株式会社 | 樹脂組成物、樹脂フィルム、積層板、多層プリント配線板及び多層プリント配線板の製造方法 |
KR20220025080A (ko) * | 2016-07-05 | 2022-03-03 | 쇼와덴코머티리얼즈가부시끼가이샤 | 수지 조성물, 수지 필름, 적층판, 다층 프린트 배선판 및 다층 프린트 배선판의 제조 방법 |
JP7036010B2 (ja) | 2016-07-05 | 2022-03-15 | 昭和電工マテリアルズ株式会社 | 樹脂組成物、樹脂フィルム、積層板、多層プリント配線板及び多層プリント配線板の製造方法 |
US11339251B2 (en) | 2016-07-05 | 2022-05-24 | Showa Denko Materials Co., Ltd. | Resin composition, resin film, laminate, multilayer printed wiring board and method for producing multilayer printed wiring board |
KR102537178B1 (ko) * | 2016-07-05 | 2023-05-30 | 가부시끼가이샤 레조낙 | 수지 조성물, 수지 필름, 적층판, 다층 프린트 배선판 및 다층 프린트 배선판의 제조 방법 |
JP2018024747A (ja) * | 2016-08-09 | 2018-02-15 | 京セラ株式会社 | 封止用樹脂組成物及び半導体装置 |
JP2018035321A (ja) * | 2016-09-02 | 2018-03-08 | 日立化成株式会社 | 両親媒性化合物を含有するワニスの水洗方法 |
WO2020196070A1 (ja) * | 2019-03-22 | 2020-10-01 | リンテック株式会社 | 樹脂シート |
US20230064310A1 (en) * | 2020-01-16 | 2023-03-02 | Lintec Corporation | Resin sheet |
US20230090587A1 (en) * | 2020-01-16 | 2023-03-23 | Lintec Corporation | Resin sheet |
US20230097896A1 (en) * | 2020-01-16 | 2023-03-30 | Lintec Corporation | Resin sheet |
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