JP2015072201A - 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法 - Google Patents

半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法 Download PDF

Info

Publication number
JP2015072201A
JP2015072201A JP2013208107A JP2013208107A JP2015072201A JP 2015072201 A JP2015072201 A JP 2015072201A JP 2013208107 A JP2013208107 A JP 2013208107A JP 2013208107 A JP2013208107 A JP 2013208107A JP 2015072201 A JP2015072201 A JP 2015072201A
Authority
JP
Japan
Prior art keywords
semiconductor
less
radiation detector
full width
half maximum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013208107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015072201A5 (enExample
Inventor
信也 小南
Shinya Kominami
信也 小南
久実 甕
Hisami Motai
久実 甕
啓司 小橋
Keiji Kobashi
啓司 小橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Aloka Medical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Aloka Medical Ltd filed Critical Hitachi Aloka Medical Ltd
Priority to JP2013208107A priority Critical patent/JP2015072201A/ja
Priority to CN201480052242.3A priority patent/CN105579868A/zh
Priority to US15/025,580 priority patent/US20160206257A1/en
Priority to PCT/JP2014/076195 priority patent/WO2015050141A1/ja
Priority to EP14851321.1A priority patent/EP3054321A4/en
Publication of JP2015072201A publication Critical patent/JP2015072201A/ja
Publication of JP2015072201A5 publication Critical patent/JP2015072201A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
    • A61B6/4258—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector for detecting non x-ray radiation, e.g. gamma radiation
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4266—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a plurality of detector units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medical Informatics (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Heart & Thoracic Surgery (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biomedical Technology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biophysics (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Nuclear Medicine (AREA)
  • Light Receiving Elements (AREA)
  • Manufacturing & Machinery (AREA)
JP2013208107A 2013-10-03 2013-10-03 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法 Pending JP2015072201A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013208107A JP2015072201A (ja) 2013-10-03 2013-10-03 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法
CN201480052242.3A CN105579868A (zh) 2013-10-03 2014-09-30 半导体放射线检测器、使用其的核医学诊断装置、以及半导体放射线检测器的制造方法
US15/025,580 US20160206257A1 (en) 2013-10-03 2014-09-30 Semiconductor radiation detector, nuclear medicine diagnostic device using that detector, and manufacturing method of semiconductor radiation detector
PCT/JP2014/076195 WO2015050141A1 (ja) 2013-10-03 2014-09-30 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法
EP14851321.1A EP3054321A4 (en) 2013-10-03 2014-09-30 Semiconductor radiation detector, nuclear medicine diagnostic device using same, and method for producing semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013208107A JP2015072201A (ja) 2013-10-03 2013-10-03 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法

Publications (2)

Publication Number Publication Date
JP2015072201A true JP2015072201A (ja) 2015-04-16
JP2015072201A5 JP2015072201A5 (enExample) 2016-06-23

Family

ID=52778729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013208107A Pending JP2015072201A (ja) 2013-10-03 2013-10-03 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法

Country Status (5)

Country Link
US (1) US20160206257A1 (enExample)
EP (1) EP3054321A4 (enExample)
JP (1) JP2015072201A (enExample)
CN (1) CN105579868A (enExample)
WO (1) WO2015050141A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108763758A (zh) * 2018-05-29 2018-11-06 南京航空航天大学 一种非完备环状pet旋转扫描模式的gate仿真方法
WO2020100467A1 (ja) * 2018-11-12 2020-05-22 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP2020115150A (ja) * 2020-04-06 2020-07-30 浜松ホトニクス株式会社 放射線検出器の製造方法
JP2021006832A (ja) * 2018-10-31 2021-01-21 浜松ホトニクス株式会社 放射線検出器製造方法
US11307315B2 (en) 2016-07-11 2022-04-19 Hamamatsu Photonics K.K. Radiation detector

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105759304B (zh) * 2016-04-22 2018-08-14 西北核技术研究所 一种基于平晶衍射成像的x射线能谱测量方法
EP3704515B1 (en) * 2017-10-30 2022-04-06 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector with dc-to-dc converter based on mems switches
CN108345026B (zh) * 2018-02-09 2021-06-15 哈尔滨工业大学 一种计算带电粒子防护层后能谱的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223009A (ja) * 2004-02-03 2005-08-18 Hitachi Ltd 半導体放射線検出器及び放射線検出装置
WO2009022378A1 (ja) * 2007-08-10 2009-02-19 Osaka Electro-Communication University 放射線検出装置
JP2011185803A (ja) * 2010-03-10 2011-09-22 Hitachi Ltd 放射線計測装置および核医学診断装置
JP2012167938A (ja) * 2011-02-10 2012-09-06 Hitachi Ltd 放射線計測装置および核医学診断装置
US20130126746A1 (en) * 2010-05-03 2013-05-23 Brookhaven Science Associates, Llc Array of virtual frisch-grid detectors with common cathode and reduced length of shielding electrodes
JP2013156048A (ja) * 2012-01-27 2013-08-15 Hitachi Ltd 半導体放射線検出器および核医学診断装置
JP2013157494A (ja) * 2012-01-31 2013-08-15 Jx Nippon Mining & Metals Corp 放射線検出素子、放射線検出器、および放射線検出素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001349948A (ja) * 2000-06-08 2001-12-21 Nec Corp Ｘ線発光素子
JP3863873B2 (ja) * 2003-09-30 2006-12-27 株式会社日立製作所 放射線検査装置
JP2009286856A (ja) * 2008-05-27 2009-12-10 Fukuda Crystal Laboratory シンチレータ材料とその製造方法、及び、電離放射線検出器
WO2011010724A1 (ja) * 2009-07-23 2011-01-27 住友電気工業株式会社 半導体結晶の製造方法、半導体結晶の製造装置および半導体結晶

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223009A (ja) * 2004-02-03 2005-08-18 Hitachi Ltd 半導体放射線検出器及び放射線検出装置
WO2009022378A1 (ja) * 2007-08-10 2009-02-19 Osaka Electro-Communication University 放射線検出装置
JP2011185803A (ja) * 2010-03-10 2011-09-22 Hitachi Ltd 放射線計測装置および核医学診断装置
US20130126746A1 (en) * 2010-05-03 2013-05-23 Brookhaven Science Associates, Llc Array of virtual frisch-grid detectors with common cathode and reduced length of shielding electrodes
JP2012167938A (ja) * 2011-02-10 2012-09-06 Hitachi Ltd 放射線計測装置および核医学診断装置
JP2013156048A (ja) * 2012-01-27 2013-08-15 Hitachi Ltd 半導体放射線検出器および核医学診断装置
JP2013157494A (ja) * 2012-01-31 2013-08-15 Jx Nippon Mining & Metals Corp 放射線検出素子、放射線検出器、および放射線検出素子の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DONGXIANG ZHOU ET AL.: "A Novel Method to Grow Thallium Bromide Single Crystal and Crystal", CRYSTAL GROWTH & DESIGN, vol. Vol. 9, No. 10, 2009, JPN7017002814, 15 September 2009 (2009-09-15), US, pages 4296 - 4300, ISSN: 0003750109 *
V.KOZLOV ET AL.: "Annealing and characterisation of TlBr crystals", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, vol. A 546(2005), JPN6017032587, 7 April 2005 (2005-04-07), US, pages 200 - 204, ISSN: 0003750108 *
V.KOZLOV ET AL.: "TlBr crystal growth, purification and characterisation", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, vol. A 531(2004), JPN6017032585, 22 June 2004 (2004-06-22), US, pages 165 - 173, ISSN: 0003750107 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11307315B2 (en) 2016-07-11 2022-04-19 Hamamatsu Photonics K.K. Radiation detector
US11555934B2 (en) 2016-07-11 2023-01-17 Hamamatsu Photonics K.K. Radiation detector
CN108763758A (zh) * 2018-05-29 2018-11-06 南京航空航天大学 一种非完备环状pet旋转扫描模式的gate仿真方法
CN108763758B (zh) * 2018-05-29 2022-05-03 南京航空航天大学 一种非完备环状pet旋转扫描模式的gate仿真方法
JP2021006832A (ja) * 2018-10-31 2021-01-21 浜松ホトニクス株式会社 放射線検出器製造方法
WO2020100467A1 (ja) * 2018-11-12 2020-05-22 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP2020079727A (ja) * 2018-11-12 2020-05-28 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP2020115150A (ja) * 2020-04-06 2020-07-30 浜松ホトニクス株式会社 放射線検出器の製造方法
JP7051928B2 (ja) 2020-04-06 2022-04-11 浜松ホトニクス株式会社 放射線検出器の製造方法

Also Published As

Publication number Publication date
EP3054321A1 (en) 2016-08-10
EP3054321A4 (en) 2017-05-31
WO2015050141A1 (ja) 2015-04-09
CN105579868A (zh) 2016-05-11
US20160206257A1 (en) 2016-07-21

Similar Documents

Publication Publication Date Title
JP6049166B2 (ja) 半導体放射線検出器およびそれを用いた核医学診断装置
WO2015050141A1 (ja) 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法
Hou et al. Materials innovation and electrical engineering in X-ray detection
US8816292B2 (en) Compact endocavity diagnostic probes for nuclear radiation detection
Churilov et al. Thallium bromide nuclear radiation detector development
JP5753802B2 (ja) 半導体放射線検出器および核医学診断装置
Gokhale et al. Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors
Hitomi et al. TlBr capacitive Frisch grid detectors
Onodera et al. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging
Onodera et al. Spectroscopic performance of pixellated thallium bromide detectors
Hitomi et al. Recent development of TlBr gamma-ray detectors
JP5485197B2 (ja) 放射線計測装置および核医学診断装置
Hitomi et al. TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique
Hitomi et al. Timing performance of TlBr detectors
EP3073291A1 (en) Radiation detection element, radiation detector provided with same, nuclear medicine diagnosis device and method for producing radiation detection element
Li et al. A new method for growing detector-grade cadmium zinc telluride crystals
Hitomi et al. Thallium lead iodide radiation detectors
Roos Semiconductor Detectors
Russo et al. Solid-state detectors for small-animal imaging
Onodera et al. Temperature dependence of spectroscopic performance of thallium bromide X-and gamma-ray detectors
WO2016088640A1 (ja) 半導体結晶の製造方法、半導体放射線検出器、およびそれを用いた放射線撮像装置
Kim et al. Thallium bromide and thallium bromoiodide gamma ray spectrometer development
Jeong et al. Characteristics of a Frisch collar grid CdZnTe radiation detector grown by low-pressure Bridgman method
Oliveira et al. Gamma-ray spectroscopy for TlBr detectors at two different temperatures
Pinaroli et al. Advances in High-Z semiconductor radiation detectors at BNL

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160506

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160506

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20160609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170829

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180306