WO2009022378A1 - 放射線検出装置 - Google Patents

放射線検出装置 Download PDF

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Publication number
WO2009022378A1
WO2009022378A1 PCT/JP2007/065728 JP2007065728W WO2009022378A1 WO 2009022378 A1 WO2009022378 A1 WO 2009022378A1 JP 2007065728 W JP2007065728 W JP 2007065728W WO 2009022378 A1 WO2009022378 A1 WO 2009022378A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor substrate
radiation detector
rays
metal film
Prior art date
Application number
PCT/JP2007/065728
Other languages
English (en)
French (fr)
Inventor
Hideharu Matsuura
Original Assignee
Osaka Electro-Communication University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Electro-Communication University filed Critical Osaka Electro-Communication University
Priority to US12/665,485 priority Critical patent/US20100163740A1/en
Priority to PCT/JP2007/065728 priority patent/WO2009022378A1/ja
Priority to JP2008558134A priority patent/JPWO2009022378A1/ja
Publication of WO2009022378A1 publication Critical patent/WO2009022378A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

　放射線検出装置を提供する。 　半導体基板１は、ＳｉＣの結晶である。半導体基板１の一方の面には、所要の面積を有しＸ線の入射面としての金属膜２を形成してある。半導体基板１の他方の面の中央部には、円形状の電極３を形成し、電極３を囲むように半導体基板１の外周付近に環状の電極４を形成してある。金属膜２及び環状の電極４には、所定の直流電圧Ｖｄ（例えば、－１００Ｖ～－１０００Ｖ程度）を印加する。電極３は、接地レベルの電圧を印加してある。金属膜２に入射したＸ線（γ線）により半導体基板１内で電子・正孔の対が生成される。生成された電子は電極３に集められ出力端子から電気信号として取り出される。
PCT/JP2007/065728 2007-08-10 2007-08-10 放射線検出装置 WO2009022378A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/665,485 US20100163740A1 (en) 2007-08-10 2007-08-10 Radiation detection apparatus
PCT/JP2007/065728 WO2009022378A1 (ja) 2007-08-10 2007-08-10 放射線検出装置
JP2008558134A JPWO2009022378A1 (ja) 2007-08-10 2007-08-10 放射線検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065728 WO2009022378A1 (ja) 2007-08-10 2007-08-10 放射線検出装置

Publications (1)

Publication Number Publication Date
WO2009022378A1 true WO2009022378A1 (ja) 2009-02-19

Family

ID=40350442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065728 WO2009022378A1 (ja) 2007-08-10 2007-08-10 放射線検出装置

Country Status (3)

Country Link
US (1) US20100163740A1 (ja)
JP (1) JPWO2009022378A1 (ja)
WO (1) WO2009022378A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010140944A1 (en) * 2009-06-05 2010-12-09 Rti Electronics Ab X-ray detection device
JP2014145705A (ja) * 2013-01-30 2014-08-14 Japan Atomic Energy Agency 炭化ケイ素放射線検出器の特性回復方法及びその運転方法
JP2015072201A (ja) * 2013-10-03 2015-04-16 日立アロカメディカル株式会社 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698091B2 (en) 2009-06-10 2014-04-15 Moxtek, Inc. Semiconductor MOS entrance window for radiation detectors
US8314468B2 (en) * 2009-06-10 2012-11-20 Moxtek, Inc. Variable ring width SDD
KR102116321B1 (ko) * 2013-12-04 2020-05-28 주식회사 레이언스 엑스선 디텍터 및 이를 이용한 엑스선 영상장치와 이의 구동방법
US20160216384A1 (en) * 2015-01-26 2016-07-28 Brimrose Technology Corporation Detection of nuclear radiation via mercurous halides
WO2016143020A1 (ja) * 2015-03-09 2016-09-15 株式会社日立製作所 放射線検出器およびそれを用いた放射線検出装置
ITUB20159644A1 (it) * 2015-12-24 2017-06-24 Horiba Ltd Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione.
CN106997908B (zh) * 2016-01-22 2021-05-25 中国科学院物理研究所 可见盲紫外光探测器单元及阵列
CN106997913B (zh) * 2016-01-22 2021-05-25 中国科学院物理研究所 日盲紫外光探测器单元及阵列
CN112083470B (zh) * 2020-09-02 2023-11-24 重庆中易智芯科技有限责任公司 一种阻态敏感CdZnTe辐射探测器及其制造方法
CN113391339B (zh) * 2021-07-13 2024-01-12 陕西迪泰克新材料有限公司 一种辐射剂量监测装置及其监测方法和制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2003294845A (ja) * 2002-04-02 2003-10-15 Hitachi Ltd 放射線検出器及び放射線検査装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0179828B1 (de) * 1984-04-25 1989-07-19 KEMMER, Josef, Dr. Grossflächiger halbleiterstrahlungsdetektor niedriger kapazität
JPH04292499A (ja) * 1991-03-22 1992-10-16 Sharp Corp 炭化珪素単結晶の製造方法
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6046454A (en) * 1995-10-13 2000-04-04 Digirad Corporation Semiconductor radiation detector with enhanced charge collection
JP4225531B2 (ja) * 2001-02-07 2009-02-18 京セミ株式会社 放射線検出器および放射線検出素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2003294845A (ja) * 2002-04-02 2003-10-15 Hitachi Ltd 放射線検出器及び放射線検査装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010140944A1 (en) * 2009-06-05 2010-12-09 Rti Electronics Ab X-ray detection device
US8829453B2 (en) 2009-06-05 2014-09-09 Rti Electronics Ab X-ray detection device
JP2014145705A (ja) * 2013-01-30 2014-08-14 Japan Atomic Energy Agency 炭化ケイ素放射線検出器の特性回復方法及びその運転方法
JP2015072201A (ja) * 2013-10-03 2015-04-16 日立アロカメディカル株式会社 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法

Also Published As

Publication number Publication date
US20100163740A1 (en) 2010-07-01
JPWO2009022378A1 (ja) 2010-11-11

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