JP2015056572A - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same Download PDF

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JP2015056572A
JP2015056572A JP2013190138A JP2013190138A JP2015056572A JP 2015056572 A JP2015056572 A JP 2015056572A JP 2013190138 A JP2013190138 A JP 2013190138A JP 2013190138 A JP2013190138 A JP 2013190138A JP 2015056572 A JP2015056572 A JP 2015056572A
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semiconductor element
resin film
semiconductor device
film layer
mounting substrate
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JP6223085B2 (en
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博之 倉田
Hiroyuki Kurata
博之 倉田
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New Japan Radio Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method, which can simply form a hollow structure even in a semiconductor device having a structure of connecting a semiconductor element and a mounting substrate with a metal wire.SOLUTION: A semiconductor device manufacturing method comprises the steps of: mounting a plurality of semiconductor elements 2 on a mounting substrate 1 and forming electrical connection from electrodes formed on a surface of the mounting substrate 1 by metal wires 13; subsequently covering the mounting substrate surface by a resin film layer 4 so as to include a gas in surfaces of the semiconductor elements and adhere tightly to the mounting substrate surface among adjacent semiconductor elements; curing an encapsulation resin including the resin film layer after inflating the gas remaining in the semiconductor element surfaces or while inflating the gas to form a hollow part including a gas with pressure lower than atmospheric pressure between each semiconductor element surface and the resin film; and finally, performing singulation into individual semiconductor devices.

Description

本発明は、半導体装置およびその製造方法に関し、特に表面弾性波フィルタやＭＥＭＳ等で使用される半導体素子表面上を空洞化した中空構造を備えた半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device having a hollow structure in which a surface of a semiconductor element used in a surface acoustic wave filter, a MEMS, or the like is hollowed, and a manufacturing method thereof.

表面弾性波（ＳＡＷ）フィルタやＭＥＭＳ（Micro Electro Mechanical Systems）素子など半導体素子表面でメカニカルな動作が必要な半導体装置では、半導体素子表面を空洞化させた中空パッケージが使用されている。この種の中空パッケージでは、金属キャップにより封止する構造のものや樹脂を用いて封止する構造のものが種々提案されている（例えば特許文献１）。このうち、樹脂を用いて封止する構造の中空パッケージは、薄型化や低コストである点から利点が大きい。   In a semiconductor device that requires a mechanical operation on the surface of a semiconductor element such as a surface acoustic wave (SAW) filter or a micro electro mechanical systems (MEMS) element, a hollow package in which the surface of the semiconductor element is hollowed is used. Various types of hollow packages of this type have been proposed that have a structure of sealing with a metal cap and a structure of sealing with a resin (for example, Patent Document 1). Among these, a hollow package having a structure sealed with a resin is advantageous in that it is thin and low in cost.

図３および図４は、この種の樹脂を用いて封止する中空構造を備えた半導体装置の製造工程の一例を示している。所定の配線パターン（図示せず）が形成された実装基板１上に、半導体素子２がバンプ電極３を介してフリップチップ実装されている。ここで、メカニカルな動作が必要な半導体素子表面を、実装基板１側に向けて配置している（図３ａ）。   3 and 4 show an example of a manufacturing process of a semiconductor device having a hollow structure that is sealed using this type of resin. A semiconductor element 2 is flip-chip mounted via a bump electrode 3 on a mounting substrate 1 on which a predetermined wiring pattern (not shown) is formed. Here, the surface of the semiconductor element that requires mechanical operation is arranged toward the mounting substrate 1 side (FIG. 3a).

次に半導体素子２を樹脂フィルム層４で覆うため、樹脂フィルム貼り付け用下型５と樹脂フィルム貼り付け用上型６との間に、半導体素子２を実装した実装基板１と樹脂フィルム層４を配置する（図３ｂ）。樹脂フィルム貼り付け用下型５および樹脂貼り付け用上型６には、それぞれ貫通孔７が形成されている。   Next, in order to cover the semiconductor element 2 with the resin film layer 4, the mounting substrate 1 and the resin film layer 4 on which the semiconductor element 2 is mounted between the lower mold 5 for attaching the resin film and the upper mold 6 for attaching the resin film. (Fig. 3b). A through hole 7 is formed in each of the lower mold 5 for resin film application and the upper mold 6 for resin application.

樹脂フィルム貼り付け用下型５と樹脂フィルム貼り付け用上型６とを接合させ、伸縮性のある樹脂フィルム層４と半導体素子２との間に残る空気を樹脂フィルム貼り付け用下型５に形成された貫通孔７を通して排出することで、樹脂フィルム層４が半導体素子２表面に沿って密着する。樹脂フィルム貼り付け用上型６の貫通孔７からキャビティ８内に圧力を加えることで、密着性を更に増すこともできる（図３ｃ）。   The lower mold 5 for adhering the resin film and the upper mold 6 for adhering the resin film are joined, and the air remaining between the elastic resin film layer 4 and the semiconductor element 2 is transferred to the lower mold 5 for adhering the resin film. By discharging through the formed through-hole 7, the resin film layer 4 adheres along the surface of the semiconductor element 2. The adhesion can be further increased by applying pressure from the through hole 7 of the upper die 6 for attaching the resin film into the cavity 8 (FIG. 3c).

その後、半導体素子２に密着した樹脂フィルム層４に紫外線を照射させたり、熱を加えることで硬化させる（図３ｄ）。   Thereafter, the resin film layer 4 adhered to the semiconductor element 2 is cured by irradiating with ultraviolet rays or applying heat (FIG. 3d).

その後樹脂封止を行うため、樹脂封止用下型９と樹脂封止用上型１０との間に形成されるキャビティ１１内に、半導体素子２を実装し、その表面を樹脂フィルム層４で被覆した実装基板１を載置して、封止樹脂を注入する。このとき樹脂フィルム層４によって半導体素子２表面に封止樹脂が流入することはない。その後、注入した封止樹脂を硬化させることで、樹脂フィルム層４上に封止樹脂１２が形成される（図４ａ）。   Thereafter, in order to perform resin sealing, the semiconductor element 2 is mounted in the cavity 11 formed between the lower mold 9 for resin sealing and the upper mold 10 for resin sealing, and the surface thereof is covered with the resin film layer 4. The coated mounting substrate 1 is placed and a sealing resin is injected. At this time, the sealing resin does not flow into the surface of the semiconductor element 2 by the resin film layer 4. Then, the sealing resin 12 is formed on the resin film layer 4 by curing the injected sealing resin (FIG. 4a).

樹脂封止用下型９および樹脂封止用上型１０を取り外し（図４ｂ）、封止樹脂１２，樹脂フィルム層４および実装基板１を切断して個片化することで、中空構造を備えた半導体装置を形成することができる（図４ｃ）。   The lower mold 9 for resin sealing and the upper mold 10 for resin sealing are removed (FIG. 4 b), and the sealing resin 12, the resin film layer 4, and the mounting substrate 1 are cut into individual pieces to provide a hollow structure. A semiconductor device can be formed (FIG. 4c).

ところで、樹脂フィルム層４を半導体素子２表面および実装基板１上に密着させる際、伸縮性のある樹脂フィルム層４が伸びて半導体素子２表面に沿って密着するため、図３および図４に示すようにバンプ電極により接続するのが好ましい。半導体素子２と実装基板１とを金属ワイヤで接続している場合には、樹脂フィルム層４の伸縮によって、半導体素子２の表面に、樹脂フィルム層４が接してしまい、中空構造が形成できないためである。   By the way, when the resin film layer 4 is brought into close contact with the surface of the semiconductor element 2 and the mounting substrate 1, the stretchable resin film layer 4 extends and adheres along the surface of the semiconductor element 2. Thus, it is preferable to connect by a bump electrode. When the semiconductor element 2 and the mounting substrate 1 are connected by a metal wire, the resin film layer 4 comes into contact with the surface of the semiconductor element 2 due to expansion and contraction of the resin film layer 4, so that a hollow structure cannot be formed. It is.

特開２００５−３０２８３５号公報JP 2005-302835 A

従来の中空構造を備えた半導体装置の製造方法では、金属ワイヤで半導体素子と実装基板とを接続する構造の半導体装置には採用することができなかった。本発明は、金属ワイヤで半導体素子と実装基板を接続する構造の半導体装置であっても、簡便に中空構造を形成することができる半導体装置およびその製造方法を提供することを目的とする。   The conventional method for manufacturing a semiconductor device having a hollow structure cannot be employed in a semiconductor device having a structure in which a semiconductor element and a mounting substrate are connected by a metal wire. An object of the present invention is to provide a semiconductor device that can easily form a hollow structure, and a method of manufacturing the same, even if the semiconductor device has a structure in which a semiconductor element and a mounting substrate are connected by a metal wire.

上記目的を達成するため、本願請求項１に係る発明は、半導体素子表面に形成された電極から金属ワイヤにより電気的な接続が形成されているとともに、前記半導体素子表面と封止樹脂との間に中空部が形成されている半導体装置において、前記中空部は、大気圧より低い圧力の気体が内包されていることを特徴とする。   In order to achieve the above object, according to the first aspect of the present invention, an electrical connection is formed by a metal wire from an electrode formed on the surface of a semiconductor element, and between the surface of the semiconductor element and a sealing resin. In the semiconductor device in which a hollow portion is formed, a gas having a pressure lower than atmospheric pressure is included in the hollow portion.

本願請求項２に係る発明は、請求項１記載の半導体装置において、前記中空部は、少なくとも樹脂フィルム層を含む封止樹脂によって封止されていることを特徴とする。   According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the hollow portion is sealed with a sealing resin including at least a resin film layer.

本願請求項３に係る発明は、半導体素子表面に形成された電極から金属ワイヤによって電気的な接続が形成されているとともに、前記半導体素子表面と封止樹脂との間に中空部が形成されている半導体装置の製造方法において、実装基板上に複数の半導体素子を実装し、該半導体素子表面に形成された電極から金属ワイヤにより電気的な接続を形成する工程と、前記半導体素子表面に気体を内包し、隣接する半導体素子間の前記実装基板表面に密着するように、樹脂フィルム層で前記実装基板表面を被覆する工程と、前記半導体素子表面に残る気体を膨張させた後、あるいは膨張させながら、少なくとも前記樹脂フィルム層を含む封止樹脂を硬化させ、前記半導体素子表面と前記樹脂フィルム層との間に、大気圧より低い圧力の前記気体が内包する中空部を形成する工程と、個々の半導体装置に個片化する工程とを備えたことを特徴とする。   In the invention according to claim 3 of the present invention, the electrical connection is formed by the metal wire from the electrode formed on the surface of the semiconductor element, and the hollow portion is formed between the surface of the semiconductor element and the sealing resin. In the method of manufacturing a semiconductor device, a step of mounting a plurality of semiconductor elements on a mounting substrate and forming an electrical connection by a metal wire from an electrode formed on the surface of the semiconductor element; and a gas on the surface of the semiconductor element Encapsulating and mounting the surface of the mounting substrate with a resin film layer so as to be in close contact with the surface of the mounting substrate between adjacent semiconductor elements, and after expanding or expanding the gas remaining on the surface of the semiconductor element And at least the sealing resin including the resin film layer is cured, and the gas having a pressure lower than atmospheric pressure is contained between the semiconductor element surface and the resin film layer. Forming a hollow portion which is characterized by comprising the step of singulating the individual semiconductor devices.

本願請求項４に係る発明は、請求項３記載の半導体装置の製造方法において、前記中空部を形成する工程は、前記実装基板表面を被覆した前記樹脂フィルム層上に液状樹脂を塗布する工程と、前記半導体素子表面に残る気体を膨張させた後、あるいは膨張させながら、前記樹脂フィルム層および前記液状樹脂を硬化させ、前記半導体素子表面と前記樹脂フィルム層および前記液状樹脂が硬化した封止樹素の前記樹脂フィルム層との間に、大気圧より低い圧力の前記気体が内包する中空部を形成する工程を含むことを特徴とする。   According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the third aspect, the step of forming the hollow portion includes a step of applying a liquid resin on the resin film layer covering the surface of the mounting substrate. After the gas remaining on the surface of the semiconductor element is expanded or expanded, the resin film layer and the liquid resin are cured, and the semiconductor element surface, the resin film layer, and the liquid resin are cured. The method includes a step of forming a hollow portion containing the gas having a pressure lower than atmospheric pressure between the elemental resin film layer.

本願請求項５に係る発明は、請求項３又は請求項４いずれか記載の半導体装置の製造方法において、前記半導体素子表面に残る気体を膨張させる工程は、前記実装基板を密閉容器内に載置し、前記密閉容器内を減圧させることで、前記半導体素子表面に残る気体を膨張させる工程であることを特徴とする。   The invention according to claim 5 of the present application is the method of manufacturing a semiconductor device according to claim 3 or claim 4, wherein the step of expanding the gas remaining on the surface of the semiconductor element is configured by placing the mounting substrate in an airtight container. And it is the process of expanding the gas which remains on the said semiconductor element surface by decompressing the inside of the said airtight container, It is characterized by the above-mentioned.

本発明の半導体装置は、金属ワイヤによって接続された半導体素子表面に中空構造を備える構造となっているため、半導体素子や半導体装置を実装する基板を変更することなく、製造コストを抑えながら、中空構造を形成することができる。   Since the semiconductor device of the present invention has a structure having a hollow structure on the surface of the semiconductor element connected by the metal wire, the semiconductor device is hollow while suppressing the manufacturing cost without changing the semiconductor element and the substrate on which the semiconductor device is mounted. A structure can be formed.

また半導体装置が高周波デバイスの場合、信号配線と半導体素子表面が対向すると高周波特性に影響があり、フリップチップ実装が好ましくない場合があるが、本発明のように金属ワイヤにより接続する構造とすると信号配線と半導体素子表面が対向する構造を避けることができ、高周波デバイスの特性に影響を与えることなく中空構造を形成することができる。   When the semiconductor device is a high-frequency device, if the signal wiring and the surface of the semiconductor element face each other, the high-frequency characteristics are affected, and flip chip mounting may not be preferable. A structure in which the wiring and the surface of the semiconductor element face each other can be avoided, and a hollow structure can be formed without affecting the characteristics of the high-frequency device.

また本発明の半導体装置は、中空構造内の圧力が大気圧より低くなるため、中空構造の内壁が内側に引き寄せられる圧力が加わるため、実装基板と樹脂フィルム層との接着を密に保つことが可能となる。   In the semiconductor device of the present invention, since the pressure in the hollow structure is lower than the atmospheric pressure, the pressure applied to the inner wall of the hollow structure is attracted to the inside, so that the adhesion between the mounting substrate and the resin film layer can be kept tight. It becomes possible.

また、本発明の半導体装置の製造方法は、通常の半導体装置の製造工程に、減圧のための密閉容器を用意するだけでよいため、通常の半導体装置の製造方法同様、歩留まり良く製造することができるという利点がある。   In addition, since the semiconductor device manufacturing method of the present invention only needs to prepare a sealed container for decompression in a normal semiconductor device manufacturing process, it can be manufactured with a high yield as in a normal semiconductor device manufacturing method. There is an advantage that you can.

本発明の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device of this invention. 従来のこの種の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of this kind of conventional semiconductor device. 従来のこの種の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of this kind of conventional semiconductor device.

本発明の半導体装置の製造方法は、樹脂フィルム層で半導体素子を被覆する際、樹脂フィルム層内に気体を残したままとしておき、その後、残った気体を膨張させ、この状態で封止樹脂を硬化させることで、中空構造を形成することを特徴としている。以下、本発明の実施例について詳細に説明する。   In the method for manufacturing a semiconductor device of the present invention, when a semiconductor element is coated with a resin film layer, the gas is left in the resin film layer, and then the remaining gas is expanded, and the sealing resin is expanded in this state. It is characterized by forming a hollow structure by curing. Examples of the present invention will be described in detail below.

所定の配線パターン（図示せず）が形成された実装基板１上に、半導体素子２を実装する。半導体素子２と実装基板１上の配線パターンは、金属ワイヤ１３によって接続されている。メカニカルな動作が必要な半導体素子表面は、上面側に向けて配置している（図１ａ）。ここで、金属ワイヤ１３を半導体素子２の周囲四方向に配置したり、金属ワイヤ１３の数を増やしたり、あるいは金属ワイヤ１３間の間隔を狭くすると、半導体素子２表面に空気が残りやすくなる。   The semiconductor element 2 is mounted on the mounting substrate 1 on which a predetermined wiring pattern (not shown) is formed. The semiconductor element 2 and the wiring pattern on the mounting substrate 1 are connected by a metal wire 13. The surface of the semiconductor element that requires mechanical operation is arranged toward the upper surface side (FIG. 1a). Here, if the metal wires 13 are arranged in four directions around the semiconductor element 2, the number of the metal wires 13 is increased, or the interval between the metal wires 13 is narrowed, air tends to remain on the surface of the semiconductor element 2.

半導体素子２を樹脂フィルム層４で覆うため、従来例同様、樹脂フィルム貼り付け用下型５と樹脂フィルム貼り付け用上型６との間に、半導体素子２を実装した実装基板１と樹脂フィルム層４を配置する（図１ｂ）。樹脂フィルム貼り付け用下型５および樹脂貼り付け用上型６には、それぞれ貫通孔７が形成されている。ここで、樹脂フォルム層４は、例えば、２５℃における弾性率が５８０Ｍｐａ程度の柔らかさで、伸びる材料を使用する。   Since the semiconductor element 2 is covered with the resin film layer 4, the mounting substrate 1 and the resin film on which the semiconductor element 2 is mounted between the lower mold 5 for attaching the resin film and the upper mold 6 for attaching the resin film, as in the conventional example. Layer 4 is placed (FIG. 1b). A through hole 7 is formed in each of the lower mold 5 for resin film application and the upper mold 6 for resin application. Here, the resin form layer 4 is made of, for example, a material that has a modulus of elasticity of about 580 Mpa at 25 ° C. and extends.

樹脂フィルム貼り付け用下型５と樹脂フィルム貼り付け用上型６とを接合させ、樹脂フィルム層４と半導体素子２との間に残る空気を樹脂フィルム貼り付け用下型５に形成された貫通孔７を通して排出することで、樹脂フィルム層４が実装基板１と密着する（図１ｃ）。ここで、樹脂フィルム層４と半導体素子２表面との間には空気１４が残り、金属ワイヤ１３を押しつぶしたり、半導体素子２表面の電極と金属ワイヤ１３の接合が破断することがないように、吸引時間、吸引圧力、温度を調整する。通常は、樹脂フィルム貼り付け用下型５の貫通孔７から吸引を開始すると樹脂フィルム層４は実装基板１と密着するので、樹脂フィルム層４と実装基板１が密着し半導体素子２表面に空気１４が残った状態で、吸引を停止すればよい。また、樹脂フィルム貼り付け用上型６に形成された貫通孔７から、樹脂フィルム貼り付け用上型６と樹脂フィルム層４との間の空気を吸引すると、樹脂フィルム層４と半導体素子２との間に残る空気１４が、半導体素子２表面付近に集まるとともに、樹脂フィルム層４と実装基板１とが完全に密着する。   The lower mold 5 for attaching the resin film and the upper mold 6 for attaching the resin film are joined, and the air remaining between the resin film layer 4 and the semiconductor element 2 is formed in the lower mold 5 for attaching the resin film. By discharging through the hole 7, the resin film layer 4 comes into close contact with the mounting substrate 1 (FIG. 1 c). Here, air 14 remains between the resin film layer 4 and the surface of the semiconductor element 2 so that the metal wire 13 is not crushed or the bonding between the electrode on the surface of the semiconductor element 2 and the metal wire 13 is not broken. Adjust the suction time, suction pressure, and temperature. Normally, when suction is started from the through-hole 7 of the lower mold 5 for attaching the resin film, the resin film layer 4 comes into close contact with the mounting substrate 1. Suction may be stopped with 14 remaining. Moreover, when air between the upper mold 6 for resin film application and the resin film layer 4 is sucked from the through hole 7 formed in the upper mold 6 for resin film application, the resin film layer 4 and the semiconductor element 2 The air 14 remaining between them gathers in the vicinity of the surface of the semiconductor element 2 and the resin film layer 4 and the mounting substrate 1 are completely adhered to each other.

実装基板１上に実装された半導体素子２を被覆した樹脂フィルム層４上に封止樹脂１２を塗布する。この封止樹脂１２の塗布は、実装基板１の周囲にダム部を形成し、その内側に液状樹脂を滴下すればよい（図２ａ）。封止樹脂１２は、液状樹脂に限らず、別の樹脂フィルム層を積層することも可能であるが、金属ワイヤ１３に過剰な力が加わらないようにする必要がある。   A sealing resin 12 is applied on the resin film layer 4 covering the semiconductor element 2 mounted on the mounting substrate 1. The sealing resin 12 may be applied by forming a dam portion around the mounting substrate 1 and dropping a liquid resin inside the dam portion (FIG. 2a). The sealing resin 12 is not limited to a liquid resin, but another resin film layer can be laminated, but it is necessary to prevent excessive force from being applied to the metal wire 13.

次に、封止樹脂１２を硬化させる前に、実装基板１を減圧容器１５中に入れ、減圧容器１５に形成された貫通孔７から、減圧容器７内の空気を排出する。封止樹脂１２は硬化前で流動性に富んだ状態であるので、図２（ｂ）に示すように、内部に含まれる空気１４が膨張する。なお、樹脂フィルム層４は、硬化後であっても柔らかく伸びるため、空気１４が膨張する。この状態で封止樹脂１２を加熱し、あるいは紫外線を照射することにより、封止樹脂１２を硬化させる。この硬化によって、空気１４は膨張した状態で残り、中空構造を形成することができる。ここで減圧の結果、封止樹脂の１２の表面が盛り上がるように変形することもあるが、半導体素子の表面が平坦である方が好ましい場合は、更に表面に封止樹脂１２を塗布して平坦化し、再度硬化する工程を加えればよい。また表面を研磨して平坦化してもよい。   Next, before the sealing resin 12 is cured, the mounting substrate 1 is placed in the decompression container 15, and the air in the decompression container 7 is discharged from the through hole 7 formed in the decompression container 15. Since the sealing resin 12 is rich in fluidity before being cured, the air 14 contained therein expands as shown in FIG. In addition, since the resin film layer 4 expands softly even after being cured, the air 14 expands. In this state, the sealing resin 12 is cured by heating or irradiating ultraviolet rays. By this curing, the air 14 remains in an expanded state, and a hollow structure can be formed. Here, as a result of the reduced pressure, the surface of the sealing resin 12 may be deformed so that it rises. However, if it is preferable that the surface of the semiconductor element is flat, the surface is further flattened by applying the sealing resin 12 to the surface. And a step of curing again may be added. Further, the surface may be polished and flattened.

その後、封止樹脂１２、樹脂フィルム層４および実装基板１を、例えばダイシングソーを用いて切断することで個片化し、中空構造を備えた半導体装置を形成することができる（図２ｃ）。   Thereafter, the sealing resin 12, the resin film layer 4 and the mounting substrate 1 are cut into pieces by cutting with a dicing saw, for example, and a semiconductor device having a hollow structure can be formed (FIG. 2c).

以上説明したように、半導体素子２と実装基板１を金属ワイヤ１３で接続する構造の半導体装置であっても、中空構造を簡便に形成することが可能となる。   As described above, even in a semiconductor device having a structure in which the semiconductor element 2 and the mounting substrate 1 are connected by the metal wire 13, a hollow structure can be easily formed.

なお、上記説明では中空構造内に残る気体が空気として説明したが、樹脂フィルム層４で半導体素子２を被覆する際の雰囲気ガスが空気以外の気体であれば、中空構造内に残る気体は、その雰囲気ガスとなる。   In the above description, the gas remaining in the hollow structure has been described as air. However, if the atmosphere gas when covering the semiconductor element 2 with the resin film layer 4 is a gas other than air, the gas remaining in the hollow structure is: It becomes the atmosphere gas.

１：実装基板、２：半導体素子、３：バンプ電極、４：樹脂フィルム層、５：樹脂フィルム貼り付け用下型、６：樹脂フィルム貼り付け用上型、７：貫通孔、８：キャビティ、９：樹脂封止用下型、10：樹脂封止用上型、11：キャビティ、12：封止樹脂、１３：金属ワイヤ、１４：空気、１５：減圧容器 1: mounting substrate, 2: semiconductor element, 3: bump electrode, 4: resin film layer, 5: lower mold for pasting resin film, 6: upper mold for pasting resin film, 7: through hole, 8: cavity, 9: Lower mold for resin sealing, 10: Upper mold for resin sealing, 11: Cavity, 12: Sealing resin, 13: Metal wire, 14: Air, 15: Depressurized container

Claims (5)

半導体素子表面に形成された電極から金属ワイヤにより電気的な接続が形成されているとともに、前記半導体素子表面と封止樹脂との間に中空部が形成されている半導体装置において、
前記中空部は、大気圧より低い圧力の気体が内包されていることを特徴とする半導体装置。 In the semiconductor device in which an electrical connection is formed by a metal wire from the electrode formed on the surface of the semiconductor element, and a hollow portion is formed between the surface of the semiconductor element and the sealing resin,
The semiconductor device, wherein the hollow portion contains a gas having a pressure lower than atmospheric pressure. 請求項１記載の半導体装置において、前記中空部は、少なくとも樹脂フィルム層を含む封止樹脂によって封止されていることを特徴とする半導体装置。   The semiconductor device according to claim 1, wherein the hollow portion is sealed with a sealing resin including at least a resin film layer. 半導体素子表面に形成された電極から金属ワイヤによって電気的な接続が形成されているとともに、前記半導体素子表面と封止樹脂との間に中空部が形成されている半導体装置の製造方法において、
実装基板上に複数の半導体素子を実装し、該半導体素子表面に形成された電極から金属ワイヤにより電気的な接続を形成する工程と、
前記半導体素子表面に気体を内包し、隣接する半導体素子間の前記実装基板表面に密着するように、樹脂フィルム層で前記実装基板表面を被覆する工程と、
前記半導体素子表面に残る気体を膨張させた後、あるいは膨張させながら、少なくとも前記樹脂フィルム層を含む封止樹脂を硬化させ、前記半導体素子表面と前記樹脂フィルム層との間に、大気圧より低い圧力の前記気体が内包する中空部を形成する工程と、
個々の半導体装置に個片化する工程とを備えたことを特徴とする半導体装置の製造方法。 In the method for manufacturing a semiconductor device in which an electrical connection is formed by a metal wire from an electrode formed on the surface of the semiconductor element, and a hollow portion is formed between the surface of the semiconductor element and the sealing resin,
Mounting a plurality of semiconductor elements on a mounting substrate, and forming an electrical connection with a metal wire from an electrode formed on the surface of the semiconductor element;
A step of covering the mounting substrate surface with a resin film layer so as to enclose a gas in the surface of the semiconductor element and closely adhere to the mounting substrate surface between adjacent semiconductor elements;
After the gas remaining on the surface of the semiconductor element is expanded or expanded, the sealing resin including at least the resin film layer is cured, and is lower than atmospheric pressure between the semiconductor element surface and the resin film layer. Forming a hollow portion enclosing the gas of pressure;
A method of manufacturing a semiconductor device, comprising: a step of dividing each semiconductor device into individual pieces. 請求項３記載の半導体装置の製造方法において、前記中空部を形成する工程は、
前記実装基板表面を被覆した前記樹脂フィルム層上に液状樹脂を塗布する工程と、
前記半導体素子表面に残る気体を膨張させた後、あるいは膨張させながら、前記樹脂フィルム層および前記液状樹脂を硬化させ、前記半導体素子表面と前記樹脂フィルム層および前記液状樹脂が硬化した封止樹脂の前記樹脂フィルム層との間に、大気圧より低い圧力の前記気体が内包する中空部を形成する工程を含むことを特徴とする半導体装置の製造方法。 4. The method of manufacturing a semiconductor device according to claim 3, wherein the step of forming the hollow portion includes:
Applying a liquid resin on the resin film layer covering the mounting substrate surface;
After the gas remaining on the surface of the semiconductor element is expanded or expanded, the resin film layer and the liquid resin are cured, and the semiconductor element surface, the resin film layer, and the liquid resin are cured. The manufacturing method of the semiconductor device characterized by including the process of forming the hollow part which the said gas of the pressure lower than atmospheric pressure encloses between the said resin film layers. 請求項３又は請求項４いずれか記載の半導体装置の製造方法において、
前記半導体素子表面に残る気体を膨張させる工程は、前記実装基板を密閉容器内に載置し、前記密閉容器内を減圧させることで、前記半導体素子表面に残る気体を膨張させる工程であることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device in any one of Claim 3 or Claim 4,
The step of expanding the gas remaining on the surface of the semiconductor element is a step of expanding the gas remaining on the surface of the semiconductor element by placing the mounting substrate in a sealed container and depressurizing the inside of the sealed container. A method of manufacturing a semiconductor device.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714651U (en) * 1993-05-10 1995-03-10 クラリオン株式会社 Hollow sealed package
JP2001053092A (en) * 1999-08-13 2001-02-23 Japan Radio Co Ltd Package, device and its manufacture
JP2001176995A (en) * 1999-10-15 2001-06-29 Thomson Csf Method of packaging electronic component
JP2006173280A (en) * 2004-12-14 2006-06-29 Denso Corp Semiconductor sensor
JP2007007774A (en) * 2005-06-30 2007-01-18 Toshiba Corp Package for micro-electric machine apparatus and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714651U (en) * 1993-05-10 1995-03-10 クラリオン株式会社 Hollow sealed package
JP2001053092A (en) * 1999-08-13 2001-02-23 Japan Radio Co Ltd Package, device and its manufacture
JP2001176995A (en) * 1999-10-15 2001-06-29 Thomson Csf Method of packaging electronic component
JP2006173280A (en) * 2004-12-14 2006-06-29 Denso Corp Semiconductor sensor
JP2007007774A (en) * 2005-06-30 2007-01-18 Toshiba Corp Package for micro-electric machine apparatus and manufacturing method thereof

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