JP2015053392A - 化合物半導体ナノ粒子による光吸収層の作製方法 - Google Patents
化合物半導体ナノ粒子による光吸収層の作製方法 Download PDFInfo
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- 230000031700 light absorption Effects 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title description 33
- 150000001875 compounds Chemical class 0.000 title description 17
- 239000002105 nanoparticle Substances 0.000 title description 8
- 239000012991 xanthate Substances 0.000 claims abstract description 143
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 239000002904 solvent Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012298 atmosphere Substances 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 18
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 13
- ZOOODBUHSVUZEM-UHFFFAOYSA-N ethoxymethanedithioic acid Chemical compound CCOC(S)=S ZOOODBUHSVUZEM-UHFFFAOYSA-N 0.000 claims description 129
- 239000010949 copper Substances 0.000 claims description 112
- 239000011701 zinc Substances 0.000 claims description 40
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 36
- 230000008569 process Effects 0.000 abstract description 12
- 239000011135 tin Substances 0.000 description 64
- 239000010409 thin film Substances 0.000 description 56
- 239000000203 mixture Substances 0.000 description 40
- 238000011156 evaluation Methods 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 19
- 239000011669 selenium Substances 0.000 description 18
- 239000000843 powder Substances 0.000 description 17
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 229910052717 sulfur Inorganic materials 0.000 description 12
- 238000002411 thermogravimetry Methods 0.000 description 12
- -1 Chalcopyrite compound Chemical class 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052711 selenium Inorganic materials 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 238000000935 solvent evaporation Methods 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 5
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 5
- 229910001432 tin ion Inorganic materials 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 150000003346 selenoethers Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000004729 solvothermal method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- ROOIMEGRNKABEH-UHFFFAOYSA-M copper(1+);ethoxymethanedithioate Chemical compound [Cu+].CCOC([S-])=S ROOIMEGRNKABEH-UHFFFAOYSA-M 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- JGZZEAPGGFAOAY-UHFFFAOYSA-N o-ethyl ethylsulfanylmethanethioate Chemical compound CCOC(=S)SCC JGZZEAPGGFAOAY-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 244000061520 Angelica archangelica Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 206010013496 Disturbance in attention Diseases 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical group [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PUSQPMUOFLKEIC-UHFFFAOYSA-N [S-2].[Al+3].[Cu+2] Chemical compound [S-2].[Al+3].[Cu+2] PUSQPMUOFLKEIC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical class C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- MHGONGPZRHODOR-UHFFFAOYSA-L copper;ethoxymethanedithioate Chemical compound [Cu+2].CCOC([S-])=S.CCOC([S-])=S MHGONGPZRHODOR-UHFFFAOYSA-L 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- IQYICWIZYYZVFP-UHFFFAOYSA-K ethoxymethanedithioate indium(3+) Chemical compound [In+3].CCOC([S-])=S.CCOC([S-])=S.CCOC([S-])=S IQYICWIZYYZVFP-UHFFFAOYSA-K 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-M hydrosulfide Chemical compound [SH-] RWSOTUBLDIXVET-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- JCBJVAJGLKENNC-UHFFFAOYSA-M potassium ethyl xanthate Chemical compound [K+].CCOC([S-])=S JCBJVAJGLKENNC-UHFFFAOYSA-M 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
一般式(1)
一般式(2)
一般式(3)
一般式(4)
(実施例1)
(実施例2)
(実施例3)
20 各種金属キサンテートの外観
22 Cuキサンテート
24 Znキサンテート
26 Inキサンテート
28 Snキサンテート
32 金属キサンテートの熱質量分析結果
34 CuInS2薄膜の各加熱温度における外観状態
36 CuInS2薄膜のXRD評価結果
38 CuInS2薄膜の原子組成比評価結果
40 CuInS2薄膜の成分組成比評価結果
42 Snキサンテートの熱重量分析結果
44 Cu2SnS3薄膜の各加熱温度における外観状態
46 Cu2SnS3薄膜のXRD評価結果
48 CuInS2薄膜の原子組成比評価結果
50 Cu2SnS3薄膜の成分組成比評価結果
52 Znキサンテートの熱重量分析結果
54 Cu2ZnSnS4薄膜の各加熱温度における外観状態
56 Cu2ZnSnS4薄膜のXRD評価結果
58 Cu2ZnSnS4薄膜の原子組成比評価結果
60 Cu2ZnSnS4薄膜の成分組成比評価結果
Claims (12)
- 太陽電池の光吸収層を作製する方法において、
キサンテートを配位した金属錯体を、複数混合して溶媒に溶かして溶解液とする第一工程と、
前記溶解液を電極が形成された基板に塗布する第二工程と、
基板に塗布された前記溶解液の前記溶媒を、不活性ガス雰囲気で70℃〜90℃の温度で蒸発させる第三工程と、
前記溶媒を蒸発させた後、不活性ガス雰囲気で100℃〜300℃の温度で加熱焼成する第四工程と、
から成ることを特徴とする光吸収層の作製方法。
- 請求項1に記載の光吸収層の作製方法において、
前記金属錯体の金属原子は、銅、亜鉛、インジウム、スズのいずれかであること、
を特徴とする光吸収層の作製方法。
- 請求項2に記載の光吸収層の作製方法において、
銅を原子とする金属錯体の分子式は、
一般式(1)
- 請求項2に記載の光吸収層の作製方法において、
亜鉛を原子とする金属錯体の分子式は、
一般式(2)
- 請求項2に記載の光吸収層の作製方法において、
スズを原子とする金属錯体の分子式は、
一般式(3)
- 請求項5に記載の光吸収層の作製方法において、
スズを原子とする金属錯体は、金属錯体合成後の液体状態で使用すること、
を特徴とする光吸収層の作製方法。
- 請求項2に記載の光吸収層の作製方法において、
インジウムを原子とする金属錯体の分子式は、
一般式(4)
- 請求項1に記載の光吸収層の作製方法において、
前記溶媒は、テトラヒドロフロンであること、
を特徴とする光吸収層の作製方法。
- 請求項1に記載の光吸収層の作製方法において、
前記第三工程と第四工程での不活性ガスは、窒素、ヘリウム、アルゴンであること、
を特徴とする光吸収層の作製方法。
- 請求項1に記載の光吸収層の作製方法において、
前記第三工程は、前記電極が塗布された前記基板を70℃〜90℃にしてから前記溶解液を塗布すること、
を特徴とする光吸収層の作製方法。
- 請求項1に記載の光吸収層の作製方法において、
前記第四工程は、前記第三工程での設定温度から徐々に昇温して加熱焼成温度とすること、
を特徴とする光吸収層の作製方法。
- 請求項1に記載の光吸収層の作製方法において、
前記溶解液を電極が形成された基板に塗布する第二工程と、
基板に塗布された前記溶解液の前記溶媒を、不活性ガス雰囲気で70℃〜90℃の温度で蒸発させる第三工程と、
前記溶媒を蒸発させた後、不活性ガス雰囲気で100℃〜300℃の温度で加熱焼成する第四工程と、
を複数回繰り返して膜厚を厚くすること、
を特徴とする光吸収層の作製方法。
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WO2012100139A2 (en) * | 2011-01-21 | 2012-07-26 | Regents Of The University Of Minnesota | Metal chalcogenides and methods of making and using same |
JP2012529161A (ja) * | 2009-06-02 | 2012-11-15 | イソボルタイク・アクチェンゲゼルシヤフト | ナノ粒子を含んでなる複合材料並びに四元、五元および更に高元の複合半導体ナノ粒子を含む光活性層の製造 |
JP2013544038A (ja) * | 2010-11-22 | 2013-12-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | カルコゲン含有半導体を製造するためのインク及び方法 |
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JP2012529161A (ja) * | 2009-06-02 | 2012-11-15 | イソボルタイク・アクチェンゲゼルシヤフト | ナノ粒子を含んでなる複合材料並びに四元、五元および更に高元の複合半導体ナノ粒子を含む光活性層の製造 |
JP2013544038A (ja) * | 2010-11-22 | 2013-12-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | カルコゲン含有半導体を製造するためのインク及び方法 |
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