JP2015046429A5 - - Google Patents
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- JP2015046429A5 JP2015046429A5 JP2013175569A JP2013175569A JP2015046429A5 JP 2015046429 A5 JP2015046429 A5 JP 2015046429A5 JP 2013175569 A JP2013175569 A JP 2013175569A JP 2013175569 A JP2013175569 A JP 2013175569A JP 2015046429 A5 JP2015046429 A5 JP 2015046429A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light receiving
- silicon
- electrode
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 38
- 235000012239 silicon dioxide Nutrition 0.000 claims 19
- 239000000377 silicon dioxide Substances 0.000 claims 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 230000005684 electric field Effects 0.000 claims 13
- 229910052732 germanium Inorganic materials 0.000 claims 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 4
- 238000005468 ion implantation Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 238000000206 photolithography Methods 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013175569A JP2015046429A (ja) | 2013-08-27 | 2013-08-27 | 受光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013175569A JP2015046429A (ja) | 2013-08-27 | 2013-08-27 | 受光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015046429A JP2015046429A (ja) | 2015-03-12 |
| JP2015046429A5 true JP2015046429A5 (enrdf_load_stackoverflow) | 2016-05-19 |
Family
ID=52671739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013175569A Pending JP2015046429A (ja) | 2013-08-27 | 2013-08-27 | 受光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2015046429A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3064398B1 (fr) * | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
| JP7090479B2 (ja) * | 2018-06-06 | 2022-06-24 | 富士通株式会社 | 光半導体素子及び光伝送装置 |
| CN109860315B (zh) * | 2019-02-27 | 2021-04-02 | 吉林大学 | 一种雪崩光电二极管 |
| JP7443672B2 (ja) * | 2019-04-05 | 2024-03-06 | 富士通オプティカルコンポーネンツ株式会社 | 光半導体素子及び光伝送装置 |
| EP3937262A1 (en) * | 2020-07-09 | 2022-01-12 | Imec VZW | A method for fabricating an avalanche photodiode device |
| EP3940798A1 (en) | 2020-07-13 | 2022-01-19 | Imec VZW | Avalanche photodiode device with a curved absorption region |
| US11522097B2 (en) * | 2020-10-14 | 2022-12-06 | Globalfoundries Singapore Pte. Ltd. | Diode devices and methods of forming diode devices |
| US11502215B2 (en) * | 2021-02-23 | 2022-11-15 | Hewlett Packard Enterprise Development Lp | Avalanche photodiode and an optical receiver having the same |
| CN117558779A (zh) * | 2022-08-05 | 2024-02-13 | 华为技术有限公司 | 一种光电探测器、其制备方法及光接收机 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7340709B1 (en) * | 2004-07-08 | 2008-03-04 | Luxtera, Inc. | Method of generating a geometrical rule for germanium integration within CMOS |
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2013
- 2013-08-27 JP JP2013175569A patent/JP2015046429A/ja active Pending
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