JP2015041388A - 記憶装置、及び半導体装置 - Google Patents

記憶装置、及び半導体装置 Download PDF

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Publication number
JP2015041388A
JP2015041388A JP2013170069A JP2013170069A JP2015041388A JP 2015041388 A JP2015041388 A JP 2015041388A JP 2013170069 A JP2013170069 A JP 2013170069A JP 2013170069 A JP2013170069 A JP 2013170069A JP 2015041388 A JP2015041388 A JP 2015041388A
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Japan
Prior art keywords
wiring
transistor
potential
oxide semiconductor
film
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JP2013170069A
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Japanese (ja)
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JP2015041388A5 (enExample
Inventor
小山　潤
Jun Koyama
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013170069A priority Critical patent/JP2015041388A/ja
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Publication of JP2015041388A5 publication Critical patent/JP2015041388A5/ja
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JP2013170069A 2013-08-20 2013-08-20 記憶装置、及び半導体装置 Withdrawn JP2015041388A (ja)

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JP2013170069A JP2015041388A (ja) 2013-08-20 2013-08-20 記憶装置、及び半導体装置

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JP2013170069A JP2015041388A (ja) 2013-08-20 2013-08-20 記憶装置、及び半導体装置

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JP2015041388A true JP2015041388A (ja) 2015-03-02
JP2015041388A5 JP2015041388A5 (enExample) 2016-09-23

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017068891A (ja) * 2015-09-30 2017-04-06 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP2019008852A (ja) * 2017-06-23 2019-01-17 株式会社半導体エネルギー研究所 記憶装置
WO2020109901A1 (ja) * 2018-11-26 2020-06-04 株式会社半導体エネルギー研究所 半導体装置、二次電池システム
WO2020201865A1 (ja) * 2019-03-29 2020-10-08 株式会社半導体エネルギー研究所 半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182470A (ja) * 1991-12-27 1993-07-23 Hitachi Ltd 半導体多値メモリ
JP2008262632A (ja) * 2007-04-11 2008-10-30 Elpida Memory Inc 半導体記憶装置
JP2008293605A (ja) * 2007-05-25 2008-12-04 Elpida Memory Inc 半導体記憶装置
JP2011124360A (ja) * 2009-12-10 2011-06-23 Fujifilm Corp 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JP2011155249A (ja) * 2009-12-28 2011-08-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012119048A (ja) * 2010-09-29 2012-06-21 Semiconductor Energy Lab Co Ltd 半導体メモリ装置およびその駆動方法
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置
JP2013038400A (ja) * 2011-07-08 2013-02-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2013137853A (ja) * 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182470A (ja) * 1991-12-27 1993-07-23 Hitachi Ltd 半導体多値メモリ
JP2008262632A (ja) * 2007-04-11 2008-10-30 Elpida Memory Inc 半導体記憶装置
JP2008293605A (ja) * 2007-05-25 2008-12-04 Elpida Memory Inc 半導体記憶装置
JP2011124360A (ja) * 2009-12-10 2011-06-23 Fujifilm Corp 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JP2011155249A (ja) * 2009-12-28 2011-08-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012119048A (ja) * 2010-09-29 2012-06-21 Semiconductor Energy Lab Co Ltd 半導体メモリ装置およびその駆動方法
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置
JP2013038400A (ja) * 2011-07-08 2013-02-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2013137853A (ja) * 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017068891A (ja) * 2015-09-30 2017-04-06 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP2021009750A (ja) * 2015-09-30 2021-01-28 株式会社半導体エネルギー研究所 半導体装置
JP2019008852A (ja) * 2017-06-23 2019-01-17 株式会社半導体エネルギー研究所 記憶装置
WO2020109901A1 (ja) * 2018-11-26 2020-06-04 株式会社半導体エネルギー研究所 半導体装置、二次電池システム
JPWO2020109901A1 (enExample) * 2018-11-26 2020-06-04
US12444779B2 (en) 2018-11-26 2025-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device sensor unit
WO2020201865A1 (ja) * 2019-03-29 2020-10-08 株式会社半導体エネルギー研究所 半導体装置
US11948626B2 (en) 2019-03-29 2024-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistors with silicon and metal oxide channels

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