JP2015032756A - Substrate cleaning device, and back cleaning method and cleaning mechanism of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform back cleaning of a substrate, carried into an exposure device, properly.SOLUTION: A substrate cleaning device has a substrate holding section for holding the back side of a wafer, and a cleaning mechanism 12 for cleaning the back side of the wafer held by the substrate holding section. The cleaning mechanism 12 has a brush 30 that is brought into contact with the back side of the wafer, a support member 31 provided on the surface of the brush 30 on the reverse side of the wafer, an electrode 32 provided on the surface of the support member 31 on the reverse side of the brush 30, and a power supply 34 for applying a voltage to the electrode 32.

Description

  The present invention relates to a substrate cleaning apparatus that cleans, for example, a back surface of a substrate, a substrate back surface cleaning method and a cleaning mechanism in the substrate cleaning apparatus.

  For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for coating a resist solution on a wafer to form a resist film, an exposure process for exposing the resist film to a predetermined pattern, and developing the exposed resist film A series of processing such as development processing is sequentially performed to form a predetermined resist pattern on the wafer. A series of these processes is performed by a coating and developing system that is a substrate processing system on which various processing units for processing a wafer, a transfer unit for transferring a wafer, and the like are mounted.

  Incidentally, in recent years, circuit patterns formed on a wafer have been increasingly miniaturized, and the defocus margin during exposure processing has become more severe. Along with this, it is required that the exposure apparatus does not bring particles as much as possible. In particular, if particles adhere to the back surface of the wafer during exposure, the wafer is warped by the particles, which causes defocus during exposure. Therefore, in order to minimize the amount of particles brought into the exposure apparatus, the back surface of the wafer before being carried into the exposure apparatus is cleaned by a cleaning apparatus as described in Patent Document 1, for example.

  In the cleaning device, cleaning is performed by holding the back surface of the wafer by suction and moving a brush pressed against the back surface of the wafer, for example, with the back surface of the wafer facing downward.

JP 2008-177541 A

  However, even if backside cleaning is performed, particles may remain, particularly at the outer peripheral edge of the wafer. As a result of extensive studies by the present inventors, it has been found that this is caused by the deflection of the wafer by pressing the brush.

  That is, for example, as shown in FIG. 12, the wafer W is bent by being pressed by the brush 201 at a place away from the portion held by the chuck 200, for example, and there is a gap between the brush 201 and the back surface of the wafer W. It will occur. As a result, the back surface of the wafer W cannot be properly cleaned, and the wafer W may be carried into the exposure apparatus with particles adhering to the back surface of the wafer W.

  The present invention has been made in view of such a point, and an object of the present invention is to properly clean the back surface of a substrate, particularly a substrate before being carried into an exposure apparatus.

  In order to achieve the above object, the present invention provides a substrate cleaning apparatus comprising: a substrate holding unit that holds the back surface of the substrate by suction; and a cleaning mechanism that cleans the back surface of the substrate held by the substrate holding unit. The cleaning mechanism includes a brush that is in contact with the back surface of the substrate, a support member that is provided on the surface of the brush opposite to the substrate, and an electrode that is provided on the surface of the support member opposite to the brush. And a power source for applying a voltage to the electrodes.

  According to the present invention, since the electrode is provided on the support member that supports the brush, a charge can be induced on the surface of the support member by electrostatic induction by applying a predetermined DC voltage to the electrode. . Thereby, when the brush is pressed against the substrate, the substrate is sucked by the force of the electric charge on the surface of the support member, so that the deflection of the substrate due to the pressing of the brush can be suppressed. Therefore, the contact between the substrate and the brush can be maintained, and the back surface of the substrate can be properly cleaned.

The support member may have a volume resistivity of 1 × 10 ¹⁶ Ω · cm or more.

  The support member may be ceramics.

  The brush may have conductivity.

  The power source may be capable of reversing the voltage applied to the electrode.

  A brush cleaning bath for cleaning the brush may be further provided, and the brush cleaning mechanism may include a quartz plate and another electrode provided on an upper surface of the quartz plate.

  You may have the static elimination mechanism which removes the electric charge electrically charged to the board | substrate.

  The static elimination mechanism may be a supply nozzle that supplies pure water in which carbon dioxide gas is dissolved.

  The present invention according to another aspect is a method of cleaning the back surface of a substrate using a substrate holding unit that holds the back surface of the substrate by suction and a cleaning mechanism that cleans the back surface of the substrate held by the substrate holding unit, The cleaning mechanism includes a brush in contact with the back surface of the substrate, a support member provided on a surface of the brush opposite to the substrate, an electrode provided on the surface of the support member opposite to the brush, A power source for applying a voltage to the electrode, and applying the voltage to the electrode when the brush is brought into contact with the back surface of the substrate.

The support member may have a volume resistivity of 1 × 10 ¹⁶ Ω · cm or more.

  The support member may be ceramics.

  The brush may have conductivity.

  The power source may be capable of reversing the voltage applied to the electrode.

  The substrate cleaning apparatus further includes a brush cleaning bath for cleaning the brush, and the brush cleaning mechanism includes a quartz plate and another electrode provided on an upper surface of the quartz plate, and the other electrode The brush may be cleaned by bringing the brush into contact with the quartz plate while applying a voltage to the quartz plate.

The substrate cleaning apparatus may have a static elimination mechanism that removes electric charges charged on the substrate.
The removal of the electric charge charged on the substrate by the static elimination mechanism may be performed by supplying pure water in which carbon dioxide gas is dissolved to the substrate.

  According to another aspect of the present invention, there is provided a cleaning mechanism for cleaning the back surface of the substrate by pressing against the back surface of the substrate held by the substrate holding unit, the brush contacting the back surface of the substrate, and the brush A support member provided on a surface opposite to the substrate in the substrate, an electrode provided on a surface opposite to the brush in the support member, and a power source for applying a voltage to the electrode. .

  According to the present invention, the back surface of the substrate can be properly cleaned.

It is a cross-sectional view which shows the outline of a structure of the substrate cleaning apparatus concerning this Embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the substrate cleaning apparatus concerning this Embodiment. It is explanatory drawing which shows the outline of a structure of a washing | cleaning mechanism. It is explanatory drawing which shows the outline of a structure of a brush washing bath. It is explanatory drawing which shows a mode that a wafer is delivered to a substrate cleaning apparatus. It is explanatory drawing which shows the state by which the wafer was delivered to the board | substrate cleaning apparatus. It is explanatory drawing which shows a mode that a wafer is moved to a horizontal direction within a substrate cleaning apparatus. It is explanatory drawing which shows the state which applied the positive DC voltage to the electrode of the washing | cleaning mechanism. It is explanatory drawing which shows a mode that a wafer is moved to a horizontal direction within a substrate cleaning apparatus. It is explanatory drawing which showed a mode that the outer peripheral part of a wafer was wash | cleaned with a substrate cleaning apparatus. It is explanatory drawing which showed a mode that a brush was wash | cleaned with a brush washing bath. It is explanatory drawing which shows a mode that the bending generate | occur | produced in the wafer because the brush was pressed by the wafer back surface.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the substrate cleaning apparatus 1, and FIG. 2 is a longitudinal sectional view showing the outline of the configuration of the substrate cleaning apparatus 1.

  The substrate cleaning apparatus 1 includes two suction pads 10 that horizontally hold and hold the wafer W, a spin chuck 11 that horizontally holds and holds the wafer W received from the suction pad 10, and a cleaning that cleans the back surface of the wafer W. It has a mechanism 12 and a housing 13 whose upper surface is open.

  As shown in FIG. 1, the two suction pads 10 are formed in an elongated, substantially rectangular shape, and are substantially parallel across the spin chuck 11 in plan view so that the peripheral edge of the back surface of the wafer W can be held. Is provided. Each suction pad 10 is supported by a substantially rectangular support plate 14 that is longer than the suction pad 10. Both ends of the support plate 14 are supported by a frame 15 that is movable in the horizontal and vertical directions by a drive mechanism (not shown).

  An upper cup 16 is provided on the upper surface of the frame body 15. An opening 16a having a larger diameter than the diameter of the wafer W is formed on the upper surface of the upper cup 16, and the conveyance mechanism provided outside the substrate cleaning apparatus 1 and the suction pad 10 via the opening 16a. The wafer W is transferred between them.

  As shown in FIG. 2, the spin chuck 11 is connected to a drive mechanism 21 via a shaft 20, and the spin chuck 11 is configured to be rotatable and liftable by the drive mechanism 21.

  Around the spin chuck 11, for example, three elevating pins 22 that are movable up and down by an elevating mechanism (not shown) are provided.

As shown in FIG. 3, the cleaning mechanism 12 includes a brush 30 configured by bundling a large number of resin fibers such as polyvinyl alcohol, polypropylene, and nylon, and a substantially disc-shaped support member 31 that supports the brush 30. Provided on the lower surface of the support member 31, that is, the surface opposite to the brush 30 of the support member 31, the substantially disk-shaped electrode 32 having the same diameter as the support member 31, and the lower surface of the electrode 32 are supported and formed of an insulating material And a substantially disk-shaped pedestal 33. The support member 31 is made of ceramics such as alumina or aluminum nitride. The material of the support member 31 is not limited to ceramics. For example, materials other than ceramics can be used as long as the volume resistivity is approximately 1 × 10 ¹⁶ Ω · cm or more. Even when using ceramics, it is preferable to select a material having a volume resistivity of approximately 1 × 10 ¹⁶ Ω · cm or more.

  A direct current power source 34 is electrically connected to the electrode 32, and a predetermined voltage can be applied to the electrode 32. The DC power supply 34 has a function of inverting the positive / negative polarity of the voltage applied to the electrode 32. A seal member 35 made of an insulating material is provided on the outer peripheral portions of the support member 31, the electrode 32, and the pedestal 33 so as to cover the outer peripheral end surfaces of the support member 31, the electrode 32, and the pedestal 33. The seal member 35 and the pedestal 33 can prevent the electrode 32 from being short-circuited when a voltage is applied to the electrode 32.

  A shaft 36 is provided on the lower surface of the pedestal 33. A belt 38 connected to a motor 37 is provided in the vicinity of the lower end portion of the shaft 36. Therefore, the brush 30 can be rotated through the shaft 36 by driving the belt 38 by the motor 37. Therefore, particles attached to the back surface of the wafer W can be removed by rotating the brush 30 while the upper surface of the brush 30 is pressed against the back surface of the wafer W and sliding the brush 30 on the back surface of the wafer W.

  A driving mechanism 41 is connected to the cleaning mechanism 12 via a support 40. The drive mechanism 41 is connected to the housing 13 and can move in the X direction in FIG. 1 and in the horizontal direction along the housing 13. Therefore, by moving the drive mechanism 41 in the X direction, the cleaning mechanism 12 can be moved in the X direction of FIG.

  At the tip of the support 40, a cleaning liquid nozzle 40a for supplying a cleaning liquid for washing away the particles removed by the brush 30, and a gas such as nitrogen for drying the cleaning liquid adhering to the back surface of the wafer W after cleaning are provided. A purge nozzle 40b for supplying is provided. As the cleaning liquid supplied from the cleaning liquid nozzle 40a, for example, a solution obtained by bubbling carbon dioxide (carbon dioxide) in pure water and dissolving the carbon dioxide in the pure water is used.

  Further, a brush cleaning bath 50 as a brush cleaning mechanism for cleaning the brush 30 of the cleaning mechanism 12 is provided outside the upper cup 16 on the X direction negative direction side. As shown in FIG. 4, the brush cleaning bath 50 supplies a substantially rectangular parallelepiped container 51 whose side face on the upper cup 16 side is open, a shutter 52 provided in the opening, and pure water as a cleaning liquid to the brush 30. A pure water nozzle 53 is provided. By opening the shutter 52, the cleaning mechanism 12 can enter the brush cleaning bath 50, and by closing the shutter 52, the brush cleaning bath 50 can be sealed. The ceiling 51a of the container 51 is formed of, for example, a quartz plate. Further, an electrode 54 is provided on the upper surface of the ceiling portion 51a so as to cover the entire upper surface of the ceiling portion 51a, and a power source 55 for applying a DC voltage is electrically connected to the electrode 54.

  A drain pipe 60 that discharges the cleaning liquid and an exhaust pipe 61 that forms a downward airflow in the substrate cleaning apparatus 1 and exhausts the airflow are provided at the bottom of the housing 13.

  Next, cleaning of the wafer W in the substrate cleaning apparatus 1 will be described. In cleaning the wafer W, first, as shown in FIG. 5, the wafer W is transported above the upper cup 16 by the transport mechanism 100 provided outside the substrate cleaning apparatus 1. Next, the lift pins 22 are raised, and the wafer W is transferred to the lift pins 22. At this time, the suction pad 10 stands by at a position where the upper surface thereof is higher than the upper surface of the brush 30, and the spin chuck 11 is retracted to a position lower than the upper surface of the brush 30. Thereafter, the lift pins 22 are lowered, and the wafer W is transferred to the suction pad 10 and sucked and held as shown in FIG.

  Next, as shown in FIG. 7, in a state where the wafer W is sucked and held by the suction pad 10, the frame body 15 is moved in the horizontal direction so that, for example, the brush 30 is located in a region corresponding to the center portion of the back surface of the wafer W Let Next, a DC voltage having a predetermined voltage is applied to the electrode 32 by the DC power source 34. Thereafter, the suction pad 10 is lowered, the back surface of the wafer W is pressed against the upper surface of the brush 30, and the vicinity of the center portion of the wafer W is cleaned. At this time, when a positive voltage is applied to the electrode 32, for example, as shown in FIG. 8, for example, charge movement occurs inside the support member 31 made of a slightly conductive ceramic material. The negative charge moves to the side opposite to the electrode 32, that is, the wafer W side. Then, when the wafer W side of the support member 31 is charged with a positive charge, a negative charge moves to the surface of the wafer W on the brush 30 side due to electrostatic induction. As a result, the wafer W and the support member 31 are separated from each other. Attraction is generated by the Coulomb force, that is, an attractive force is generated between the wafer W and the support member 31. Therefore, even when the brush 30 is pressed against the back surface of the wafer W, the deflection of the wafer W due to being pressed by the brush 30 is minimized, and the brush 30 can be properly brought into contact with the back surface of the wafer W.

  Next, the cleaning liquid is supplied from the cleaning liquid nozzle 40a and the brush 30 is rotated to clean the central portion of the back surface of the wafer W. At this time, the support 40 reciprocates in the X direction in FIG. 1 and the frame 15 reciprocates in the Y direction, so that the central portion of the back surface of the wafer W is uniformly cleaned. At this time, since the cleaning liquid supplied from the cleaning liquid nozzle 40a uses pure water in which carbon dioxide gas is dissolved, the charge of the wafer W charged by electrostatic induction can be removed. As a result, for example, particles adhering to the back surface of the wafer W can be easily washed away by Coulomb force. Further, even when the particles themselves are charged, the particles can be neutralized, so that the back surface of the wafer W can be efficiently cleaned. In such a case, the cleaning liquid nozzle 40a functions as a static elimination mechanism that neutralizes the wafer W. Note that the method of removing the charge from the wafer W is not limited to the present embodiment, and the purge nozzle 40b may be used as an ionizer that supplies ionized air, for example.

  When the cleaning of the central portion of the rear surface of the wafer W is completed, the frame body 15 is moved in the horizontal direction so that the center of the wafer W and the center of the spin chuck 11 coincide in plan view as shown in FIG. Next, the spin chuck 11 is raised, and the wafer W is transferred from the suction pad 10 to the spin chuck 11.

  Thereafter, as shown in FIG. 10, the wafer W is rotated while the brush 30 is pressed against the back surface of the wafer W, and the back surface of the wafer W is slid in the X direction via the support 40. The peripheral edge of is cleaned. Thereby, particles on the entire back surface of the wafer W are removed. At this time, for example, a positive voltage is applied to the electrode 32 by the DC power supply 34. For this reason, even in the outer peripheral edge portion of the wafer W that has conventionally been bent by being pressed by the brush 30, the deflection of the wafer W is minimized by the Coulomb force that acts between the support member 31 and the wafer W. . As a result, proper contact between the back surface of the wafer W and the brush 30 is maintained, and particles on the back surface of the wafer W are removed favorably.

  When the cleaning of the back surface of the wafer W is completed, the rotation of the brush 30 and the supply of the cleaning liquid are stopped, and the spin chuck 11 is rotated at a high speed, whereby the cleaning liquid adhering to the back surface of the wafer W is shaken off and dried. At this time, purging by the purge nozzle 40b is also performed in parallel.

  When the drying is completed, the wafer W is transferred to the transport mechanism 100 in the reverse order to that when it is transported to the substrate cleaning apparatus 1, and a series of backside cleaning of the wafer W is completed.

  When the cleaning of the wafer W by the brush 30 is completed, the cleaning mechanism 12 moves to the X direction negative side in FIG. 1 and enters the brush cleaning bath 50, and the shutter 52 is closed. In the brush cleaning bath 50, first, pure water is supplied from the pure water nozzle 53 to the brush 30. Next, a voltage having a polarity opposite to that at the time of cleaning the back surface of the wafer W, that is, a negative voltage in the present embodiment, is applied to the electrode 32 by the DC power source 34. In this way, by reversing the polarity of the voltage applied to the electrode 32, the particles attached to the brush 30, in this case, particles having a negative charge, are subjected to repulsive force due to the Coulomb force and are easily separated from the brush 30. Further, for example, a positive DC voltage is applied to the electrode 54 of the brush cleaning bath 50 together with the polarity reversal of the voltage applied to the electrode 32.

  Then, with the voltage applied to the electrode 32 and the electrode 54, the cleaning mechanism 12 is moved upward, the brush 30 is pressed against the ceiling 51a as shown in FIG. 11, and the brush 30 is rotated. At this time, the upper surface side of the brush 30 has a negative charge having a polarity opposite to that at the time of cleaning the wafer W, and the lower surface side of the ceiling portion 51a is also negatively charged. The negatively charged particles receive the repulsive force from the brush 30 and the ceiling 51a in addition to rubbing with the ceiling 51a, and are efficiently removed from the brush 30. Moreover, it can also suppress that a particle adheres to the ceiling part 51a itself.

  After the cleaning of the brush 30 is completed, the cleaning mechanism 12 moves again from the brush cleaning bath 50 to the lower side of the upper cup 16, and cleaning of the back surface of the other wafer W carried into the substrate cleaning apparatus 1 is continued.

  According to the above embodiment, since the electrode 32 is provided on the support member 31 that supports the brush 30, a predetermined charge is applied to the surface of the support member 31 by applying a predetermined DC voltage to the electrode 32. Can be guided. A predetermined charge can be induced on the surface of the wafer W by electrostatic induction by the charge induced on the surface of the support member 31. As a result, an attractive force due to the Coulomb force acts between the support member 31 and the wafer W. As a result, the deflection of the wafer W caused by the pressing of the brush 30, particularly in the vicinity of the outer peripheral edge of the wafer W, can be suppressed by the support member 31 pulling the wafer W. Therefore, the contact between the wafer W and the brush 30 can be maintained over the entire surface of the wafer W, and the back surface of the wafer W can be cleaned appropriately.

  Further, since pure water in which carbon dioxide gas is dissolved is supplied from the cleaning liquid nozzle 40a to the wafer W, the charged wafer W is neutralized by applying a voltage to the electrode 32, and the charged particles adhere to the wafer W. Can be prevented.

  In addition, since the DC power supply 34 can reverse the polarity of the voltage to be applied, by reversing the polarity of the voltage when the brush 30 is cleaned, the particles having the charge attached to the brush 30 are separated from the brush by repulsion. It can be made easier. As a result, since the brush can be maintained in a clean state, the back surface of the wafer W can be cleaned well.

  Furthermore, since the substrate cleaning apparatus 1 has the brush cleaning bath 50 and charges can be transferred to the ceiling portion 51a of the brush cleaning bath by the electrode 54, the substrate 30 can also be moved from the brush 30 by the repulsive force due to the charge of the ceiling portion 51a. The separation of the particles is promoted, and the brush 30 can be maintained in a clean state. Moreover, since the adhesion of particles to the ceiling 51a itself can be suppressed by the repulsive force, it is possible to avoid the particles adhering to the ceiling 51a from adhering to the brush.

  In the above embodiment, a voltage is applied to the electrode 32 by the DC power supply 34 even when the vicinity of the center portion of the wafer W is cleaned, but the application of the voltage to the electrode 32 spins the center portion of the wafer W. The cleaning may be performed only when the vicinity of the outer peripheral edge of the wafer W in which the wafer W is in a cantilevered support state by being attracted by the chuck 11 is cleaned. When the vicinity of the central portion of the wafer W is cleaned, the both sides of the brush 30 are supported by the suction pad 10, and even if the central portion of the wafer W is pressed by the brush 30, it is far more than the case of cantilever support. This is because the amount of deflection is small and the contact between the wafer W and the brush 30 is maintained in a good state even when no voltage is applied to the electrode 32.

  Further, when a voltage is applied to the electrode 32, for example, the closer to the outer periphery of the wafer W, the larger the moment when the wafer W is pressed by the brush 30, so the magnitude of the voltage to be applied according to the magnitude of this moment. May be changed. According to the present inventors, for example, when cleaning the wafer W using the cleaning mechanism 12 having the support member 31 having a surface area of 33 cm 2 on the wafer side surface, the back surface of the wafer W and the support member 31 When the distance from the wafer side surface is, for example, 5 mm, the DC voltage applied to the electrode 32 is preferably about 500V to 1200V. In such a case, a suction force of approximately 0.2 N to 2.3 N is generated between the wafer W and the support member 31, whereby the contact between the wafer W and the brush 30 can be maintained in a good state.

  In the above embodiment, the material of the brush 30 is an insulating material such as polyvinyl alcohol, polypropylene, and nylon. However, the material of the brush 30 is not limited to the content of the present embodiment. For example, carbon may be added to an insulating material such as polyvinyl alcohol or polypropylene to provide conductivity. By making the brush 30 conductive, the charge of the support member 31 causes the charge to move in the brush 30, and an attractive force due to electrostatic induction acts between the brush 30 and the wafer W.

  In the above embodiment, the electrode 32 is provided over the entire lower surface of the support member 31, but the shape is not limited to the contents of the present embodiment, and the wafer W side of the support member 31 is provided. If the charge can be moved to the surface, the shape and size can be arbitrarily set. In such a case, for example, the electrode 32 may be disposed so as to be embedded in the vicinity of the position corresponding to the shaft 36 of the support member 31.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful when cleaning the back surface of a substrate such as a semiconductor wafer.

DESCRIPTION OF SYMBOLS 1 Substrate cleaning apparatus 10 Suction pad 11 Spin chuck 12 Cleaning mechanism 13 Housing 14 Support plate 15 Frame 16 Upper cup 20 Shaft 21 Drive mechanism 22 Lifting pin 30 Brush 31 Support member 32 Electrode 33 Base 34 DC power supply 35 Seal member 36 Shaft 37 Motor 38 Belt 40 Support 41 Drive mechanism 50 Brush cleaning bath 51 Container 51a Ceiling part 54 Electrode W Wafer

Claims (17)

A substrate cleaning apparatus comprising: a substrate holding unit that holds the back surface of the substrate by suction; and a cleaning mechanism that cleans the back surface of the substrate held by the substrate holding unit,
The cleaning mechanism is
A brush in contact with the backside of the substrate;
A support member provided on a surface of the brush opposite to the substrate;
An electrode provided on the surface of the support member opposite to the brush;
And a power supply for applying a voltage to the electrodes. The substrate cleaning apparatus according to claim 1, wherein the support member has a volume resistivity of 1 × 10 ¹⁶ Ω · cm or more. The substrate cleaning apparatus according to claim 2, wherein the support member is ceramic. The substrate cleaning apparatus according to claim 1, wherein the brush has conductivity. The substrate cleaning apparatus according to claim 1, wherein the power supply is capable of reversing the voltage applied to the electrode. A brush cleaning bath for cleaning the brush;
The substrate cleaning apparatus according to claim 1, wherein the brush cleaning mechanism includes a quartz plate and another electrode provided on an upper surface of the quartz plate. The substrate cleaning apparatus according to claim 1, further comprising a static elimination mechanism that removes electric charges charged on the substrate. The substrate cleaning apparatus according to claim 7, wherein the static elimination mechanism is a supply nozzle that supplies pure water in which carbon dioxide gas is dissolved. A method of cleaning a back surface of a substrate using a substrate holding portion that holds the back surface of the substrate by suction and a cleaning mechanism that cleans the back surface of the substrate held by the substrate holding portion,
The cleaning mechanism is
A brush in contact with the backside of the substrate;
A support member provided on a surface of the brush opposite to the substrate;
An electrode provided on the surface of the support member opposite to the brush;
A power source for applying a voltage to the electrode,
A method for cleaning a back surface of a substrate, wherein a voltage is applied to the electrode when the brush is brought into contact with the back surface of the substrate. The substrate back surface cleaning method according to claim 9, wherein the supporting member has a volume resistivity of 1 × 10 ¹⁶ Ω · cm or more. The method for cleaning a back surface of a substrate according to claim 10, wherein the support member is ceramic. The method for cleaning a back surface of a substrate according to any one of claims 9 to 11, wherein the brush has conductivity. The substrate backside cleaning method according to any one of claims 9 to 12, wherein the power supply is capable of reversing the voltage applied to the electrode. The substrate cleaning apparatus further includes a brush cleaning bath for cleaning the brush,
The brush cleaning mechanism has a quartz plate and another electrode provided on the upper surface of the quartz plate,
The method for cleaning a back surface of a substrate according to any one of claims 9 to 13, wherein the brush is cleaned by bringing the brush into contact with the quartz plate while applying a voltage to the other electrode. . The method for cleaning a back surface of a substrate according to any one of claims 9 to 14, wherein the substrate cleaning apparatus has a static elimination mechanism for removing charges charged on the substrate. 16. The method for cleaning a back surface of a substrate according to claim 15, wherein the charge removal on the substrate by the charge eliminating mechanism is performed by supplying pure water in which carbon dioxide gas is dissolved to the substrate. A cleaning mechanism for cleaning the back surface of the substrate by pressing against the back surface of the substrate held by the substrate holding unit,
A brush in contact with the backside of the substrate;
A support member provided on a surface of the brush opposite to the substrate;
An electrode provided on the surface of the support member opposite to the brush;
And a power supply for applying a voltage to the electrode.

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