JP2014529899A - 固相拡散または相変態を用いた接続層による恒久的なウエハ結合方法 - Google Patents
固相拡散または相変態を用いた接続層による恒久的なウエハ結合方法 Download PDFInfo
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- JP2014529899A JP2014529899A JP2014527503A JP2014527503A JP2014529899A JP 2014529899 A JP2014529899 A JP 2014529899A JP 2014527503 A JP2014527503 A JP 2014527503A JP 2014527503 A JP2014527503 A JP 2014527503A JP 2014529899 A JP2014529899 A JP 2014529899A
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
- ラインの前後との適合性
これは、電気的に能動的な構成要素を生成する間の、プロセスの適合性として規定される。したがって、構造体ウエハ上に既に存在するトランジスタなどの能動的な構成要素が、プロセス中に悪影響を受けることも損傷することもないように、結合プロセスが設計されなければならない。適合性の基準としては、主に、(主にCMOS構造体内の)複数のある種の化学元素の純度および主に熱応力による機械的な負荷能力が挙げられる。
- 低い汚染
- 力が加わらない、またはできるだけ力が加わらない
- 特に異なる熱膨張係数を有する材料には、できるだけ低い温度
- Cu-Fe、Cu-Ge、Cu-In、Cu-Li、Cu-Mg、Cu-Mn、Cu-Nb、Cu-Nd、Cu-Ni、Cu-Si、Cu-Sn、Cu-Zn、Cu-Zr、Cu-Ti、Cu-W、Cu-Ti、Cu-Ta、Cu-Au、Cu-Al、Cu-Cu、
- W-Fe、W-Ge、W-In、W-Li、W-Mg、W-Mn、W-Nb、W-Nd、W-Ni、W-Si、W-Sn、W-Zn、W-Zr、W-Ti、W-Ti、W-Ta、W-Au、W-Al、
- Ti-Fe、Ti-Ge、Ti-In、Ti-Li、Ti-Mg、Ti-Mn、Ti-Nb、Ti-Nd、Ti-Ni、Ti-Si、Ti-Sn、Ti-Zn、Ti-Zr、Ti-Ta、Ti-Au、Ti-Al、
- Ta-Fe、Ta-Ge、Ta-In、Ta-Li、Ta-Mg、Ta-Mn、Ta-Nb、Ta-Nd、Ta-Ni、Ta-Si、Ta-Sn、Ta-Zn、Ta-Zr、Ta-Ti、Ta-W、Ta-Ti、Ta-Ta、Ta-Au、Ta-Al、
- Au-Fe、Au-Ge、Au-In、Au-Li、Au-Mg、Au-Mn、Au-Nb、Au-Nd、Au-Ni、Au-Si、Au-Sn、Au-Zn、Au-Zr、Au-Ti、Au-W、Au-Ti、Au-Ta、Au-Au、Au-Au、Au-Al、
- Al-Fe、Al-Ge、Al-In、Al-Li、Al-Mg、Al-Mn、Al-Nb、Al-Nd、Al-Ni、Al-Si、Al-Sn、Al-Zn、Al-Zr、Al-Ti、Al-W、Al-Ti、Al-Al、Al-Al、Al-Al、
- III-V: GaP、GaAs、InP、InSb、InAs、GaSb、GaN、AlN、InN、AlxGaI-XAs、InXGaI-XN
- IV-IV: SiC、SiGe、
- III-VI: InAlP。
- 非線形光学系: LiNbO3、LiTaO3、KDP (KH2PO4)
- 太陽電池: CdS、CdSe、CdTe、CuInSe2、CuInGaSe2、CuInS2、CuInGaS2
- 導電性酸化物:In2-xSnxO3-y
- PECVD
- LPCVD
- 蒸着
- エピタキシ
- MOCVD
- スパッタリング
2 第2の固体基板
3 第1の表面層
3o 表面
4,4' 第2の表面層
4o,4o' 表面
5,5' 機能層
6 有効接触面
7 中間の空間
8 マイクロ粒子および/またはナノ粒子
9 マイクロ粒子および/またはナノ粒子
10 焼結マトリクス
11 界面
A 第1の材料
B 第2の材料
C 混合材料
R 平均厚さ
D 平均厚さ
Claims (11)
- 第1の材料を含む、第1の固体基板(1)を、第2の固体基板(2)に結合するための方法であって、特に以下の順序で以下のステップ、すなわち、
第2の材料を含む機能層(5)を前記第2の固体基板(2)に形成または塗布するステップと、
前記機能層(5)上で、前記第1の固体基板(1)を前記第2の固体基板(2)と接触させるステップと、
前記第1および第2の固体基板(1、2)間に恒久的な結合を形成するため、前記固体基板(1、2)を互いに押圧し、前記第1の材料の前記第2の材料との固体拡散および/または相変態により少なくとも部分的に補強され、前記機能層上の体積の増加が引き起こされるステップと
を含む方法。 - 前記第2の材料の前記第1の材料内への拡散による前記恒久的な結合の形成および/または補強が、特に混合材料の形成で生じる、請求項1に記載の方法。
- 前記恒久的な結合の前記形成が、室温と500℃の間、特に室温と200℃の間、好ましくは室温と150℃の間、さらにより好ましくは室温と100℃の間、最も好ましくは室温と50℃の間の温度で、特に、最大12日、好ましくは最大1日、さらにより好ましくは最大1時間、せいぜい最大15分の間に生じる、請求項1または2に記載の方法。
- 前記恒久的な結合が、1.5J/m2より大きい、特に2J/m2より大きい、好ましくは2.5J/m2より大きい結合強度を有する、請求項1から3のいずれか一項に記載の方法。
- 固体拡散および/または相変態の期間に、前記第2の材料のモル体積および第1の材料のモル体積よりも大きいモル体積を有する混合材料(C)が形成される、請求項1から4のいずれか一項に記載の方法。
- 前記機能層の塗布/形成の前および/または後に、前記固体基板の前記表面のプラズマ活性化が生じる、請求項1から5のいずれか一項に記載の方法。
- 前記固体拡散および/または相変態が、1μm未満、特に100nm未満、好ましくは10nm未満、さらにより好ましくは1nm未満の最大初期厚さDで、前記第1の固体基板(1)の第1の表面層(3)に制限される、請求項1から6のいずれか一項に記載の方法。
- 互いに押圧する前記ステップが、0.1MPaと10MPaの間の圧力で生じる、請求項1から7のいずれか一項に記載の方法。
- 前記恒久的な結合の形成前に、前記機能層(5)が1オングストロームと10nmの間の平均厚さRを有する、請求項8に記載の方法。
- 前記恒久的な結合の形成の期間の、前記第2の材料に対する前記第1の材料の溶解度境界が、固体拡散および/または相変態の、少なくともわずかにだけ超えられ、特に超えられる部位がない、請求項1から9のいずれか一項に記載の方法。
- 前記固体拡散が、少なくとも主に、粒界拡散として生じる、請求項1から10のいずれか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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PCT/EP2011/064874 WO2013029656A1 (de) | 2011-08-30 | 2011-08-30 | Verfahren zum permanenten bonden von wafern durch eine verbindungsschicht mittels festkörperdiffusion oder phasenumwandlung |
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JP2015235575A Division JP6173413B2 (ja) | 2015-12-02 | 2015-12-02 | 固相拡散または相変態を用いた接続層による恒久的なウエハ結合方法 |
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JP2018506841A (ja) * | 2014-12-23 | 2018-03-08 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を仮固定するための方法と装置 |
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EP2994935A1 (de) | 2013-07-05 | 2016-03-16 | EV Group E. Thallner GmbH | Verfahren zum bonden von metallischen kontaktflächen unter lösen einer auf einer der kontaktflächen aufgebrachten opferschicht in mindestens einer der kontaktflächen |
DE102014106231A1 (de) * | 2014-05-05 | 2015-11-05 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zum permanenten Bonden |
WO2015194861A1 (ko) * | 2014-06-17 | 2015-12-23 | 한국에너지기술연구원 | 박판 접합방법 및 박판 어셈블리 |
US10083854B2 (en) | 2014-06-24 | 2018-09-25 | Ev Group E. Thallner Gmbh | Method and device for surface treatment of substrates |
US9589937B2 (en) * | 2014-08-08 | 2017-03-07 | Wuhan Xinxin Semiconductor Manufacturing Co., Ltd | Semiconductor cooling method and method of heat dissipation |
EP3586356B1 (de) | 2017-02-21 | 2023-11-08 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
GB2582150A (en) * | 2019-03-12 | 2020-09-16 | Rolls Royce Plc | Method of forming a diffusion bonded joint |
EP3754706A1 (en) * | 2019-06-20 | 2020-12-23 | IMEC vzw | A method for the electrical bonding of semiconductor components |
EP3809453A1 (en) * | 2019-10-16 | 2021-04-21 | Infineon Technologies Austria AG | Method of forming an interconnection between metallic layers of an electric component and an electronic component with removal of oxide layers from the metallic layers by a reducing agent as well as a corresponding arrangement |
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CN103548129B (zh) | 2017-05-10 |
SG194845A1 (en) | 2013-12-30 |
EP3043378A3 (de) | 2016-10-19 |
KR20140057200A (ko) | 2014-05-12 |
EP3043378A2 (de) | 2016-07-13 |
US20140154867A1 (en) | 2014-06-05 |
CN103548129A (zh) | 2014-01-29 |
US10163681B2 (en) | 2018-12-25 |
KR101927559B1 (ko) | 2018-12-10 |
TW201310552A (zh) | 2013-03-01 |
WO2013029656A1 (de) | 2013-03-07 |
EP2729961A1 (de) | 2014-05-14 |
JP5889411B2 (ja) | 2016-03-22 |
TWI557811B (zh) | 2016-11-11 |
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