JP2014529187A - 構成部品の接続方法及び複合構造 - Google Patents
構成部品の接続方法及び複合構造 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 title claims abstract description 23
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- 230000001070 adhesive effect Effects 0.000 claims abstract description 21
- 230000004927 fusion Effects 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000005368 silicate glass Substances 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 9
- 229910052878 cordierite Inorganic materials 0.000 claims description 8
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002241 glass-ceramic Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 238000009499 grossing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
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- 230000005855 radiation Effects 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000006094 Zerodur Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 230000036571 hydration Effects 0.000 description 2
- 238000006703 hydration reaction Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- -1 polydimethylsiloxane Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000282994 Cervidae Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002800 Si–O–Al Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
- C04B37/047—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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Abstract
Description
本願は、米国特許法第119条(a)の下に、独国特許出願第102011080635号(特許文献1)、2011年8月9日出願に基づいて優先権を主張し、その全文を参照する形で本願に含める。
本発明は、異なる剛性を有する2つ(以上)の構成部品を接続する方法、及び複合構造に関するものである。
本発明の目的は、異なる剛性を有する構成部品どうしを、小さい変形が生じる方法で接続する方法を提供することにある。
この目的は、異なる剛性を有する2つの構成部品を接続する方法によって達成され、この方法は、プレート状物体を、より高い剛性を有する構成部品上に接着するステップであって、この接着を、好適にはプレート状物体上への接着によって生じる変形を修正する結合剤、特に接着剤を用いて実行するステップと、より低い剛性を有する構成部品を、上記プレート状物体に接続するステップとを含む。
Claims (16)
- 異なる剛性(E1, E2)を有する2つの構成部品(1, 2)を接続する方法であって、
プレート状物体(3)を、より高い剛性(E1)を有する前記構成部品(1)上に接着するステップであって、この接着を、好適には結合剤、特に接着剤を用いて実行するステップと、
前記接着によって生じた前記プレート状物体(3)の変形を修正するステップと、
より低い剛性(E2)を有する前記構成部品(2)を、前記プレート状物体(3)に接続するステップと
を含むことを特徴とする方法。 - 前記より低い剛性(E2)を有する構成部品(2)を、固着、陽極接合、または融着によって、前記プレート状物体(3)に接続することを特徴とする請求項1に記載の方法。
- 洗浄ステップが前記固着に先行し、及び/または、前記固着を液体で支援することを特徴とする請求項2に記載の方法。
- 前記プレート状物体(3)がガラスで形成され、好適には、前記接着後に、機械的応力を低減するための熱処理を施されることを特徴とする請求項1〜3のいずれかに記載の方法。
- 前記プレート状物体(3)の変形を修正する前に、前記接着によって前記プレート状物体(3)に生じた機械的応力がもはや変化しないまで待機することを特徴とする請求項1〜4のいずれかに記載の方法。
- 前記プレート状物体(3)を接着するステップと、前記プレート状物体(3)の変形を修正するステップとの間に、少なくとも1週間継続する待機が存在することを特徴とする請求項1〜5のいずれかに記載の方法。
- 前記変形を修正するステップが、前記プレート状物体(3)の、前記より低い剛性(E2)を有する構成部品(2)が接続される表面(3a)を平滑化することを含むことを特徴とする請求項1〜6のいずれかに記載の方法。
- 前記より高い剛性(E1)を有する構成部品(1)がSiSiCを含有し、特に、少なくとも前記プレート状物体(3)に接続される領域がSiSiCで形成されることを特徴とする請求項1〜7のいずれかに記載の方法。
- 前記より低い剛性(E2)を有する構成部品(2)の、少なくとも前記プレート状物体(3)に接続される領域が、コージーライト、ガラスセラミック、石英ガラス、またはドーピングしたケイ酸ガラスで形成されることを特徴とする請求項1〜8のいずれかに記載の方法。
- 異なる剛性(E1, E2)を有する2つの構成部品と、
より高い剛性(E1)を有する前記構成部品(1)上に、好適には結合剤、特に接着剤を用いて接着されたプレート状物体(3)とを具え、
より低い剛性(E2)を有する前記構成部品(2)が、前記プレート状物体(3)の表面(3a)に、結合剤を用いずに接続されていることを特徴とする複合構造(5)。 - 前記プレート状物体(3)がガラスプレートであることを特徴とする請求項10に記載の複合構造。
- 前記より高い剛性(E1)を有する構成部品(1)の剛性(E1)が、前記より低い剛性(E2)を有する構成部品(2)の剛性(E2)の少なくとも2倍の大きさであることを特徴とする請求項10または11に記載の複合構造。
- 前記より高い剛性を有する構成部品(1)の、少なくとも前記プレート状物体(3)に接続される領域が、シリコンカーバイドを含有する材料、特にSiSiCで構成されることを特徴とする請求項10〜12のいずれかに記載の複合構造。
- 前記より低い剛性を有する構成部品(2)の、少なくとも前記プレート状物体(3)に接続される領域が、コージーライト、石英ガラス、ガラスセラミック、またはドーピングしたケイ酸ガラスから成るグループから選択した材料で構成されることを特徴とする請求項10〜13のいずれかに記載の複合構造。
- ウェハー(6)用の保持装置として具体化されることを特徴とする請求項10〜14のいずれかに記載の複合構造。
- 前記より低い剛性(E2)を有する構成部品(2)が、EUV放射に対して反射性であるコーティング(9)を有することを特徴とする請求項10〜14のいずれかに記載の複合構造。
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US201161521564P | 2011-08-09 | 2011-08-09 | |
DE102011080635A DE102011080635A1 (de) | 2011-08-09 | 2011-08-09 | Verfahren zum Verbinden von Komponenten und Verbundstruktur |
DE102011080635.0 | 2011-08-09 | ||
US61/521,564 | 2011-08-09 | ||
PCT/EP2012/065521 WO2013021007A1 (en) | 2011-08-09 | 2012-08-08 | Method for connecting components and composite structure |
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KR102600229B1 (ko) * | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
DE102019217389A1 (de) * | 2019-10-18 | 2021-04-22 | Carl Zeiss Smt Gmbh | Verfahren zum Verbinden eines Anbauteils mit einem Grundkörper eines optischen Elements und optisches Element |
DE102021203570A1 (de) | 2021-04-12 | 2022-10-13 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Ansprengen von Bauteilen |
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