JP2014529060A5 - - Google Patents

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Publication number
JP2014529060A5
JP2014529060A5 JP2014522175A JP2014522175A JP2014529060A5 JP 2014529060 A5 JP2014529060 A5 JP 2014529060A5 JP 2014522175 A JP2014522175 A JP 2014522175A JP 2014522175 A JP2014522175 A JP 2014522175A JP 2014529060 A5 JP2014529060 A5 JP 2014529060A5
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JP
Japan
Prior art keywords
imaging system
scintillator
scintillator array
array
amount
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Application number
JP2014522175A
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English (en)
Japanese (ja)
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JP2014529060A (ja
JP6215825B2 (ja
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Priority claimed from PCT/IB2012/053372 external-priority patent/WO2013014557A1/en
Publication of JP2014529060A publication Critical patent/JP2014529060A/ja
Publication of JP2014529060A5 publication Critical patent/JP2014529060A5/ja
Application granted granted Critical
Publication of JP6215825B2 publication Critical patent/JP6215825B2/ja
Active legal-status Critical Current
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JP2014522175A 2011-07-28 2012-07-03 撮像システムおよび放射線検出方法 Active JP6215825B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161512452P 2011-07-28 2011-07-28
US61/512,452 2011-07-28
PCT/IB2012/053372 WO2013014557A1 (en) 2011-07-28 2012-07-03 Terbium based detector scintillator

Publications (3)

Publication Number Publication Date
JP2014529060A JP2014529060A (ja) 2014-10-30
JP2014529060A5 true JP2014529060A5 (enExample) 2015-08-20
JP6215825B2 JP6215825B2 (ja) 2017-10-18

Family

ID=46545429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014522175A Active JP6215825B2 (ja) 2011-07-28 2012-07-03 撮像システムおよび放射線検出方法

Country Status (6)

Country Link
US (1) US9322935B2 (enExample)
EP (1) EP2737340B1 (enExample)
JP (1) JP6215825B2 (enExample)
CN (1) CN103718063B (enExample)
RU (1) RU2605518C2 (enExample)
WO (1) WO2013014557A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105738939B (zh) * 2016-04-01 2019-03-08 西安电子科技大学 基于碳化硅PIN二极管结构的β辐照闪烁体探测器
CN115932932A (zh) * 2022-11-03 2023-04-07 宁波虔东科浩光电科技有限公司 一种闪烁体探测阵列的信号处理方法及成像设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974389A (en) 1974-11-20 1976-08-10 Gte Sylvania Incorporated Terbium-activated rare earth oxysulfide X-ray phosphors
IL80333A (en) * 1985-12-30 1991-01-31 Gen Electric Radiation detector employing solid state scintillator material and preparation methods therefor
JP2928677B2 (ja) * 1991-06-21 1999-08-03 株式会社東芝 X線検出器およびx線検査装置
DE4402260A1 (de) * 1994-01-26 1995-07-27 Siemens Ag Verfahren zur Herstellung eines Leuchtstoffs mit hoher Transluzenz
US5882547A (en) 1996-08-16 1999-03-16 General Electric Company X-ray scintillators and devices incorporating them
JP3777486B2 (ja) 1997-07-08 2006-05-24 株式会社日立メディコ 蛍光体及びそれを用いた放射線検出器及びx線ct装置
JP3741302B2 (ja) * 1998-05-06 2006-02-01 日立金属株式会社 シンチレータ
RU2350579C2 (ru) * 2004-05-17 2009-03-27 Федеральное Государственное Унитарное Предприятие "Научно-Исследовательский И Технологический Институт Оптического Материаловедения" Всероссийского Научного Центра "Государственный Оптический Институт Им. С.И.Вавилова" Флуоресцентная керамика
US7282713B2 (en) * 2004-06-10 2007-10-16 General Electric Company Compositions and methods for scintillator arrays
RU2410407C2 (ru) * 2005-04-19 2011-01-27 Конинклейке Филипс Электроникс Н.В. СПОСОБ ПОЛУЧЕНИЯ Gd2O2S:Pr С ОЧЕНЬ КРАТКОВРЕМЕННЫМ ПОСЛЕСВЕЧЕНИЕМ ДЛЯ КОМПЬЮТЕРНОЙ ТОМОГРАФИИ
WO2007004099A1 (en) * 2005-07-05 2007-01-11 Philips Intellectual Property & Standards Gmbh Gd2o2s: pr for ct with a very short afterglow due to the use of yb as a scavenger for eu
AU2006276196A1 (en) * 2005-07-25 2007-02-08 Saint-Gobain Ceramics & Plastics, Inc. Rare earth oxysulfide scintillator and methods for producing same
WO2007083248A1 (en) 2006-01-18 2007-07-26 Philips Intellectual Property & Standards Gmbh Method of making a gos ceramic using single-axis hot pressing and a flux aid
US20100231892A1 (en) * 2006-08-15 2010-09-16 Koninklijke Philips Electronics N. V. Method of measuring and/or judging the afterglow in ceramic materials and detector
WO2008075296A2 (en) 2006-12-20 2008-06-26 Koninklijke Philips Electronics N.V. Hot axial pressing method
US8294112B2 (en) 2008-08-08 2012-10-23 Koninklijke Philips Electronics N.V. Composite scintillator including a micro-electronics photo-resist
EP2443656B1 (en) * 2009-06-17 2018-11-07 The Regents of the University of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics
JP2012185123A (ja) * 2011-03-08 2012-09-27 Sony Corp 放射線撮像装置および放射線撮像装置の製造方法

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