JP2014529060A5 - - Google Patents

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Publication number
JP2014529060A5
JP2014529060A5 JP2014522175A JP2014522175A JP2014529060A5 JP 2014529060 A5 JP2014529060 A5 JP 2014529060A5 JP 2014522175 A JP2014522175 A JP 2014522175A JP 2014522175 A JP2014522175 A JP 2014522175A JP 2014529060 A5 JP2014529060 A5 JP 2014529060A5
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JP
Japan
Prior art keywords
imaging system
scintillator
scintillator array
array
amount
Prior art date
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Application number
JP2014522175A
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English (en)
Japanese (ja)
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JP6215825B2 (ja
JP2014529060A (ja
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Priority claimed from PCT/IB2012/053372 external-priority patent/WO2013014557A1/en
Publication of JP2014529060A publication Critical patent/JP2014529060A/ja
Publication of JP2014529060A5 publication Critical patent/JP2014529060A5/ja
Application granted granted Critical
Publication of JP6215825B2 publication Critical patent/JP6215825B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014522175A 2011-07-28 2012-07-03 撮像システムおよび放射線検出方法 Expired - Fee Related JP6215825B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161512452P 2011-07-28 2011-07-28
US61/512,452 2011-07-28
PCT/IB2012/053372 WO2013014557A1 (en) 2011-07-28 2012-07-03 Terbium based detector scintillator

Publications (3)

Publication Number Publication Date
JP2014529060A JP2014529060A (ja) 2014-10-30
JP2014529060A5 true JP2014529060A5 (cg-RX-API-DMAC10.html) 2015-08-20
JP6215825B2 JP6215825B2 (ja) 2017-10-18

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ID=46545429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014522175A Expired - Fee Related JP6215825B2 (ja) 2011-07-28 2012-07-03 撮像システムおよび放射線検出方法

Country Status (6)

Country Link
US (1) US9322935B2 (cg-RX-API-DMAC10.html)
EP (1) EP2737340B1 (cg-RX-API-DMAC10.html)
JP (1) JP6215825B2 (cg-RX-API-DMAC10.html)
CN (1) CN103718063B (cg-RX-API-DMAC10.html)
RU (1) RU2605518C2 (cg-RX-API-DMAC10.html)
WO (1) WO2013014557A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105738939B (zh) * 2016-04-01 2019-03-08 西安电子科技大学 基于碳化硅PIN二极管结构的β辐照闪烁体探测器
CN115932932A (zh) * 2022-11-03 2023-04-07 宁波虔东科浩光电科技有限公司 一种闪烁体探测阵列的信号处理方法及成像设备

Family Cites Families (18)

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US3974389A (en) * 1974-11-20 1976-08-10 Gte Sylvania Incorporated Terbium-activated rare earth oxysulfide X-ray phosphors
IL80333A (en) * 1985-12-30 1991-01-31 Gen Electric Radiation detector employing solid state scintillator material and preparation methods therefor
JP2928677B2 (ja) * 1991-06-21 1999-08-03 株式会社東芝 Ｘ線検出器およびｘ線検査装置
DE4402260A1 (de) * 1994-01-26 1995-07-27 Siemens Ag Verfahren zur Herstellung eines Leuchtstoffs mit hoher Transluzenz
US5882547A (en) 1996-08-16 1999-03-16 General Electric Company X-ray scintillators and devices incorporating them
JP3777486B2 (ja) 1997-07-08 2006-05-24 株式会社日立メディコ 蛍光体及びそれを用いた放射線検出器及びｘ線ｃｔ装置
JP3741302B2 (ja) * 1998-05-06 2006-02-01 日立金属株式会社 シンチレータ
RU2350579C2 (ru) * 2004-05-17 2009-03-27 Федеральное Государственное Унитарное Предприятие "Научно-Исследовательский И Технологический Институт Оптического Материаловедения" Всероссийского Научного Центра "Государственный Оптический Институт Им. С.И.Вавилова" Флуоресцентная керамика
US7282713B2 (en) * 2004-06-10 2007-10-16 General Electric Company Compositions and methods for scintillator arrays
RU2410407C2 (ru) * 2005-04-19 2011-01-27 Конинклейке Филипс Электроникс Н.В. СПОСОБ ПОЛУЧЕНИЯ Gd2O2S:Pr С ОЧЕНЬ КРАТКОВРЕМЕННЫМ ПОСЛЕСВЕЧЕНИЕМ ДЛЯ КОМПЬЮТЕРНОЙ ТОМОГРАФИИ
WO2007004099A1 (en) * 2005-07-05 2007-01-11 Philips Intellectual Property & Standards Gmbh Gd2o2s: pr for ct with a very short afterglow due to the use of yb as a scavenger for eu
CA2616098A1 (en) * 2005-07-25 2007-02-08 Saint-Gobain Ceramics & Plastics, Inc. Rare earth oxysulfide scintillator and methods for producing same
WO2007083248A1 (en) 2006-01-18 2007-07-26 Philips Intellectual Property & Standards Gmbh Method of making a gos ceramic using single-axis hot pressing and a flux aid
JP2010500595A (ja) * 2006-08-15 2010-01-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ セラミック材料のアフターグローを測定し及び／又は判断する方法及び検出器
ATE534617T1 (de) 2006-12-20 2011-12-15 Koninkl Philips Electronics Nv Heissaxialpressverfahren
US8294112B2 (en) 2008-08-08 2012-10-23 Koninklijke Philips Electronics N.V. Composite scintillator including a micro-electronics photo-resist
JP5744861B2 (ja) * 2009-06-17 2015-07-08 ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン フラットパネルｘ線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルｘ線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法
JP2012185123A (ja) * 2011-03-08 2012-09-27 Sony Corp 放射線撮像装置および放射線撮像装置の製造方法

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