JP2014519217A - 信頼性が高い停止動作及び低制御電力を有する半導体スイッチ - Google Patents
信頼性が高い停止動作及び低制御電力を有する半導体スイッチ Download PDFInfo
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- JP2014519217A JP2014519217A JP2014505747A JP2014505747A JP2014519217A JP 2014519217 A JP2014519217 A JP 2014519217A JP 2014505747 A JP2014505747 A JP 2014505747A JP 2014505747 A JP2014505747 A JP 2014505747A JP 2014519217 A JP2014519217 A JP 2014519217A
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- Japan
- Prior art keywords
- circuit
- switching device
- voltage
- energy storage
- semiconductor switch
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Abstract
Description
Claims (10)
- 電力網に対して器具又はデバイスを接続/切断するためのスイッチング装置であって、
双方向性半導体スイッチと、
少なくとも1つのキャパシタを用いて浮遊補助電圧を生成するためのバイアス供給回路と、
前記浮遊補助電圧により給電され、前記電力網から導出される供給電圧の出現、又は、分離回路を介して供給される少なくとも1つの制御信号に応答して、前記双方向性半導体スイッチをオンにするように適合されるスイッチング制御回路とを有する、スイッチング装置。 - 前記供給電圧の停止に応答して前記半導体スイッチの動作を遅延させるランダマイザを更に有する、請求項1に記載のスイッチング装置。
- 前記半導体スイッチは、少なくとも2つの金属酸化物半導体電界効果トランジスタ又は少なくとも2つの絶縁ゲートバイポーラトランジスタを有する、請求項1に記載のスイッチング装置。
- 前記バイアス供給回路は、前記電力網から導出される前記供給電圧を制限するように適合されたツェナーダイオード及び前記少なくとも1つのキャパシタの直列接続と、前記浮動補助電圧を得るために制限された供給電圧を整流するためのダイオードとを有する、請求項1に記載のスイッチング装置。
- 前記浮動補助電圧をバッファリングするためのバッファキャパシタを更に有する、請求項4に記載のスイッチング装置。
- 前記スイッチング制御回路は、ラッチ回路を有し、
前記分離回路は、前記ラッチ回路に供給されるべき制御コマンドを生成するための信号処理回路に前記少なくとも1つの制御信号を供給するための信号変圧器又は光学カプラを有する、請求項1に記載のスイッチング装置。 - 前記ラッチ回路は、双安定フリップフロップを有する、請求項6に記載のスイッチング装置。
- 前記浮動補助電圧を検知し、前記浮動補助電圧が予め決められた閾値よりも低い場合に前記ラッチ回路に制御信号を提供するように適合された監視回路を更に有し、
前記制御信号は、前記半導体スイッチのドミナントなリセットをトリガする、請求項6に記載のスイッチング装置。 - 当該装置におけるエネルギストレージ要素の状態を決定し、前記エネルギストレージ要素のエネルギレベルが予め決められた閾値よりも低い場合に他の制御信号を前記ラッチ回路に供給するように適合された他の監視回路を更に有し、
前記制御信号は、当該装置のエネルギストレージ要素の後の再充電により前記半導体スイッチのターンオンサイクルをトリガする、請求項8に記載のスイッチング装置。 - 前記監視回路は、前記補助電圧がその公称値に達すると前記補助電圧により活性化されるトランジスタを有し、
前記トランジスタのコレクタ電圧は、前記ラッチ回路の入力端子に供給される、請求項8に記載のスイッチング装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11162774.1 | 2011-04-18 | ||
EP11162774A EP2515439A1 (en) | 2011-04-18 | 2011-04-18 | Semiconductor switch with reliable blackout behavior and low control power |
PCT/IB2012/051741 WO2012143815A1 (en) | 2011-04-18 | 2012-04-10 | Semiconductor switch with reliable blackout behavior and low control power |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014519217A true JP2014519217A (ja) | 2014-08-07 |
JP2014519217A5 JP2014519217A5 (ja) | 2015-05-28 |
JP5990570B2 JP5990570B2 (ja) | 2016-09-14 |
Family
ID=44513386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014505747A Active JP5990570B2 (ja) | 2011-04-18 | 2012-04-10 | 信頼性が高い停止動作及び低制御電力を有する半導体スイッチ |
Country Status (7)
Country | Link |
---|---|
US (1) | US9065429B2 (ja) |
EP (2) | EP2515439A1 (ja) |
JP (1) | JP5990570B2 (ja) |
CN (1) | CN103548269B (ja) |
BR (1) | BR112013026515A2 (ja) |
RU (1) | RU2586447C2 (ja) |
WO (1) | WO2012143815A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2012101745B4 (en) * | 2012-12-03 | 2013-04-18 | Gerard Lighting Holdings Pty Ltd | Reduced dissipation DALI power supply |
AU2013263853B1 (en) * | 2013-11-28 | 2014-05-01 | Gerard Lighting Holdings Pty Ltd | Reduced dissipation DALI power supply |
US9537382B2 (en) * | 2014-07-03 | 2017-01-03 | CT-Concept Technologie GmbH | Switch controller with validation circuit for improved noise immunity |
CN106160708B (zh) * | 2015-04-02 | 2019-09-03 | 上海诺基亚贝尔股份有限公司 | 硬件控制电路及其电子装置 |
CN109495098B (zh) * | 2016-08-30 | 2022-07-19 | 苏州泰思特电子科技有限公司 | 紧凑型电子开关驱动电路 |
EP3300254B1 (en) * | 2016-09-26 | 2021-07-07 | HS Elektronik Systeme GmbH | Control circuit for solid state power controller |
US10199918B2 (en) | 2017-07-10 | 2019-02-05 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
RU2693685C1 (ru) * | 2018-11-06 | 2019-07-03 | Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук" (ФГУ ФНЦ НИИСИ РАН) | Асинхронный логический элемент комплементарной металл-оксид-полупроводниковой структуры |
JP7344381B2 (ja) | 2019-10-29 | 2023-09-13 | シグニファイ ホールディング ビー ヴィ | 複数のパワースイッチング要素を制御するための制御モジュール及びその方法 |
CN112019207A (zh) * | 2020-09-07 | 2020-12-01 | 中航华东光电有限公司 | 适用于消防设备的耐高温隔离栅极驱动电路 |
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2011
- 2011-04-18 EP EP11162774A patent/EP2515439A1/en not_active Ceased
-
2012
- 2012-04-10 BR BR112013026515A patent/BR112013026515A2/pt not_active IP Right Cessation
- 2012-04-10 RU RU2013151004/28A patent/RU2586447C2/ru active
- 2012-04-10 EP EP12718389.5A patent/EP2700165B1/en active Active
- 2012-04-10 WO PCT/IB2012/051741 patent/WO2012143815A1/en active Application Filing
- 2012-04-10 CN CN201280019110.1A patent/CN103548269B/zh active Active
- 2012-04-10 US US14/111,836 patent/US9065429B2/en active Active
- 2012-04-10 JP JP2014505747A patent/JP5990570B2/ja active Active
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US6269012B1 (en) * | 1999-06-29 | 2001-07-31 | Kabushiki Kaisha Toshiba | Energy efficient power supply with light-load detection |
JP2001196908A (ja) * | 1999-10-28 | 2001-07-19 | Harumi Suzuki | 交流回路用半導体スイッチ回路 |
WO2003032105A1 (fr) * | 2001-10-01 | 2003-04-17 | Takeshi Suzuki | Circuit d'alimentation de secours |
US20030117817A1 (en) * | 2001-12-21 | 2003-06-26 | Simon Turvey | Switch control circuit |
Also Published As
Publication number | Publication date |
---|---|
JP5990570B2 (ja) | 2016-09-14 |
RU2013151004A (ru) | 2015-05-27 |
BR112013026515A2 (pt) | 2016-12-27 |
CN103548269A (zh) | 2014-01-29 |
EP2700165A1 (en) | 2014-02-26 |
EP2700165B1 (en) | 2019-10-23 |
US20140049301A1 (en) | 2014-02-20 |
EP2515439A1 (en) | 2012-10-24 |
RU2586447C2 (ru) | 2016-06-10 |
CN103548269B (zh) | 2016-08-24 |
WO2012143815A1 (en) | 2012-10-26 |
US9065429B2 (en) | 2015-06-23 |
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