JP2014512670A5 - - Google Patents
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- Publication number
- JP2014512670A5 JP2014512670A5 JP2013556643A JP2013556643A JP2014512670A5 JP 2014512670 A5 JP2014512670 A5 JP 2014512670A5 JP 2013556643 A JP2013556643 A JP 2013556643A JP 2013556643 A JP2013556643 A JP 2013556643A JP 2014512670 A5 JP2014512670 A5 JP 2014512670A5
- Authority
- JP
- Japan
- Prior art keywords
- resist
- dose
- pattern
- shaped beam
- shots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000002039 particle-beam lithography Methods 0.000 claims description 2
- 238000004088 simulation Methods 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000005457 optimization Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/037,263 US20120221985A1 (en) | 2011-02-28 | 2011-02-28 | Method and system for design of a surface to be manufactured using charged particle beam lithography |
| US13/037,263 | 2011-02-28 | ||
| US13/329,314 US20120217421A1 (en) | 2011-02-28 | 2011-12-18 | Method and system for forming patterns using charged particle beam lithography with overlapping shots |
| US13/329,314 | 2011-12-18 | ||
| US13/329,315 US20120219886A1 (en) | 2011-02-28 | 2011-12-18 | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
| US13/329,315 | 2011-12-18 | ||
| PCT/US2012/025149 WO2012118616A2 (en) | 2011-02-28 | 2012-02-15 | Method and system for forming patterns using charged particle beam lithography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014512670A JP2014512670A (ja) | 2014-05-22 |
| JP2014512670A5 true JP2014512670A5 (enrdf_load_stackoverflow) | 2017-03-09 |
| JP6140082B2 JP6140082B2 (ja) | 2017-05-31 |
Family
ID=46758421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013556643A Active JP6140082B2 (ja) | 2011-02-28 | 2012-02-15 | 荷電粒子ビームリソグラフィを使用してパターンを形成するための方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2681760A4 (enrdf_load_stackoverflow) |
| JP (1) | JP6140082B2 (enrdf_load_stackoverflow) |
| KR (2) | KR20140015340A (enrdf_load_stackoverflow) |
| WO (1) | WO2012118616A2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6057635B2 (ja) * | 2012-09-14 | 2017-01-11 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| CN105717748B (zh) * | 2014-12-04 | 2017-12-29 | 上海微电子装备（集团）股份有限公司 | 一种背面曝光工艺优化方法 |
| JP6577787B2 (ja) * | 2015-08-11 | 2019-09-18 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP6616986B2 (ja) * | 2015-09-14 | 2019-12-04 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
| US10444629B2 (en) | 2016-06-28 | 2019-10-15 | D2S, Inc. | Bias correction for lithography |
| EP3355337B8 (en) * | 2017-01-27 | 2024-04-10 | IMS Nanofabrication GmbH | Advanced dose-level quantization for multibeam-writers |
| JP7094782B2 (ja) * | 2018-06-01 | 2022-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置及び電子ビーム検査方法 |
| US10884395B2 (en) * | 2018-12-22 | 2021-01-05 | D2S, Inc. | Method and system of reducing charged particle beam write time |
| US11604451B2 (en) | 2018-12-22 | 2023-03-14 | D2S, Inc. | Method and system of reducing charged particle beam write time |
| US20230124768A1 (en) | 2019-05-24 | 2023-04-20 | D2S, Inc. | Method and system for determining a charged particle beam exposure for a local pattern density |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4264711A (en) * | 1979-12-10 | 1981-04-28 | Burroughs Corporation | Method of compensating for proximity effects in electron-beam lithography |
| JP5001563B2 (ja) * | 2006-03-08 | 2012-08-15 | 株式会社ニューフレアテクノロジー | 荷電粒子線描画データの作成方法 |
| US8057970B2 (en) * | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
| TWI506672B (zh) * | 2008-09-01 | 2015-11-01 | D2S Inc | 用於在表面碎化及形成圓形圖案與用於製造半導體裝置之方法 |
| US7901850B2 (en) * | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
| US7799489B2 (en) * | 2008-09-01 | 2010-09-21 | D2S, Inc. | Method for design and manufacture of a reticle using variable shaped beam lithography |
| KR101646909B1 (ko) * | 2010-08-19 | 2016-08-09 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
-
2012
- 2012-02-15 EP EP12751849.6A patent/EP2681760A4/en not_active Withdrawn
- 2012-02-15 JP JP2013556643A patent/JP6140082B2/ja active Active
- 2012-02-15 KR KR1020137022194A patent/KR20140015340A/ko not_active Ceased
- 2012-02-15 WO PCT/US2012/025149 patent/WO2012118616A2/en active Application Filing
- 2012-02-15 KR KR1020187034228A patent/KR102005083B1/ko active Active
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