EP2681760A4 - METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY - Google Patents

METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY

Info

Publication number
EP2681760A4
EP2681760A4 EP12751849.6A EP12751849A EP2681760A4 EP 2681760 A4 EP2681760 A4 EP 2681760A4 EP 12751849 A EP12751849 A EP 12751849A EP 2681760 A4 EP2681760 A4 EP 2681760A4
Authority
EP
European Patent Office
Prior art keywords
charged particle
particle beam
beam lithography
forming patterns
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12751849.6A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2681760A2 (en
Inventor
Akira Fujimura
Harold Robert Zable
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
D2S Inc
Original Assignee
D2S Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/037,263 external-priority patent/US20120221985A1/en
Priority claimed from US13/329,314 external-priority patent/US20120217421A1/en
Priority claimed from US13/329,315 external-priority patent/US20120219886A1/en
Application filed by D2S Inc filed Critical D2S Inc
Publication of EP2681760A2 publication Critical patent/EP2681760A2/en
Publication of EP2681760A4 publication Critical patent/EP2681760A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
EP12751849.6A 2011-02-28 2012-02-15 METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY Withdrawn EP2681760A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/037,263 US20120221985A1 (en) 2011-02-28 2011-02-28 Method and system for design of a surface to be manufactured using charged particle beam lithography
US13/329,314 US20120217421A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with overlapping shots
US13/329,315 US20120219886A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
PCT/US2012/025149 WO2012118616A2 (en) 2011-02-28 2012-02-15 Method and system for forming patterns using charged particle beam lithography

Publications (2)

Publication Number Publication Date
EP2681760A2 EP2681760A2 (en) 2014-01-08
EP2681760A4 true EP2681760A4 (en) 2016-12-07

Family

ID=46758421

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12751849.6A Withdrawn EP2681760A4 (en) 2011-02-28 2012-02-15 METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY

Country Status (4)

Country Link
EP (1) EP2681760A4 (enrdf_load_stackoverflow)
JP (1) JP6140082B2 (enrdf_load_stackoverflow)
KR (2) KR20140015340A (enrdf_load_stackoverflow)
WO (1) WO2012118616A2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057635B2 (ja) * 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN105717748B (zh) * 2014-12-04 2017-12-29 上海微电子装备（集团）股份有限公司 一种背面曝光工艺优化方法
JP6577787B2 (ja) * 2015-08-11 2019-09-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10444629B2 (en) 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
EP3355337B8 (en) * 2017-01-27 2024-04-10 IMS Nanofabrication GmbH Advanced dose-level quantization for multibeam-writers
JP7094782B2 (ja) * 2018-06-01 2022-07-04 株式会社ニューフレアテクノロジー 電子ビーム検査装置及び電子ビーム検査方法
US10884395B2 (en) * 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
US11604451B2 (en) 2018-12-22 2023-03-14 D2S, Inc. Method and system of reducing charged particle beam write time
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100058279A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
JP5001563B2 (ja) * 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
US8057970B2 (en) * 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
TWI506672B (zh) * 2008-09-01 2015-11-01 D2S Inc 用於在表面碎化及形成圓形圖案與用於製造半導體裝置之方法
US7799489B2 (en) * 2008-09-01 2010-09-21 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography
KR101646909B1 (ko) * 2010-08-19 2016-08-09 삼성전자주식회사 반도체 소자 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100058279A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHRISTOPHE PIERRAT ET AL: "Impact of model-based fracturing on e-beam proximity effect correction methodology", OPTICAL SENSING II, vol. 7823, 30 September 2010 (2010-09-30), 1000 20th St. Bellingham WA 98225-6705 USA, pages 782313, XP055314684, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.864126 *
HAROLD R. ZABLE ET AL: "Writing wavy metal 1 shapes on 22-nm logic wafers with less shot count", OPTICAL SENSING II, vol. 7748, 29 April 2010 (2010-04-29), 1000 20th St. Bellingham WA 98225-6705 USA, pages 77480X, XP055314952, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.866971 *
KAZUYUKI HAGIWARA ET AL: "Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction", OPTICAL SENSING II, vol. 8081, 22 April 2011 (2011-04-22), 1000 20th St. Bellingham WA 98225-6705 USA, pages 80810U, XP055314980, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.898862 *

Also Published As

Publication number Publication date
WO2012118616A2 (en) 2012-09-07
KR20140015340A (ko) 2014-02-06
EP2681760A2 (en) 2014-01-08
WO2012118616A3 (en) 2012-12-06
JP2014512670A (ja) 2014-05-22
KR102005083B1 (ko) 2019-07-29
KR20180128525A (ko) 2018-12-03
JP6140082B2 (ja) 2017-05-31

Similar Documents

Publication Publication Date Title
EP2724197A4 (en) METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY
EP2681760A4 (en) METHOD AND SYSTEM FOR PRODUCING PATTERNS USING A CARRIER BEAM LITHOGRAPHY
EP2653191A4 (en) PARTICLE BEAM THERAPY SYSTEM
EP2620951A4 (en) METHOD FOR CHANGING THE DIRECTION OF A LOADED PARTICLE RAY
EP2750165A4 (en) ELECTRON BEAM LITHOGRAPHIC DEVICE AND LITHOGRAPHIC METHOD
IL227709A0 (en) Systems, device and methods for applying artificial implants
SG2014011399A (en) Systems and methods for regulated hybrid gaming
GB201210607D0 (en) Plasma source apparatus and method for generating charged particle beams
GB2509842B (en) Charged particle beam irradiation system and operating method of charged particle beam irradiation system
SG10201605288SA (en) Methods and systems for payments assurance
EP2594998A4 (en) CHARGED ELEMENT, PROCESS FOR PRODUCTION THEREOF, AND ELECTRICAL APPARATUS
EP2782704A4 (en) SYSTEM AND METHOD FOR PROCESSING PAPER
SG11201400460WA (en) Composition for forming fine resist pattern and pattern forming method using same
EP2800041A4 (en) SYSTEM AND METHOD FOR PAYING
EP2721485A4 (en) SYSTEM AND METHOD FOR GENERATING POLICY
EP2742474A4 (en) METHOD AND SYSTEMS FOR ACTIVATING AN ELECTRONIC PAYMENT INFRASTRUCTURE
EP2653192A4 (en) DEVICE FOR PARTICLE BEAM THERAPY
SG11201400744XA (en) Self-assembled nano-structure particle and method for preparing
EP2777766A4 (en) PARTICLE BEAM TREATMENT SYSTEM AND BEAM POSITION CORRECTION FOR THIS
GB2511384B (en) Particle beam system and pattern data generation method for particle beam system
EP2742779A4 (en) SYSTEM AND METHOD FOR WINDOW REDUCTION OF X-RAY SOURCE
GB2492071B (en) Method and system for energy modelling
EP2919898A4 (en) PROCESS FOR PRODUCTION OF PARTICLES AND APPARATUS THEREFOR
EP2886100A4 (en) METHOD FOR PROVIDING PROSTHESIS FORMATION
GB2511665B (en) Hybrid photoresist composition and pattern forming method using thereof

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130827

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20161109

RIC1 Information provided on ipc code assigned before grant

Ipc: B82Y 40/00 20110101ALI20161103BHEP

Ipc: H01J 37/302 20060101AFI20161103BHEP

Ipc: H01J 37/317 20060101ALI20161103BHEP

Ipc: B82Y 10/00 20110101ALI20161103BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20170606