KR20140015340A - 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 - Google Patents

하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 Download PDF

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KR20140015340A
KR20140015340A KR1020137022194A KR20137022194A KR20140015340A KR 20140015340 A KR20140015340 A KR 20140015340A KR 1020137022194 A KR1020137022194 A KR 1020137022194A KR 20137022194 A KR20137022194 A KR 20137022194A KR 20140015340 A KR20140015340 A KR 20140015340A
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KR
South Korea
Prior art keywords
shots
shaped beam
dose
pattern
shot
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Ceased
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KR1020137022194A
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English (en)
Korean (ko)
Inventor
아키라 후지무라
헤롤드 로버트 자블
Original Assignee
디2에스, 인코포레이티드
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Filing date
Publication date
Priority claimed from US13/037,263 external-priority patent/US20120221985A1/en
Priority claimed from US13/329,314 external-priority patent/US20120217421A1/en
Priority claimed from US13/329,315 external-priority patent/US20120219886A1/en
Application filed by 디2에스, 인코포레이티드 filed Critical 디2에스, 인코포레이티드
Publication of KR20140015340A publication Critical patent/KR20140015340A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
KR1020137022194A 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 Ceased KR20140015340A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/037,263 US20120221985A1 (en) 2011-02-28 2011-02-28 Method and system for design of a surface to be manufactured using charged particle beam lithography
US13/037,263 2011-02-28
US13/329,314 US20120217421A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with overlapping shots
US13/329,314 2011-12-18
US13/329,315 US20120219886A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US13/329,315 2011-12-18
PCT/US2012/025149 WO2012118616A2 (en) 2011-02-28 2012-02-15 Method and system for forming patterns using charged particle beam lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187034228A Division KR102005083B1 (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Publications (1)

Publication Number Publication Date
KR20140015340A true KR20140015340A (ko) 2014-02-06

Family

ID=46758421

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137022194A Ceased KR20140015340A (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템
KR1020187034228A Active KR102005083B1 (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187034228A Active KR102005083B1 (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Country Status (4)

Country Link
EP (1) EP2681760A4 (enrdf_load_stackoverflow)
JP (1) JP6140082B2 (enrdf_load_stackoverflow)
KR (2) KR20140015340A (enrdf_load_stackoverflow)
WO (1) WO2012118616A2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180088600A (ko) * 2017-01-27 2018-08-06 아이엠에스 나노패브릭케이션 게엠베하 다중 빔 라이터용 개선된 도우즈 레벨 양자화

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057635B2 (ja) * 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN105717748B (zh) * 2014-12-04 2017-12-29 上海微电子装备（集团）股份有限公司 一种背面曝光工艺优化方法
JP6577787B2 (ja) * 2015-08-11 2019-09-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10444629B2 (en) 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
JP7094782B2 (ja) * 2018-06-01 2022-07-04 株式会社ニューフレアテクノロジー 電子ビーム検査装置及び電子ビーム検査方法
US10884395B2 (en) * 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
US11604451B2 (en) 2018-12-22 2023-03-14 D2S, Inc. Method and system of reducing charged particle beam write time
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
US20100055586A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and system for forming circular patterns on a surface
US20100055581A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5001563B2 (ja) * 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
TWI506672B (zh) * 2008-09-01 2015-11-01 D2S Inc 用於在表面碎化及形成圓形圖案與用於製造半導體裝置之方法
US7901850B2 (en) * 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
KR101646909B1 (ko) * 2010-08-19 2016-08-09 삼성전자주식회사 반도체 소자 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
US20100055586A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and system for forming circular patterns on a surface
US20100055581A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Christophe Pierrat et. al., "Impact of Model-Based Fracturing on E-beam Proximity Effect Correction Methodology", Proc. of SPIE, Vol. 7823, 782313.(2010.09.29.) 1부. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180088600A (ko) * 2017-01-27 2018-08-06 아이엠에스 나노패브릭케이션 게엠베하 다중 빔 라이터용 개선된 도우즈 레벨 양자화

Also Published As

Publication number Publication date
WO2012118616A2 (en) 2012-09-07
EP2681760A2 (en) 2014-01-08
EP2681760A4 (en) 2016-12-07
WO2012118616A3 (en) 2012-12-06
JP2014512670A (ja) 2014-05-22
KR102005083B1 (ko) 2019-07-29
KR20180128525A (ko) 2018-12-03
JP6140082B2 (ja) 2017-05-31

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