JP2014510396A - ナノ構造アレイ用の電極構造およびその方法 - Google Patents
ナノ構造アレイ用の電極構造およびその方法 Download PDFInfo
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- JP2014510396A JP2014510396A JP2013552585A JP2013552585A JP2014510396A JP 2014510396 A JP2014510396 A JP 2014510396A JP 2013552585 A JP2013552585 A JP 2013552585A JP 2013552585 A JP2013552585 A JP 2013552585A JP 2014510396 A JP2014510396 A JP 2014510396A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161438709P | 2011-02-02 | 2011-02-02 | |
| US61/438,709 | 2011-02-02 | ||
| US13/331,768 | 2011-12-20 | ||
| US13/331,768 US20120152295A1 (en) | 2010-12-21 | 2011-12-20 | Arrays of filled nanostructures with protruding segments and methods thereof |
| PCT/US2012/023425 WO2012161757A1 (fr) | 2011-02-02 | 2012-02-01 | Structures d'électrode pour réseaux de nanostructures et procédés associés |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014510396A true JP2014510396A (ja) | 2014-04-24 |
| JP2014510396A5 JP2014510396A5 (fr) | 2015-03-26 |
Family
ID=47217566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013552585A Pending JP2014510396A (ja) | 2011-02-02 | 2012-02-01 | ナノ構造アレイ用の電極構造およびその方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2671255A4 (fr) |
| JP (1) | JP2014510396A (fr) |
| KR (1) | KR20140012073A (fr) |
| CN (1) | CN103460387A (fr) |
| BR (1) | BR112013019766A2 (fr) |
| CA (1) | CA2825888A1 (fr) |
| WO (1) | WO2012161757A1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992244A (zh) * | 2016-01-20 | 2017-07-28 | 财团法人工业技术研究院 | 热电转换装置以及热电转换器 |
| JP2017191816A (ja) * | 2016-04-11 | 2017-10-19 | 学校法人東京理科大学 | 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物 |
| WO2019003582A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| WO2019003581A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| KR20210065342A (ko) * | 2019-11-27 | 2021-06-04 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2013212087A1 (en) | 2012-01-25 | 2014-08-07 | Alphabet Energy, Inc. | Modular thermoelectric units for heat recovery systems and methods thereof |
| US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
| US9065017B2 (en) | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
| CN103579484A (zh) * | 2013-11-05 | 2014-02-12 | 姚芸 | 一种温差发电器用金属导体电极 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068746A (ja) * | 1999-08-24 | 2001-03-16 | Seiko Instruments Inc | 熱電変換素子とその製造方法 |
| WO2008060282A1 (fr) * | 2006-11-17 | 2008-05-22 | General Electric Company | Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication |
| JP2009043783A (ja) * | 2007-08-06 | 2009-02-26 | Denso Corp | 積層型熱電変換素子及びその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2273552A3 (fr) * | 2001-03-30 | 2013-04-10 | The Regents of the University of California | Méthodes de fabrication de nanostructures et nanofils et dispositifs ainsi obtenus |
| US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
| JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
| US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US6969679B2 (en) * | 2003-11-25 | 2005-11-29 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| US20080178920A1 (en) * | 2006-12-28 | 2008-07-31 | Schlumberger Technology Corporation | Devices for cooling and power |
| US7905013B2 (en) * | 2007-06-04 | 2011-03-15 | Sharp Laboratories Of America, Inc. | Method for forming an iridium oxide (IrOx) nanowire neural sensor array |
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| TWI401830B (zh) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | 低熱回流之熱電奈米線陣列及其製造方法 |
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- 2012-02-01 WO PCT/US2012/023425 patent/WO2012161757A1/fr active Application Filing
- 2012-02-01 BR BR112013019766A patent/BR112013019766A2/pt not_active IP Right Cessation
- 2012-02-01 EP EP12790253.4A patent/EP2671255A4/fr not_active Withdrawn
- 2012-02-01 KR KR1020137022698A patent/KR20140012073A/ko not_active Application Discontinuation
- 2012-02-01 CN CN2012800167545A patent/CN103460387A/zh active Pending
- 2012-02-01 JP JP2013552585A patent/JP2014510396A/ja active Pending
- 2012-02-01 CA CA2825888A patent/CA2825888A1/fr not_active Abandoned
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| JP2001068746A (ja) * | 1999-08-24 | 2001-03-16 | Seiko Instruments Inc | 熱電変換素子とその製造方法 |
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| JP2009043783A (ja) * | 2007-08-06 | 2009-02-26 | Denso Corp | 積層型熱電変換素子及びその製造方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992244A (zh) * | 2016-01-20 | 2017-07-28 | 财团法人工业技术研究院 | 热电转换装置以及热电转换器 |
| CN106992244B (zh) * | 2016-01-20 | 2019-01-18 | 财团法人工业技术研究院 | 热电转换装置以及热电转换器 |
| JP2017191816A (ja) * | 2016-04-11 | 2017-10-19 | 学校法人東京理科大学 | 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物 |
| WO2019003582A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| WO2019003581A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| KR20210065342A (ko) * | 2019-11-27 | 2021-06-04 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
| KR102265762B1 (ko) | 2019-11-27 | 2021-06-15 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2671255A4 (fr) | 2015-10-28 |
| CA2825888A1 (fr) | 2012-11-29 |
| EP2671255A1 (fr) | 2013-12-11 |
| KR20140012073A (ko) | 2014-01-29 |
| CN103460387A (zh) | 2013-12-18 |
| BR112013019766A2 (pt) | 2019-09-24 |
| WO2012161757A1 (fr) | 2012-11-29 |
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