CA2825888A1 - Structures d'electrode pour reseaux de nanostructures et procedes associes - Google Patents
Structures d'electrode pour reseaux de nanostructures et procedes associes Download PDFInfo
- Publication number
- CA2825888A1 CA2825888A1 CA2825888A CA2825888A CA2825888A1 CA 2825888 A1 CA2825888 A1 CA 2825888A1 CA 2825888 A CA2825888 A CA 2825888A CA 2825888 A CA2825888 A CA 2825888A CA 2825888 A1 CA2825888 A1 CA 2825888A1
- Authority
- CA
- Canada
- Prior art keywords
- nanowires
- contact layer
- contact
- materials
- another example
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 334
- 239000002086 nanomaterial Substances 0.000 title description 185
- 238000003491 array Methods 0.000 title description 102
- 239000002070 nanowire Substances 0.000 claims abstract description 389
- 239000000463 material Substances 0.000 claims description 373
- 230000008569 process Effects 0.000 claims description 262
- 239000004065 semiconductor Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 131
- 230000008878 coupling Effects 0.000 claims description 67
- 238000010168 coupling process Methods 0.000 claims description 67
- 238000005859 coupling reaction Methods 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 229910052709 silver Inorganic materials 0.000 claims description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 26
- 229910052718 tin Inorganic materials 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 25
- 239000011651 chromium Substances 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 13
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000005219 brazing Methods 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910016006 MoSi Inorganic materials 0.000 claims description 11
- 229910010380 TiNi Inorganic materials 0.000 claims description 11
- 229910008484 TiSi Inorganic materials 0.000 claims description 11
- 229910008599 TiW Inorganic materials 0.000 claims description 11
- 229910008812 WSi Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910000531 Co alloy Inorganic materials 0.000 claims description 6
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 6
- 239000004964 aerogel Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000000859 sublimation Methods 0.000 claims description 6
- 230000008022 sublimation Effects 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 4
- 229910005883 NiSi Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 78
- 238000012986 modification Methods 0.000 description 37
- 230000004048 modification Effects 0.000 description 37
- 239000004020 conductor Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000010944 silver (metal) Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 229910052745 lead Inorganic materials 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 239000002071 nanotube Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000002106 nanomesh Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
L'invention porte sur un dispositif thermoélectrique et sur des procédés associés. Le dispositif thermoélectrique comprend des nanofils, une couche de contact et un shunt. Chacun des nanofils comprend une première extrémité et une seconde extrémité. La couche de contact se couple électriquement aux nanofils par l'intermédiaire d'au moins la première extrémité de chacun des nanofils. Le shunt est couplé électriquement à la couche de contact. L'ensemble des nanofils sont sensiblement parallèles les uns aux autres. Une première résistivité de contact entre la première extrémité et la couche de contact va de 10-13 O-m2 à 10-7 O-m2. Un premier travail d'extraction entre la première extrémité et la couche de contact est inférieur à 0,8 électron-volts. La couche de contact est associée à une première résistance thermique allant de 10-2 K/W à 1010 K/W.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161438709P | 2011-02-02 | 2011-02-02 | |
| US61/438,709 | 2011-02-02 | ||
| US13/331,768 | 2011-12-20 | ||
| US13/331,768 US20120152295A1 (en) | 2010-12-21 | 2011-12-20 | Arrays of filled nanostructures with protruding segments and methods thereof |
| PCT/US2012/023425 WO2012161757A1 (fr) | 2011-02-02 | 2012-02-01 | Structures d'électrode pour réseaux de nanostructures et procédés associés |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2825888A1 true CA2825888A1 (fr) | 2012-11-29 |
Family
ID=47217566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2825888A Abandoned CA2825888A1 (fr) | 2011-02-02 | 2012-02-01 | Structures d'electrode pour reseaux de nanostructures et procedes associes |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2671255A4 (fr) |
| JP (1) | JP2014510396A (fr) |
| KR (1) | KR20140012073A (fr) |
| CN (1) | CN103460387A (fr) |
| BR (1) | BR112013019766A2 (fr) |
| CA (1) | CA2825888A1 (fr) |
| WO (1) | WO2012161757A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2013212087A1 (en) | 2012-01-25 | 2014-08-07 | Alphabet Energy, Inc. | Modular thermoelectric units for heat recovery systems and methods thereof |
| US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
| US9065017B2 (en) | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
| CN103579484A (zh) * | 2013-11-05 | 2014-02-12 | 姚芸 | 一种温差发电器用金属导体电极 |
| TWI570972B (zh) * | 2016-01-20 | 2017-02-11 | 財團法人工業技術研究院 | 熱電轉換裝置以及熱電轉換器 |
| JP6830587B2 (ja) * | 2016-04-11 | 2021-02-17 | 学校法人東京理科大学 | 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物 |
| WO2019003581A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| WO2019003582A1 (fr) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Module de conversion thermoélectrique et module de composant électronique |
| KR102265762B1 (ko) * | 2019-11-27 | 2021-06-15 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3600486B2 (ja) * | 1999-08-24 | 2004-12-15 | セイコーインスツル株式会社 | 熱電変換素子の製造方法 |
| EP2273552A3 (fr) * | 2001-03-30 | 2013-04-10 | The Regents of the University of California | Méthodes de fabrication de nanostructures et nanofils et dispositifs ainsi obtenus |
| US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
| JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
| US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US6969679B2 (en) * | 2003-11-25 | 2005-11-29 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| WO2008060282A1 (fr) * | 2006-11-17 | 2008-05-22 | General Electric Company | Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication |
| US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| US20080178920A1 (en) * | 2006-12-28 | 2008-07-31 | Schlumberger Technology Corporation | Devices for cooling and power |
| US7905013B2 (en) * | 2007-06-04 | 2011-03-15 | Sharp Laboratories Of America, Inc. | Method for forming an iridium oxide (IrOx) nanowire neural sensor array |
| JP4925964B2 (ja) * | 2007-08-06 | 2012-05-09 | 株式会社デンソー | 積層型熱電変換素子及びその製造方法 |
| FR2923601B1 (fr) * | 2007-11-12 | 2010-01-01 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation |
| TWI401830B (zh) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | 低熱回流之熱電奈米線陣列及其製造方法 |
-
2012
- 2012-02-01 WO PCT/US2012/023425 patent/WO2012161757A1/fr active Application Filing
- 2012-02-01 BR BR112013019766A patent/BR112013019766A2/pt not_active IP Right Cessation
- 2012-02-01 EP EP12790253.4A patent/EP2671255A4/fr not_active Withdrawn
- 2012-02-01 KR KR1020137022698A patent/KR20140012073A/ko not_active Application Discontinuation
- 2012-02-01 CN CN2012800167545A patent/CN103460387A/zh active Pending
- 2012-02-01 JP JP2013552585A patent/JP2014510396A/ja active Pending
- 2012-02-01 CA CA2825888A patent/CA2825888A1/fr not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2671255A4 (fr) | 2015-10-28 |
| JP2014510396A (ja) | 2014-04-24 |
| EP2671255A1 (fr) | 2013-12-11 |
| KR20140012073A (ko) | 2014-01-29 |
| CN103460387A (zh) | 2013-12-18 |
| BR112013019766A2 (pt) | 2019-09-24 |
| WO2012161757A1 (fr) | 2012-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20160322554A1 (en) | Electrode structures for arrays of nanostructures and methods thereof | |
| US20150147842A1 (en) | Arrays of filled nanostructures with protruding segments and methods thereof | |
| CA2825888A1 (fr) | Structures d'electrode pour reseaux de nanostructures et procedes associes | |
| US9514931B2 (en) | Low thermal conductivity matrices with embedded nanostructures and methods thereof | |
| US9735022B2 (en) | Arrays of long nanostructures in semiconductor materials and methods thereof | |
| US10749094B2 (en) | Thermoelectric devices, systems and methods | |
| KR101631042B1 (ko) | 고성능 열전 속성을 갖는 나노구조체 | |
| Hochbaum et al. | Enhanced thermoelectric performance of rough silicon nanowires | |
| CN101969095B (zh) | 准一维纳米结构热电材料及其制备方法和应用 | |
| WO2009014985A2 (fr) | Procédés et dispositifs pour contrôler une conductivité thermique et une puissance thermoélectrique de nanofils semi-conducteurs | |
| JP2009539261A (ja) | 熱電ナノチューブアレイ | |
| CN103311262B (zh) | 微型热电器件、制作方法及包括其的温差发电机 | |
| US9082930B1 (en) | Nanostructured thermolectric elements and methods of making the same | |
| JP2012533185A (ja) | ナノ構造を必要とせず半導体材料製の処理済層を利用したセーベック／ペルティ効果を利用した熱−電気変換装置 | |
| US20110168224A1 (en) | Thermoelectric device and thermoelectric device array | |
| CN203288656U (zh) | 微型热电器件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |
Effective date: 20170201 |
|
| FZDE | Discontinued |
Effective date: 20170201 |