WO2008060282A1 - Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication - Google Patents

Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication Download PDF

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Publication number
WO2008060282A1
WO2008060282A1 PCT/US2006/044542 US2006044542W WO2008060282A1 WO 2008060282 A1 WO2008060282 A1 WO 2008060282A1 US 2006044542 W US2006044542 W US 2006044542W WO 2008060282 A1 WO2008060282 A1 WO 2008060282A1
Authority
WO
WIPO (PCT)
Prior art keywords
nanowires
disposed
thermally conductive
thermally insulating
thermally
Prior art date
Application number
PCT/US2006/044542
Other languages
English (en)
Inventor
An-Ping Zhang
Fazila Seker
Reed Roeder Corderman
Shixue Wen
Fred Sharifi
Melissa Suzanne Sander
Craig Douglas Young
Original Assignee
General Electric Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company filed Critical General Electric Company
Priority to PCT/US2006/044542 priority Critical patent/WO2008060282A1/fr
Publication of WO2008060282A1 publication Critical patent/WO2008060282A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/60—Thermal-PV hybrids

Definitions

  • FIG. 8 is a cross-sectional view of the substrate of FIG. 7 having a thermally insulating material disposed on the etched portions of the thermally insulating template for a thermoelement of the thermal transfer device of FIG. 3 in accordance with aspects of the present technique;
  • the term "vehicle” may refer to a land- based, an air-based or a sea-based means of transportation.
  • the thermal transfer module 12 includes a plurality of thermoelectric devices.
  • the thermoelectric module 12 comprises n-type semiconductor legs 18 and p-type semiconductor legs 20 that function as thermoelements, whereby heat generated by charge transport is transferred away from the object 14 towards the object 16.
  • the n-type and p-type semiconductor legs 18 and 20 are disposed on patterned electrodes 22 and 24 that are coupled to the first and second objects 14 and 16, respectively.
  • thermoelectric materials include silicon germanium based alloys, bismuth antimonide based alloys, lead telluride based alloys, bismuth telluride based alloys, or other III- V, IV, IV-VI, and II- VI semiconductors, or any combinations thereof having substantially high thermoelectric figure-of-merit, and their combinations thereof.
  • the plurality of nanowires 70 includes one-dimensional nanowires, or segmented nanowires, or zero-dimensional superlattice nanowires.
  • Each of the plurality of nanowires 70 may include a p-type nanowire or an n-type nanowire that is electrochemically deposited on the substrate 72 to form thermoelements 74 and 76 of the thermal transfer device 60.
  • the thermal transfer device 126 includes a plurality of nanowires 128 disposed within the pores 124 of the thermally insulating template 122.
  • the plurality of nanowires 128 includes one-dimensional nanowires, or segmented nanowires, or zero- dimensional superlattice nanowires.
  • the plurality of nanowires 128 includes p-type nanowires.
  • the plurality of nanowires 128 includes n-type nanowires.
  • thermal transfer devices described above may also be employed for thermal energy conversion and for thermal management. It should be noted that the materials and the manufacturing techniques for the thermal transfer device may be selected based upon a desired thermal management need of an object. Such devices may be used for cooling of microelectronic systems such as microprocessor and integrated circuits. Further, the thermal transfer devices may be employed for thermal management of semiconductor devices, photonic devices, and infrared sensors.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un dispositif qui comprend un premier substrat thermoconducteur sur lequel est disposée une première électrode à motif, et un second substrat thermoconducteur sur lequel est disposée une seconde électrode à motif, sachant que le premier et le second substrat thermoconducteurs sont placés de sorte que la première et la seconde électrode à motif sont adjacentes. Le dispositif comprend une pluralité de nanofils disposés entre la première et la seconde électrode à motif, sachant que la pluralité de nanofils est formée d'un matériau thermoélectrique. Le dispositif comprend aussi un matériau de jonction disposé entre la pluralité de nanofils et au moins l'une des deux électrodes à motif.
PCT/US2006/044542 2006-11-17 2006-11-17 Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication WO2008060282A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2006/044542 WO2008060282A1 (fr) 2006-11-17 2006-11-17 Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2006/044542 WO2008060282A1 (fr) 2006-11-17 2006-11-17 Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication

Publications (1)

Publication Number Publication Date
WO2008060282A1 true WO2008060282A1 (fr) 2008-05-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/044542 WO2008060282A1 (fr) 2006-11-17 2006-11-17 Dispositifs de transfert thermique et de génération d'énergie et leurs procédés de fabrication

Country Status (1)

Country Link
WO (1) WO2008060282A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2192628A2 (fr) * 2008-11-26 2010-06-02 Electronics and Telecommunications Research Institute Dispositif thermoélectrique, module de dispositif thermoélectrique, et procédé de formation du dispositif thermoélectrique
EP2405502A1 (fr) * 2009-03-03 2012-01-11 Tokyo University Of Science Educational Foundation Administrative Organization Élément de conversion thermoélectrique et module de conversion thermoélectrique
WO2013174627A1 (fr) * 2012-05-25 2013-11-28 Robert Bosch Gmbh Agencement d'éléments seebeck, dispositif à éléments seebeck et procédé de fabrication d'un agencement d'éléments seebeck
JP2014510396A (ja) * 2011-02-02 2014-04-24 アルファベット エナジー インコーポレイテッド ナノ構造アレイ用の電極構造およびその方法
US9514931B2 (en) 2010-12-03 2016-12-06 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
US9691849B2 (en) 2014-04-10 2017-06-27 Alphabet Energy, Inc. Ultra-long silicon nanostructures, and methods of forming and transferring the same
WO2018133900A1 (fr) * 2017-01-23 2018-07-26 Bpe International Dr. Hornig Gmbh Installation d'énergie autonome

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073699A2 (fr) * 2001-03-14 2002-09-19 University Of Massachusetts Nanofabrication
WO2003046265A2 (fr) * 2001-11-26 2003-06-05 Massachusetts Institute Of Technology Production de films epais d'alumine anodique poreuse et de reseaux de nanocables sur un substrat solide
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073699A2 (fr) * 2001-03-14 2002-09-19 University Of Massachusetts Nanofabrication
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
WO2003046265A2 (fr) * 2001-11-26 2003-06-05 Massachusetts Institute Of Technology Production de films epais d'alumine anodique poreuse et de reseaux de nanocables sur un substrat solide
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ABRAMSON A R ET AL: "FABRICATION AND CHARACTERIZATION OF A NANOWIRE/POLYMER-BASED NANOCOMPOSITE FOR A PROTOTYPE THERMOELECTRIC DEVICE", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 13, no. 3, June 2004 (2004-06-01), pages 505 - 513, XP011113573, ISSN: 1057-7157 *
WANG W ET AL: "A new type of low power thermoelectric micro-generator fabricated by nanowire array thermoelectric material", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 77, no. 3-4, April 2005 (2005-04-01), pages 223 - 229, XP004809314, ISSN: 0167-9317 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2192628A2 (fr) * 2008-11-26 2010-06-02 Electronics and Telecommunications Research Institute Dispositif thermoélectrique, module de dispositif thermoélectrique, et procédé de formation du dispositif thermoélectrique
EP2192628A3 (fr) * 2008-11-26 2012-06-27 Electronics and Telecommunications Research Institute Dispositif thermoélectrique, module de dispositif thermoélectrique, et procédé de formation du dispositif thermoélectrique
EP2405502A1 (fr) * 2009-03-03 2012-01-11 Tokyo University Of Science Educational Foundation Administrative Organization Élément de conversion thermoélectrique et module de conversion thermoélectrique
EP2405502A4 (fr) * 2009-03-03 2012-11-14 Univ Tokyo Sci Educ Found Élément de conversion thermoélectrique et module de conversion thermoélectrique
US9514931B2 (en) 2010-12-03 2016-12-06 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
JP2014510396A (ja) * 2011-02-02 2014-04-24 アルファベット エナジー インコーポレイテッド ナノ構造アレイ用の電極構造およびその方法
WO2013174627A1 (fr) * 2012-05-25 2013-11-28 Robert Bosch Gmbh Agencement d'éléments seebeck, dispositif à éléments seebeck et procédé de fabrication d'un agencement d'éléments seebeck
US9691849B2 (en) 2014-04-10 2017-06-27 Alphabet Energy, Inc. Ultra-long silicon nanostructures, and methods of forming and transferring the same
WO2018133900A1 (fr) * 2017-01-23 2018-07-26 Bpe International Dr. Hornig Gmbh Installation d'énergie autonome

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