JP2014509448A - 可逆接着性熱界面材料 - Google Patents
可逆接着性熱界面材料 Download PDFInfo
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- JP2014509448A JP2014509448A JP2013548908A JP2013548908A JP2014509448A JP 2014509448 A JP2014509448 A JP 2014509448A JP 2013548908 A JP2013548908 A JP 2013548908A JP 2013548908 A JP2013548908 A JP 2013548908A JP 2014509448 A JP2014509448 A JP 2014509448A
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- Prior art keywords
- thermal interface
- interface material
- polymer
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- electronic assembly
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Images
Classifications
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
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Landscapes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
【解決手段】 本発明は、電子部品のための可逆接着性熱界面材料並びにその製造及び使用方法に向けられる。より具体的には、本発明の実施形態は、熱可逆性接着剤と熱伝導性かつ非導電性充填材とを含む熱界面材料を提供し、この熱界面材料は、0.2W/m・K又はそれ以上の熱伝導率及び9×1011オーム・cm又はそれ以上の電気抵抗率によって特徴付けられる。
【選択図】 図1
Description
12、22:電子チップ
14、26、40、56:ヒートシンク
16、28、29、38、58、62:熱界面材料(TIM)層
24:熱拡散板
30、50:単一チップ・モジュール(組立てられたモジュール)
32、54:基板
34、60:単一チップ
35:はんだ接合
36:アンダーフィル・ポリマー
42:ベース
44:締結具
52:保護キャップ
53:接着剤接合部
Claims (20)
- 複数の第1の官能基を含むポリマー、及び
複数の第2の官能基を含む架橋剤
を含み、前記第1の官能基と前記第2の官能基とが可逆架橋反応の相補反応物である、熱可逆性接着剤と、
熱伝導性かつ非導電性の充填材と
を含む熱界面材料であって、
前記熱界面材料は、0.2W/m・K又はそれ以上の熱伝導率及び9×1011オーム・cm又はそれ以上の電気抵抗率を与えるのに有効な量の前記充填材を有する、
熱界面材料。 - 前記ポリマーは、アクリル、エポキシ、フルオロポリマー、イミド、メタクリレート、ポリアクリレート、ポリアミド、ポリブタジエン、ポリカーボネート、ポリエステル、ポリプロピレン、ポリウレタン、ポリ塩化ビニル、シロキサン及びこれらの組合せから成る群から選択される、請求項1に記載の熱界面材料。
- 前記複数の第1の官能基は、窒素、酸素又はイオウ含有基を通して前記ポリマーに共有結合する、請求項1又は請求項2に記載の熱界面材料。
- 前記第1の官能基は、窒素含有基を通して前記ポリマーに共有結合するジエン部分である、前記請求項のいずれかに記載の熱界面材料。
- 前記ポリマーは、アミノ官能化シロキサンポリマーとフラン部分との反応生成物を含む、前記請求項のいずれかに記載の熱界面材料。
- 前記第2の官能基は、ジエノフィル部分である、前記請求項のいずれかに記載の熱界面材料。
- 前記架橋剤は、複数のマレイミド部分を含む、前記請求項のいずれかに記載の熱界面材料。
- 前記架橋剤は、ビス(マレイミド)アルカンである、前記請求項のいずれかに記載の熱界面材料。
- 前記充填材は、窒化ホウ素、窒化アルミニウム、及びアルミナから成る群から選択される、前記請求項のいずれかに記載の熱界面材料。
- 動作中に熱を発生するように構成された第1の要素と、
前記第1の要素が発生した熱を伝達して逃すように構成された第2の要素と、
前記第1の要素と前記第2の要素との間に配置された熱界面材料の層と
を備える電子組立体であって、
前記熱界面材料は、
複数の第1の官能基を含むポリマー、及び
複数の第2の官能基を含む架橋剤
を含む可逆性接着剤であって、前記第1の官能基と前記第2の官能基とが可逆架橋反応の相補反応物である、可逆性接着剤と、
熱伝導性かつ非導電性の充填材と
を含み、
前記熱界面材料は、0.2W/mK又はそれ以上の熱伝導率及び9×1011オーム・cm又はそれ以上の電気抵抗率を与えるのに有効な量の前記充填材を有する、
電子組立体。 - 前記ポリマーは、アクリル、エポキシ、フルオロポリマー、イミド、メタクリレート、ポリアクリレート、ポリアミド、ポリブタジエン、ポリカーボネート、ポリエステル、ポリプロピレン、ポリウレタン、ポリ塩化ビニル、シロキサン及びこれらの組合せから成る群から選択される、請求項10に記載の電子組立体。
- 前記複数の第1の官能基は、窒素、酸素又はイオウ含有基を通して前記ポリマーに共有結合する、請求項10又は請求項11に記載の電子組立体。
- 前記第1の官能基は、窒素含有基を通して前記ポリマーに共有結合するジエン部分である、請求項10から請求項12までのいずれかに記載の電子組立体。
- 前記ポリマーは、アミノ官能化シロキサンポリマーとフラン部分との反応生成物を含む、請求項10から請求項13までのいずれかに記載の電子組立体。
- 前記第2の官能基は、ジエノフィル部分である、請求項10から請求項14までのいずれかに記載の電子組立体。
- 前記架橋剤は、複数のマレイミド部分を含む、請求項10から請求項15までのいずれかに記載の電子組立体。
- 前記架橋剤は、ビス(マレイミド)アルカンである、請求項10から請求項16までのいずれかに記載の電子組立体。
- 前記充填材は、窒化ホウ素、窒化アルミニウム、及びアルミナから成る群から選択される、請求項10から請求項17までのいずれかに記載の電子組立体。
- 動作中に熱を発生するように構成された第1の要素と、前記第1の要素が発生した熱を伝達して逃がすように構成された第2の要素との間に熱界面を作成する方法であって、前記方法は、
前記第1の要素又は前記第2の要素のうちの少なくとも一方に熱界面材料を塗布して熱界面材料層を形成するステップであって、前記熱界面材料が、熱可逆性接着剤と、熱伝導性かつ非導電性の充填材とを含み、前記熱可逆性接着剤が、
複数の第1の官能基を含むポリマーと、
複数の第2の官能基を含む架橋剤と
を含み、前記第1の官能基と前記第2の官能基とが可逆架橋反応の相補反応物である、
ステップと、
前記第1の要素と前記第2の要素との間に前記熱界面材料層を挟むことにより前記第1の要素と前記第2の要素とを可逆的に組み合わせるステップと
を含み、
前記熱界面材料が、0.2W/m・K又はそれ以上の熱伝導率及び9×1011オーム・cm又はそれ以上の電気抵抗率によって特徴付けられる、
方法。 - 初回に、前記熱界面材料を、前記可逆架橋反応に影響を及ぼすのに十分な開始温度まで加熱することにより前記ポリマーを架橋させるステップと、
二回目に、前記熱界面材料を、前記ポリマーを実質的に未架橋状態に戻すのに十分な再加工温度まで加熱するステップと、
前記第1の要素を前記第2の要素から分離するステップと
をさらに含む、請求項19に記載の方法。
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US13/006,602 US8917510B2 (en) | 2011-01-14 | 2011-01-14 | Reversibly adhesive thermal interface material |
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PCT/IB2012/050035 WO2012095757A1 (en) | 2011-01-14 | 2012-01-04 | Reversibly adhesive thermal interface material |
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- 2012-01-04 JP JP2013548908A patent/JP5792833B2/ja active Active
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KR101757584B1 (ko) * | 2016-03-16 | 2017-07-12 | 전자부품연구원 | 재제조성 방열필름용 조성물 및 그의 제조방법 |
US11152363B2 (en) | 2018-03-28 | 2021-10-19 | Qorvo Us, Inc. | Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process |
US11646242B2 (en) | 2018-11-29 | 2023-05-09 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
US20210296199A1 (en) | 2018-11-29 | 2021-09-23 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
US11942389B2 (en) | 2018-11-29 | 2024-03-26 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
US20220139862A1 (en) | 2019-01-23 | 2022-05-05 | Qorvo Us, Inc. | Rf devices with enhanced performance and methods of forming the same |
US11387157B2 (en) | 2019-01-23 | 2022-07-12 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US20200235054A1 (en) | 2019-01-23 | 2020-07-23 | Qorvo Us, Inc. | Rf devices with enhanced performance and methods of forming the same |
US11710680B2 (en) | 2019-01-23 | 2023-07-25 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US11923313B2 (en) | 2019-01-23 | 2024-03-05 | Qorvo Us, Inc. | RF device without silicon handle substrate for enhanced thermal and electrical performance and methods of forming the same |
US11961813B2 (en) | 2019-01-23 | 2024-04-16 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US11646289B2 (en) | 2019-12-02 | 2023-05-09 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US11923238B2 (en) | 2019-12-12 | 2024-03-05 | Qorvo Us, Inc. | Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive |
Also Published As
Publication number | Publication date |
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JP5792833B2 (ja) | 2015-10-14 |
GB2502216B (en) | 2019-11-27 |
WO2012095757A1 (en) | 2012-07-19 |
CN103314435A (zh) | 2013-09-18 |
GB201314185D0 (en) | 2013-09-25 |
DE112012000238T5 (de) | 2013-09-05 |
US8917510B2 (en) | 2014-12-23 |
GB2502216A (en) | 2013-11-20 |
DE112012000238B4 (de) | 2019-01-17 |
US20120182693A1 (en) | 2012-07-19 |
CN103314435B (zh) | 2017-03-22 |
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