JP2014509351A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014509351A5 JP2014509351A5 JP2013553471A JP2013553471A JP2014509351A5 JP 2014509351 A5 JP2014509351 A5 JP 2014509351A5 JP 2013553471 A JP2013553471 A JP 2013553471A JP 2013553471 A JP2013553471 A JP 2013553471A JP 2014509351 A5 JP2014509351 A5 JP 2014509351A5
- Authority
- JP
- Japan
- Prior art keywords
- target
- chamber
- substrate support
- coupled
- grounding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 16
- 239000004020 conductor Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910004140 HfO Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910010038 TiAl Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161441186P | 2011-02-09 | 2011-02-09 | |
| US61/441,186 | 2011-02-09 | ||
| PCT/US2012/023762 WO2012109104A2 (en) | 2011-02-09 | 2012-02-03 | Uniformity tuning capable esc grounding kit for rf pvd chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014509351A JP2014509351A (ja) | 2014-04-17 |
| JP2014509351A5 true JP2014509351A5 (enExample) | 2015-03-26 |
| JP6351262B2 JP6351262B2 (ja) | 2018-07-04 |
Family
ID=46639133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013553471A Active JP6351262B2 (ja) | 2011-02-09 | 2012-02-03 | Ｒｆ ｐｖｄチャンバ用の均一性調整可能ｅｓｃ接地キット |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9087679B2 (enExample) |
| JP (1) | JP6351262B2 (enExample) |
| KR (1) | KR101904516B1 (enExample) |
| CN (1) | CN103348446B (enExample) |
| TW (1) | TWI582824B (enExample) |
| WO (1) | WO2012109104A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10714436B2 (en) | 2012-12-12 | 2020-07-14 | Lam Research Corporation | Systems and methods for achieving uniformity across a redistribution layer |
| CN105336640B (zh) * | 2014-06-17 | 2018-12-11 | 北京北方华创微电子装备有限公司 | 一种反应腔室和反应设备 |
| CN105734520B (zh) * | 2014-12-11 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 工艺腔室 |
| US9865437B2 (en) * | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
| CN104928625B (zh) * | 2015-05-22 | 2017-06-16 | 沈阳富创精密设备有限公司 | 一种pvd制备半导体装备用抗高温蠕变接地基片的方法 |
| US20160348233A1 (en) * | 2015-05-29 | 2016-12-01 | Applied Materials, Inc. | Grounding of conductive mask for deposition processes |
| US11640917B2 (en) | 2018-12-07 | 2023-05-02 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
| WO2021025913A1 (en) * | 2019-08-02 | 2021-02-11 | Applied Materials, Inc. | Radio frequency power return path |
| US11664247B2 (en) * | 2020-10-16 | 2023-05-30 | Applied Materials, Inc. | Dynamic interface for providing a symmetric radio frequency return path |
| CN115679271B (zh) * | 2021-07-22 | 2024-09-20 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室 |
| US11898236B2 (en) | 2021-10-20 | 2024-02-13 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| CN114023620B (zh) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | 一种用于处理基片的处理站 |
| CN117116731A (zh) * | 2022-05-16 | 2023-11-24 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置、等离子体约束系统及方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3661758A (en) * | 1970-06-26 | 1972-05-09 | Hewlett Packard Co | Rf sputtering system with the anode enclosing the target |
| JPS6454733A (en) * | 1987-08-26 | 1989-03-02 | Toshiba Corp | Production device for semiconductor |
| JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
| US6221221B1 (en) * | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
| JP4108354B2 (ja) * | 2001-03-30 | 2008-06-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| JP4040607B2 (ja) | 2004-06-14 | 2008-01-30 | 芝浦メカトロニクス株式会社 | スパッタリング装置及び方法並びにスパッタリング制御用プログラム |
| US7713390B2 (en) | 2005-05-16 | 2010-05-11 | Applied Materials, Inc. | Ground shield for a PVD chamber |
| US7976671B2 (en) * | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
| US8123902B2 (en) | 2007-03-21 | 2012-02-28 | Applied Materials, Inc. | Gas flow diffuser |
| US8357746B2 (en) * | 2007-05-03 | 2013-01-22 | Johns Manville | Binding of fibrous material utilizing a water soluble Michael adduct crosslinking agent and polycarboxylic acid |
| JP4580040B2 (ja) * | 2008-07-31 | 2010-11-10 | キヤノンアネルバ株式会社 | プラズマ処理装置および電子デバイスの製造方法 |
| WO2010065474A2 (en) * | 2008-12-03 | 2010-06-10 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| TWI558843B (zh) * | 2009-02-04 | 2016-11-21 | 應用材料股份有限公司 | 用於電漿製程的接地回流路徑 |
| KR20120004502A (ko) | 2009-04-03 | 2012-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 ｒｆ-ｄｃ 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법 |
| CN102576664A (zh) | 2009-08-11 | 2012-07-11 | 应用材料公司 | 用于rf物理气相沉积的处理套件 |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
-
2012
- 2012-02-03 KR KR1020137023856A patent/KR101904516B1/ko active Active
- 2012-02-03 JP JP2013553471A patent/JP6351262B2/ja active Active
- 2012-02-03 US US13/365,876 patent/US9087679B2/en active Active
- 2012-02-03 CN CN201280007994.9A patent/CN103348446B/zh active Active
- 2012-02-03 WO PCT/US2012/023762 patent/WO2012109104A2/en not_active Ceased
- 2012-02-08 TW TW101104101A patent/TWI582824B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014509351A5 (enExample) | ||
| US11011357B2 (en) | Methods and apparatus for multi-cathode substrate processing | |
| JP6351262B2 (ja) | Ｒｆ ｐｖｄチャンバ用の均一性調整可能ｅｓｃ接地キット | |
| US10984993B2 (en) | Plasma processing apparatus | |
| TW201142068A (en) | Apparatus for physical vapor deposition having centrally fed RF energy | |
| JP2011515582A5 (enExample) | ||
| JP5834944B2 (ja) | マグネトロンスパッタ装置及び成膜方法 | |
| WO2016018505A1 (en) | Magnetron assembly for physical vapor deposition chamber | |
| JP2016091812A5 (enExample) | ||
| WO2011139439A3 (en) | Physical vapor deposition chamber with rotating magnet assembly and centrally fed rf power | |
| JP2011179120A (ja) | 多点クランプを用いた物理蒸着装置及び方法 | |
| WO2011056581A3 (en) | Rotary magnetron magnet bar and apparatus containing the same for high target utilization | |
| CN109750265B (zh) | 溅镀系统、在基板上沉积材料的方法及判定溅镀靶材的生命周期的结束的方法 | |
| TW200741794A (en) | RF powered target for increasing deposition uniformity in sputtering systems | |
| CN103132036A (zh) | 制造ic屏蔽镀膜的设备及ic的金属屏蔽膜层 | |
| US20140346037A1 (en) | Sputter device | |
| US9567668B2 (en) | Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method | |
| JP2020503436A (ja) | スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法 | |
| PH12013502181A1 (en) | High power impulse magnetron sputtering method providing enhanced ionization of the sputtered particles and apparatus for its implementation | |
| WO2016180443A1 (en) | Radio frequency (rf) - sputter deposition source, deposition apparatus and method of operating thereof | |
| KR20150003137A (ko) | Ｒｆ 장비 도금 방법 및 이에 사용되는 스퍼터링 장치 | |
| MX2020012423A (es) | Dispositivo de pulverizacion catodica por magnetron. | |
| CN101418429B (zh) | 对细长工件进行pvd镀膜的方法 | |
| TWM445584U (zh) | 連續式濺鍍設備 | |
| WO2012040158A3 (en) | Creation of magnetic field (vector potential) well for improved plasma deposition and resputtering uniformity |