KR101904516B1 - Ｒｆ ｐｖｄ 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트 - Google Patents

Ｒｆ ｐｖｄ 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트 Download PDF

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KR101904516B1
KR101904516B1 KR1020137023856A KR20137023856A KR101904516B1 KR 101904516 B1 KR101904516 B1 KR 101904516B1 KR 1020137023856 A KR1020137023856 A KR 1020137023856A KR 20137023856 A KR20137023856 A KR 20137023856A KR 101904516 B1 KR101904516 B1 KR 101904516B1
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substrate support
target
processing chamber
ground
chamber
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KR20140063511A (ko
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무함마드 엠. 레쉬이드
롱준 왕
탄 엑스. 엔구옌
아란 에이. 리치
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020137023856A 2011-02-09 2012-02-03 Ｒｆ ｐｖｄ 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트 Active KR101904516B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161441186P 2011-02-09 2011-02-09
US61/441,186 2011-02-09
PCT/US2012/023762 WO2012109104A2 (en) 2011-02-09 2012-02-03 Uniformity tuning capable esc grounding kit for rf pvd chamber

Publications (2)

Publication Number Publication Date
KR20140063511A KR20140063511A (ko) 2014-05-27
KR101904516B1 true KR101904516B1 (ko) 2018-10-04

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KR1020137023856A Active KR101904516B1 (ko) 2011-02-09 2012-02-03 Ｒｆ ｐｖｄ 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트

Country Status (6)

Country Link
US (1) US9087679B2 (enExample)
JP (1) JP6351262B2 (enExample)
KR (1) KR101904516B1 (enExample)
CN (1) CN103348446B (enExample)
TW (1) TWI582824B (enExample)
WO (1) WO2012109104A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10714436B2 (en) 2012-12-12 2020-07-14 Lam Research Corporation Systems and methods for achieving uniformity across a redistribution layer
CN105336640B (zh) * 2014-06-17 2018-12-11 北京北方华创微电子装备有限公司 一种反应腔室和反应设备
CN105734520B (zh) * 2014-12-11 2018-08-24 北京北方华创微电子装备有限公司 工艺腔室
US9865437B2 (en) * 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
CN104928625B (zh) * 2015-05-22 2017-06-16 沈阳富创精密设备有限公司 一种pvd制备半导体装备用抗高温蠕变接地基片的方法
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
US11640917B2 (en) 2018-12-07 2023-05-02 Applied Materials, Inc. Ground electrode formed in an electrostatic chuck for a plasma processing chamber
CN114502771B (zh) * 2019-08-02 2026-08-04 应用材料公司 射频功率返回路径
US11664247B2 (en) * 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
CN115679271B (zh) * 2021-07-22 2024-09-20 北京北方华创微电子装备有限公司 半导体工艺腔室
US11898236B2 (en) 2021-10-20 2024-02-13 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN114023620B (zh) * 2021-10-29 2023-07-14 德鸿半导体设备(浙江)有限公司 一种用于处理基片的处理站
CN117116731A (zh) * 2022-05-16 2023-11-24 中微半导体设备(上海)股份有限公司 等离子体处理装置、等离子体约束系统及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163690A (ja) * 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置
US20100196626A1 (en) * 2009-02-04 2010-08-05 Applied Materials, Inc. Ground return for plasma processes

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661758A (en) * 1970-06-26 1972-05-09 Hewlett Packard Co Rf sputtering system with the anode enclosing the target
JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
JP4040607B2 (ja) * 2004-06-14 2008-01-30 芝浦メカトロニクス株式会社 スパッタリング装置及び方法並びにスパッタリング制御用プログラム
US7713390B2 (en) 2005-05-16 2010-05-11 Applied Materials, Inc. Ground shield for a PVD chamber
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US8123902B2 (en) 2007-03-21 2012-02-28 Applied Materials, Inc. Gas flow diffuser
US8357746B2 (en) * 2007-05-03 2013-01-22 Johns Manville Binding of fibrous material utilizing a water soluble Michael adduct crosslinking agent and polycarboxylic acid
JP2012510727A (ja) * 2008-12-03 2012-05-10 アプライド マテリアルズ インコーポレイテッド 均一性制御のためのｒｆ帰還用ストラップの調整
CN102439697B (zh) 2009-04-03 2015-08-19 应用材料公司 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
KR20120089647A (ko) 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 물리적 기상 증착을 위한 프로세스 키트
US8795488B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Apparatus for physical vapor deposition having centrally fed RF energy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163690A (ja) * 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置
US20100196626A1 (en) * 2009-02-04 2010-08-05 Applied Materials, Inc. Ground return for plasma processes

Also Published As

Publication number Publication date
CN103348446B (zh) 2016-08-24
JP2014509351A (ja) 2014-04-17
CN103348446A (zh) 2013-10-09
US9087679B2 (en) 2015-07-21
TWI582824B (zh) 2017-05-11
KR20140063511A (ko) 2014-05-27
JP6351262B2 (ja) 2018-07-04
TW201239944A (en) 2012-10-01
US20120211354A1 (en) 2012-08-23
WO2012109104A3 (en) 2013-01-03
WO2012109104A2 (en) 2012-08-16

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