JP2014509351A - Rfpvdチャンバ用の均一性調整可能esc接地キット - Google Patents
Rfpvdチャンバ用の均一性調整可能esc接地キット Download PDFInfo
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- JP2014509351A JP2014509351A JP2013553471A JP2013553471A JP2014509351A JP 2014509351 A JP2014509351 A JP 2014509351A JP 2013553471 A JP2013553471 A JP 2013553471A JP 2013553471 A JP2013553471 A JP 2013553471A JP 2014509351 A JP2014509351 A JP 2014509351A
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- 238000012545 processing Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims description 71
- 238000009826 distribution Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910004140 HfO Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 22
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- AIRCTMFFNKZQPN-UHFFFAOYSA-N AlO Inorganic materials [Al]=O AIRCTMFFNKZQPN-UHFFFAOYSA-N 0.000 description 2
- -1 NiPt Inorganic materials 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910001000 nickel titanium Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【選択図】図1
Description
101 チャンバ本体
105 基板
110 内部容積
120 基台組立体
132 ターゲット
140 RF電源
143 RFフィード端子
150 接地キット
Claims (15)
- チャンバ本体と、
前記チャンバ本体上に配置されたターゲットと、
RF電力供給非対称性を生じる位置で前記ターゲットに結合されたRF電力フィードと、
前記チャンバ本体に電気的に結合された基板支持体と、
前記ターゲット及び前記基板支持体を囲むシールドと、
前記シールドと前記基板支持体との間に非対称接地経路を与えるように位置決めされた導電体を有し、該導電体の位置が前記電力供給非対称性を補償するように選択される接地キットと、
を備える、処理チャンバ。 - 前記RFフィード端子に結合され、13.56MHzよりも高い周波数のRF電力を前記ターゲットに供給するように作動可能なRF電源を更に備える、請求項1に記載の処理チャンバ。
- 前記接地キットが、N+1個又はそれ以上のコンタクト装着位置を有する接地プレートを含み、前記Nは前記接地プレートに結合されるコンタクトの個数である、ことを特徴とする請求項1に記載の処理チャンバ。
- 前記接地キットが、
前記基板支持体に結合され且つ複数の装着場所を有する接地プレートと、
前記基板支持体の半径方向外向きの位置で且つ前記接地キットを通じて非対称接地経路を生じる向きで前記接地プレートに結合された複数の高弾性導電コンタクトと、
を含み、前記コンタクト数が装着場所の数よりも少ない、ことを特徴とする請求項1に記載の処理チャンバ。 - 前記複数の導電コンタクトがばね形態である、ことを特徴とする請求項4に記載の処理チャンバ。
- 前記接地プレートがリングのセグメントである、ことを特徴とする請求項4に記載の処理チャンバ。
- チャンバ本体と、
前記チャンバ本体上に配置されたターゲットと、
前記ターゲットに結合され且つ電源から供給されたRF電力を前記ターゲットに結合するように構成されたRFフィード端子と、
前記チャンバ本体に電気的に結合された基板支持体と、
前記ターゲット及び前記基板支持体を囲むシールドと、
前記シールドと前記基板支持体との間に非対称接地経路を与えるように構成された位置変更可能な導電コンタクトの非対称方位角方向分布を有する接地キットと、
を備える処理チャンバ。 - 前記接地キットが、前記基板支持体に結合され且つ複数の導電コンタクト装着場所を有する接地プレートを含み、前記各装着場所が、前記導電コンタクトのうちの1つを前記基板支持体の半径方向外向きの位置で受け入れるように構成され、前記コンタクト数が前記装着場所数よりも少ない、ことを特徴とする請求項7に記載のチャンバ。
- 前記導電コンタクトがばね形態である、ことを特徴とする請求項7に記載のチャンバ。
- 前記接地プレートがリングのセグメントである、ことを特徴とする請求項8に記載のチャンバ。
- 前記接地プレートがリングである、ことを特徴とする請求項8に記載のチャンバ。
- 前記RFフィード端子に結合され且つ13.56MHzよりも高い周波数のRF電力を前記ターゲットに供給するように作動可能なRF電源を更に備える、請求項7に記載のチャンバ。
- 前記RFフィード端子が、前記ターゲットの中心線からオフセットされた場所でRF電力を前記ターゲットに供給するように位置決めされる、ことを特徴とする請求項7に記載のチャンバ。
- 前記ターゲットが、Si、SiN、Er、Yb、Y、Hf、HfO、Ru、Co、AlN、Ti、TiAl、TiN、AlO、Al、Cu、Ta、TaN、TaC、W、WN、La、LaO、Ni、及びニッケル合金からなる群から選択される、ことを特徴とする請求項7に記載のチャンバ。
- 基板を処理するための方法であって、
基板支持体と接地シールドとの間に、前記基板が該基板支持体上に配置された後に前記基板支持体の周縁部の周りに非対称方位角方向分布を有する複数の位置変更可能な導電コンタクトを通じて非対称プラズマ分布を実質的に補償する非対称接地経路を確立する段階と、
3.56MHzよりも高い周波数の電力をターゲットに供給して前記ターゲットから材料をスパッタリングする段階と、
前記スパッタリングされた材料を前記基板上に堆積させる段階と、
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161441186P | 2011-02-09 | 2011-02-09 | |
US61/441,186 | 2011-02-09 | ||
PCT/US2012/023762 WO2012109104A2 (en) | 2011-02-09 | 2012-02-03 | Uniformity tuning capable esc grounding kit for rf pvd chamber |
Publications (3)
Publication Number | Publication Date |
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JP2014509351A true JP2014509351A (ja) | 2014-04-17 |
JP2014509351A5 JP2014509351A5 (ja) | 2015-03-26 |
JP6351262B2 JP6351262B2 (ja) | 2018-07-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013553471A Active JP6351262B2 (ja) | 2011-02-09 | 2012-02-03 | Rf pvdチャンバ用の均一性調整可能esc接地キット |
Country Status (6)
Country | Link |
---|---|
US (1) | US9087679B2 (ja) |
JP (1) | JP6351262B2 (ja) |
KR (1) | KR101904516B1 (ja) |
CN (1) | CN103348446B (ja) |
TW (1) | TWI582824B (ja) |
WO (1) | WO2012109104A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10714436B2 (en) | 2012-12-12 | 2020-07-14 | Lam Research Corporation | Systems and methods for achieving uniformity across a redistribution layer |
CN105336640B (zh) * | 2014-06-17 | 2018-12-11 | 北京北方华创微电子装备有限公司 | 一种反应腔室和反应设备 |
CN105734520B (zh) * | 2014-12-11 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 工艺腔室 |
US9865437B2 (en) * | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
CN104928625B (zh) * | 2015-05-22 | 2017-06-16 | 沈阳富创精密设备有限公司 | 一种pvd制备半导体装备用抗高温蠕变接地基片的方法 |
US20160348233A1 (en) * | 2015-05-29 | 2016-12-01 | Applied Materials, Inc. | Grounding of conductive mask for deposition processes |
WO2020117371A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
KR20220039789A (ko) * | 2019-08-02 | 2022-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 라디오 주파수 전력 리턴 경로 |
CN115679271A (zh) * | 2021-07-22 | 2023-02-03 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室 |
US11898236B2 (en) | 2021-10-20 | 2024-02-13 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN114023620B (zh) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | 一种用于处理基片的处理站 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
WO2010065474A2 (en) * | 2008-12-03 | 2010-06-10 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
JP2010163690A (ja) * | 2008-07-31 | 2010-07-29 | Canon Anelva Corp | プラズマ処理装置 |
US20100196626A1 (en) * | 2009-02-04 | 2010-08-05 | Applied Materials, Inc. | Ground return for plasma processes |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3661758A (en) * | 1970-06-26 | 1972-05-09 | Hewlett Packard Co | Rf sputtering system with the anode enclosing the target |
JPS6454733A (en) * | 1987-08-26 | 1989-03-02 | Toshiba Corp | Production device for semiconductor |
US6221221B1 (en) * | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
JP4108354B2 (ja) * | 2001-03-30 | 2008-06-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
JP4040607B2 (ja) | 2004-06-14 | 2008-01-30 | 芝浦メカトロニクス株式会社 | スパッタリング装置及び方法並びにスパッタリング制御用プログラム |
US7713390B2 (en) | 2005-05-16 | 2010-05-11 | Applied Materials, Inc. | Ground shield for a PVD chamber |
US7976671B2 (en) * | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
US8123902B2 (en) * | 2007-03-21 | 2012-02-28 | Applied Materials, Inc. | Gas flow diffuser |
US8357746B2 (en) * | 2007-05-03 | 2013-01-22 | Johns Manville | Binding of fibrous material utilizing a water soluble Michael adduct crosslinking agent and polycarboxylic acid |
KR20120004502A (ko) | 2009-04-03 | 2012-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 rf-dc 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법 |
US20110036709A1 (en) | 2009-08-11 | 2011-02-17 | Applied Materials, Inc. | Process kit for rf physical vapor deposition |
US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
-
2012
- 2012-02-03 JP JP2013553471A patent/JP6351262B2/ja active Active
- 2012-02-03 CN CN201280007994.9A patent/CN103348446B/zh active Active
- 2012-02-03 US US13/365,876 patent/US9087679B2/en active Active
- 2012-02-03 WO PCT/US2012/023762 patent/WO2012109104A2/en active Application Filing
- 2012-02-03 KR KR1020137023856A patent/KR101904516B1/ko active IP Right Grant
- 2012-02-08 TW TW101104101A patent/TWI582824B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
JP2010163690A (ja) * | 2008-07-31 | 2010-07-29 | Canon Anelva Corp | プラズマ処理装置 |
WO2010065474A2 (en) * | 2008-12-03 | 2010-06-10 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
US20100196626A1 (en) * | 2009-02-04 | 2010-08-05 | Applied Materials, Inc. | Ground return for plasma processes |
WO2010091205A2 (en) * | 2009-02-04 | 2010-08-12 | Applied Materials, Inc. | Ground return for plasma processes |
Also Published As
Publication number | Publication date |
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TWI582824B (zh) | 2017-05-11 |
JP6351262B2 (ja) | 2018-07-04 |
WO2012109104A2 (en) | 2012-08-16 |
KR20140063511A (ko) | 2014-05-27 |
WO2012109104A3 (en) | 2013-01-03 |
KR101904516B1 (ko) | 2018-10-04 |
US20120211354A1 (en) | 2012-08-23 |
CN103348446B (zh) | 2016-08-24 |
US9087679B2 (en) | 2015-07-21 |
CN103348446A (zh) | 2013-10-09 |
TW201239944A (en) | 2012-10-01 |
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