JP2014508420A5 - - Google Patents

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Publication number
JP2014508420A5
JP2014508420A5 JP2013558032A JP2013558032A JP2014508420A5 JP 2014508420 A5 JP2014508420 A5 JP 2014508420A5 JP 2013558032 A JP2013558032 A JP 2013558032A JP 2013558032 A JP2013558032 A JP 2013558032A JP 2014508420 A5 JP2014508420 A5 JP 2014508420A5
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JP
Japan
Prior art keywords
type
semiconductor laser
laser
facets
cladding
Prior art date
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Abandoned
Application number
JP2013558032A
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English (en)
Japanese (ja)
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JP2014508420A (ja
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Publication date
Priority claimed from US13/050,058 external-priority patent/US9917421B2/en
Application filed filed Critical
Publication of JP2014508420A publication Critical patent/JP2014508420A/ja
Publication of JP2014508420A5 publication Critical patent/JP2014508420A5/ja
Abandoned legal-status Critical Current

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JP2013558032A 2011-03-17 2012-03-01 半導体量子カスケードレーザのファセットに隣接するｐ型分離領域 Abandoned JP2014508420A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/050,058 US9917421B2 (en) 2011-03-17 2011-03-17 P-type isolation regions adjacent to semiconductor laser facets
US13/050,058 2011-03-17
PCT/US2012/027192 WO2012125299A1 (en) 2011-03-17 2012-03-01 P-type isolation regions adjacent to facets of semiconductor quantum cascade laser

Publications (2)

Publication Number Publication Date
JP2014508420A JP2014508420A (ja) 2014-04-03
JP2014508420A5 true JP2014508420A5 (enExample) 2015-04-23

Family

ID=45952634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013558032A Abandoned JP2014508420A (ja) 2011-03-17 2012-03-01 半導体量子カスケードレーザのファセットに隣接するｐ型分離領域

Country Status (7)

Country Link
US (1) US9917421B2 (enExample)
EP (1) EP2686921B1 (enExample)
JP (1) JP2014508420A (enExample)
KR (1) KR20140018914A (enExample)
CN (1) CN103430405B (enExample)
TW (1) TW201246738A (enExample)
WO (1) WO2012125299A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8514902B2 (en) * 2011-03-17 2013-08-20 Corning Incorporated P-type isolation between QCL regions
US20130243018A1 (en) * 2012-03-14 2013-09-19 Daylight Solutions, Inc. Gain medium with improved thermal characteristics
US9450053B2 (en) * 2012-07-26 2016-09-20 Massachusetts Institute Of Technology Photonic integrated circuits based on quantum cascade structures
US9231368B2 (en) 2012-11-30 2016-01-05 Thorlabs Quantum Electronics, Inc. Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
JP2015536576A (ja) 2012-11-30 2015-12-21 ソーラボ クアンタム エレクトロニクス インコーポレイテッドＴｈｏｒｌａｂｓ Ｑｕａｎｔｕｍ Ｅｌｅｃｔｒｏｎｉｃｓ， Ｉｎｃ． 異なる活性および不活性コアの成長による多波長量子カスケードレーザ
WO2018073634A1 (en) * 2016-10-17 2018-04-26 Centre National De La Recherche Scientifique Laser source and method of manufacturing such
CN106981497A (zh) * 2017-02-14 2017-07-25 盐城东紫光电科技有限公司 一种高压倒装led芯片结构及其制造方法
US10340661B2 (en) * 2017-11-01 2019-07-02 International Business Machines Corporation Electro-optical device with lateral current injection regions
JP2019186278A (ja) * 2018-04-03 2019-10-24 住友電気工業株式会社 量子カスケードレーザ
JP7028049B2 (ja) * 2018-04-26 2022-03-02 住友電気工業株式会社 量子カスケードレーザ
KR102687553B1 (ko) * 2020-07-23 2024-07-24 한국전자통신연구원 광 도파로 소자 및 그를 포함하는 레이저 장치
TWI866432B (zh) * 2023-08-31 2024-12-11 國立臺灣科技大學 具有多段式光柵結構的高功率單波長半導體雷射

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208388A (ja) * 1990-01-09 1991-09-11 Nec Corp 半導体レーザ及びその製造方法と不純物拡散方法
JP3725582B2 (ja) * 1995-07-05 2005-12-14 三菱電機株式会社 半導体レーザ装置の製造方法，及び半導体レーザ装置
EP0898345A3 (en) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
US7283557B2 (en) 2002-01-25 2007-10-16 Fulcrum Microsystems, Inc. Asynchronous crossbar with deterministic or arbitrated control
US7359418B2 (en) * 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
US7274719B2 (en) 2005-03-09 2007-09-25 Agilent Technologies, Inc. Buried heterostructure quantum cascade laser
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping
US7349456B2 (en) * 2005-10-07 2008-03-25 Agilent Technologies, Inc. Gain-coupled distributed quantum cascade laser
US7843982B2 (en) 2005-12-15 2010-11-30 Palo Alto Research Center Incorporated High power semiconductor device to output light with low-absorbtive facet window
US7505502B2 (en) 2006-03-28 2009-03-17 Panasonic Corporation Semiconductor laser device and manufacturing method thereof

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