JP2014507810A - 静電クランプ装置およびリソグラフィ装置 - Google Patents

静電クランプ装置およびリソグラフィ装置 Download PDF

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Publication number
JP2014507810A
JP2014507810A JP2013557017A JP2013557017A JP2014507810A JP 2014507810 A JP2014507810 A JP 2014507810A JP 2013557017 A JP2013557017 A JP 2013557017A JP 2013557017 A JP2013557017 A JP 2013557017A JP 2014507810 A JP2014507810 A JP 2014507810A
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JP
Japan
Prior art keywords
patterning device
sensor array
capacitive sensor
reticle
operable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2013557017A
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English (en)
Japanese (ja)
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JP2014507810A5 (https=
Inventor
バニエ，バディム，エヴィジェンエビッチ
ループストラ，エリック，ルーロフ
カデー，セオドルス，ペトルス，マリア
アッケルマンス，ヨハネス，アントニウス，ゲラルドス
スキャカバラロッツィ，ルイージ
ヴァレンティン，クリスティアーン，ルイス
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2014507810A publication Critical patent/JP2014507810A/ja
Publication of JP2014507810A5 publication Critical patent/JP2014507810A5/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013557017A 2011-03-11 2012-01-18 静電クランプ装置およびリソグラフィ装置 Ceased JP2014507810A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161451803P 2011-03-11 2011-03-11
US61/451,803 2011-03-11
PCT/EP2012/050727 WO2012123144A1 (en) 2011-03-11 2012-01-18 Electrostatic clamp apparatus and lithographic apparatus

Publications (2)

Publication Number Publication Date
JP2014507810A true JP2014507810A (ja) 2014-03-27
JP2014507810A5 JP2014507810A5 (https=) 2015-03-05

Family

ID=45507693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013557017A Ceased JP2014507810A (ja) 2011-03-11 2012-01-18 静電クランプ装置およびリソグラフィ装置

Country Status (6)

Country Link
US (1) US20140002805A1 (https=)
JP (1) JP2014507810A (https=)
KR (1) KR20140023927A (https=)
CN (1) CN103415811B (https=)
TW (1) TW201237567A (https=)
WO (1) WO2012123144A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014167963A (ja) * 2013-02-28 2014-09-11 Toshiba Corp 静電チャック、レチクル、および静電チャック方法
JP2024511441A (ja) * 2021-03-22 2024-03-13 アプライド マテリアルズ インコーポレイテッド ウエハのチャッキング及びデチャッキングを検出する静電容量方式

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104797979B (zh) * 2013-01-22 2018-04-17 Asml荷兰有限公司 静电夹具
US9505140B1 (en) 2015-06-02 2016-11-29 Irobot Corporation Contact sensors for a mobile robot
US9462920B1 (en) 2015-06-25 2016-10-11 Irobot Corporation Evacuation station
CN106933059B (zh) * 2015-12-31 2018-11-13 上海微电子装备（集团）股份有限公司 一种在线监测补偿掩膜版热变形的装置和方法
NL2022780A (en) * 2018-04-12 2019-10-22 Asml Netherlands Bv Apparatus and method
KR102233467B1 (ko) * 2018-09-12 2021-03-31 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
WO2020094467A1 (en) * 2018-11-09 2020-05-14 Asml Holding N.V. Sensor array for real time detection of reticle position and forces
KR102829107B1 (ko) * 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
US12174552B2 (en) * 2019-10-29 2024-12-24 Asml Holding N.V. Lithographic apparatus and electrostatic clamp designs
KR102788879B1 (ko) * 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US20230031443A1 (en) * 2019-12-26 2023-02-02 Asml Holding N.V. Wafer clamp hard burl production and refurbishment
CN115917437A (zh) * 2020-06-23 2023-04-04 Asml控股股份有限公司 通过将可变电压施加到氧化晶片上来检测突节顶部上的亚微米颗粒
EP4002010A1 (en) * 2020-11-18 2022-05-25 ASML Netherlands B.V. Electrostatic clamp
KR102504347B1 (ko) * 2020-12-23 2023-02-28 한국세라믹기술원 센서 칩이 장착된 정전척 및 이를 이용한 정전용량 및 척킹력 측정 방법
WO2025218972A1 (en) * 2024-04-16 2025-10-23 Asml Netherlands B.V. Module for a lithographic apparatus, lithographic apparatus and method for clamping a sensor member

Citations (5)

* Cited by examiner, † Cited by third party
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JPH0890474A (ja) * 1994-09-27 1996-04-09 Fujitsu Ltd 静電チャックとそれを用いた異物検出方法
JP2004342850A (ja) * 2003-05-15 2004-12-02 Sony Corp 露光方法、マスク、半導体装置の製造方法および半導体装置
JP2005150527A (ja) * 2003-11-18 2005-06-09 Canon Inc 保持装置、それを用いた露光装置およびデバイス製造方法
JP2005322671A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp レチクルステージ
JP2010511176A (ja) * 2006-11-29 2010-04-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 半導体の製造中に不要パーティクルの存在を検出するための方法およびシステム

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JP4365908B2 (ja) * 1998-09-04 2009-11-18 キヤノン株式会社 面位置検出装置、露光装置およびデバイス製造方法
JP3894562B2 (ja) * 2003-10-01 2007-03-22 キヤノン株式会社 基板吸着装置、露光装置およびデバイス製造方法
JP2005191515A (ja) * 2003-12-01 2005-07-14 Nikon Corp 静電チャックおよび露光装置ならびに被吸着物の吸着方法
KR100723483B1 (ko) * 2005-02-03 2007-05-31 삼성전자주식회사 레티클 로딩장치 및 로딩방법
US7643130B2 (en) * 2005-11-04 2010-01-05 Nuflare Technology, Inc. Position measuring apparatus and positional deviation measuring method
NL1036785A1 (nl) 2008-04-18 2009-10-20 Asml Netherlands Bv Rapid exchange device for lithography reticles.
NL2003266A1 (nl) * 2008-08-11 2010-02-15 Asml Holding Nv Multi nozzle proximity sensor employing common sensing and nozzle shaping.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0890474A (ja) * 1994-09-27 1996-04-09 Fujitsu Ltd 静電チャックとそれを用いた異物検出方法
JP2004342850A (ja) * 2003-05-15 2004-12-02 Sony Corp 露光方法、マスク、半導体装置の製造方法および半導体装置
JP2005150527A (ja) * 2003-11-18 2005-06-09 Canon Inc 保持装置、それを用いた露光装置およびデバイス製造方法
JP2005322671A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp レチクルステージ
JP2010511176A (ja) * 2006-11-29 2010-04-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 半導体の製造中に不要パーティクルの存在を検出するための方法およびシステム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014167963A (ja) * 2013-02-28 2014-09-11 Toshiba Corp 静電チャック、レチクル、および静電チャック方法
JP2024511441A (ja) * 2021-03-22 2024-03-13 アプライド マテリアルズ インコーポレイテッド ウエハのチャッキング及びデチャッキングを検出する静電容量方式

Also Published As

Publication number Publication date
US20140002805A1 (en) 2014-01-02
TW201237567A (en) 2012-09-16
WO2012123144A1 (en) 2012-09-20
KR20140023927A (ko) 2014-02-27
CN103415811B (zh) 2016-07-06
CN103415811A (zh) 2013-11-27

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