JP2014503999A - フィーチャのめっきのための選択的なシード層の処理 - Google Patents
フィーチャのめっきのための選択的なシード層の処理 Download PDFInfo
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- JP2014503999A JP2014503999A JP2013541077A JP2013541077A JP2014503999A JP 2014503999 A JP2014503999 A JP 2014503999A JP 2013541077 A JP2013541077 A JP 2013541077A JP 2013541077 A JP2013541077 A JP 2013541077A JP 2014503999 A JP2014503999 A JP 2014503999A
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- 238000012545 processing Methods 0.000 title claims abstract description 8
- 238000007747 plating Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003054 catalyst Substances 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 238000001465 metallisation Methods 0.000 abstract description 49
- 230000008569 process Effects 0.000 abstract description 17
- 238000000059 patterning Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 20
- 238000013461 design Methods 0.000 description 16
- 238000003860 storage Methods 0.000 description 11
- 230000015654 memory Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007787 long-term memory Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006403 short-term memory Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0709—Catalytic ink or adhesive for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
Description
520 フィーチャ
520A フィーチャ
520B フィーチャ
520C フィーチャ
504 誘電体層
506 シード層
508 領域
510 導電材料
Claims (20)
- 誘電体材料の中に複数のフィーチャを形成するステップと、
前記誘電体材料の上と、前記複数のフィーチャの中とにシード層を堆積させるステップと、
前記複数のフィーチャの中の前記シード層の一部を選択的に処理するステップと、
処理されていないシード層部分を除去するステップと、
前記複数のフィーチャを選択的に充填するために、処理されたシード層部分にめっきするステップと
を含む方法。 - 前記複数のフィーチャが、トレンチ、面、およびパッドの少なくとも1つを含む、請求項1に記載の方法。
- 前記シード層が触媒インクを含む、請求項1に記載の方法。
- 前記シード層を選択的に処理するステップが、前記シード層を選択的に硬化させるステップを含む、請求項1に記載の方法。
- 前記シード層を選択的に硬化させるステップが、前記シード層の選択された部分にわたってレーザをラスタライズするステップを含む、請求項4に記載の方法。
- 前記めっきするステップが、前記複数のフィーチャの中に導電材料を無電解めっきするステップを含む、請求項1に記載の方法。
- 携帯電話、セットトップボックス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、ハンドヘルドパーソナル通信システム(PCS)ユニット、ポータブルデータユニット、および固定ロケーションデータユニットの少なくとも1つの中に前記複数のフィーチャを組み込むステップをさらに含む、請求項1に記載の方法。
- 複数の開口部を有する誘電体層と、
前記複数の開口部の底部面の上のシード層と、
前記複数の開口部を実質的に充填している導電材料と
を含む装置。 - 前記シード層が、硬化した触媒インクを含む、請求項8に記載の装置。
- 前記導電材料が、電着させた銅、および、電着させたニッケルの少なくとも1つを含む、請求項8に記載の装置。
- 前記誘電体層が、シリコン、ゲルマニウム、砒化ガリウム、酸化マグネシウム、二酸化アルミニウム、二酸化シリコン、および有機薄膜ベース材料の少なくとも1つを含む基板の上にある、請求項8に記載の装置。
- 前記複数の開口部が、トレンチ、面、およびパッドの少なくとも1つを含む、請求項8に記載の装置。
- 携帯電話、セットトップボックス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、ハンドヘルドパーソナル通信システム(PCS)ユニット、ポータブルデータユニット、および固定ロケーションデータユニットの少なくとも1つに組み込まれた、請求項8に記載の装置。
- 誘電体材料の中に複数のフィーチャを形成するステップと、
前記誘電体材料の上と、前記複数のフィーチャの中とにシード層を堆積させるステップと、
前記複数のフィーチャの中の前記シード層の一部を選択的に処理するステップと、
処理されていないシード層部分を除去するステップと、
前記複数のフィーチャを選択的に充填するために、処理されたシード層部分にめっきするステップと
を含む方法。 - 前記シード層が触媒インクを含む、請求項14に記載の方法。
- 前記シード層を選択的に処理するステップが、前記シード層を選択的に硬化させるステップを含む、請求項14に記載の方法。
- 前記シード層を選択的に硬化させるステップが、前記シード層の選択された部分にわたってレーザをラスタライズするステップを含む、請求項14に記載の方法。
- 携帯電話、セットトップボックス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、ハンドヘルドパーソナル通信システム(PCS)ユニット、ポータブルデータユニット、および固定ロケーションデータユニットの少なくとも1つに前記複数のフィーチャを組み込むステップをさらに含む、請求項14に記載の方法。
- 複数の開口部を有する、基板上の誘電体層と、
前記複数の開口部の底部面の上に配置されている、導電材料を電気めっきするための手段と、
前記複数の開口部を実質的に充填している、前記電気めっきするための手段の上の導電材料と
を含む装置。 - 前記基板が、携帯電話、セットトップボックス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、ハンドヘルドパーソナル通信システム(PCS)ユニット、ポータブルデータユニット、および固定ロケーションデータユニットの少なくとも1つに組み込まれている、請求項19に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/958,638 | 2010-12-02 | ||
US12/958,638 US8703602B2 (en) | 2010-12-02 | 2010-12-02 | Selective seed layer treatment for feature plating |
PCT/US2011/063163 WO2012075450A1 (en) | 2010-12-02 | 2011-12-02 | Selective seed layer treatment for feature plating |
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JP2014204632A Active JP6113130B2 (ja) | 2010-12-02 | 2014-10-03 | フィーチャのめっきのための選択的なシード層の処理 |
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US (1) | US8703602B2 (ja) |
EP (1) | EP2647266A1 (ja) |
JP (2) | JP2014503999A (ja) |
KR (2) | KR20130126947A (ja) |
CN (2) | CN103222350B (ja) |
WO (1) | WO2012075450A1 (ja) |
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US20140246226A1 (en) * | 2013-03-04 | 2014-09-04 | Uni-Pixel Displays, Inc. | Method of fabricating copper-nickel micro mesh conductors |
CN104311873B (zh) * | 2014-09-04 | 2015-12-02 | 比亚迪股份有限公司 | 掺杂的氧化锡的应用及聚合物组合物和成型体及油墨组合物和表面金属化方法 |
WO2019022715A1 (en) * | 2017-07-25 | 2019-01-31 | Intel Corporation | IMPROVED DIELECTRIC MATERIALS FOR SEMICONDUCTOR DEVICES |
US20230386833A1 (en) * | 2022-05-25 | 2023-11-30 | Applied Materials, Inc. | Selective metal removal with flowable polymer |
CN115164571A (zh) * | 2022-06-18 | 2022-10-11 | 黑龙江省农业机械工程科学研究院佳木斯分院 | 一种中药材种子初选设备 |
TWI827169B (zh) * | 2022-07-29 | 2023-12-21 | 群創光電股份有限公司 | 電子裝置的製造方法 |
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JPH08222834A (ja) * | 1995-02-13 | 1996-08-30 | Toppan Printing Co Ltd | 配線回路の形成方法および多層配線回路基板の製造方法 |
US20030180448A1 (en) * | 2002-03-21 | 2003-09-25 | T.L.M. Advanced Laser Technology Ltd. | Method for fabrication of printed circuit boards |
JP2004342824A (ja) * | 2003-05-15 | 2004-12-02 | Taiyo Ink Mfg Ltd | 導体パターンの形成方法 |
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Also Published As
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CN106211605A (zh) | 2016-12-07 |
EP2647266A1 (en) | 2013-10-09 |
CN103222350A (zh) | 2013-07-24 |
CN106211605B (zh) | 2019-02-22 |
US8703602B2 (en) | 2014-04-22 |
JP2015029133A (ja) | 2015-02-12 |
KR20130126947A (ko) | 2013-11-21 |
KR20160027221A (ko) | 2016-03-09 |
US20120139112A1 (en) | 2012-06-07 |
CN103222350B (zh) | 2016-08-17 |
WO2012075450A1 (en) | 2012-06-07 |
JP6113130B2 (ja) | 2017-04-12 |
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