JP2014241431A - Method of manufacturing light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device capable of achieving higher output and higher luminance by improving heat resistance.SOLUTION: A plurality of light-emitting elements 12 comprising LEDs are mounted on a substrate 11, and a wavelength conversion member 16 is arranged above the light-emitting elements 12 with a space 15 between itself and the light-emitting elements 12. The wavelength conversion member 16 contains a particulate phosphor material and a binder. The binder is obtained by subjecting a binder raw material containing at least one selected from a group consisting of an oxide precursor which becomes an oxide by hydrolysis or oxidation, a silicic acid compound, silica, and amorphous silica to either a reaction at room temperature or a heat treatment at a temperature of 500°C or lower.

Description

  The present invention relates to a method for manufacturing a light emitting device using a phosphor material.

  As a light emitting device using a phosphor, for example, a device in which a phosphor is dispersed in an epoxy resin or a silicone resin so as to come into contact with an LED or an LD is known (for example, Patent Document 1 to Patent Document 1). 3). However, in this light emitting device, it is difficult to increase the output because the epoxy resin or silicone resin deteriorates, deforms, or peels off as the output of the LED or LD increases or the LED or LD generates heat. There was a problem.

  As a solution, a light emitting device in which a phosphor is sealed with glass instead of an epoxy resin or a silicone resin has been developed (see, for example, Patent Document 4 to Patent Document 6). According to this light-emitting device, structural heat resistance can be improved by using an inorganic material for the dispersion medium. However, it is difficult to soften a general low-melting glass to such an extent that the phosphor can be dispersed unless it is heated at substantially 500 ° C. or higher (see Examples in Patent Document 5). For example, although it is possible to lower the melting point by adding a heavy metal such as lead, there are very few applications where these elements are allowed from the viewpoint of the influence on the environment and the human body. Therefore, depending on the phosphor, there is a problem that the performance may deteriorate due to the influence of heat.

  In addition, when resin is used for the dispersion medium, even if it is arranged so as to be in contact with the LED or LD, the flexibility unique to the resin is good for following the shape, and the adhesion to any material is high. On the other hand, since inorganic materials are hard and have poor affinity with other materials, it is easy to accumulate stress due to a difference in thermal expansion or the like, and adhesion is difficult to obtain. Therefore, there is a problem that it is very difficult to disperse the phosphor in an inorganic material and apply and fix the phosphor directly on the LED element, LD element or substrate. In addition, when an inorganic material is used, heat treatment at a high temperature is required in the production process, and thus it is not realistic in production to bond the LED element or LD element and the inorganic material (particularly glass).

  Therefore, a light emitting device of a type in which a phosphor is dispersed in a resin and LED or LD that emits heat together with light emission and a phosphor that performs wavelength conversion by receiving light from the LED or LD is arranged at a distance is disclosed. (For example, see Patent Document 7). With this method, the influence of heat can be reduced by increasing the distance between the LED element or LD element and the phosphor, and the thermal design restrictions are reduced.

Japanese Patent No. 3364229 Japanese Patent No. 38241717 JP 2011-204718 A JP 2009-91546 A JP 2008-143978 A JP 2008-115223 A Japanese Patent No. 4562828

  However, if the distance between the LED element or LD element and the phosphor is greatly increased, a corresponding space is required. For this reason, there is a problem that the LED module or the LD module becomes large in size and uses are limited. In order to reduce the size of the LED module or LD module, it is necessary to bring the phosphor as close as possible to the LED element or LD element. However, if the phosphor is brought closer, the energy density per unit volume / unit area becomes higher and the influence of heat cannot be eliminated. That is, it has been difficult to reduce the influence of heat and downsize the LED module or the LD module.

  The present invention has been made based on such problems, and an object of the present invention is to provide a method for manufacturing a light-emitting device that can improve heat resistance and can be miniaturized.

  A method for manufacturing a light emitting device of the present invention includes a light emitting element and a wavelength conversion member disposed with a space between the light emitting element, the wavelength conversion member including a particulate phosphor material, a binder, The wavelength conversion member is formed by applying a raw material mixture containing a phosphor material and a binder raw material on one surface of a forming substrate by a printing method, and reacting the binder raw material at room temperature. Or formed by heat treatment at a temperature of 500 ° C. or less, and the binder raw material is selected from the group consisting of oxide precursors that become oxides by hydrolysis or oxidation, silicic acid compounds, silica, and amorphous silica It contains at least one kind.

  According to the method for manufacturing a light emitting device of the present invention, the light emitting element and the wavelength conversion member are arranged with a space in between, and an inorganic material is mainly used for the binder of the wavelength conversion member. The heat resistance against the generated heat can be improved, high output and high luminance can be achieved, and the size can be reduced. In addition, the wavelength conversion member is formed by applying a raw material mixture containing a phosphor material and a binder raw material on one surface of a forming substrate by a printing method and reacting the binder raw material at room temperature, or heat treatment at a temperature of 500 ° C. or less. Therefore, it can be formed even at a low temperature, and the characteristic deterioration of the phosphor material whose characteristics deteriorate at a high temperature can be suppressed.

  Further, if the distance between the light emitting element and the wavelength conversion member is 1 mm or more, the influence of heat generated from the light emitting element can be effectively reduced.

It is a figure showing the structure of the light-emitting device which concerns on one embodiment of this invention. It is a characteristic view showing the time-dependent change of the brightness | luminance in the exposure test in a high-temperature, high-humidity environment of 85 degreeC and 85% RH. It is a characteristic view showing the relationship between the exposure temperature in the exposure test in a dry high temperature environment, and the luminescent brightness after 24 hours. It is a characteristic view showing the time-dependent change of the brightness | luminance in the exposure test in a 150 degreeC dry high temperature environment. It is a characteristic view showing the time-dependent change of the brightness | luminance in the exposure test in a 200 degreeC dry high temperature environment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a configuration of a light emitting device 10 according to an embodiment of the present invention. In the light emitting device 10, for example, a plurality of light emitting elements 12 made of LEDs are mounted on a substrate 11. For the light emitting element 12, for example, an element that emits ultraviolet light, blue light, or green light as excitation light is used, and among them, an element that emits blue light is preferable. This is because white can be easily obtained and ultraviolet light has an effect of deteriorating surrounding members, while blue light has a small effect. For example, the light emitting element 12 is electrically connected to a wiring (not shown) formed on the substrate 11 by a wire 13. For example, a reflector frame 14 is formed around the light emitting element 12 so as to surround the whole.

  On the light emitting element 12, for example, a wavelength conversion member 16 is disposed with a space 15 between the light emitting element 12. The wavelength conversion member 16 is formed on, for example, one surface of the forming substrate 17, and the forming substrate 17 is disposed on the light emitting element 12 so that the wavelength converting member 16 is on the light emitting element 12 side, for example. Has been. For example, the distance between the light emitting element 12 and the wavelength conversion member 16 is preferably 1 mm or more, and more preferably 2 mm or more. This is because the influence of heat generated from the light emitting element 12 can be effectively reduced. Moreover, it is preferable that the distance between the light emitting element 12 and the wavelength conversion member 16 is less than 50 mm, for example. This is because the influence of heat generated from the light emitting element 12 becomes sufficiently small, and conversely, the apparatus becomes large.

  The wavelength conversion member 16 includes, for example, a particulate phosphor material and a binder that adheres the phosphor material, and may include a filler as necessary.

The phosphor material includes, for example, phosphor particles, and a coating layer may be formed on the surface of the phosphor particles. Examples of the phosphor particles include blue phosphors such as BaMgAl ₁₀ O ₁₇ : Eu, ZnS: Ag, Cl, BaAl ₂ S ₄ : Eu or CaMgSi ₂ O ₆ : Eu, Zn ₂ SiO ₄ : Mn, (Y , Gd) BO ₃ : Tb, ZnS: Cu, Al, (M1) ₂ SiO ₄ : Eu, (M1) (M2) ₂ S: Eu, (M3) ₃ Al ₅ O ₁₂ : Ce, SiAlON: Eu, CaSiAlON : Eu, (M1) Si ₂ O ₂ N: Eu or (Ba, Sr, Mg) ₂ SiO ₄ : Yellow or green phosphor such as Eu, Mn, (M1) ₃ SiO ₅ : Eu, (M1) S: Eu or (M1) (M2) ₂ S: Eu, (Y, Gd) BO ₃ : Eu, Y ₂ O ₂ S: Eu, (M1) ₂ Si ₅ N ₈ : Eu, (M1) AlSiN ₃ : Eu or YP O _4: yellow such as Eu, orange or red phosphor can be cited. In the above chemical formula, M1 includes at least one of the group consisting of Ba, Ca, Sr, and Mg, M2 includes at least one of Ga and Al, and M3 includes Y, Gd, At least one of the group consisting of Lu and Te is included.

Among them, the phosphor particles are (M3) ₃ Al ₅ O ₁₂ : Ce, SiAlON: Eu, CaSiAlON: Eu, (M1) Si ₂ O ₂ N: Eu, (M1) ₂ Si ₅ N ₈ : Eu, (M1 It is preferable that AlSiN ₃ : Eu, (M1) ₂ SiO ₄ : Eu, (M1) ₃ SiO ₅ : Eu, (M1) S: Eu or (M1) (M2) ₂ S: Eu. M1, M2 and M3 are as described above. The phosphor particles are selected according to the type of the light emitting element 12 and the like. As the phosphor material, one kind or two or more kinds of phosphor particles are used. When plural kinds of phosphor particles are used, they may be mixed and used, or may be laminated in a plurality of layers. The phosphors may be arranged side by side. The particle diameter of the phosphor particles is preferably about 5 to 20 μm because the forward scattering increases. This is because if the average particle diameter is smaller than 5 μm, scattering in all directions tends to occur, and if the average particle diameter exceeds 20 μm, it becomes difficult to form the wavelength conversion member 16 by coating as described later.

Examples of the phosphor particle coating layer include rare earth oxides, zirconium oxides, titanium oxides, zinc oxides, aluminum oxides, yttrium / aluminum composite oxides such as yttrium / aluminum / garnet, magnesium oxide, and MgAl ₂ O _4. It is preferable that at least one metal oxide selected from the group consisting of aluminum and magnesium composite oxides is contained as a main component. This is because characteristics such as water resistance and ultraviolet light resistance can be improved. Among these, rare earth oxides are preferable, rare earth oxides containing at least one element selected from the group consisting of yttrium, gadolinium, cerium and lanthanum are more preferable, and Y ₂ O ₃ is particularly preferable. This is because higher effects can be obtained and costs can be suppressed.

  The binder is prepared by reacting a binder raw material containing at least one member selected from the group consisting of an oxide precursor that becomes an oxide by hydrolysis or oxidation, a silicic acid compound, silica, and amorphous silica at room temperature, or It was obtained by heat treatment at a temperature of 500 ° C. or lower. Preferable examples of the oxide precursor include perhydropolysilazane, ethyl silicate, methyl silicate, aluminum phosphate, aluminum acetylacetate, yttrium acetylacetate, aluminum alcoat, and yttrium citrate. This is because these oxide precursors are easily converted into oxides by hydrolysis or oxidation at room temperature or heat treatment, and can function as binders. Note that the binder does not have to be completely oxidized by the reaction of the oxide precursor, and may contain an unreacted part or an incompletely reacted part.

  Among them, as a binder, a binder raw material containing at least one member selected from the group consisting of a silicon oxide precursor that becomes silicon oxide by hydrolysis or oxidation, a silicate compound, silica, and amorphous silica is reacted at room temperature. Or what was obtained by heat-processing at the temperature of 500 degrees C or less is preferable. This is because the light transmittance from the issuing element 12 can be increased. As the silicon oxide precursor, for example, those mainly composed of perhydropolysilazane, ethyl silicate, and methyl silicate are preferable.

  Moreover, as a silicate compound, sodium silicate is mentioned preferably, for example. As the silicic acid compound, a dehydrated one or a hydrate may be used. As silica or amorphous silica, for example, nano-sized ultrafine particle powder is used. For example, it is preferable to use ultrafine particle powder having an average particle size of 5 nm or more and 100 nm or less as a primary particle size, and ultrafine particles of 5 nm or more and 50 nm or less. It is more preferable to use powder. These silicic acid compounds, silica, or amorphous silica can be solidified by dissolving or dispersing in a solvent, heat treatment and drying, and function as a binder.

  The heat treatment temperature of the binder raw material is preferably 500 ° C. or less in order to reduce the thermal influence on the forming base material 17 and the phosphor material, and 300 ° C. or less when the thermal influence needs to be further reduced. It is more preferable if it is set to 200 ° C. or less. Further, it is more preferable that the binder raw material is reacted at room temperature because there is no thermal influence. It is preferable to select the type of the binder raw material according to the heat resistance characteristics of the forming substrate 17 and the phosphor material to be used, and thereby adjust whether the binder raw material is reacted at room temperature or how many times the heat treatment is performed. In addition, the atmosphere during the heat treatment is preferably a non-oxidizing atmosphere such as a nitrogen atmosphere when the phosphor material is easily oxidized and deteriorated by heat. As described above, in the present embodiment, it is possible to perform the heat treatment of the binder at a low temperature even for the phosphor material whose characteristics deteriorate at a high temperature, and further, the phosphor material is covered with the oxide after the heat treatment. Therefore, even if the phosphor material is exposed to a high temperature state, the deterioration of characteristics can be suppressed.

  The filler is preferably made of a light-transmitting inorganic material, for example, silicon oxide particles, aluminum oxide particles, or zirconium oxide particles. More preferably, silicon oxide particles are preferable, and the form may be crystal or glass. Further, it is more preferable that the filler is made of the same material as the binder. This is because the refractive index is the same as that of the binder, and scattering can be reduced. The average particle diameter of the filler is preferably about 10 μm to 20 μm, which is the same as the average particle diameter of the phosphor particles. This is because the forward scattering is large and the distance between the phosphor particles is easily controlled.

  The film thickness of the wavelength conversion member 16 is preferably, for example, from 30 μm to 1 mm, more preferably from 50 μm to 500 μm, and even more preferably from 50 μm to 200 μm. This is because when the thickness is smaller than 30 μm, the amount of the phosphor material is reduced and the light emission luminance is lowered. In addition, when the thickness is greater than 1 mm, light scattering / absorption increases, making it difficult to extract light to the outside.

  The formation base material 17 is comprised by what has translucency, such as glass, for example. As a characteristic of glass, for example, it is preferable that the light transmittance is 90% or more in a wavelength range of 400 nm to 800 nm. The formation substrate 17 may have any shape, and may be a circular plate shape or a square plate shape. Moreover, although the planar shape was shown in FIG. 1, a concave shape, a convex shape, or a light bulb shape may be used.

  The wavelength conversion member 16 is, for example, coated on one surface of the forming substrate 17 with a raw material mixture containing a phosphor material and a binder raw material, and the binder raw material is reacted at room temperature, or heat treated at a temperature of 500 ° C. or lower. It is formed by doing. Specifically, first, for example, one or two or more phosphor materials, a binder raw material, a dilution solvent as necessary, and a filler as necessary are mixed to form a paste-like raw material mixture, It is applied to one surface of the forming substrate 17 by, for example, a printing method such as screen printing, a dispenser method, or a spray method. In particular, the printing method is preferable because the slurry viscosity range that can be handled is wide. Moreover, you may repeat application | coating until it becomes a required film thickness. Next, for example, the applied raw material mixture is dried to remove the diluted solvent. In that case, you may heat in the range of 500 degrees C or less as needed, More preferably 300 degrees C or less, Furthermore, 200 degrees C or less. Thereby, a binder raw material reacts by normal temperature or heat processing, or solidifies by heat processing.

  As described above, according to the present embodiment, the light emitting element 12 and the wavelength conversion member 16 are arranged with the space 15 therebetween, and an inorganic material is mainly used for the binder of the wavelength conversion member 16. The heat resistance against heat generated from the light-emitting element can be improved, high output and high luminance can be achieved, and the size can be reduced. Further, since the binder of the wavelength conversion member 16 is obtained by reacting at normal temperature or heat-treating at a temperature of 500 ° C. or less, it can be formed even at low temperatures, and suppresses deterioration of the characteristics of the phosphor material whose characteristics deteriorate at high temperatures. be able to.

  Furthermore, the wavelength conversion member 16 applies a raw material mixture containing a phosphor material and a binder raw material to one surface of the forming substrate 17 and reacts the binder raw material at room temperature or heat-treats it at a temperature of 500 ° C. or lower. By doing so, it can be easily formed by adhering to the forming substrate at a low temperature.

(Production of light-emitting devices of Examples 1 to 4)
First, a phosphor material, a binder raw material, a filler, and a dilution solvent were mixed to prepare a raw material mixture. As the phosphor material, phosphor particles made of Y ₃ Al ₅ O ₁₂ : Ce having an average particle diameter of about 15 μm and phosphor particles made of CaSrS: Eu were used. As a binder raw material, ethyl silicate in Example 1, perhydropolysilazane in Example 2, sodium silicate hydrate in Example 3, or ultrafine powder of silica or amorphous silica in Example 4 was suspended with a solvent. Each turbid product was used. As the filler, silicon dioxide particles having an average particle diameter of about 15 μm were used. Terpineol was used as a dilution solvent. Subsequently, the produced raw material mixture was printed on one surface of the forming substrate 17 made of a transparent glass plate, and applied to a required thickness. After that, the diluted solvent was removed by drying at 150 ° C. Using each wavelength conversion member 16 obtained in this manner, the light emitting device 10 as shown in FIG. 1 was produced. A blue LED was used for the light emitting element 12.

(Production of light-emitting device of Comparative Example 1)
As Comparative Example 1, except that a silicon resin was used instead of the silicon oxide precursor, a phosphor material and a silicone resin were mixed, applied to one surface of the forming substrate by printing, and dried to form a wavelength conversion member. A light emitting device was fabricated in the same manner as in Examples 1 to 4.

(Evaluation method 1)
About the wavelength conversion member 16 produced in Examples 1-4 and the comparative example 1, the exposure test in 85 degreeC and 85% RH high temperature high humidity environment was done, and the time-dependent change of the brightness | luminance was investigated. Of the obtained results, the results of Example 1 and Comparative Example 1 are shown in FIG. In FIG. 2, the vertical axis represents relative luminance values when the initial luminance is 100. The definition of luminance is a value of the peak height of the spectrum of light after being excited by the blue LED and wavelength-converted by the wavelength conversion member 16. In addition, in FIG. 2, although the result of Example 1 was shown as a representative, the same result was obtained also about Examples 2-4.

(Evaluation result 1)
In Examples 1 to 4, the luminance of 95% or more was maintained after 2000 hours, whereas in Comparative Example 1, the luminance maintenance rate gradually decreased after 20 hours, and after 2000 hours. The luminance maintenance rate decreased to 83%.

(Evaluation method 2)
The wavelength conversion member 16 of Examples 1 to 4 and Comparative Example 1 was heated in an atmospheric oven, a dry high temperature environment exposure test from 100 ° C. to 500 ° C. was performed, and a change in luminance with time was examined. Further, since there is a possibility that the wavelength conversion member 16 breaks in a high temperature region exceeding 200 ° C., visual appearance confirmation was also performed at the same time. The exposure time at each temperature was 24 hours, and long-term exposure was performed up to 2000 hours only at 150 ° C. and 200 ° C. close to the upper limit of the practical temperature range. Of the obtained results, the results of Example 1 and Comparative Example 1 are shown in FIGS. FIG. 3 shows the relationship between the exposure temperature and the luminance after 24 hours exposure, FIG. 4 shows the results of a dry high temperature environment exposure test at 150 ° C., and FIG. 5 shows the dry high temperature environment at 200 ° C. It is the result of an exposure test. 3 to 5, the vertical axis represents relative luminance values when the initial luminance is 100. 3 to 5 show the results of Example 1 as representatives, but similar results were obtained for Examples 2 to 4.

(Evaluation result 2)
As shown in FIG. 3, in the 24-hour exposure test at each temperature, in Comparative Example 1, the luminance maintenance rate decreases as the temperature increases, and the wavelength conversion member peels off due to a chemical change due to heat at 300 ° C. or higher. did. On the other hand, in Examples 1 to 4, there was no change in appearance, and no decrease in luminance maintenance rate was observed.

  As shown in FIGS. 4 and 5, in the long-term exposure test up to 1000 hours at 150 ° C. and 200 ° C., Examples 1 to 4 showed no change in both 150 ° C. and 200 ° C., whereas the comparative example No. 1 shows a gradual decrease in luminance maintenance rate after 50 hours at 150 ° C., a decrease in luminance maintenance rate to 87% after 2000 hours, and a decrease in luminance maintenance rate after 10 hours at 200 ° C. After 1000 hours, the luminance maintenance rate decreased to 67%, and when the appearance was confirmed after 1200 hours, the wavelength conversion member peeled off due to a chemical change caused by heat.

(Examples 5 to 40, Comparative Examples 2 to 7)
First, a phosphor material, a binder raw material, a dilution solvent in some cases, and a filler in some cases were mixed to produce a raw material mixture. The phosphor material of the phosphor material in each example and each comparative example, the average particle diameter (particle size) of the phosphor particles, the addition amount, the material of the coating layer, the material of the filler, the average particle diameter (particle diameter) Tables 1 to 4 show the addition amount and the material and addition amount of the binder raw material. As the phosphor material, both or one of the phosphor material A and the phosphor material B were used. The phosphor material A did not form a coating layer on the phosphor particles, and the phosphor material B optionally formed a coating layer on the phosphor particles. Α-Terpineol was used as a dilution solvent.

  Next, the prepared raw material mixture was applied to one surface of the forming substrate 17 made of a glass plate, and the binder raw material was reacted at a heat treatment or at room temperature to obtain the wavelength conversion member 16 having a predetermined thickness. Tables 2 and 4 show the coating method of the raw material mixture, the heat treatment temperature, and the thickness of the wavelength conversion member 16 in each Example and each Comparative Example. The thickness of the wavelength conversion member 16 is the thickness after heat treatment or reaction at room temperature.

  With respect to each of the wavelength conversion members 16 thus obtained, initial light emission luminance was examined as an initial characteristic. In addition, as a high-temperature and high-humidity test, an exposure test was performed in a high-temperature and high-humidity environment of 85 ° C. and 85% RH, and the reduction rate of the emission luminance after 2000 hours was examined. Furthermore, as a dry high temperature test, an exposure test in a dry high temperature environment of 150 ° C. or 200 ° C. was performed, and the reduction rate of the emission luminance after 2000 hours was examined. The light emission luminance of each wavelength conversion member 16 is obtained by installing each wavelength conversion material 16 in the light emitting device 10 as shown in FIG. 1 and applying excitation light from a 300 W blue LED element, and the light emission luminance at that time is measured by a power meter. It was measured. The distance between the wavelength conversion member 16 and the light emitting element 12 was 10 mm.

  The obtained results are shown in Tables 5 and 6. In Tables 5 and 6, the light emission luminance of the initial characteristics is the relative light emission luminance when the light emission luminance of Example 14 is 100. Moreover, the reduction rate of the light emission luminance in the high temperature and high humidity test and the dry high temperature test is a reduction rate from the light emission luminance of the initial characteristics in each Example and each Comparative Example.

  As shown in Tables 5 and 6, according to this example, the relative luminance as an initial characteristic was 80% or more, but in Comparative Examples 3 to 7 heat-treated at 550 ° C. or more, it was 70% or less. It was low. Further, in Comparative Example 2 using a silicone resin, the emission luminance decrease rate in the high temperature and high humidity test is 15%, the emission luminance decrease rate in the high temperature drying test at 150 ° C. is 12%, and in the drying high temperature test at 200 ° C. after 1200 hours. The wavelength conversion member was peeled off, and the reduction rate of light emission luminance after 1000 hours was 33%. On the other hand, according to this example, the emission luminance reduction rate is greatly improved to 3% or less in any of the high temperature and high humidity test, the high temperature drying test at 150 ° C., and the high temperature drying test at 200 ° C. I was able to.

  Further, for the wavelength conversion member 16 of Example 5 and Comparative Example 2, the distance between the wavelength conversion member 16 and the light emitting element 12 was further changed to 1 mm, 2 mm, 5 mm, or 10 mm, as shown in FIG. After the light emitting device 10 was manufactured and light was continuously emitted for 5000 hours, the relative light emission luminance reduction rate from the light emission luminance of the initial characteristics was examined. The results obtained are shown in Table 7.

  As shown in Table 7, according to Example 5, even when the distance between the wavelength conversion member 16 and the light emitting element 12 was 1 mm, the relative light emission luminance reduction rate was 2%, whereas in Comparative Example 2, Unless the distance was 10 mm, the relative light emission luminance reduction rate could not be reduced to 2% or less.

(Summary)
From the above results, it was found that the heat resistance can be greatly improved according to this example.

  The present invention has been described with reference to the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above-described embodiment, the structure of the light-emitting device 10 has been specifically described. However, the light-emitting device 10 may have another structure. Moreover, although the said embodiment demonstrated the case where the wavelength conversion member 16 was apply | coated and formed on one surface of the formation base material 17, you may form by another method. For example, the wavelength conversion member 16 may be formed by putting the raw material mixture in a mold having a desired shape and oxidizing it, and may be disposed after being removed from the mold.

  It can be used for light emitting devices such as LEDs or LDs.

  DESCRIPTION OF SYMBOLS 10 ... Light-emitting device, 11 ... Base | substrate, 12 ... Fluorescent element, 13 ... Wire, 14 ... Reflector frame, 15 ... Space, 16 ... Wavelength conversion member, 17 ... Formation base material

Claims (10)

A light-emitting element and a wavelength conversion member disposed with a space between the light-emitting element, wherein the wavelength conversion member is a method for manufacturing a light-emitting device including a particulate phosphor material and a binder. And
The wavelength conversion member is formed by applying a raw material mixture containing the phosphor material and a binder raw material on one surface of a forming substrate by a printing method, and reacting the binder raw material at room temperature, or at a temperature of 500 ° C. or lower. Formed by heat treatment,
The binder raw material includes at least one member selected from the group consisting of an oxide precursor that becomes an oxide by hydrolysis or oxidation, a silicate compound, silica, and amorphous silica. .   The method for manufacturing a light emitting device according to claim 1, wherein a distance between the light emitting element and the wavelength conversion member is 1 mm or more.   The method for manufacturing a light emitting device according to claim 1 or 2, wherein a distance between the light emitting element and the wavelength conversion member is 2 mm or more and 50 mm or less.   4. The method of manufacturing a light emitting device according to claim 1, wherein the phosphor material includes phosphor particles, and an average particle diameter of the phosphor particles is 5 μm to 20 μm. 5. .   5. The method for manufacturing a light emitting device according to claim 1, wherein the wavelength conversion member has a thickness of 30 μm to 1 mm.   The manufacturing method of the light-emitting device according to claim 1, wherein the phosphor material includes phosphor particles, and a coating layer is formed on a surface of the phosphor particles. Method.   The method for manufacturing a light emitting device according to claim 6, wherein the coating layer contains yttrium oxide.   The method for manufacturing a light emitting device according to claim 1, wherein the raw material mixture further contains a filler.   The method for manufacturing a light emitting device according to claim 8, wherein the filler is made of the same material as the binder.   The method for manufacturing a light emitting device according to claim 8 or 9, wherein the filler has an average particle size of 10 µm to 20 µm.

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