JP2014194068A5 - Copper foil with carrier, method for producing copper-clad laminate, and method for producing printed wiring board - Google Patents
Copper foil with carrier, method for producing copper-clad laminate, and method for producing printed wiring board Download PDFInfo
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- JP2014194068A5 JP2014194068A5 JP2013187782A JP2013187782A JP2014194068A5 JP 2014194068 A5 JP2014194068 A5 JP 2014194068A5 JP 2013187782 A JP2013187782 A JP 2013187782A JP 2013187782 A JP2013187782 A JP 2013187782A JP 2014194068 A5 JP2014194068 A5 JP 2014194068A5
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- 239000000969 carrier Substances 0.000 title claims 23
- 239000011889 copper foil Substances 0.000 title claims 19
- 238000004519 manufacturing process Methods 0.000 title claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 36
- 229910052802 copper Inorganic materials 0.000 claims 36
- 239000010949 copper Substances 0.000 claims 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 31
- 229910052759 nickel Inorganic materials 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 9
- -1 nickel-zinc Chemical compound 0.000 claims 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 7
- 229910052804 chromium Inorganic materials 0.000 claims 7
- 239000011651 chromium Substances 0.000 claims 7
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 5
- 239000011701 zinc Substances 0.000 claims 5
- 229910052725 zinc Inorganic materials 0.000 claims 5
- 238000010030 laminating Methods 0.000 claims 4
- 238000007788 roughening Methods 0.000 claims 4
- 229910001297 Zn alloy Inorganic materials 0.000 claims 3
- 239000000654 additive Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
- 229910052803 cobalt Inorganic materials 0.000 claims 3
- 239000010941 cobalt Substances 0.000 claims 3
- 230000001808 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 3
- 229910000077 silane Inorganic materials 0.000 claims 3
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 claims 3
- 229910000531 Co alloy Inorganic materials 0.000 claims 2
- 229910000599 Cr alloy Inorganic materials 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 239000000788 chromium alloy Substances 0.000 claims 2
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 125000004430 oxygen atoms Chemical group O* 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N Chromium(III) oxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims 1
- 229910001096 P alloy Inorganic materials 0.000 claims 1
- 230000000996 additive Effects 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 1
Claims (15)
前記極薄銅層表面には粗化処理層を有し、
以下の（Ａ）〜（Ｃ）のいずれか一つ以上を満たし、
（Ａ）前記極薄銅層の粗化処理層表面を非接触式粗さ計で測定したＲｚが１．６μｍ以下である、
（Ｂ）前記極薄銅層の粗化処理層表面を非接触式粗さ計で測定したＲａが０．３μｍ以下である、
（Ｃ）前記極薄銅層の粗化処理層表面を非接触式粗さ計で測定したＲｔが２．３μｍ以下である、
前記中間層はＮｉを含み、
前記極薄銅層に絶縁基板を大気中、圧力：２０ｋｇｆ／ｃｍ2、２２０℃×２時間の条件下で熱圧着させ、ＪＩＳ Ｃ ６４７１に準拠して前記極薄銅層を剥がしたとき、ＸＰＳによる表面からの深さ方向分析から得られた深さ方向（ｘ：単位ｎｍ）のクロムの原子濃度（％）をe(x)とし、亜鉛の原子濃度（％）をf(x)とし、ニッケルの原子濃度（％）をg(x)とし、銅の原子濃度（％）をh(x)とし、酸素の合計原子濃度（％）をｉ(x)とし、炭素の原子濃度（％）をｊ(x)とし、その他の原子濃度（％）をk（x）とすると、
前記極薄銅層の前記中間層側の表面からの深さ方向分析の区間［０、１.０］において、∫g(x)dx/(∫e(x)dx +∫f(x)dx + ∫g(x)dx + ∫h(x)dx + ∫i(x)dx + ∫j(x)dx+ ∫k(x)dx )が２０.０％以下を満たすキャリア付銅箔。 A carrier-attached copper foil having a carrier, an intermediate layer, and an ultrathin copper layer in this order,
The ultrathin copper layer surface has a roughening treatment layer ,
Satisfy any one or more of the following (A) to (C),
(A) Rz measured by a non-contact type roughness meter on the roughened layer surface of the ultrathin copper layer is 1.6 μm or less .
(B) Ra measured by the non-contact type roughness meter on the roughened layer surface of the ultrathin copper layer is 0.3 μm or less.
(C) Rt measured by a non-contact type roughness meter on the roughened layer surface of the ultrathin copper layer is 2.3 μm or less.
The intermediate layer includes Ni;
When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours, and the ultrathin copper layer is peeled off according to JIS C 6471, XPS E (x) is the atomic concentration (%) of chromium in the depth direction (x: unit nm), and f (x) is the atomic concentration (%) of zinc. The atomic concentration (%) of nickel is g (x), the atomic concentration (%) of copper is h (x), the total atomic concentration (%) of oxygen is i (x), and the atomic concentration of carbon (%) Is j (x) and other atomic concentration (%) is k (x),
In the section [0, 1.0] in the depth direction analysis from the surface on the intermediate layer side of the ultrathin copper layer, ∫g (x) dx / (∫e (x) dx + ∫f (x) dx + ∫g (x) dx + ∫h (x) dx + ∫i (x) dx + ∫j (x) dx + ∫k (x) dx) satisfying 20.0% or less.
∫g(x)dx/(∫e(x)dx +∫f(x)dx + ∫g(x)dx + ∫h(x)dx + ∫i(x)dx + ∫j(x)dx+ ∫k(x)dx )が１０．０％以下を満たす請求項１に記載のキャリア付銅箔。 When the insulating substrate is thermocompression bonded to the ultrathin copper layer under the conditions of pressure: 20 kgf / cm 2 , 220 ° C. × 2 hours in the atmosphere, and the ultrathin copper layer is peeled off in accordance with JIS C 6471, In the section [1.0, 4.0] of the depth direction analysis from the surface of the intermediate layer side of the ultrathin copper layer,
∫g (x) dx / (∫e (x) dx + ∫f (x) dx + ∫g (x) dx + ∫h (x) dx + ∫i (x) dx + ∫j (x) dx + ∫ The copper foil with a carrier according to claim 1 , wherein k (x) dx) satisfies 10.0% or less.
（Ｄ）前記極薄銅層表面は、Ｓｓｋが−０．３〜０．３である、
（Ｅ）前記極薄銅層表面は、Ｓｋｕが２．７〜３．３である、
（Ｆ）極薄銅層表面の表面積比が１．０５〜１．５である、
（Ｇ）極薄銅層表面の面積６６５２４μｍ 2 当たりの体積が３０００００〜５０００００μｍ 3 である。 The copper foil with a carrier as described in any one of Claim 1 or 2 which satisfy | fills one or more of the following (D)-(G).
(D) The ultrathin copper layer surface has Ssk of −0.3 to 0.3 ,
(E) The ultra-thin copper layer surface has a Sku of 2.7 to 3.3.
(F) The surface area ratio of the ultrathin copper layer surface is 1.05-1.5,
(G) The volume per area 66524 μm 2 of the ultrathin copper layer surface is 300,000 to 500,000 μm 3 .
∫g(x)dx/(∫e(x)dx +∫f(x)dx + ∫g(x)dx + ∫h(x)dx + ∫i(x)dx + ∫j(x)dx+ ∫k(x)dx )が７．０％以下を満たす請求項１〜６のいずれか一項に記載のキャリア付銅箔。 When the insulating substrate is thermocompression bonded to the ultrathin copper layer under the conditions of pressure: 20 kgf / cm 2 , 220 ° C. × 2 hours in the atmosphere, and the ultrathin copper layer is peeled off in accordance with JIS C 6471, In the section [1.0, 4.0] of the depth direction analysis from the surface of the intermediate layer side of the ultrathin copper layer,
∫g (x) dx / (∫e (x) dx + ∫f (x) dx + ∫g (x) dx + ∫h (x) dx + ∫i (x) dx + ∫j (x) dx + ∫ The copper foil with a carrier according to any one of claims 1 to 6 , wherein k (x) dx) satisfies 7.0% or less.
前記極薄銅層の前記中間層側の表面からの深さ方向分析の区間［０、１.０］において、∫g(x)dx/(∫e(x)dx +∫f(x)dx + ∫g(x)dx + ∫h(x)dx + ∫i(x)dx + ∫j(x)dx+ ∫k(x)dx )が５.０％以下を満たす請求項１〜７のいずれか一項に記載のキャリア付銅箔。 When the ultra-thin copper layer was peeled off according to JIS C 6471, the atomic concentration (%) of chromium in the depth direction (x: unit nm) obtained from the depth direction analysis from the surface by XPS was expressed as e ( x), the atomic concentration (%) of zinc is f (x), the atomic concentration (%) of nickel is g (x), the atomic concentration (%) of copper is h (x), and the total oxygen atoms If the concentration (%) is i (x), the carbon atomic concentration (%) is j (x), and the other atomic concentration (%) is k (x),
In the section [0, 1.0] in the depth direction analysis from the surface on the intermediate layer side of the ultrathin copper layer, ∫g (x) dx / (∫e (x) dx + ∫f (x) dx + ∫g (x) dx + ∫h (x) dx + ∫i (x) dx + ∫j (x) dx + ∫k (x) dx) is any of claims 1-7 which satisfy the following 5.0% A copper foil with a carrier according to claim 1.
前記極薄銅層の前記中間層側の表面からの深さ方向分析の区間［１．０、４．０］において、∫g(x)dx/(∫e(x)dx +∫f(x)dx + ∫g(x)dx + ∫h(x)dx + ∫i(x)dx + ∫j(x)dx+ ∫k(x)dx )が１．０％以下又は０．１％以上又は０．１％以上１．０％以下のいずれかを満たす請求項１〜８のいずれか一項に記載のキャリア付銅箔。 When the ultra-thin copper layer was peeled off according to JIS C 6471, the atomic concentration (%) of chromium in the depth direction (x: unit nm) obtained from the depth direction analysis from the surface by XPS was expressed as e ( x), the atomic concentration (%) of zinc is f (x), the atomic concentration (%) of nickel is g (x), the atomic concentration (%) of copper is h (x), and the total oxygen atoms If the concentration (%) is i (x), the carbon atomic concentration (%) is j (x), and the other atomic concentration (%) is k (x),
In the section [1.0, 4.0] of the depth direction analysis from the surface on the intermediate layer side of the ultrathin copper layer, ∫g (x) dx / (∫e (x) dx + ∫f (x ) dx + ∫g (x) dx + ∫h (x) dx + ∫i (x) dx + ∫j (x) dx + ∫k (x) dx) is 1.0% or less or 0.1% or more The copper foil with a carrier according to any one of claims 1 to 8 , which satisfies any of 0.1% to 1.0% .
（Ｈ）前記中間層は、キャリア上にニッケルまたはニッケルを含む合金のいずれか１種の層、及びクロム、クロム合金、クロムの酸化物のいずれか１種以上を含む層がこの順で積層されて構成されている、
（Ｉ）前記（Ｈ）を満たし、且つ、前記クロム、クロム合金、クロムの酸化物のいずれか１種以上を含む層がクロメート処理層を含む、
（Ｊ）前記中間層は、亜鉛を含む、
（Ｋ）前記中間層は、前記キャリア上にニッケル、ニッケル−亜鉛合金、ニッケル−リン合金、ニッケル−コバルト合金のいずれか１種の層、及び亜鉛クロメート処理層、純クロメート処理層、クロムめっき層のいずれか１種の層がこの順で積層されて構成されている、
（Ｌ）前記中間層は、前記キャリア上に、
ニッケル層またはニッケル−亜鉛合金層、及び、亜鉛クロメート処理層がこの順で積層されて構成されている、又は、
ニッケル−亜鉛合金層、及び、純クロメート処理層または亜鉛クロメート処理層がこの順で積層されて構成されており、
前記中間層におけるニッケルの付着量が１００〜４００００μｇ／ｄｍ 2 、クロムの付着量が５〜１００μｇ／ｄｍ 2 、亜鉛の付着量が１〜７０μｇ／ｄｍ 2 である、
（Ｍ）前記中間層は、前記キャリア上にニッケル層、及び、窒素含有有機化合物、硫黄含有有機化合物及びカルボン酸のいずれかを含む有機物層の順で積層されて構成されており、
前記中間層におけるニッケルの付着量が１００〜４００００μｇ／ｄｍ 2 である、
（Ｎ）前記中間層は、前記キャリア上に窒素含有有機化合物、硫黄含有有機化合物及びカルボン酸のいずれかを含む有機物層、及び、ニッケル層の順で積層されて構成されており、
前記中間層におけるニッケルの付着量が１００〜４００００μｇ／ｄｍ 2 である、
（Ｏ）前記中間層が有機物を厚みで２５ｎｍ以上８０ｎｍ以下含有する、
（Ｐ）前記（Ｍ）または前記（Ｎ）を満たし、且つ、前記中間層が有機物を厚みで２５ｎｍ以上８０ｎｍ以下含有する、
（Ｑ）前記中間層は、前記キャリア上にニッケル層またはニッケルを含む合金層および、モリブデン、コバルト、モリブデンコバルト合金のいずれか１種以上を含む層の順で積層されて構成されており、
前記中間層におけるニッケルの付着量が１００〜４００００μｇ／ｄｍ 2 であり、モリブデンが含まれる場合にはモリブデンの付着量が１０〜１０００μｇ／ｄｍ 2 、コバルトが含まれる場合にはコバルトの付着量が１０〜１０００μｇ／ｄｍ 2 である。 The copper foil with a carrier as described in any one of Claims 1-10 which satisfy | fills any one of the following (H)-(Q).
(H) In the intermediate layer, any one layer of nickel or an alloy containing nickel and a layer containing any one or more of chromium, a chromium alloy, and an oxide of chromium are laminated in this order on the carrier. Configured ,
(I) The layer satisfying (H) and containing at least one of chromium, a chromium alloy, and a chromium oxide includes a chromate treatment layer.
(J) The intermediate layer includes zinc.
(K) The intermediate layer is formed on the carrier by any one of nickel, nickel-zinc alloy, nickel-phosphorus alloy, nickel-cobalt alloy, zinc chromate treatment layer, pure chromate treatment layer, chromium plating layer. Any one of the layers is laminated in this order,
(L) the intermediate layer is on the carrier;
A nickel layer or a nickel-zinc alloy layer and a zinc chromate treatment layer are laminated in this order, or
A nickel-zinc alloy layer and a pure chromate treatment layer or a zinc chromate treatment layer are laminated in this order.
The amount of adhered 100~40000μg / dm 2 of nickel in the intermediate layer, the adhesion amount of chromium 5~100μg / dm 2, the adhesion amount of the zinc is 1~70μg / dm 2,
(M) The intermediate layer is formed by laminating a nickel layer on the carrier and an organic material layer containing any one of a nitrogen-containing organic compound, a sulfur-containing organic compound and a carboxylic acid,
The adhesion amount of nickel in the intermediate layer is 100 to 40000 μg / dm 2 .
(N) The intermediate layer is configured by laminating on the carrier in order of a nitrogen-containing organic compound, a sulfur-containing organic compound and a carboxylic acid, and a nickel layer.
The adhesion amount of nickel in the intermediate layer is 100 to 40000 μg / dm 2 .
(O) The intermediate layer contains an organic substance in a thickness of 25 nm or more and 80 nm or less,
(P) Satisfying (M) or (N) above, and the intermediate layer contains an organic substance in a thickness of 25 nm to 80 nm.
(Q) The intermediate layer is formed by stacking a nickel layer or an alloy layer containing nickel on the carrier and a layer containing any one or more of molybdenum, cobalt, and a molybdenum cobalt alloy in this order.
The adhesion amount of nickel in the intermediate layer is 100 to 40000 μg / dm 2 , and when molybdenum is included, the adhesion amount of molybdenum is 10 to 1000 μg / dm 2 , and when cobalt is included, the adhesion amount of cobalt is 10 ˜1000 μg / dm 2 .
（Ｒ）前記粗化処理層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された１種以上の層を有する、
（Ｓ）前記粗化処理層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された１種以上の層を有し、且つ、前記耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された１種以上の層の上に樹脂層を備える、
（Ｔ）前記粗化処理層上に樹脂層を備える。 The copper foil with a carrier as described in any one of Claims 1-11 which satisfy | fills any one of the following (R)-(T).
(R) The surface of the roughening treatment layer has one or more layers selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer .
(S) The surface of the roughening treatment layer has one or more layers selected from the group consisting of a heat resistance layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer, and the heat resistance layer, A resin layer is provided on one or more layers selected from the group consisting of a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer.
(T) A resin layer is provided on the roughening treatment layer.
前記キャリア付銅箔と絶縁基板とを積層する工程、
前記キャリア付銅箔と絶縁基板とを積層した後に、前記キャリア付銅箔のキャリアを剥がす工程を経て銅張積層板を形成し、
その後、セミアディティブ法、サブトラクティブ法、パートリーアディティブ法又はモディファイドセミアディティブ法のいずれかの方法によって、回路を形成する工程を含むプリント配線板の製造方法。 A step of preparing the carrier-attached copper foil according to any one of claims 1 to 12 and an insulating substrate,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the carrier-attached copper foil and the insulating substrate, forming a copper-clad laminate through a step of peeling the carrier of the carrier-attached copper foil,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.
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| JP6415033B2 (en) * | 2012-09-11 | 2018-10-31 | Ｊｘ金属株式会社 | Copper foil with carrier, method for producing copper-clad laminate, and method for producing printed wiring board |
| JP6781562B2 (en) * | 2016-03-28 | 2020-11-04 | Ｊｘ金属株式会社 | Copper foil for flexible printed circuit boards, copper-clad laminates using it, flexible printed circuit boards, and electronic devices |
| JP6328679B2 (en) * | 2016-03-28 | 2018-05-23 | Ｊｘ金属株式会社 | Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device |
| CN108401376A (en) * | 2018-05-08 | 2018-08-14 | 江西景旺精密电路有限公司 | A kind of PCB pad pastings pre-treating method |
| JP2019194360A (en) * | 2019-06-26 | 2019-11-07 | Ｊｘ金属株式会社 | Copper foil for flexible printed wiring board, and copper clad laminate, flexible printed wiring board and electronic device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6415033B2 (en) * | 2012-09-11 | 2018-10-31 | Ｊｘ金属株式会社 | Copper foil with carrier, method for producing copper-clad laminate, and method for producing printed wiring board |
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