JP2015010275A5 - Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board - Google Patents

Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board Download PDF

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JP2015010275A5
JP2015010275A5 JP2013139285A JP2013139285A JP2015010275A5 JP 2015010275 A5 JP2015010275 A5 JP 2015010275A5 JP 2013139285 A JP2013139285 A JP 2013139285A JP 2013139285 A JP2013139285 A JP 2013139285A JP 2015010275 A5 JP2015010275 A5 JP 2015010275A5
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carrier
copper
copper foil
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キャリアと、キャリア上に積層された中間層と、中間層上に積層された極薄銅層とを備えたキャリア付銅箔であって、
前記中間層は、タングステン−ニッケル合金、またはタングステン−コバルト合金、またはタングステン−鉄合金で構成されており、
前記中間層のタングステンの付着量が50〜10000μg/dm2、中間層にニッケルを含む場合はニッケルの付着量が50〜40000μg/dm2、中間層にコバルトを含む場合はコバルトの付着量が50〜10000μg/dm2、中間層に鉄を含む場合は鉄の付着量が50〜10000μg/dm2であり、
前記キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が1〜70質量%であるキャリア付銅箔。
A carrier-attached copper foil comprising a carrier, an intermediate layer laminated on the carrier, and an ultrathin copper layer laminated on the intermediate layer,
The intermediate layer is made of a tungsten-nickel alloy, a tungsten-cobalt alloy, or a tungsten-iron alloy,
The intermediate layer has a tungsten deposition amount of 50 to 10,000 μg / dm 2 , the nickel has an adhesion amount of 50 to 40,000 μg / dm 2 , and the intermediate layer has cobalt deposition amount of 50. 10000 μg / dm 2 , when the intermediate layer contains iron, the amount of iron adhered is 50 to 10000 μg / dm 2 ,
With a carrier whose maximum value of tungsten concentration is 1 to 70% by mass when 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order from the cross section of the carrier / intermediate layer / ultra thin copper layer. Copper foil.
前記キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が3〜70質量%である請求項1に記載のキャリア付銅箔。   When a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order from the cross section of the carrier / intermediate layer / ultra thin copper layer, the maximum value of tungsten concentration is 3 to 70% by mass. The copper foil with a carrier according to 1. 前記キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が5〜60質量%である請求項2に記載のキャリア付銅箔。   When the 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order from the cross section of the carrier / intermediate layer / ultra thin copper layer, the maximum value of tungsten concentration is 5 to 60% by mass. 2. Copper foil with carrier according to 2. 前記中間層は、前記キャリア上に、ニッケルまたはニッケル合金と、タングステン−ニッケル合金またはタングステン−コバルト合金またはタングステン−鉄合金とがこの順で積層されて構成されており、
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、ニッケル濃度の最大値が50〜95質量%である請求項1〜3のいずれか一項に記載のキャリア付銅箔。
The intermediate layer is formed by stacking nickel or a nickel alloy and a tungsten-nickel alloy, a tungsten-cobalt alloy, or a tungsten-iron alloy in this order on the carrier,
From the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer, when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order, the maximum value of the nickel concentration is 50 to 95% by mass. The copper foil with a carrier as described in any one of Claims 1-3.
前記極薄銅層に絶縁基板を大気中、圧力:20kgf/cm2、220℃×2時間の条件下で熱圧着させたときに、
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が1〜60質量%になる請求項1〜4のいずれか一項に記載のキャリア付銅箔。
When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
From the cross section of the copper foil carrier / intermediate layer / ultra-thin copper layer, when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order, the maximum value of the tungsten concentration becomes 1 to 60% by mass. The copper foil with a carrier as described in any one of Claims 1-4.
前記極薄銅層に絶縁基板を大気中、圧力:20kgf/cm2、220℃×2時間の条件下で熱圧着させたときに、
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステンと、ニッケル及び/またはコバルト及び/または鉄と、銅とが共存する部分における銅濃度最小値が10〜65質量%となる請求項1〜5のいずれか一項に記載のキャリア付銅箔。
When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
From the cross section of the copper foil carrier / intermediate layer / ultra-thin copper layer, when a 50-1000 nm long STEM line analysis was performed in a range including all of them in this order, tungsten, nickel and / or cobalt and / or iron The copper foil with a carrier according to any one of claims 1 to 5, wherein a minimum copper concentration in a portion where copper coexists is 10 to 65 mass%.
以下の(A)〜(C)のいずれか一つを満たす請求項1〜6のいずれか一項に記載のキャリア付銅箔。
(A)前記極薄銅層表面に粗化処理層を有する
(B)前記極薄銅層表面に粗化処理層を有し、且つ、当該粗化処理層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された1種以上の層を有する、
(C)前記極薄銅層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された1種以上の層を有する。
The copper foil with a carrier as described in any one of Claims 1-6 which satisfy | fills any one of the following (A)-(C).
(A) A roughening treatment layer is provided on the surface of the ultrathin copper layer .
(B) The surface of the ultrathin copper layer has a roughening treatment layer, and the surface of the roughening treatment layer is selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. Having one or more layers formed,
(C) One or more layers selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer are provided on the surface of the ultrathin copper layer.
前記極薄銅層上又は前記粗化処理層上又は前記耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された1種以上の層の上に樹脂層を備える請求項1〜のいずれか一項に記載のキャリア付銅箔。 A resin layer is provided on the ultrathin copper layer or on the roughening treatment layer or on one or more layers selected from the group consisting of the heat-resistant layer, the rust prevention layer, the chromate treatment layer, and the silane coupling treatment layer. copper foil with carrier according to any one of claims 1-7. 以下の(D)〜(G)のいずれか一つ以上を満たす請求項1〜8のいずれか一項に記載のキャリア付銅箔。
(D)前記極薄銅層表面のJISZ8730に基づく色差ΔLが−40以下である
(E)前記極薄銅層表面のJISZ8730に基づく色差ΔE*abが45以上である、
(F)前記極薄銅層表面のJISZ8730に基づく色差Δaが20以下である、
(G)前記極薄銅層表面のJISZ8730に基づく色差Δbが20以下である。
The copper foil with a carrier according to any one of claims 1 to 8, which satisfies at least one of the following (D) to (G).
(D) The color difference ΔL based on JISZ8730 on the surface of the ultrathin copper layer is −40 or less .
(E) The color difference ΔE * ab based on JISZ8730 on the surface of the ultrathin copper layer is 45 or more.
(F) The color difference Δa based on JISZ8730 on the surface of the ultrathin copper layer is 20 or less.
(G) The color difference Δb based on JISZ8730 on the surface of the ultrathin copper layer is 20 or less.
キャリア上に、又は、キャリア上に乾式めっき又は電気めっきにより、ニッケルめっき層またはニッケルを含む合金めっき層を形成した後に、乾式めっき又は電気めっきにより、タングステン−コバルト合金、タングステン−ニッケル合金、タングステン−鉄合金のいずれか1種以上を含む層を形成することで中間層を形成する工程と、前記中間層上に電解めっきにより極薄銅層を形成する工程とを含む請求項1〜のいずれか一項に記載のキャリア付銅箔の製造方法。 After a nickel plating layer or an alloy plating layer containing nickel is formed on the carrier or by dry plating or electroplating on the carrier , tungsten-cobalt alloy, tungsten-nickel alloy, tungsten- forming an intermediate layer by forming a layer containing any one or more of iron alloy, any of claim 1-9 comprising the step of forming the ultra-thin copper layer by electrolytic plating on the middle layer A method for producing a copper foil with a carrier according to claim 1. 請求項1〜のいずれか一項に記載のキャリア付銅箔を用いてプリント配線板を製造する方法 Method of making a print wiring board using the copper foil with carrier according to any one of claims 1-9. 請求項1〜のいずれか一項に記載のキャリア付銅箔を用いて銅張積層板を製造する方法 Method of producing a copper-clad laminate using a copper foil with carrier according to any one of claims 1-9. 請求項1〜のいずれか一項に記載のキャリア付銅箔と絶縁基板とを準備する工程、
前記キャリア付銅箔と絶縁基板とを積層する工程、
前記キャリア付銅箔と絶縁基板とを積層した後に、前記キャリア付銅箔のキャリアを剥がす工程を経て銅張積層板を形成し、
その後、セミアディティブ法、サブトラクティブ法、パートリーアディティブ法又はモディファイドセミアディティブ法のいずれかの方法によって、回路を形成する工程を含むプリント配線板の製造方法。
A step of preparing the carrier-attached copper foil according to any one of claims 1 to 9 and an insulating substrate;
Laminating the copper foil with carrier and an insulating substrate;
After laminating the carrier-attached copper foil and the insulating substrate, forming a copper-clad laminate through a step of peeling the carrier of the carrier-attached copper foil,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.
請求項1〜のいずれか一項に記載のキャリア付銅箔の前記極薄銅層側表面に回路を形成する工程、
前記回路が埋没するように前記キャリア付銅箔の前記極薄銅層側表面に樹脂層を形成する工程、
前記樹脂層上に回路を形成する工程、
前記樹脂層上に回路を形成した後に、前記キャリアを剥離させる工程、及び、
前記キャリアを剥離させた後に、前記極薄銅層を除去することで、前記極薄銅層側表面に形成した、前記樹脂層に埋没している回路を露出させる工程
を含むプリント配線板の製造方法。
Forming a circuit on the ultrathin copper layer side surface of the copper foil with a carrier according to any one of claims 1 to 9 ,
Forming a resin layer on the ultrathin copper layer side surface of the carrier-attached copper foil so that the circuit is buried;
Forming a circuit on the resin layer;
Forming the circuit on the resin layer, and then peeling the carrier; and
After the carrier is peeled off, the printed wiring board includes a step of exposing the circuit embedded in the resin layer formed on the surface of the ultrathin copper layer by removing the ultrathin copper layer Method.
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