JP2015010275A5 - Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board - Google Patents
Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board Download PDFInfo
- Publication number
- JP2015010275A5 JP2015010275A5 JP2013139285A JP2013139285A JP2015010275A5 JP 2015010275 A5 JP2015010275 A5 JP 2015010275A5 JP 2013139285 A JP2013139285 A JP 2013139285A JP 2013139285 A JP2013139285 A JP 2013139285A JP 2015010275 A5 JP2015010275 A5 JP 2015010275A5
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- Prior art keywords
- layer
- carrier
- copper
- copper foil
- tungsten
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- 239000000969 carrier Substances 0.000 title claims 29
- 239000011889 copper foil Substances 0.000 title claims 23
- 238000004519 manufacturing process Methods 0.000 title claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 24
- 229910052802 copper Inorganic materials 0.000 claims 24
- 239000010949 copper Substances 0.000 claims 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 12
- -1 tungsten-nickel Chemical compound 0.000 claims 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 6
- 229910052759 nickel Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 239000011347 resin Substances 0.000 claims 5
- 229920005989 resin Polymers 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910000990 Ni alloy Inorganic materials 0.000 claims 4
- 238000007788 roughening Methods 0.000 claims 4
- 229910000531 Co alloy Inorganic materials 0.000 claims 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims 3
- 239000000654 additive Substances 0.000 claims 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims 3
- 230000001808 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 3
- 238000007747 plating Methods 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 3
- 229910000077 silane Inorganic materials 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052803 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 230000000996 additive Effects 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Claims (14)
前記中間層は、タングステン−ニッケル合金、またはタングステン−コバルト合金、またはタングステン−鉄合金で構成されており、
前記中間層のタングステンの付着量が50〜10000μg/dm2、中間層にニッケルを含む場合はニッケルの付着量が50〜40000μg/dm2、中間層にコバルトを含む場合はコバルトの付着量が50〜10000μg/dm2、中間層に鉄を含む場合は鉄の付着量が50〜10000μg/dm2であり、
前記キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が1〜70質量%であるキャリア付銅箔。 A carrier-attached copper foil comprising a carrier, an intermediate layer laminated on the carrier, and an ultrathin copper layer laminated on the intermediate layer,
The intermediate layer is made of a tungsten-nickel alloy, a tungsten-cobalt alloy, or a tungsten-iron alloy,
The intermediate layer has a tungsten deposition amount of 50 to 10,000 μg / dm 2 , the nickel has an adhesion amount of 50 to 40,000 μg / dm 2 , and the intermediate layer has cobalt deposition amount of 50. 10000 μg / dm 2 , when the intermediate layer contains iron, the amount of iron adhered is 50 to 10000 μg / dm 2 ,
With a carrier whose maximum value of tungsten concentration is 1 to 70% by mass when 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order from the cross section of the carrier / intermediate layer / ultra thin copper layer. Copper foil.
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、ニッケル濃度の最大値が50〜95質量%である請求項1〜3のいずれか一項に記載のキャリア付銅箔。 The intermediate layer is formed by stacking nickel or a nickel alloy and a tungsten-nickel alloy, a tungsten-cobalt alloy, or a tungsten-iron alloy in this order on the carrier,
From the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer, when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order, the maximum value of the nickel concentration is 50 to 95% by mass. The copper foil with a carrier as described in any one of Claims 1-3.
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステン濃度の最大値が1〜60質量%になる請求項1〜4のいずれか一項に記載のキャリア付銅箔。 When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
From the cross section of the copper foil carrier / intermediate layer / ultra-thin copper layer, when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order, the maximum value of the tungsten concentration becomes 1 to 60% by mass. The copper foil with a carrier as described in any one of Claims 1-4.
前記銅箔キャリア/中間層/極薄銅層の断面から、この順番でこれらを全て含む範囲で50〜1000nm長STEM線分析を行ったとき、タングステンと、ニッケル及び/またはコバルト及び/または鉄と、銅とが共存する部分における銅濃度最小値が10〜65質量%となる請求項1〜5のいずれか一項に記載のキャリア付銅箔。 When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
From the cross section of the copper foil carrier / intermediate layer / ultra-thin copper layer, when a 50-1000 nm long STEM line analysis was performed in a range including all of them in this order, tungsten, nickel and / or cobalt and / or iron The copper foil with a carrier according to any one of claims 1 to 5, wherein a minimum copper concentration in a portion where copper coexists is 10 to 65 mass%.
(A)前記極薄銅層表面に粗化処理層を有する、
(B)前記極薄銅層表面に粗化処理層を有し、且つ、当該粗化処理層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された1種以上の層を有する、
(C)前記極薄銅層の表面に、耐熱層、防錆層、クロメート処理層及びシランカップリング処理層からなる群から選択された1種以上の層を有する。 The copper foil with a carrier as described in any one of Claims 1-6 which satisfy | fills any one of the following (A)-(C).
(A) A roughening treatment layer is provided on the surface of the ultrathin copper layer .
(B) The surface of the ultrathin copper layer has a roughening treatment layer, and the surface of the roughening treatment layer is selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. Having one or more layers formed,
(C) One or more layers selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer are provided on the surface of the ultrathin copper layer.
(D)前記極薄銅層表面のJISZ8730に基づく色差ΔLが−40以下である、
(E)前記極薄銅層表面のJISZ8730に基づく色差ΔE*abが45以上である、
(F)前記極薄銅層表面のJISZ8730に基づく色差Δaが20以下である、
(G)前記極薄銅層表面のJISZ8730に基づく色差Δbが20以下である。 The copper foil with a carrier according to any one of claims 1 to 8, which satisfies at least one of the following (D) to (G).
(D) The color difference ΔL based on JISZ8730 on the surface of the ultrathin copper layer is −40 or less .
(E) The color difference ΔE * ab based on JISZ8730 on the surface of the ultrathin copper layer is 45 or more.
(F) The color difference Δa based on JISZ8730 on the surface of the ultrathin copper layer is 20 or less.
(G) The color difference Δb based on JISZ8730 on the surface of the ultrathin copper layer is 20 or less.
前記キャリア付銅箔と絶縁基板とを積層する工程、
前記キャリア付銅箔と絶縁基板とを積層した後に、前記キャリア付銅箔のキャリアを剥がす工程を経て銅張積層板を形成し、
その後、セミアディティブ法、サブトラクティブ法、パートリーアディティブ法又はモディファイドセミアディティブ法のいずれかの方法によって、回路を形成する工程を含むプリント配線板の製造方法。 A step of preparing the carrier-attached copper foil according to any one of claims 1 to 9 and an insulating substrate;
Laminating the copper foil with carrier and an insulating substrate;
After laminating the carrier-attached copper foil and the insulating substrate, forming a copper-clad laminate through a step of peeling the carrier of the carrier-attached copper foil,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.
前記回路が埋没するように前記キャリア付銅箔の前記極薄銅層側表面に樹脂層を形成する工程、
前記樹脂層上に回路を形成する工程、
前記樹脂層上に回路を形成した後に、前記キャリアを剥離させる工程、及び、
前記キャリアを剥離させた後に、前記極薄銅層を除去することで、前記極薄銅層側表面に形成した、前記樹脂層に埋没している回路を露出させる工程
を含むプリント配線板の製造方法。 Forming a circuit on the ultrathin copper layer side surface of the copper foil with a carrier according to any one of claims 1 to 9 ,
Forming a resin layer on the ultrathin copper layer side surface of the carrier-attached copper foil so that the circuit is buried;
Forming a circuit on the resin layer;
Forming the circuit on the resin layer, and then peeling the carrier; and
After the carrier is peeled off, the printed wiring board includes a step of exposing the circuit embedded in the resin layer formed on the surface of the ultrathin copper layer by removing the ultrathin copper layer Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013139285A JP6310193B2 (en) | 2013-07-02 | 2013-07-02 | Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013139285A JP6310193B2 (en) | 2013-07-02 | 2013-07-02 | Copper foil with carrier, method for producing the same, method for producing copper-clad laminate, and method for producing printed wiring board |
Publications (3)
Publication Number | Publication Date |
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JP2015010275A JP2015010275A (en) | 2015-01-19 |
JP2015010275A5 true JP2015010275A5 (en) | 2016-05-26 |
JP6310193B2 JP6310193B2 (en) | 2018-04-11 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2015122258A1 (en) * | 2014-02-14 | 2015-08-20 | 古河電気工業株式会社 | Carrier-equipped ultrathin copper foil, and copper-clad laminate, printed circuit substrate and coreless substrate that are manufactured using same |
JP6640567B2 (en) * | 2015-01-16 | 2020-02-05 | Jx金属株式会社 | Copper foil with carrier, laminate, printed wiring board, method for manufacturing electronic equipment, and method for manufacturing printed wiring board |
KR101852671B1 (en) * | 2015-01-21 | 2018-06-04 | 제이엑스금속주식회사 | Copper foil with carrier, laminate, printed circuit board and method of manufacturing printed circuit board |
JP6099778B1 (en) * | 2015-01-21 | 2017-03-22 | Jx金属株式会社 | A copper foil with a carrier, a laminate, a printed wiring board, a printed wiring board manufacturing method, and an electronic device manufacturing method. |
JP6023366B1 (en) * | 2015-06-17 | 2016-11-09 | Jx金属株式会社 | Copper foil with carrier, laminate, printed wiring board manufacturing method and electronic device manufacturing method |
JP6023367B1 (en) * | 2015-06-17 | 2016-11-09 | Jx金属株式会社 | Copper foil with carrier, laminate, printed wiring board manufacturing method and electronic device manufacturing method |
JP7481148B2 (en) | 2020-04-01 | 2024-05-10 | Ykk Ap株式会社 | Fittings |
Family Cites Families (9)
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KR100618511B1 (en) * | 2002-03-05 | 2006-08-31 | 히다치 가세고교 가부시끼가이샤 | Metal Foil with Resin and Metal-Clad Laminate, and Printed Wiring Board Using the Same and Method for Production Thereof |
JP4927503B2 (en) * | 2005-12-15 | 2012-05-09 | 古河電気工業株式会社 | Ultra-thin copper foil with carrier and printed wiring board |
CN1984527B (en) * | 2005-12-15 | 2010-12-01 | 古河电气工业株式会社 | Ultrathin copper foil with carrier and printed circuit board |
JP5024930B2 (en) * | 2006-10-31 | 2012-09-12 | 三井金属鉱業株式会社 | Surface-treated copper foil, surface-treated copper foil with ultra-thin primer resin layer, method for producing the surface-treated copper foil, and method for producing surface-treated copper foil with an ultra-thin primer resin layer |
EP2336395A1 (en) * | 2008-09-05 | 2011-06-22 | Furukawa Electric Co., Ltd. | Ultrathin copper foil with carrier, and copper laminated board or printed wiring board |
KR101426038B1 (en) * | 2008-11-13 | 2014-08-01 | 주식회사 엠디에스 | Printed circuit board and method of manufacturing the same |
JP5651564B2 (en) * | 2011-09-30 | 2015-01-14 | 富士フイルム株式会社 | Copper foil for pasting |
WO2013065727A1 (en) * | 2011-11-02 | 2013-05-10 | Jx日鉱日石金属株式会社 | Copper foil for printed circuit |
JP5875350B2 (en) * | 2011-11-30 | 2016-03-02 | 三井金属鉱業株式会社 | Electrolytic copper alloy foil and electrolytic copper alloy foil with carrier foil |
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