JP2014190932A - 金属単結晶薄膜の製造方法、光学デバイスの製造方法及び光学デバイス - Google Patents

金属単結晶薄膜の製造方法、光学デバイスの製造方法及び光学デバイス Download PDF

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JP2014190932A
JP2014190932A JP2013068695A JP2013068695A JP2014190932A JP 2014190932 A JP2014190932 A JP 2014190932A JP 2013068695 A JP2013068695 A JP 2013068695A JP 2013068695 A JP2013068695 A JP 2013068695A JP 2014190932 A JP2014190932 A JP 2014190932A
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single crystal
thin film
metal
crystal thin
metal single
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JP2014190932A5 (enExample
Inventor
Kiyoshi Kikuchi
清 菊地
Makoto Kurimoto
誠 栗本
Takashi Uchino
俊 内野
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K Technology Corp Japan
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K Technology Corp Japan
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Publication of JP2014190932A5 publication Critical patent/JP2014190932A5/ja
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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP2013068695A 2013-03-28 2013-03-28 金属単結晶薄膜の製造方法、光学デバイスの製造方法及び光学デバイス Pending JP2014190932A (ja)

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JP2013068695A JP2014190932A (ja) 2013-03-28 2013-03-28 金属単結晶薄膜の製造方法、光学デバイスの製造方法及び光学デバイス

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JP2014190932A5 JP2014190932A5 (enExample) 2016-04-21

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101916316B1 (ko) * 2017-04-26 2018-11-09 한국과학기술연구원 플라즈모닉 도파관용 적층체 및 그의 제조방법
WO2023053649A1 (ja) * 2021-09-28 2023-04-06 学校法人東北工業大学 光学デバイス及びその製造方法
CN117448767A (zh) * 2023-11-02 2024-01-26 浙江师范大学 一种自由态金属薄膜及其制备方法
CN119685756A (zh) * 2024-12-03 2025-03-25 清华大学 一种超光滑金属薄膜及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136865A (en) * 1976-05-11 1977-11-15 Oike Kogyo Kk Metal evaporation foil and method of making foil and metal evaporation powder
WO2005001526A1 (ja) * 2003-06-26 2005-01-06 Nikon Corporation 多層膜光学素子の製造方法
JP2007078451A (ja) * 2005-09-13 2007-03-29 Canon Inc 金属薄膜つきプリズム及びそれを用いた分光分析装置
JP2008181906A (ja) * 2007-01-23 2008-08-07 Nagaoka Univ Of Technology 薄膜電極の製造方法
JP2011242306A (ja) * 2010-05-19 2011-12-01 Kobe Steel Ltd 表面プラズモン共鳴測定用チップ
JP2012163342A (ja) * 2011-02-03 2012-08-30 National Institute Of Advanced Industrial & Technology 金属検出装置、検出板及び金属検出方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136865A (en) * 1976-05-11 1977-11-15 Oike Kogyo Kk Metal evaporation foil and method of making foil and metal evaporation powder
WO2005001526A1 (ja) * 2003-06-26 2005-01-06 Nikon Corporation 多層膜光学素子の製造方法
JP2007078451A (ja) * 2005-09-13 2007-03-29 Canon Inc 金属薄膜つきプリズム及びそれを用いた分光分析装置
JP2008181906A (ja) * 2007-01-23 2008-08-07 Nagaoka Univ Of Technology 薄膜電極の製造方法
JP2011242306A (ja) * 2010-05-19 2011-12-01 Kobe Steel Ltd 表面プラズモン共鳴測定用チップ
JP2012163342A (ja) * 2011-02-03 2012-08-30 National Institute Of Advanced Industrial & Technology 金属検出装置、検出板及び金属検出方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101916316B1 (ko) * 2017-04-26 2018-11-09 한국과학기술연구원 플라즈모닉 도파관용 적층체 및 그의 제조방법
WO2023053649A1 (ja) * 2021-09-28 2023-04-06 学校法人東北工業大学 光学デバイス及びその製造方法
JP7296681B1 (ja) * 2021-09-28 2023-06-23 学校法人東北工業大学 光学デバイス及びその製造方法
CN117448767A (zh) * 2023-11-02 2024-01-26 浙江师范大学 一种自由态金属薄膜及其制备方法
CN119685756A (zh) * 2024-12-03 2025-03-25 清华大学 一种超光滑金属薄膜及其制备方法

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