JP2014162992A - 円筒形の蒸着源 - Google Patents
円筒形の蒸着源 Download PDFInfo
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- 230000008020 evaporation Effects 0.000 title claims abstract description 9
- 238000001704 evaporation Methods 0.000 title claims abstract description 9
- 238000007740 vapor deposition Methods 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 12
- 238000000889 atomisation Methods 0.000 claims description 10
- 229910000859 α-Fe Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 62
- 230000008569 process Effects 0.000 abstract description 53
- 238000000151 deposition Methods 0.000 description 82
- 238000000576 coating method Methods 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 230000033001 locomotion Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007770 physical coating process Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3432—Target-material dispenser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
Abstract
【解決手段】外側の円筒壁に蒸着されるターゲット物質と、少なくとも磁界システムの一部を形成するとともに磁界を生成するために円筒形の蒸着源1の内部に配置される第1の磁界源401及び第2の磁界源402とを備え、予め定義できる計画にしたがって磁界の形状及び/又は強度を予め定義できる空間的な領域内に配置できるように、第1の磁界源401及び第2の磁界源402は磁界の形状及び/又は強度を設定するように構成された運搬システム500に搭載され、第1の磁界源401は第1の運搬アームに501配置され、かつ第1の旋回軸に対して予め定義できる第1の旋回角(α1)で旋回可能になっている。
【選択図】図1a
Description
Claims (15)
- 円筒形の蒸着源であって、
外側の円筒壁(2)に、蒸着されるターゲット物質(3)と、少なくとも磁界システム(400)の一部を形成するとともに磁界を生成するために円筒形の蒸着源の内部に配置された第1の磁界源(401)及び第2の磁界源(402)とを備え、
磁界の形状及び/又は強度を、予め定義できる計画に従って予め定義できる空間的な領域内に設定できるように、前記第1の磁界源(401)及び前記第2の磁界源(402)は、運搬システム(500)に搭載され、
前記運搬システム(500)は、磁界の形状及び/又は強度を設定するように構成され、前記第1の磁界源(410)は第1の運搬アーム(501)に配置され、かつ第1の旋回軸(5011)に対して予め定義できる第1の旋回角(α1)で旋回できることを特徴とする円筒形の蒸着源。 - 前記第2の磁界源(402)は、第2の運搬アーム(502)に配置され、かつ第2の旋回軸(5021)に対して予め定義できる第2の旋回角(α2)で旋回できる、請求項1に記載の蒸着源。
- 前記磁界システム(400)は、さらに第1の磁性要素(403)を含む、請求項1又は請求項2に記載の蒸着源。
- 前記磁界システム(400)は、さらに第2の磁性要素(401)を含む、請求項1乃至請求項3のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)及び/又は前記運搬システム(500)は、予め定義できる空間的な方向に直線的に移動することができる、請求項1乃至請求項4のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)及び/又は前記運搬システム(500)は、前記運搬システム(500)の長軸(L)に垂直な方向(RS)に直線的に移動できるように配置され、とりわけ、前記長軸(L)に垂直に、かつ、合計の旋回角(α12)の二等分線に平行に、直線的に移動するように配置される、請求項1乃至請求項5のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)及び/又は前記運搬システム(500)は、前記運搬システム(500)の長軸(L)に平行な方向(RP)に直線的に移動するように配置される、請求項1乃至請求項6のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)及び/又は前記運搬システム(500)は、回転軸(D)の周りに予め定義できる回転角(β)で回転可能に配置され、前記回転軸(D)は、好ましくは、前記運搬システム(500)の長軸(L)に平行である、請求項1乃至請求項7のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)及び/又は前記運搬システム(500)は、傾斜軸(K)の周りに傾斜可能に配置される、請求項1乃至請求項8のいずれか一項に記載の蒸着源。
- 前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)は、前記合計の旋回角(α12)の前記二等分線(WH)に関して、前記運搬システム(500)の長軸(L)から予め定義できる間隔をおいて配置され、好ましくはヨーク(410)に、とりわけフェライト材料からなるヨーク(410)に配置される、請求項3乃至請求項9のいずれか一項に記載の蒸着源。
- 前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)は、追加の磁石であるか、又はヨーク(410)である、請求項3乃至請求項10のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)は、永久磁石であるか、かつ/又はフェライトであるか、かつ/又は電磁石である、請求項1乃至請求項11のいずれか一項に記載の蒸着源。
- 前記第1の磁界源(401)及び/又は前記第2の磁界源(402)及び/又は前記第1の磁性要素(403)及び/又は前記第2の磁性要素(404)の磁界の強さが制御できるか、又は調整できる、請求項1乃至請求項12のいずれか一項に記載の蒸着源。
- 前記磁界システム(400)が、平衡マグネトロン又は非平衡マグネトロンを形成する、請求項1乃至請求項13のいずれか一項に記載の蒸着源。
- 前記蒸着陰極が、原子化陰極、及びアーク蒸着源、とりわけアーク陰極の両方として使用できるように、前記蒸着源が蒸着陰極、又は蒸着陽極として構成される、請求項1乃至請求項14のいずれか一項に記載の蒸着源。
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US (1) | US10811239B2 (ja) |
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WO2021112089A1 (ja) * | 2019-12-03 | 2021-06-10 | 日東電工株式会社 | マグネトロンスパッタリング成膜装置 |
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CN106958011B (zh) * | 2017-05-17 | 2019-02-22 | 赵其煜 | 动态控制溅射靶材利用率的控制装置和控制方法 |
CN107723669A (zh) * | 2017-08-22 | 2018-02-23 | 深圳市生波尔光电技术有限公司 | 柱状弧源和电弧离子镀膜装置 |
US20210246542A1 (en) * | 2018-11-19 | 2021-08-12 | Kvarc Services Inc | Coating apparatus and method for use thereof |
CH715878A1 (de) | 2019-02-26 | 2020-08-31 | Oerlikon Surface Solutions Ag Pfaeffikon | Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen. |
CN111424247B (zh) * | 2020-05-12 | 2022-05-10 | 肇庆市科润真空设备有限公司 | 一种旋转式长寿命多弧靶及其使用方法 |
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CA2842619A1 (en) | 2014-08-26 |
US10811239B2 (en) | 2020-10-20 |
EP2778253B1 (de) | 2018-10-24 |
CN104004997A (zh) | 2014-08-27 |
EP2778253A1 (de) | 2014-09-17 |
JP6438657B2 (ja) | 2018-12-19 |
CN104004997B (zh) | 2018-11-27 |
US20140238852A1 (en) | 2014-08-28 |
CA2842619C (en) | 2021-06-15 |
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