JP2014149335A - Substrate for electro-optic device, electro-optic device, and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for an electro-optic device, an electro-optic device, and electronic equipment, in which brightness of display and display qualities can be improved by reducing thickness of a common electrode.SOLUTION: A counter substrate 30 includes: a microlens array substrate 10; an optical path length adjusting layer 31 disposed on the microlens array substrate 10; a light-shielding layer 32 disposed on a surface 31a side of the optical path length adjusting layer 31 and having an opening 32a corresponding to each of a plurality of pixels P; and a common electrode 34 disposed to cover the optical path length adjusting layer 31 and the light-shielding layer 32 and to be in contact with the light-shielding layer 32. The light-shielding layer 32 is formed of a metal material. The common electrode 34 has a thickness T of 22 nm or less. A distance D1, D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light-shielding layer 32 is equal to or less than the thickness T of the common electrode 34.

Description

  The present invention relates to a substrate for an electro-optical device, an electro-optical device, and an electronic apparatus.

  There is known an electro-optical device including an electro-optical material (for example, liquid crystal) between an element substrate in which a plurality of pixels and switching elements are provided in a display area, and a counter substrate disposed to face the element substrate. Yes. Examples of the electro-optical device include a liquid crystal device used as a liquid crystal light valve of a projector. Such a liquid crystal device is required to improve brightness and contrast.

  In a liquid crystal device, a light shielding layer is provided on an element substrate and a light shielding layer is also provided on a counter substrate in order to prevent malfunction and deterioration of display quality due to light entering a TFT as a switching element and generating a light leakage current. The configuration is known (see, for example, Patent Document 1). By providing the light-blocking layer also on the counter substrate, light leakage between adjacent pixels can be suppressed, so that the contrast of the liquid crystal device can be improved.

JP 2003-167242 A

  By the way, a common electrode (counter electrode) is provided on almost the entire surface of the counter substrate. However, if the thickness of the common electrode is large, the light transmittance decreases, so that the brightness of the projected image decreases. Further, when projecting light synthesized by passing through a liquid crystal device for each color light of red light (R), green light (G), and blue light (B), if the light transmittance varies greatly by the color light, The pixels displayed in white may become dark or the hue may be shifted. In the liquid crystal device described in Patent Document 1, the thickness of the common electrode is about 50 nm to 200 nm. If the thickness of the common electrode is in such a range, the brightness and display quality of the display may be reduced. There is a problem that there is.

  Further, if the thickness of the common electrode is reduced in order to improve the display brightness of the liquid crystal device, the resistance value of the common electrode is increased. When the resistance value of the common electrode increases, there is a problem in that the display quality is deteriorated, for example, the potential at the common electrode is fluctuated and flicker occurs in the display of the liquid crystal device. Furthermore, when the thickness of the common electrode is reduced, there is a problem that a discontinuous portion, a crack, or the like is likely to occur in the common electrode when the level difference in the lower layer of the common electrode is large. Accordingly, there is a need for a liquid crystal device capable of reducing the thickness of the common electrode and improving the display brightness and display quality without increasing the resistance value of the common electrode or causing cracks in the common electrode. .

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device substrate according to this application example is provided with a first member, a second member disposed on the first member, and a surface side of the second member, and includes a plurality of pixels. A light-shielding layer having a plurality of openings corresponding to each of the light-shielding layer, a common electrode provided to cover the second member and the light-shielding layer and to be in contact with the light-shielding layer. The common electrode has a thickness of 22 nm or less, and a distance between the surface of the second member and the surface of the light shielding layer is equal to or less than the thickness of the common electrode. .

  According to the configuration of this application example, the light shielding layer is made of a metal material, and the common electrode is provided so as to be in contact with the light shielding layer. Therefore, the common electrode is electrically connected to the light shielding layer. Therefore, even if the thickness of the common electrode is reduced, an increase in the resistance value of the common electrode can be suppressed by being in contact with the light shielding layer. Here, according to the measurement results of the inventors, it is known that good brightness can be obtained if the thickness of the common electrode is 22 nm or less. And since the space | interval (step) of the surface of the 2nd member which is a lower layer of a common electrode and the surface of a light shielding layer is below the thickness of a common electrode, even if the thickness of a common electrode is made thin, Occurrence of cracks and the like due to a step between the surface and the surface of the light shielding layer is suppressed. Accordingly, it is possible to reduce the thickness of the common electrode without increasing the resistance value of the common electrode or generating cracks in the common electrode. As a result, when the electro-optical device substrate is used in a liquid crystal device, a bright liquid crystal device with high display quality can be provided.

  Application Example 2 In the electro-optical device substrate according to the application example described above, a groove is provided between adjacent openings of the plurality of openings on the surface of the second member. The light shielding layer is preferably provided inside the groove.

  According to the configuration of this application example, since the groove is provided on the surface of the second member and the light shielding layer is provided inside the groove, the second member can be formed without reducing the thickness of the light shielding layer. The distance between the surface and the surface of the light shielding layer can be reduced. In other words, the resistance value of the common electrode can be reduced by increasing the thickness of the light shielding layer as compared with the case where the light shielding layer is provided on the surface of the second member. Therefore, even if the common electrode is formed thin, an increase in the resistance value of the common electrode can be more reliably suppressed by the light shielding layer. Further, the light shielding property is improved by increasing the thickness of the light shielding layer.

  Application Example 3 In the electro-optical device substrate according to the application example, it is preferable that the first member is provided with a microlens corresponding to each of the plurality of openings.

  According to the configuration of this application example, the microlens is provided on the first member corresponding to each of the plurality of openings. Therefore, a part of the light that is incident from the first member side and goes straight as it is and is shielded by the light shielding layer can be condensed into each opening by the microlens, thereby improving the light utilization efficiency. Can do. Further, when the light shielding layer is provided inside the groove of the second member, the light shielding layer can be brought closer to the first member side as compared with the case where the light shielding layer is provided on the surface of the second member. Thus, the aperture ratio of the light shielding layer can be increased. And it can reduce that the light from an oblique direction injects into the adjacent opening part by making a light shielding layer close to the 1st member side. Accordingly, when the electro-optical device substrate is used in a liquid crystal device, a brighter and higher display quality liquid crystal device can be provided.

  Application Example 4 In the electro-optical device substrate according to the application example described above, the first member is provided with a reflection portion between adjacent openings of the plurality of openings. preferable.

  According to the configuration of this application example, the reflection portion is provided between the openings in the first member. Therefore, a part of the light that is removed from each opening and is blocked by the light blocking layer can be reflected by the reflecting portion and directed into each opening, so that the light use efficiency can be improved. . Further, when the light shielding layer is provided inside the groove of the second member, the light shielding layer can be brought closer to the first member side as compared with the case where the light shielding layer is provided on the surface of the second member. Thus, the aperture ratio of the light shielding layer can be increased.

  Application Example 5 In the electro-optical device substrate according to the application example, it is preferable that the first member is provided with a color filter corresponding to each of the plurality of openings.

  According to the configuration of this application example, the first member is provided with the color filter corresponding to each of the plurality of openings. Therefore, since color light in a specific wavelength range can be transmitted through each opening, a full-color display capable of full color display and a brighter display quality can be provided when an electro-optical device substrate is used in the liquid crystal device. be able to.

  Application Example 6 An electro-optical device according to this application example is provided with a first substrate provided with a plurality of pixel electrodes and switching elements corresponding to the pixel electrodes, and opposed to the first substrate. A second substrate disposed; and an electro-optic material layer disposed between the first substrate and the second substrate, wherein the second substrate is a substrate for an electro-optic device according to the application example. It is characterized by that.

  According to the configuration of this application example, the above-described electro-optic device substrate is provided on one of the pair of substrates sandwiching the electro-optic material layer, so that the electro-optic having excellent display brightness and display quality is achieved. An apparatus can be provided.

  Application Example 7 An electronic apparatus according to this application example includes the electro-optical device according to the application example described above.

  According to the configuration of this application example, it is possible to provide an electronic apparatus including an electro-optical device that is excellent in display brightness and display quality.

It is the schematic which shows the structure of the liquid crystal device which concerns on 1st Embodiment. 2 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device according to the first embodiment. FIG. It is a schematic sectional drawing which shows the structure of the liquid crystal device which concerns on 1st Embodiment. It is a graph which shows the relationship between the thickness of a common electrode, and light transmittance. It is a graph which shows the relationship between the thickness of a common electrode, and light transmittance. It is a figure which expands and shows the cross-section of the liquid crystal device which concerns on 1st Embodiment. FIG. 3 is a schematic cross-sectional view showing the method for manufacturing the electro-optical device substrate according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing the method for manufacturing the electro-optical device substrate according to the first embodiment. It is a schematic sectional drawing which shows the structure of the liquid crystal device which concerns on 2nd Embodiment. FIG. 10 is a schematic cross-sectional view illustrating a method for manufacturing an electro-optical device substrate according to a second embodiment. FIG. 10 is a schematic cross-sectional view illustrating a method for manufacturing an electro-optical device substrate according to a second embodiment. It is a schematic sectional drawing which shows the structure of the liquid crystal device which concerns on 3rd Embodiment. It is the schematic which shows the structure of the projector as an electronic device which concerns on 4th Embodiment. It is the schematic which shows the structure of the smart phone as an electronic device which concerns on 5th Embodiment.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. The drawings to be used are appropriately enlarged, reduced or exaggerated so that the part to be described can be recognized. In addition, illustrations of components other than those necessary for the description may be omitted.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
<Electro-optical device>
Here, an active matrix liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example of the electro-optical device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (projector) described later.

  First, a liquid crystal device as an electro-optical device according to the first embodiment will be described with reference to FIGS. 1, 2, and 3. FIG. 1 is a schematic diagram illustrating the configuration of the liquid crystal device according to the first embodiment. Specifically, FIG. 1A is a schematic plan view showing the configuration of the liquid crystal device, and FIG. 1B is a schematic cross-sectional view taken along the line H-H ′ of FIG. FIG. 2 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing the structure of the liquid crystal device according to the first embodiment. Specifically, FIG. 3 is a schematic cross-sectional view taken along the line A-A ′ of FIG. 1.

  As shown in FIGS. 1A and 1B, the liquid crystal device 1 according to the first embodiment includes an element substrate 20 as a first substrate and a counter as a second substrate disposed opposite to the element substrate 20. A substrate 30 and a liquid crystal layer 40 as an electro-optical material layer disposed between the element substrate 20 and the counter substrate 30 are provided. In the present embodiment, the counter substrate 30 corresponds to the electro-optical device substrate of the present invention.

  The liquid crystal device 1 operates in, for example, a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode. The liquid crystal device 1 is a transmissive liquid crystal device that modulates light incident from the counter substrate 30 side and emits the light to the element substrate 20 side.

  As shown in FIGS. 1A and 1B, the element substrate 20 is slightly larger than the counter substrate 30, and both substrates are bonded via a sealing material 42 arranged in a frame shape. The liquid crystal layer 40 is composed of a liquid crystal having positive or negative dielectric anisotropy as an electro-optical material enclosed in a space surrounded by the element substrate 20, the counter substrate 30, and the sealing material 42.

  The sealing material 42 is made of an adhesive such as a thermosetting or ultraviolet curable epoxy resin. Spacers (not shown) are mixed in the sealing material 42 to keep the distance between the element substrate 20 and the counter substrate 30 constant. A frame-shaped light shielding layer 32 provided on the counter substrate 30 is disposed inside the sealing material 42 disposed in a frame shape. The light shielding layer 32 is made of a metal material such as a light-shielding metal or metal oxide.

  Inside the light shielding layer 32 is a display area E in which a plurality of pixels P are arranged. The display area E is an area that substantially contributes to display in the liquid crystal device 1. Although not shown in FIGS. 1A and 1B, the light shielding layer 32 is also provided inside the display area E in a lattice shape so as to partition a plurality of pixels P in a plane. .

  A data line driving circuit 51 and a plurality of external connection terminals 54 are provided outside the sealing material 42 on one side of the element substrate 20 along the one side. Further, an inspection circuit 53 is provided inside the sealing material 42 along the other one side facing the one side. Further, a scanning line driving circuit 52 is provided inside the sealing material 42 along the other two sides that are orthogonal to these two sides and face each other.

  A plurality of wirings 55 that connect the two scanning line driving circuits 52 are provided inside the sealing material 42 on one side where the inspection circuit 53 is provided. Wirings connected to the data line driving circuit 51 and the scanning line driving circuit 52 are connected to a plurality of external connection terminals 54. In addition, a vertical conduction portion 56 is provided at a corner portion of the counter substrate 30 to establish electrical continuity between the element substrate 20 and the counter substrate 30. The arrangement of the inspection circuit 53 is not limited to this, and the inspection circuit 53 may be provided at a position along the inner side of the seal material 42 between the data line driving circuit 51 and the display area E.

  In the following description, the direction along one side where the data line driving circuit 51 is provided is defined as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other is defined as the Y direction. . The direction of the H-H ′ line in FIG. 1A is a direction along the Y direction. Further, a direction orthogonal to the X direction and the Y direction and going upward in FIG. In the present specification, viewing from the normal direction (Z direction) of the surface of the counter substrate 30 of the liquid crystal device 1 is referred to as “plan view”.

  As shown in FIG. 1B, on the liquid crystal layer 40 side of the element substrate 20, a TFT 24 (see FIG. 3) as a switching element provided for each pixel P, a light-transmissive pixel electrode 28, A signal wiring (not shown) and an alignment film 29 covering the pixel electrode 28 are provided. The pixel electrode 28 is made of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

  The counter substrate 30 includes a microlens array substrate 10 as a first member provided with a microlens 14 (see FIG. 3) described later. On the liquid crystal layer 40 side of the counter substrate 30, that is, on the microlens array substrate 10, the optical path length adjusting layer 31 as the second member, the light shielding layer 32, the common electrode (counter electrode) 34, and the common electrode 34 are covered. An alignment film 35 is provided.

  As shown in FIGS. 1A and 1B, the light shielding layer 32 is provided in a frame shape in a region overlapping the scanning line driving circuit 52, the plurality of wirings 55, and the inspection circuit 53 in plan view. The light shielding layer 32 serves to shield light incident from the counter substrate 30 side and prevent malfunctions due to light in peripheral circuits including these drive circuits. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The common electrode 34 is made of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). As shown in FIG. 1A, the common electrode 34 is electrically connected to the wiring on the element substrate 20 side by vertical conduction portions 56 provided at the four corners of the counter substrate 30. The common electrode 34 is provided so as to cover the light path length adjusting layer 31 and the light shielding layer 32 and to be in contact with the light shielding layer 32.

  The alignment film 29 and the alignment film 35 are selected based on the optical design of the liquid crystal device 1. For example, the alignment film 29 and the alignment film 35 may be formed by depositing an organic material such as polyimide and rubbing the surface thereof to perform a process for aligning liquid crystal molecules substantially horizontally, or SiOx (silicon oxide). ) And the like are formed by vapor phase epitaxy and subjected to a treatment for aligning liquid crystal molecules substantially vertically.

  The liquid crystal constituting the liquid crystal layer 40 modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light decreases according to the voltage applied in units of each pixel P. In the normally black mode, the transmittance for incident light increases in accordance with the voltage applied in units of each pixel P, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device 1 as a whole.

  As shown in FIG. 2, in the display area E, the scanning lines 2 and the data lines 3 are formed so as to be insulated from each other. The direction in which the scanning line 2 extends is the X direction, and the direction in which the data line 3 extends is the Y direction. The pixel P is provided corresponding to the intersection of the scanning line 2 and the data line 3. Each pixel P is provided with a pixel electrode 28 and a TFT 24 (Thin Film Transistor) as a switching element.

  A source electrode (not shown) of the TFT 24 is electrically connected to the data line 3 extending from the data line driving circuit 51. Image signals (data signals) S1, S2,..., Sn are supplied to the data line 3 from the data line driving circuit 51 (see FIG. 1) in a line sequential manner. A gate electrode (not shown) of the TFT 24 is a part of the scanning line 2 extending from the scanning line driving circuit 52. The scanning signals G1, G2,..., Gm are supplied to the scanning line 2 from the scanning line driving circuit 52 in a line sequential manner. A drain electrode (not shown) of the TFT 24 is electrically connected to the pixel electrode 28.

  The image signals S1, S2,..., Sn are written to the pixel electrode 28 via the data line 3 at a predetermined timing by turning on the TFT 24 for a certain period. The image signal of a predetermined level written in the liquid crystal layer 40 through the pixel electrode 28 in this manner is constant by the liquid crystal capacitance formed between the common electrode 34 (see FIG. 3) provided on the counter substrate 30. Hold for a period.

  In order to prevent leakage of the held image signals S 1, S 2,..., Sn, the storage capacitor 5 is formed between the capacitor line 4 formed in parallel along the data line 3 and the pixel electrode 28. Is formed and arranged in parallel with the liquid crystal capacitor. Thus, when a voltage signal is applied to the liquid crystal of each pixel P, the alignment state of the liquid crystal changes depending on the applied voltage level. As a result, the light incident on the liquid crystal layer 40 (see FIG. 3) is modulated to enable gradation display.

  As shown in FIG. 3, the element substrate 20 includes a substrate 21, a light shielding layer 22, an insulating layer 23, a TFT 24, an insulating layer 25, a light shielding layer 26, an insulating layer 27, a pixel electrode 28, and an orientation. And a film 29. The substrate 21 is made of a light transmissive material such as glass or quartz.

  The light shielding layer 22 is formed in a lattice shape so as to overlap the upper light shielding layer 26 in plan view. The light shielding layer 22 and the light shielding layer 26 are disposed so as to sandwich the TFT 24 therebetween in the thickness direction (Z direction) of the element substrate 20. The light shielding layer 22 and the light shielding layer 26 are made of a metal material having a light shielding property. By providing the light shielding layer 22 and the light shielding layer 26, the incidence of light on the TFT 24 is suppressed.

  The light shielding layer 22 and the light shielding layer 26 are disposed between adjacent pixels P among the plurality of pixels P. The light shielding layer 22 and the light shielding layer 26 have an opening 22a and an opening 26a corresponding to each pixel P, respectively. The opening 22a and the opening 26a are regions through which light is transmitted.

The insulating layer 23 is provided so as to cover the substrate 21 and the light shielding layer 22. The insulating layer 23 is made of an inorganic material such as SiO ₂ . The TFT 24 is provided on the insulating layer 23. The TFT 24 is a switching element that drives the pixel electrode 28. Although not shown, the TFT 24 includes a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and the like.

  The gate electrode is formed on the element substrate 20 in a region overlapping with the channel region of the semiconductor layer in plan view via a part (gate insulating film) of the insulating layer 25. Although not shown, the gate electrode is electrically connected to the scanning line 2 (see FIG. 2) arranged on the lower layer side through a contact hole, and the TFT 24 is applied by applying a scanning signal to the gate electrode. ON / OFF is controlled.

The insulating layer 25 is provided so as to cover the insulating layer 23 and the TFT 24. The insulating layer 25 is made of an inorganic material such as SiO ₂ , for example. The insulating layer 25 includes a gate insulating film that insulates between the semiconductor layer of the TFT 24 and the gate electrode. The insulating layer 25 relieves surface irregularities caused by the TFT 24. A light shielding layer 26 is provided on the insulating layer 25. An insulating layer 27 made of an inorganic material is provided so as to cover the insulating layer 25 and the light shielding layer 26.

  The pixel electrode 28 is provided on the insulating layer 27 corresponding to each pixel P. The pixel electrode 28 is disposed in a region overlapping the opening 22 a of the light shielding layer 22 and the opening 26 a of the light shielding layer 26 in plan view. The alignment film 29 is provided so as to cover the pixel electrode 28.

  Note that the TFTs 24, electrodes for supplying electric signals to the TFTs 24, and wirings (not shown) such as the scanning lines 2 and the data lines 3 are provided in regions overlapping the light shielding layers 22 and 26 in plan view. The TFT 24 is provided, for example, at the intersection of the lattices of the light shielding layer 22 and the light shielding layer 26, that is, at the four corners of the pixel P. In addition, the structure which these electrodes, wiring, etc. serve as the light shielding layer 22 and the light shielding layer 26 may be sufficient.

<Configuration of substrate for electro-optical device>
The counter substrate 30 as the electro-optical device substrate according to the first embodiment includes a microlens array substrate 10 as a first member, an optical path length adjustment layer 31 as a second member, a light shielding layer 32, and a common electrode. 34 and an alignment film 35. The microlens array substrate 10 includes a substrate 11 and a lens layer 13. The microlens array substrate 10 is arranged so that the opening side of the recess 12 provided in the substrate 11 faces the element substrate 20.

  The substrate 11 is made of a light transmissive material such as glass or quartz. The substrate 11 has a plurality of recesses 12 formed on the surface 11a which is the surface on the liquid crystal layer 40 side. The recess 12 is arranged corresponding to each pixel P. The recess 12 is formed in a curved surface shape that tapers toward the bottom.

The lens layer 13 is formed on the surface 11 a side of the substrate 11 so as to bury the recess 12. The lens layer 13 is made of a material having optical transparency and a light refractive index different from that of the substrate 11. More specifically, the lens layer 13 is made of a material having a higher refractive index than that of the substrate 11. Examples of the material of the lens layer 13 include inorganic materials such as SiON and Al ₂ O ₃ and resin materials.

  By embedding the concave portion 12 with the lens layer 13, a convex microlens 14 is configured. Each microlens 14 is arranged corresponding to each pixel P. These microlenses 14 constitute a microlens array MLA.

The optical path length adjustment layer 31 is provided on the microlens array substrate 10. The optical path length adjustment layer 31 is light transmissive and has substantially the same refractive index as that of the substrate 11. The optical path length adjusting layer 31 is made of, for example, an inorganic material having electrical insulation such as a silicon oxide film (SiO ₂ ). The optical path length adjustment layer 31 has a function of adjusting the focal length of the microlens 14 to a desired value. Therefore, the layer thickness of the optical path length adjusting layer 31 is appropriately set based on optical conditions such as the focal length of the microlens 14 corresponding to the wavelength of light.

  The optical path length adjustment layer 31 has a groove 31b formed in the surface 31a on the liquid crystal layer 40 side. The grooves 31b are provided outside the display area E (see FIG. 1A) in a plan view, and are provided in a grid pattern in an area overlapping the light shielding layer 22 and the light shielding layer 26 inside the display area E. . The light shielding layer 32 is provided inside the groove 31b.

  The light shielding layer 32 is provided outside the display region E in a plan view, and is provided in a region overlapping the light shielding layer 22 and the light shielding layer 26 inside the display region E. The light shielding layer 32 is adjacent to the plurality of pixels P. It is arranged between the pixels P. The light shielding layer 32 has an opening 32 a corresponding to each pixel P. The opening 32a is a region through which light is transmitted. The light shielding layer 32 is made of a metal material such as a light-shielding metal or metal oxide, and is made of, for example, titanium nitride (TiN).

  The common electrode 34 is provided so as to cover the optical path length adjustment layer 31 and the light shielding layer 32. The common electrode 34 is formed across a plurality of pixels P. As described above, the common electrode 34 is made of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The common electrode 34 is in contact with the surface 32 b of the light shielding layer 32. Therefore, the common electrode 34 is electrically connected to the light shielding layer 32. The thickness T of the common electrode 34 is 22 nm or less.

  The alignment film 35 is provided so as to cover the common electrode 34. The liquid crystal layer 40 is sealed between the alignment film 29 on the element substrate 20 side and the alignment film 35 on the counter substrate 30 side.

  In the liquid crystal device 1 according to the first embodiment, light is incident from the counter substrate 30 side (microlens array substrate 10 side), that is, from the surface 11 b side that is the surface of the substrate 11 opposite to the liquid crystal layer 40. The light is condensed by the microlens 14. For example, of the light incident on the microlens 14 from the surface 11b side, the incident light L1 incident along the optical axis passing through the planar center of the pixel P travels straight through the microlens 14 and passes through the liquid crystal layer 40. It passes through and is emitted to the element substrate 20 side.

  The incident light L2 incident on the peripheral edge of the microlens 14 from a region overlapping the light shielding layer 32 in a plan view outside the incident light L1 is shielded by the light shielding layer 32 as indicated by a broken line if it goes straight as it is. However, it is refracted toward the planar center of the pixel P2 due to the difference in the optical refractive index between the substrate 11 and the lens layer 13.

  In the liquid crystal device 1, the incident light L <b> 2 that is shielded by the light shielding layer 32 when traveling straight in this way is also incident into the opening 32 a of the light shielding layer 32 by the condensing action of each microlens 14, thereby causing the liquid crystal layer 40 to enter. Can be passed. As a result, since the amount of light emitted from the element substrate 20 side can be increased, the light utilization efficiency can be increased.

  In the liquid crystal device 1, the light shielding layer 32 is provided inside the groove 31 b of the optical path length adjusting layer 31. Therefore, compared to the case where the light shielding layer 32 is provided on the surface 31a of the optical path length adjusting layer 31, the light shielding layer 32 can be brought closer to the microlens array substrate 10 side, so that the aperture ratio of the light shielding layer 32 is increased. Is possible. Then, by bringing the light shielding layer 32 closer to the microlens array substrate 10 side, it is possible to reduce the incidence of light from an oblique direction on the region of the adjacent pixel P.

<Common electrode thickness and light transmittance>
Here, in the counter substrate 30 as the electro-optical device substrate according to the first embodiment, the common electrode 34 is thinner than the electro-optical device substrate in the conventional liquid crystal device. More specifically, for example, in the liquid crystal device described in Patent Document 1, the thickness of the common electrode is about 50 nm to 200 nm. However, in the liquid crystal device 1 according to the present embodiment, the thickness T of the common electrode 34 is 22 nm or less. The reason why the thickness T of the common electrode 34 is made thinner than the conventional one will be described with reference to FIGS.

  4 and 5 are graphs showing the relationship between the thickness of the common electrode and the light transmittance. More specifically, in each of FIGS. 4A, 4B, and 5C and FIGS. 5A, 5B, and 5C, the thickness T of the common electrode 34 is set to 17 respectively. It is a figure which shows the measurement result of the transmittance | permeability of light when making it change into 0.5 nm, 20 nm, 22 nm, 50 nm, 83.5 nm, and 140 nm. In each figure, the horizontal axis represents the light wavelength (nm), and the vertical axis represents the transmittance (%).

  As will be described later, when the liquid crystal device 1 is used as a liquid crystal light valve of the projector 100 (see FIG. 13), each color light of red light (R), green light (G), and blue light (B) causes the liquid crystal device 1 to be used. To Penetrate. Therefore, it is desirable that the liquid crystal device 1 transmits each of these three color lights satisfactorily. The wavelength range of red light (R) is about 600 nm to 650 nm, the wavelength range of green light (G) is about 500 nm to 550 nm, and the wavelength range of blue light (B) is about 430 nm to 480 nm.

  As shown in FIG. 4A, in the case where the thickness T of the common electrode 34 is 17.5 nm, in the respective wavelength ranges of red light (R), green light (G), and blue light (B), The transmittance is as good as 95% or more. As shown in FIG. 4B, when the thickness T of the common electrode 34 is 20 nm, the transmittance slightly decreases in the wavelength range of the blue light (B) as compared with the case where the thickness T is 17.5 nm. However, the light transmittance is good. As shown in FIG. 4C, when the thickness T of the common electrode 34 is 22 nm, although the transmittance further decreases in the wavelength range of the blue light (B), the light transmittance is as good as 90% or more. is there.

  As shown in FIG. 5A, when the thickness T of the common electrode 34 is 50 nm, the light transmittance is reduced in each wavelength region as compared with the case where the thickness T is 22 nm or less, and red light (R ) Has a light transmittance of 90% or more, but in the wavelength range of blue light (B) and green light (G), the light transmittance is less than 90%. In addition, the difference between the light transmittance in the blue light (B) wavelength region and the light transmittance in the red light (R) wavelength region becomes large.

  As shown in FIG. 5B, when the thickness T of the common electrode 34 is 83.5 nm, the light transmittance is less than 90% in each wavelength region. Further, as shown in FIG. 5C, when the thickness T of the common electrode 34 is 140 nm, the light transmittance is 95% or more in the wavelength region of green light (G), but red light (R). In the wavelength region of blue light (B) and light, the transmittance of light decreases, and the difference between the transmittance of light in the wavelength region of blue light (B) and the transmittance of light in the wavelength region of green light (G) is It gets bigger.

  Thus, when the light transmittance decreases, the image projected from the projector 100 becomes dark. In addition, when there is a large variation in the light transmittance in the wavelength range of each color light, white appears to be dull or the hue appears to be shifted in the pixel P displayed in white.

  According to the measurement results shown in FIGS. 4 and 5, when the thickness T of the common electrode 34 is 22 nm or less, the light transmittance is good, and the variation in the light transmittance in the wavelength range of each color light is small. However, when the thickness T of the common electrode 34 is 50 nm or more, the light transmittance in at least one of the color light wavelength ranges is lowered, and the variation in the light transmittance due to the color light is increased.

  In the liquid crystal device 1 (counter substrate 30) according to the first embodiment, the thickness T of the common electrode 34 is set to 22 nm or less based on the above measurement result. Therefore, in the liquid crystal device 1, compared with the liquid crystal device described in Patent Document 1, it is possible to brighten the projected image, and to suppress the white color from appearing dull or the hue from being shifted in the white display pixel P. be able to.

  On the other hand, when the thickness T of the common electrode 34 is reduced, the resistance value of the common electrode 34 is increased. Therefore, in the liquid crystal device 1 according to the first embodiment, as shown in FIG. 3, the common electrode 34 and the light shielding layer 32 are electrically connected by providing the common electrode 34 so as to be in contact with the light shielding layer 32. ing. The light shielding layer 32 is disposed outside the display area E (see FIG. 1A) and also disposed between the adjacent pixels P inside the display area E. The common electrode 34 is seen in plan view. Is provided in a region that substantially overlaps with. Thereby, even if the thickness T of the common electrode 34 is reduced, an increase in the resistance value of the common electrode 34 can be suppressed.

  In addition, when the thickness T of the common electrode 34 is reduced, the common electrode 34 is changed when the distance (step) between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 located below the common electrode 34 is large. When forming a film, there is a possibility that a discontinuous portion is generated or a crack is generated. Therefore, in the liquid crystal device 1 according to the first embodiment, the distance between the surface 31a of the optical path length adjustment layer 31 and the surface 32b of the light shielding layer 32 is set to be equal to or less than the thickness T of the common electrode.

  The thickness of the common electrode 34 in the liquid crystal device 1 (counter substrate 30) and the distance between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 will be further described with reference to FIG. FIG. 6 is an enlarged view showing a cross-sectional structure of the liquid crystal device according to the first embodiment. Specifically, FIG. 6 is a partial cross-sectional view along the line A-A ′ in FIG. 1, and the vertical direction (Z direction) is reversed from FIG. 3.

  As shown in FIGS. 6A, 6 </ b> B, and 6 </ b> C, in the liquid crystal device 1 according to the first embodiment, as described above, the light shielding layer 32 is disposed inside the groove 31 b of the optical path length adjustment layer 31. Is provided. A common electrode 34 is provided so as to cover the optical path length adjusting layer 31 and the light shielding layer 32.

  In the liquid crystal device 1 (counter substrate 30), as shown in FIG. 6A, the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 may be substantially flat surfaces. When the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 are substantially flat surfaces, the upper common electrode 34 is also formed substantially flat.

  In the liquid crystal device 1 (counter substrate 30), as shown in FIG. 6B, the light shielding layer 32 protrudes from the surface 31a of the optical path length adjustment layer 31, and the surface 31a of the optical path length adjustment layer 31 and the light shielding layer 32 A step may be formed on the surface 32b. However, in this case, the distance (step) D1 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is set to be equal to or less than the thickness T of the common electrode 34.

  As shown in FIG. 6B, the light shielding layer 32 protrudes from the surface 31 a of the optical path length adjustment layer 31, so that a convex strip is formed on the surface of the common electrode 34 in a region overlapping the light shielding layer 32. It will be. Even if the common electrode 34 is formed in this way, the distance D1 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is set to be equal to or less than the thickness T of the common electrode 34. Generation of discontinuous portions and cracks can be suppressed.

  In the liquid crystal device 1 (counter substrate 30), as shown in FIG. 6C, the light shielding layer 32 is provided so as to be recessed from the surface 31a of the optical path length adjusting layer 31, and the light shielding layer 32 and the surface 31a of the optical path length adjusting layer 31 are shielded. A step may be formed on the surface 32 b of the layer 32. However, also in this case, the distance (step) D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is set to be equal to or less than the thickness T of the common electrode 34.

  As shown in FIG. 6C, the light shielding layer 32 is recessed from the surface 31 a of the optical path length adjusting layer 31, so that a concave portion is formed on the surface of the common electrode 34 in a region overlapping the light shielding layer 32. It will be. Even if the common electrode 34 is formed in this way, the distance D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is set to be equal to or less than the thickness T of the common electrode 34, so that Generation of discontinuous portions and cracks can be suppressed.

  6A, 6B, and 6C, since the light shielding layer 32 is provided inside the groove 31b of the optical path length adjusting layer 31, the thickness of the light shielding layer 32 is not limited. Therefore, the resistance value of the common electrode 34 can be reduced by increasing the thickness of the light shielding layer 32. Further, by increasing the thickness of the light shielding layer 32, the light shielding property is also improved.

  In the present embodiment, as shown in FIG. 6A, it is preferable that the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 are substantially flat surfaces. When the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 are substantially flat surfaces, the occurrence of discontinuous portions and cracks in the common electrode 34 can be more reliably suppressed.

<Method for Manufacturing Electro-Optical Device Substrate>
Next, a manufacturing method of the counter substrate 30 as the electro-optical device substrate according to the first embodiment will be described with reference to FIGS. 7 and 8 are schematic cross-sectional views illustrating a method for manufacturing the substrate for an electro-optical device according to the first embodiment. Each of FIGS. 7 and 8 corresponds to a schematic cross-sectional view along the line AA ′ in FIG. 1, and the vertical direction (Z direction) is reversed from FIG.

  Although not shown, in the manufacturing process of the counter substrate 30, processing is performed on a large substrate (mother substrate) that can take a plurality of counter substrates 30, and the mother substrate is finally cut into individual pieces. Thus, a plurality of counter substrates 30 are obtained. Accordingly, in each step described below, processing is performed in the state of the mother substrate before being singulated, but here, processing on the individual counter substrate 30 in the mother substrate will be described.

  First, as shown in FIG. 7A, a mask layer 91 is formed of, for example, polycrystalline silicon on a surface 11a of a substrate 11 made of quartz or the like and having optical transparency. Then, for example, patterning is performed using a photolithography technique to form an opening 91 a in the mask layer 91. The opening 91a is formed at a position corresponding to the planar center position of the region of the pixel P described above. FIG. 7A shows a state after the mask layer 91 is patterned.

  Next, as shown in FIG. 7B, the substrate 11 is subjected to an isotropic etching process through the opening 91 a of the mask layer 91, thereby forming the recess 12 in the substrate 11. For example, wet etching using an etchant such as a hydrofluoric acid solution is used as the isotropic etching process.

  By this etching process, the recess 11 is formed by isotropic etching from the surface 11a side of the substrate 11 with the opening 91a as the center. The recess 12 is formed concentrically with the opening 91a as the center in plan view. Subsequently, as shown in FIG. 7C, the mask layer 91 is removed from the substrate 11.

  Next, as illustrated in FIG. 7D, the lens layer 13 is formed on the surface 11 a side of the substrate 11. The lens layer 13 is formed so as to embed the concave portion 12 using an inorganic material having light transmittance and a higher refractive index than the substrate 11. The lens layer 13 can be formed using, for example, a CVD (Chemical Vapor Deposition) method. On the upper surface of the lens layer 13, a step between the recess 12 and the recess 12 is reflected.

  Next, the lens layer 13 is flattened. In this step, the lens layer 13 is planarized by polishing the upper surface of the lens layer 13 using, for example, CMP (Chemical Mechanical Polishing) processing. Note that the planarization method in the planarization step is not limited to the CMP process, and an etch back method may be used. The layer thickness of the lens layer 13 is appropriately set based on the optical conditions such as the focal length of the microlens 14 corresponding to the wavelength of light, together with the layer thickness of the optical path length adjusting layer 31. Thereby, the upper surface of the lens layer 13 is flattened, and the microlens array substrate 10 is formed.

  Next, as shown in FIG. 8A, the optical path length adjustment layer 31 is formed on the lens layer 13 of the microlens array substrate 10. The optical path length adjustment layer 31 is formed using, for example, a CVD method using a silicon oxide film as a material.

  Next, as shown in FIG. 8B, a groove 31 b that is recessed from the surface 31 a is formed in the optical path length adjustment layer 31. Although illustration is omitted, a mask layer is formed on the surface 31a of the optical path length adjusting layer 31, and an opening is formed in a region of the mask layer where the light shielding layer 32 is to be formed. Then, the groove 31b is formed by performing an anisotropic etching process such as dry etching on the optical path length adjusting layer 31 through the opening of the mask layer.

  Next, as shown in FIG. 8C, a light shielding film to be the light shielding layer 32 is formed so as to cover the surface 31 a of the optical path length adjustment layer 31 and fill the groove 31 b. The light shielding film (light shielding layer 32) is formed, for example, by depositing TiN as a material using a sputtering method. A step between the surface 31a and the groove 31b is reflected on the upper surface of the light shielding film (light shielding layer 32).

  Next, as shown in FIG. 8D, portions of the light shielding film (light shielding layer 32) other than the portion inside the groove 31b of the optical path length adjusting layer 31 are removed. In this step, a so-called damascene method can be used. In the damascene method, by polishing the upper surface of the light shielding film (light shielding layer 32) using CMP processing, the portion of the light shielding film (light shielding layer 32) covering the surface 31a of the optical path length adjusting layer 31 is removed, and the groove The portion embedded in 31b remains. Thereby, as shown to Fig.6 (a), the space | interval of the surface 31a of the optical path length adjustment layer 31 and the surface 32b of the light shielding layer 32 can be made as small as possible, and it can be set as a substantially flat surface.

  In the step shown in FIG. 8D, the light shielding layer 32 is polished and the surface 31a of the optical path length adjusting layer 31 is also polished, so that the remaining portion of the light shielding layer 32 is the surface of the optical path length adjusting layer 31. It may be in a state protruding from 31a. However, in such a case, as shown in FIG. 6B, the distance D1 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34. To do.

  Further, in the step shown in FIG. 8D, the remaining portion of the light shielding layer 32 may be recessed from the surface 31 a of the optical path length adjusting layer 31 by polishing the light shielding layer 32. However, in such a case, as shown in FIG. 6C, the distance D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34. To do.

  Next, as shown in FIG. 8E, the common electrode 34 is formed so as to cover the optical path length adjustment layer 31 and the light shielding layer 32. The common electrode 34 is formed, for example, by depositing with a film thickness of 22 nm or less by using a sputtering method with ITO as a material. Subsequently, although not shown, an alignment film 35 is formed on the common electrode 34. Thus, the counter substrate 30 is completed.

  As described above, according to the first embodiment, the following effects can be obtained.

  (1) Since the light shielding layer 32 is made of a metal material and the common electrode 34 is provided in contact with the light shielding layer 32, the common electrode 34 is electrically connected to the light shielding layer 32. Therefore, even if the thickness T of the common electrode 34 is reduced to 22 nm or less where good brightness is obtained, an increase in the resistance value of the common electrode 34 can be suppressed by being in contact with the light shielding layer 32. Since the distances (steps) D1 and D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 which are lower layers of the common electrode 34 are equal to or less than the thickness T of the common electrode 34, Even if the thickness T is reduced, the occurrence of cracks and the like due to the distances (steps) D1 and D2 between the surface 31a of the optical path length adjusting layer 31 and the surface 32b of the light shielding layer 32 can be suppressed. Accordingly, it is possible to suppress the increase in the resistance value of the common electrode 34 and the generation of cracks in the common electrode 34 and to reduce the thickness T of the common electrode 34. As a result, the bright liquid crystal device 1 with high display quality can be provided.

  (2) Since the groove 31b is provided on the surface 31a of the optical path length adjustment layer 31, and the light shielding layer 32 is provided inside the groove 31b, the optical path length adjustment layer can be obtained without reducing the thickness of the light shielding layer 32. The distances (steps) D1, D2 between the surface 31a of 31 and the surface 32b of the light shielding layer 32 can be reduced. In other words, compared with the case where the light shielding layer 32 is provided on the surface 31a of the optical path length adjusting layer 31, it is possible to increase the thickness of the light shielding layer 32 and reduce the resistance value of the common electrode 34. Become. Therefore, even if the thickness T of the common electrode 34 is reduced, an increase in the resistance value of the common electrode 34 can be more reliably suppressed by the light shielding layer 32. Further, by increasing the thickness of the light shielding layer 32, the light shielding property is also improved.

  (3) The microlens 14 is provided on the microlens array substrate 10 corresponding to each pixel P (opening 32a). For this reason, a part of the light that is incident on the microlens array substrate 10 (substrate 11) side and goes straight as it is and is shielded by the light shielding layer 32 is put into the region (opening 32a) of each pixel P by the microlens 14. Since it can condense, the utilization efficiency of light can be improved. Further, when the light shielding layer 32 is provided inside the groove 31b of the optical path length adjustment layer 31, the light shielding layer 32 is made smaller than when the light shielding layer 32 is provided on the surface 31a of the optical path length adjustment layer 31. Since it can be brought closer to the lens array substrate 10 side, the aperture ratio of the light shielding layer 32 can be increased. Then, by bringing the light shielding layer 32 closer to the microlens array substrate 10 side, it is possible to reduce the incidence of light from an oblique direction on the region (opening 32a) of the adjacent pixel P. Thereby, it is possible to provide the liquid crystal device 1 that is brighter and has higher display quality.

(Second Embodiment)
<Electro-optical device>
The liquid crystal device as the electro-optical device according to the second embodiment is different from the liquid crystal device according to the first embodiment in that the counter substrate includes a prism substrate provided with a reflective portion (prism). However, other configurations are almost the same. In addition, about the component which is common in 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  The configuration of the liquid crystal device according to the second embodiment will be described with reference to FIG. FIG. 9 is a schematic cross-sectional view showing the configuration of the liquid crystal device according to the second embodiment. Specifically, FIG. 9 corresponds to a schematic cross-sectional view along the line A-A ′ (X direction) in FIG. 1.

  As shown in FIG. 9, the liquid crystal device 1A according to the second embodiment includes an element substrate 20 as a first substrate, a counter substrate 30A as a second substrate, and a liquid crystal layer 40. In the present embodiment, the counter substrate 30A corresponds to the electro-optical device substrate of the present invention.

<Configuration of substrate for electro-optical device>
The counter substrate 30A as the electro-optical device substrate according to the second embodiment includes a prism substrate 60 as a first member provided with a prism 65. On the liquid crystal layer 40 side of the counter substrate 30A, that is, on the prism substrate 60, a planarizing layer 33 as a second member, a light shielding layer 32, a common electrode 34, and an alignment film 35 are provided.

  The prism substrate 60 includes a substrate 61, a prism (reflecting portion) 65 provided on the surface 61a of the substrate 61 on the liquid crystal layer 40 side, and a first sealing layer 63 and a second sealing layer stacked on the surface 61a. 64. The substrate 61 is made of a light transmissive material such as glass or quartz.

  The prism 65 has a groove 62 formed on the surface 61 a side of the substrate 61. The groove 62 is formed in a V shape in a sectional view so as to open toward the liquid crystal layer 40. The cross section of the groove 62 has a substantially isosceles triangular shape having an opening 62c opening in the surface 61a as a base and two V-shaped inclined surfaces 62a as two sides. The inside of the groove 62 is a hollow portion 62b in a hollow state.

  The grooves 62 are provided in a lattice shape so as to overlap the light shielding layer 22 and the light shielding layer 26 in plan view. The apex of the substantially isosceles triangle shape of the groove 62 is located at the center of the light shielding layer 22 and the light shielding layer 26 in the width direction. The width of the groove 62 (the length of the base of the approximately isosceles triangle shape) is set to be the same as or slightly wider than the width of the light shielding layer 22 and the light shielding layer 26.

  The first sealing layer 63 is provided so as to cover the surface 61 a of the substrate 61 and close the opening 62 c of the groove 62. The first sealing layer 63 is in an overhanging state with respect to the groove 62, and is formed so as not to enter the inside from the opening 62 c of the groove 62, for example. The first sealing layer 63 is provided with a through hole 63a communicating with the hollow portion 62b with an opening area smaller than that of the opening 62c in a region overlapping the opening 62c of the groove 62.

  The through-hole 63a is arranged so as to overlap with the intersection of the lattice-shaped light shielding layer 22 and the light shielding layer 26 in plan view. The second sealing layer 64 is formed so as to cover the first sealing layer 63 and closes the through hole 63a. The first sealing layer 63 and the second sealing layer 64 are made of an inorganic material such as a silicon oxide film and have light transmittance.

  The groove 62 is sealed by the first sealing layer 63 and the second sealing layer 64, and forms a hollow portion 62 b in the hollow state inside the groove 62. The hollow part 62b is in a state close to a vacuum, for example. The prism 65 reflects light incident from the surface 61 b opposite to the surface 61 a of the substrate 61 toward the liquid crystal layer 40 side at the boundary surface (inclined surface 62 a) between the substrate 61 and the groove 62. The hollow portion 62b may be an air layer.

  The planarization layer 33 is provided on the prism substrate 60 (second sealing layer 64). The planarization layer 33 is made of, for example, an inorganic material such as a silicon oxide film, and has light transmittance and electrical insulation. The planarizing layer 33 has a groove 33b formed in the surface 33a on the liquid crystal layer 40 side. The grooves 33b are provided outside the display region E (see FIG. 1A) in a plan view, and are provided in a grid pattern in a region overlapping the light shielding layer 22 and the light shielding layer 26 inside the display region E. . The light shielding layer 32 is provided inside the groove 33b.

  As in the first embodiment, the light shielding layer 32 is provided outside the display region E in a plan view, and is provided in a region overlapping the light shielding layer 22 and the light shielding layer 26 inside the display region E. It arrange | positions between the adjacent pixels P among the some pixels P. FIG.

  The common electrode 34 is provided so as to cover the planarization layer 33 and the light shielding layer 32. Similar to the first embodiment, the common electrode 34 is in contact with the surface 32 b of the light shielding layer 32 and is electrically connected to the light shielding layer 32. The thickness T of the common electrode 34 is 22 nm or less. Although not shown, the distance (step) between the surface 33 a of the planarization layer 33 and the surface 32 b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34.

  In the liquid crystal device 1A according to the second embodiment, light incident from the counter substrate 30A (prism substrate 60) side is light-modulated for each pixel P by the liquid crystal layer 40 and then emitted to the element substrate 20 side. For example, the incident light L1 incident along the optical axis passing through the planar center of the pixel P region (opening 32a) travels straight in the pixel P region, passes through the liquid crystal layer 40, and passes through the element substrate. 20 side is injected.

  On the other hand, when the incident light L2 incident from the outside of the incident light L1 travels straight as it is, the incident light L2 deviates from the region of the pixel P and is shielded by the light shielding layer 32. In the liquid crystal device 1 </ b> A, such incident light L <b> 2 is reflected by the prism 65 to be directed toward the region of the pixel P. As described above, in the liquid crystal device 1A, the incident light is efficiently guided toward the area of the pixel P by the prism 65, so that the utilization efficiency of the incident light can be increased.

  In the liquid crystal device 1A according to the second embodiment, as in the first embodiment, the common electrode 34 is electrically connected to the light shielding layer 32 made of a metal material. The thickness T is 22 nm or less. The distance (step) between the surface 33 a of the planarization layer 33, which is the lower layer of the common electrode 34, and the surface 32 b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34. Therefore, as in the first embodiment, it is possible to provide a liquid crystal device 1A that is bright and has high display quality by preventing the resistance value of the common electrode 34 from increasing and cracks and the like from being generated in the common electrode 34. it can.

<Method for Manufacturing Electro-Optical Device Substrate>
Next, a manufacturing method of the counter substrate 30A as the electro-optical device substrate according to the second embodiment will be described with reference to FIGS. 10 and 11 are schematic cross-sectional views illustrating a method for manufacturing an electro-optical device substrate according to the second embodiment. Each of FIGS. 10 and 11 corresponds to a schematic cross-sectional view along the line AA ′ in FIG. 1, and the vertical direction (Z direction) is reversed from FIG. 3.

  First, as shown in FIG. 10A, a mask layer 92 is formed on a surface 61a of a light-transmitting substrate 61 made of quartz or the like, and an opening 92a is formed in the mask layer 92 using a photolithography technique. . As the mask layer 92, for example, a hard mask made of a metal material such as W (tungsten) or WSi (tungsten silicide) is used to form the prism 65 having a large depth ratio to the width of the opening 62c of the groove 62. Are preferably used.

  Next, as shown in FIG. 10B, the substrate 61 is etched through the opening 92a of the mask layer 92, whereby the surface 61a of the substrate 61 has an opening 62c and an inclined surface 62a. A groove 62 is formed. As the etching process, for example, a dry etching process using an ICP (ICP-RIE / Inductive Coupled Plasma-RIE) dry etching apparatus capable of forming high-density plasma is used. Here, it is preferable to use etching conditions that increase the etching selectivity of the substrate 61 with respect to the mask layer 92.

  Next, as shown in FIG. 10C, after removing the mask layer 92 from the substrate 61, a sacrificial layer 93 that covers the surface 61a of the substrate 61 and fills the inside of the groove 62 to close the opening 62c is formed. . As a material of the sacrificial layer 93, for example, silicon can be used. As a method for forming the sacrificial layer 93, for example, a CVD (Chemical Vapor Deposition) method can be used.

  Next, as shown in FIG. 10D, for example, a portion of the sacrificial layer 93 located outside the inside of the groove 62 is removed by a damascene method using a CMP process. As a result, a portion of the sacrificial layer 93 that fills the inside of the groove 62 remains.

  Next, as shown in FIG. 11A, a first sealing layer 63 is formed so as to cover the surface 61a of the substrate 61 and the sacrificial layer 93 (groove 62). The first sealing layer 63 is formed of an inorganic material such as a silicon oxide film. Subsequently, a through hole 63 a that reaches the sacrificial layer 93 is formed at a position overlapping the sacrificial layer 93 (groove 62) of the first sealing layer 63. Thereby, the sacrificial layer 93 is exposed in the through-hole 63a.

  Next, as shown in FIG. 11B, the sacrificial layer 93 embedded in the groove 62 is removed. In this step, a dry etching process using, for example, a fluorine-based gas as an etching gas is performed through the through hole 63a of the first sealing layer 63. Thereby, the sacrificial layer 93 is selectively etched and removed from the inside of the groove 62.

  Next, as shown in FIG. 11C, a second sealing layer 64 that covers the first sealing layer 63 and closes the through hole 63a is formed. The second sealing layer 64 is formed of, for example, an inorganic material such as a silicon oxide film similarly to the first sealing layer 63. Thereby, the through hole 63a of the first sealing layer 63 is closed, and the inside of the groove 62 is sealed in a hollow state to form a hollow portion 62b. As a result, a prism 65 is formed on the substrate 61.

  Next, as illustrated in FIG. 11D, the planarization layer 33 is formed on the second sealing layer 64 of the prism substrate 60. The planarization layer 33 is formed using, for example, a CVD method using a silicon oxide film as a material. Subsequently, a groove 33 b recessed from the surface 33 a is formed in the planarizing layer 33. Although illustration is omitted, after that, a light-shielding film to be the light-shielding layer 32 is formed on the planarizing layer 33 in the same manner as in the first embodiment, and the upper surface of the light-shielding film (light-shielding layer 32) is formed using a damascene method. Grind. Further, by forming the common electrode 34 and the alignment film 35 on the planarizing layer 33 and the light shielding layer 32, the counter substrate 30A is obtained. Note that, instead of the planarization layer 33, a structure having a light-transmitting substrate may be used.

  As described above, according to the second embodiment, the following effects can be obtained.

  (1) The common electrode 34 is electrically connected to the light shielding layer 32 made of a metal material, and the thickness T of the common electrode 34 is 22 nm or less. The distance (step) between the surface 33 a of the planarization layer 33, which is the lower layer of the common electrode 34, and the surface 32 b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34. Therefore, as in the first embodiment, it is possible to provide a liquid crystal device 1A that is bright and has high display quality by preventing the resistance value of the common electrode 34 from increasing and cracks and the like from being generated in the common electrode 34. it can.

  (2) Since the groove 33b is provided on the surface 33a of the planarization layer 33 and the light shielding layer 32 is provided inside the groove 33b, the planarization layer 33 can be formed without reducing the thickness of the light shielding layer 32. The distance (step) between the surface 33a and the surface 32b of the light shielding layer 32 can be reduced. In other words, compared to the case where the light shielding layer 32 is provided on the surface 33a of the planarization layer 33, it is possible to increase the thickness of the light shielding layer 32 and reduce the resistance value of the common electrode 34. . Therefore, even if the thickness T of the common electrode 34 is reduced, an increase in the resistance value of the common electrode 34 can be more reliably suppressed by the light shielding layer 32. Further, the light shielding property is improved by increasing the thickness of the light shielding layer.

  (3) The prism 65 is provided between adjacent pixels P (opening 32a) on the prism substrate 60. For this reason, a part of the light that is out of the area of each pixel P (opening 32a) and is shielded by the light shielding layer 32 is reflected by the prism 65 and directed into the area of each pixel P (opening 32a). Therefore, the light utilization efficiency can be improved. Further, when the light shielding layer 32 is provided inside the groove 33 b of the planarization layer 33, the light shielding layer 32 is disposed on the prism substrate 60 as compared with the case where the light shielding layer 32 is provided on the surface 33 a of the planarization layer 33. Since it can be brought closer to the side, the aperture ratio of the light shielding layer 32 can be increased.

(Third embodiment)
<Electro-optical device>
The liquid crystal device as the electro-optical device according to the third embodiment is different from the liquid crystal device according to the above embodiment in that the counter substrate includes a color filter substrate provided with a color filter. The configuration is almost the same. In addition, about the component which is common in 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  The configuration of the liquid crystal device according to the third embodiment will be described with reference to FIG. FIG. 12 is a schematic cross-sectional view showing the configuration of the liquid crystal device according to the third embodiment. Specifically, FIG. 12 corresponds to a schematic cross-sectional view along the line A-A ′ (X direction) in FIG. 1.

  As shown in FIG. 12, the liquid crystal device 1B according to the third embodiment includes an element substrate 20 as a first substrate, a counter substrate 30B as a second substrate, and a liquid crystal layer 40. In the present embodiment, the counter substrate 30B corresponds to the electro-optical device substrate of the present invention.

  The liquid crystal device 1B according to the third embodiment includes a pixel P (R) that transmits light in the red (R) wavelength region, a pixel P (G) that transmits light in the green (G) wavelength region, And a pixel P (B) that transmits light in a blue (B) wavelength region. In the liquid crystal device 1B, a pixel group which is one unit for forming an image is configured by the pixels P (R), P (G), and P (B). As a result, the liquid crystal device 1B can perform full color display.

<Configuration of substrate for electro-optical device>
The counter substrate 30 </ b> B as the electro-optical device substrate according to the third embodiment includes a color filter substrate 70 as a first member provided with a color filter 73. On the liquid crystal layer 40 side of the counter substrate 30 </ b> B, that is, on the color filter substrate 70, a planarizing layer 33 as a second member, a light shielding layer 32, a common electrode 34, and an alignment film 35 are provided.

  The color filter substrate 70 includes a substrate 71, partition walls 72 provided on the surface 71 a of the substrate 71 on the liquid crystal layer 40 side, and a color filter 73. The substrate 71 is made of a light-transmitting material such as glass or quartz.

  The partition walls 72 are provided in a lattice shape so as to overlap the light shielding layer 22 and the light shielding layer 26 in plan view. The partition wall 72 is made of, for example, a light shielding resin material. The partition 72 has an opening 72a corresponding to the area of the pixels P (R), P (G), and P (B), and the color filter 73 is partitioned by the opening 72a.

  The color filter substrate 70 corresponds to the color filter 73R corresponding to the red (R) wavelength range, the color filter 73G corresponding to the green (G) wavelength range, and the blue (B) wavelength range as the color filter 73. Color filter 73B. The color filters 73R, 73G, 73B are arranged corresponding to the pixels P (R), P (G), P (B).

  The planarization layer 33 is made of, for example, an inorganic material such as a silicon oxide film or a resin material, and has light transmittance and electrical insulation. The planarizing layer 33 has a groove 33b formed in the surface 33a on the liquid crystal layer 40 side. The grooves 33b are provided in a lattice shape in a region overlapping the light shielding layer 22 and the light shielding layer 26 in plan view. The light shielding layer 32 is provided inside the groove 33b.

  The common electrode 34 is provided so as to cover the planarization layer 33 and the light shielding layer 32. The common electrode 34 is in contact with the surface 32 b of the light shielding layer 32 and is electrically connected to the light shielding layer 32 as in the above embodiment. The thickness T of the common electrode 34 is 22 nm or less. Although not shown, the distance (step) between the surface 33 a of the planarization layer 33 and the surface 32 b of the light shielding layer 32 is equal to or less than the thickness T of the common electrode 34.

  In the liquid crystal device 1B according to the third embodiment, light incident from the counter substrate 30B (color filter substrate 70) side is transmitted through one of the color filters 73R, 73G, and 73B. Light corresponding to each wavelength band of red (R), green (G), and blue (B) that has passed through each of the color filters 73R, 73G, and 73B is transmitted by the liquid crystal layer 40 to the pixels P (R) and P (G ) And P (B), the light is modulated and then emitted to the element substrate 20 side. Thereby, a full-color image is formed. The color filter 73 may include color filters corresponding to other colors such as white, in addition to the three color filters of red (R), green (G), and blue (B).

  An outline of a method for manufacturing the color filter substrate 70 will be described. Although not shown, first, a resin layer to be the partition wall 72 is formed on the entire surface 71a of the substrate 71, and an opening 72a is formed in the resin layer. Subsequently, a color filter material is dropped and filled inside the opening 72a of the partition wall 72 by a droplet discharge method such as an inkjet method. As the color filter material, a liquid material in which a resin material is dissolved or dispersed in a predetermined solvent is mixed with coloring materials such as red (R), green (G), and blue (B) dyes and pigments. be able to.

  The color filter substrate 70 is obtained by drying and solidifying the color filter material dropped inside the opening 72a of the partition wall 72 by heat treatment or ultraviolet irradiation. Then, as in the second embodiment, the counter substrate 30B is obtained by forming the planarization layer 33, the light shielding layer 32, the common electrode 34, and the alignment film 35 on the color filter substrate 70. . Note that, instead of the planarization layer 33, a structure having a light-transmitting substrate may be used.

  As described above, according to the third embodiment, the common electrode 34 is electrically connected to the light shielding layer 32 made of a metal material, and the thickness T of the common electrode 34 is 22 nm or less. Since the distance (step) between the surface 33a of the planarization layer 33 and the surface 32b of the light shielding layer 32, which is the lower layer of the common electrode 34, is equal to or less than the thickness T of the common electrode 34, the same effect as in the above embodiment is obtained. can get.

  In addition, color filters 73R, 73G, and 73B are provided on the color filter substrate 70 of the counter substrate 30B corresponding to each of the pixels P (R), P (G), and P (B). Therefore, colored light in the red (R), green (G), and blue (B) wavelength regions can be transmitted in the regions of the pixels P (R), P (G), and P (B). As a result, it is possible to provide a liquid crystal device 1B that is capable of full-color display and is brighter and has higher display quality.

(Fourth embodiment)
<Electronic equipment>
Next, an electronic apparatus according to a fourth embodiment will be described with reference to FIG. FIG. 13 is a schematic diagram illustrating a configuration of a projector as an electronic apparatus according to the fourth embodiment.

  As shown in FIG. 13, a projector (projection display device) 100 as an electronic apparatus according to the fourth embodiment includes a polarization illumination device 110, two dichroic mirrors 104 and 105 as light separation elements, and three Reflective mirrors 106, 107, 108, five relay lenses 111, 112, 113, 114, 115, three liquid crystal light valves 121, 122, 123, a cross dichroic prism 116 as a light combining element, and a projection lens 117 It has.

  The polarization illumination device 110 includes a lamp unit 101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 102, and a polarization conversion element 103. The lamp unit 101, the integrator lens 102, and the polarization conversion element 103 are arranged along the system optical axis L.

  The dichroic mirror 104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 110. Another dichroic mirror 105 reflects the green light (G) transmitted through the dichroic mirror 104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 104 is reflected by the reflection mirror 106 and then enters the liquid crystal light valve 121 via the relay lens 115. The green light (G) reflected by the dichroic mirror 105 enters the liquid crystal light valve 122 via the relay lens 114. The blue light (B) transmitted through the dichroic mirror 105 is incident on the liquid crystal light valve 123 via a light guide system composed of three relay lenses 111, 112, 113 and two reflection mirrors 107, 108.

  The transmissive liquid crystal light valves 121, 122, and 123 as light modulation elements are disposed to face the incident surfaces of the cross dichroic prism 116 for each color light. The color light incident on the liquid crystal light valves 121, 122, 123 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 116.

  The cross dichroic prism 116 is formed by bonding four right-angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. Yes. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected onto the screen 130 by the projection lens 117 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 121 is applied with the liquid crystal device 1 having the counter substrate 30 of the first embodiment or the liquid crystal device 1A having the counter substrate 30A of the second embodiment. The liquid crystal light valve 121 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and emission side of colored light. The same applies to the other liquid crystal light valves 122 and 123.

  According to the configuration of the projector 100 according to the fourth embodiment, even if the plurality of pixels P are arranged with high definition, the liquid crystal device 1 of the first embodiment or the liquid crystal device 1A of the second embodiment is used. Since the projector 100 is provided, the projector 100 excellent in display brightness and display quality can be provided.

  The projector 100 may have a configuration including two or less liquid crystal light valves (liquid crystal devices 1 and 1A) or a configuration including four or more liquid crystal light valves (liquid crystal devices 1 and 1A). There may be.

  Further, the electronic apparatus to which the liquid crystal devices 1 and 1A can be applied is not limited to the projector 100. The liquid crystal devices 1 and 1A can be suitably used for, for example, a projection type HUD (head-up display), a direct-view type HMD (head-mounted display), and the like.

(Fifth embodiment)
<Electronic equipment>
Next, an electronic apparatus according to a fifth embodiment will be described with reference to FIG. FIG. 14 is a schematic diagram illustrating a configuration of a smartphone as an electronic apparatus according to the fifth embodiment.

  As shown in FIG. 14, a smartphone 200 as an electronic apparatus (direct-view display device) according to the fifth embodiment is a mobile terminal device that has both a mobile phone function and a PDA (Personal Digital Assistant) function. . In addition to a communication function such as a normal voice call, it also has a network function and a function as an electronic notebook such as schedule / personal information management.

  The smartphone 200 includes the liquid crystal device 1 </ b> B having the counter substrate 30 </ b> B of the third embodiment described above in the operation unit / display unit 201. For example, an icon 202 is displayed on the operation unit / display unit 201. In the smartphone 200, various functions can be operated by an operation such as touching the icon 202 to display on the operation unit / display unit 201.

  According to the configuration of the smartphone 200 according to the fifth embodiment, even if the plurality of pixels P (P (R), P (G), P (B)) are arranged with high definition, the third embodiment Since the liquid crystal device 1B is provided, the smartphone 200 that is excellent in display brightness and display quality can be provided.

  The electronic device to which the liquid crystal device 1B can be applied is not limited to the smartphone 200. The liquid crystal device 1B can be suitably used for a direct-view display device such as a display, a mobile phone, a PDA (Personal Digital Assistants), a mobile computer, a digital still camera, a digital video camera, a car navigation device, and an audio device. it can.

  DESCRIPTION OF SYMBOLS 1,1A, 1B ... Liquid crystal device (electro-optical device), 10 ... Microlens array substrate (first member), 11 ... Substrate, 11a ... Surface, 14 ... Microlens, 20 ... Element substrate (first substrate), 24 ... TFT (switching element), 28 ... Pixel electrode, 30, 30A, 30B ... Opposite substrate (substrate for electro-optical device, second substrate), 31 ... Optical path length adjusting layer (second member), 31a ... Surface, 31b ... Groove, 32 ... light shielding layer, 32a ... opening, 32b ... surface, 33 ... flattening layer (second member), 33a ... surface, 33b ... groove, 34 ... common electrode, 40 ... liquid crystal layer (electro-optic material layer) , 60 ... prism substrate (first member), 65 ... prism (reflecting part), 70 ... color filter substrate (first member), 73, 73R, 73G, 73B ... color filter, 100 ... projector (electronic device), 200 Smart phone (electronic device).

Claims (7)

A first member;
A second member disposed on the first member;
A light shielding layer provided on the surface side of the second member and having a plurality of openings corresponding to each of the plurality of pixels;
A common electrode provided to cover the second member and the light shielding layer and to be in contact with the light shielding layer;
The light shielding layer is made of a metal material,
The common electrode has a thickness of 22 nm or less;
The electro-optical device substrate according to claim 1, wherein a distance between the surface of the second member and the surface of the light shielding layer is equal to or less than a thickness of the common electrode. The electro-optical device substrate according to claim 1,
A groove is provided on the surface of the second member between adjacent openings of the plurality of openings,
The substrate for an electro-optical device, wherein the light shielding layer is provided inside the groove. The substrate for an electro-optical device according to claim 1 or 2,
The electro-optical device substrate, wherein the first member is provided with a microlens corresponding to each of the plurality of openings. The substrate for an electro-optical device according to claim 1 or 2,
The electro-optical device substrate according to claim 1, wherein the first member is provided with a reflection portion between adjacent openings of the plurality of openings. The substrate for an electro-optical device according to claim 1 or 2,
The electro-optical device substrate according to claim 1, wherein the first member is provided with a color filter corresponding to each of the plurality of openings. A first substrate provided with a plurality of pixel electrodes and a switching element corresponding to each of the plurality of pixel electrodes;
A second substrate disposed opposite the first substrate;
An electro-optic material layer disposed between the first substrate and the second substrate,
6. The electro-optical device, wherein the second substrate is the substrate for an electro-optical device according to any one of claims 1 to 5.   An electronic apparatus comprising the electro-optical device according to claim 6.

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