JP2014144904A - ナイオベート誘電体組成物及びこれを使用するナノシート薄膜 - Google Patents
ナイオベート誘電体組成物及びこれを使用するナノシート薄膜 Download PDFInfo
- Publication number
- JP2014144904A JP2014144904A JP2013081293A JP2013081293A JP2014144904A JP 2014144904 A JP2014144904 A JP 2014144904A JP 2013081293 A JP2013081293 A JP 2013081293A JP 2013081293 A JP2013081293 A JP 2013081293A JP 2014144904 A JP2014144904 A JP 2014144904A
- Authority
- JP
- Japan
- Prior art keywords
- chemical formula
- dielectric
- dielectric composition
- composition represented
- niobate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 95
- 239000002135 nanosheet Substances 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 75
- 239000010955 niobium Substances 0.000 claims description 48
- 239000000243 solution Substances 0.000 claims description 18
- 239000011575 calcium Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910001414 potassium ion Inorganic materials 0.000 claims description 12
- 229940043430 calcium compound Drugs 0.000 claims description 9
- 150000001674 calcium compounds Chemical class 0.000 claims description 9
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 9
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 9
- 150000003112 potassium compounds Chemical class 0.000 claims description 9
- 150000003438 strontium compounds Chemical class 0.000 claims description 9
- 239000003929 acidic solution Substances 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 238000001354 calcination Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- 239000003985 ceramic capacitor Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- -1 BaTiO 3 (BTO Chemical class 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000013032 photocatalytic reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0009749 | 2013-01-29 | ||
| KR1020130009749A KR101398553B1 (ko) | 2013-01-29 | 2013-01-29 | 나이오베이트 유전체 조성물 및 이를 사용하는 나노시트 박막 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2014144904A true JP2014144904A (ja) | 2014-08-14 |
Family
ID=50895043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013081293A Pending JP2014144904A (ja) | 2013-01-29 | 2013-04-09 | ナイオベート誘電体組成物及びこれを使用するナノシート薄膜 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2014144904A (ko) |
| KR (1) | KR101398553B1 (ko) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017088480A (ja) * | 2015-10-19 | 2017-05-25 | コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー | 銀置換ニオブ酸ストロンチウム誘電体組成物及びその製造方法 |
| US20180286586A1 (en) * | 2017-03-31 | 2018-10-04 | Samsung Electronics Co., Ltd. | Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same |
| JP2019083316A (ja) * | 2017-10-27 | 2019-05-30 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | セラミック電子部品およびその製造方法、ならびに電子装置 |
| CN110828189A (zh) * | 2018-08-08 | 2020-02-21 | 丰田自动车株式会社 | 锂离子电容器用正极和使用该正极的锂离子电容器、以及它们的制造方法 |
| US11358904B2 (en) | 2017-03-10 | 2022-06-14 | Samsung Electronics Co., Ltd. | Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same |
| JP2022088333A (ja) * | 2020-12-02 | 2022-06-14 | コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー | ニオベート誘電体を含むナノシートおよびこれを含む誘電体薄膜 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101572614B1 (ko) | 2014-08-05 | 2015-11-30 | 한국과학기술연구원 | 나이오베이트 유전체 조성물 및 이를 사용하는 나노시트 박막 |
| KR102274761B1 (ko) * | 2015-10-19 | 2021-07-08 | 한국과학기술연구원 | 은이 치환된 스트론튬 나이오베이트 유전체 조성물 및 그 제조방법 |
| KR102363288B1 (ko) | 2017-03-10 | 2022-02-14 | 삼성전자주식회사 | 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자 |
| KR102469185B1 (ko) | 2017-10-27 | 2022-11-18 | 삼성전자주식회사 | 세라믹 전자 부품 및 그 제조 방법과 전자장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008078652A1 (ja) * | 2006-12-25 | 2008-07-03 | National Institute For Materials Science | 誘電体素子とその製造方法 |
| WO2012050007A1 (ja) * | 2010-10-13 | 2012-04-19 | 独立行政法人物質・材料研究機構 | 超格子構造を有する強誘電体薄膜とその製造方法、並びに強誘電体素子とその製造方法 |
-
2013
- 2013-01-29 KR KR1020130009749A patent/KR101398553B1/ko active IP Right Grant
- 2013-04-09 JP JP2013081293A patent/JP2014144904A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008078652A1 (ja) * | 2006-12-25 | 2008-07-03 | National Institute For Materials Science | 誘電体素子とその製造方法 |
| WO2012050007A1 (ja) * | 2010-10-13 | 2012-04-19 | 独立行政法人物質・材料研究機構 | 超格子構造を有する強誘電体薄膜とその製造方法、並びに強誘電体素子とその製造方法 |
Non-Patent Citations (2)
| Title |
|---|
| JPN6014041980; Ｏｓａｄａ， Ｍ: 'Ｎｅｗ ｄｉｅｌｅｃｔｒｉｃ ｎａｎｏｍａｔｅｒｉａｌｓ ｆａｂｒｉｃａｔｅｄ ｆｒｏｍ ｎａｎｏｓｈｅｅｔ ｔｅｃｈｎｉｑｕｅ' ＥＣＳ Ｔｒａｎｓａｃｔｉｏｎｓ ４５（３， Ｄｉｅｌｅｃｔｒｉｃｓ ｆｏｒ Ｎａｎｏｓｙｓｔｅｍｓ ５）, 2012, Ｐ．３-８ * |
| JPN6014041981; 長田実: '次代を拓く 工業材料キーワード４０ 高誘電体ナノシート' 工業材料 Ｖｏｌ．６０ Ｎｏ．１, 20120101, Ｐ．７２-７３ * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017088480A (ja) * | 2015-10-19 | 2017-05-25 | コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー | 銀置換ニオブ酸ストロンチウム誘電体組成物及びその製造方法 |
| US11358904B2 (en) | 2017-03-10 | 2022-06-14 | Samsung Electronics Co., Ltd. | Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same |
| CN108695073A (zh) * | 2017-03-31 | 2018-10-23 | 三星电子株式会社 | 二维钙钛矿材料、包括其的介电材料和多层电容器 |
| KR20180111354A (ko) * | 2017-03-31 | 2018-10-11 | 삼성전자주식회사 | 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터 |
| KR102325821B1 (ko) * | 2017-03-31 | 2021-11-11 | 삼성전자주식회사 | 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터 |
| CN108695073B (zh) * | 2017-03-31 | 2022-01-25 | 三星电子株式会社 | 二维钙钛矿材料、包括其的介电材料和多层电容器 |
| US20180286586A1 (en) * | 2017-03-31 | 2018-10-04 | Samsung Electronics Co., Ltd. | Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same |
| US11823838B2 (en) | 2017-03-31 | 2023-11-21 | Samsung Electronics Co., Ltd. | Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same |
| JP2019083316A (ja) * | 2017-10-27 | 2019-05-30 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | セラミック電子部品およびその製造方法、ならびに電子装置 |
| JP7298820B2 (ja) | 2017-10-27 | 2023-06-27 | 三星電子株式会社 | セラミック電子部品およびその製造方法、ならびに電子装置 |
| CN110828189A (zh) * | 2018-08-08 | 2020-02-21 | 丰田自动车株式会社 | 锂离子电容器用正极和使用该正极的锂离子电容器、以及它们的制造方法 |
| CN110828189B (zh) * | 2018-08-08 | 2021-06-15 | 丰田自动车株式会社 | 锂离子电容器用正极、锂离子电容器以及它们的制造方法 |
| JP2022088333A (ja) * | 2020-12-02 | 2022-06-14 | コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー | ニオベート誘電体を含むナノシートおよびこれを含む誘電体薄膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101398553B1 (ko) | 2014-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101398553B1 (ko) | 나이오베이트 유전체 조성물 및 이를 사용하는 나노시트 박막 | |
| Zhang et al. | Enhanced dielectric tunability of Ba0. 6Sr0. 4TiO3/Poly (vinylidene fluoride) composites via interface modification by silane coupling agent | |
| JP4310318B2 (ja) | 誘電体用セラミック粉末の製造方法、並びにそのセラミック粉末を用いて製造された積層セラミックキャパシター | |
| Wei et al. | Relaxor behavior of BaTiO3-BiYO3 perovskite materials for high energy density capacitors | |
| Yuan et al. | High-temperature stable dielectrics in Mn-modified (1-x) Bi 0.5 Na 0.5 TiO 3-xCaTiO 3 ceramics | |
| Cortés et al. | Dielectric and non-ohmic analysis of Sr2+ influences on CaCu3Ti4O12-based ceramic composites | |
| Chen et al. | Dielectric properties and impedance analysis of BaTiO3-based ceramics with core-shell structure | |
| Liu et al. | B-site modification of (Ba0. 6Sr0. 4) TiO3 ceramics with enhanced diffuse phase transition behavior | |
| Rao et al. | New pyrochlore-type oxides in Ca–R–Ti–Nb–O system (R= Y, Sm or Gd)—structure, FT-IR spectra and dielectric properties | |
| Muhammad et al. | Structure and dielectric characteristics of Ba1-xCaxTi1-xCaxO3-δ ceramics | |
| Arya et al. | Structural, dielectric and electrical properties of BaSnO3 and BaSeO3 modified Bi0. 5Na0. 5TiO3 ceramics | |
| Shalu et al. | Effect of Mn-doping on the morphological and electrical properties of (Ba0· 7Sr0. 3)(MnxTi1− x) O3 materials for energy storage application | |
| Chou et al. | Microstructures and dielectric properties of Ba0. 5Sr0. 5TiO3–Zn2TiO4 composite ceramics with low sintering temperature for tunable device applications | |
| Behera et al. | Studies of structural, dielectric and electrical characteristics of nickel-modified barium titanate for device applications | |
| Chen et al. | Enhancement of relaxor properties by Nb doping in Ba0. 8Sr0. 12Ca0. 08TiO3 lead-free ferroelectric ceramics | |
| JP2012517955A (ja) | 誘電体製造用焼結前駆体粉末およびその製造方法 | |
| JP6368751B2 (ja) | 銀置換ニオブ酸ストロンチウム誘電体組成物及びその製造方法 | |
| JP5855159B2 (ja) | 高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物 | |
| Dewi et al. | The effect of heating rate on BaZrxTi1-xO3 thin film for x= 0.4 and x= 0.6 as capacitors | |
| US20120250216A1 (en) | Semiconductor ceramic and a multilayer semiconductor ceramic capacitor | |
| Ha et al. | Improvement of dielectric loss of (Ba, Sr)(Ti, Zr) O3 ferroelectrics for tunable devices | |
| Wu et al. | Dielectric tunable properties of BaTi1-xSnxO3 thin films derived from sol-gel soft chemistry | |
| Zhao et al. | Enhanced energy storage efficiency of Ba0. 8Sr0. 2TiO3 ceramics modified by BiTaO3 | |
| KR102274761B1 (ko) | 은이 치환된 스트론튬 나이오베이트 유전체 조성물 및 그 제조방법 | |
| Lv et al. | Microstructure and dielectric properties of Na and Ni co-substituted CaCu3Ti4O12 ceramics with high dielectric constant and low loss |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141007 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141225 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150512 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150914 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150928 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20151113 |