JP2014132717A - 静電気放電保護回路及び半導体回路装置 - Google Patents
静電気放電保護回路及び半導体回路装置 Download PDFInfo
- Publication number
- JP2014132717A JP2014132717A JP2013000359A JP2013000359A JP2014132717A JP 2014132717 A JP2014132717 A JP 2014132717A JP 2013000359 A JP2013000359 A JP 2013000359A JP 2013000359 A JP2013000359 A JP 2013000359A JP 2014132717 A JP2014132717 A JP 2014132717A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic discharge
- circuit
- line
- transistor
- protection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 47
- 230000005669 field effect Effects 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Electronic Switches (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013000359A JP2014132717A (ja) | 2013-01-07 | 2013-01-07 | 静電気放電保護回路及び半導体回路装置 |
| US14/134,239 US9124088B2 (en) | 2013-01-07 | 2013-12-19 | Electrostatic discharge protection circuit and semiconductor circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013000359A JP2014132717A (ja) | 2013-01-07 | 2013-01-07 | 静電気放電保護回路及び半導体回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014132717A true JP2014132717A (ja) | 2014-07-17 |
| JP2014132717A5 JP2014132717A5 (enExample) | 2016-01-21 |
Family
ID=51060770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013000359A Pending JP2014132717A (ja) | 2013-01-07 | 2013-01-07 | 静電気放電保護回路及び半導体回路装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9124088B2 (enExample) |
| JP (1) | JP2014132717A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9520716B2 (en) | 2013-12-09 | 2016-12-13 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US9716382B2 (en) | 2013-12-09 | 2017-07-25 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US9935096B2 (en) | 2015-12-16 | 2018-04-03 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
| US9991698B2 (en) | 2014-11-25 | 2018-06-05 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US10348085B2 (en) | 2015-09-01 | 2019-07-09 | Seiko Epson Corporation | Static electricity protection circuit, semiconductor integrated circuit device, and electronic apparatus |
| US10389111B2 (en) | 2016-02-23 | 2019-08-20 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
| US10396551B2 (en) | 2016-02-23 | 2019-08-27 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9269705B2 (en) * | 2012-05-04 | 2016-02-23 | Polar Semiconductor, Llc | Anti-snapback circuitry for metal oxide semiconductor (MOS) transistor |
| JP2015204126A (ja) | 2014-04-16 | 2015-11-16 | 株式会社東芝 | 半導体記憶装置 |
| FR3038131B1 (fr) * | 2015-06-26 | 2018-03-23 | Stmicroelectronics Sa | Dispositif de protection ameliore contre les decharges electrostatiques. |
| CN107465180B (zh) * | 2017-09-21 | 2019-03-26 | 珠海亿智电子科技有限公司 | 一种具有交流检测和直流检测的钳位电路 |
| US11095286B2 (en) * | 2019-06-12 | 2021-08-17 | Skyworks Solutions, Inc. | Electrostatic discharge clamp topology |
| CN113394762A (zh) * | 2020-03-12 | 2021-09-14 | 长鑫存储技术有限公司 | 静电保护电路、集成电路及静电泄放方法 |
| CN114172137B (zh) * | 2020-11-03 | 2024-06-28 | 台湾积体电路制造股份有限公司 | 用于静电放电保护的电路和方法 |
| US12132308B2 (en) * | 2022-04-11 | 2024-10-29 | Changxin Memory Technologies, Inc. | Electrostatic protection circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040109270A1 (en) * | 2002-12-10 | 2004-06-10 | Michael Stockinger | Transient detection circuit |
| US20050073009A1 (en) * | 2003-10-06 | 2005-04-07 | Kenji Kojima | Semiconductor device |
| US20060209478A1 (en) * | 2005-03-17 | 2006-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device |
| US20100296212A1 (en) * | 2009-05-20 | 2010-11-25 | Industrial Technology Research Institute | Electrostatic discharge clamp circuit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5781388A (en) | 1996-09-03 | 1998-07-14 | Motorola, Inc. | Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor |
| JP4450631B2 (ja) | 2004-01-06 | 2010-04-14 | 旭化成エレクトロニクス株式会社 | Esd保護機能付き信号出力回路 |
| US7085113B2 (en) | 2004-08-20 | 2006-08-01 | International Business Machines Corporation | ESD protection power clamp for suppressing ESD events occurring on power supply terminals |
| JP2009021332A (ja) | 2007-07-11 | 2009-01-29 | Kawasaki Microelectronics Kk | 静電気放電保護回路 |
| JP5165356B2 (ja) | 2007-12-13 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| JP5214263B2 (ja) | 2008-01-30 | 2013-06-19 | 川崎マイクロエレクトロニクス株式会社 | 静電気放電保護回路 |
-
2013
- 2013-01-07 JP JP2013000359A patent/JP2014132717A/ja active Pending
- 2013-12-19 US US14/134,239 patent/US9124088B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040109270A1 (en) * | 2002-12-10 | 2004-06-10 | Michael Stockinger | Transient detection circuit |
| US20050073009A1 (en) * | 2003-10-06 | 2005-04-07 | Kenji Kojima | Semiconductor device |
| JP2005116695A (ja) * | 2003-10-06 | 2005-04-28 | Toshiba Corp | 半導体装置 |
| US20060209478A1 (en) * | 2005-03-17 | 2006-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device |
| US20100296212A1 (en) * | 2009-05-20 | 2010-11-25 | Industrial Technology Research Institute | Electrostatic discharge clamp circuit |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9520716B2 (en) | 2013-12-09 | 2016-12-13 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US9716382B2 (en) | 2013-12-09 | 2017-07-25 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US9991698B2 (en) | 2014-11-25 | 2018-06-05 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit apparatus |
| US10348085B2 (en) | 2015-09-01 | 2019-07-09 | Seiko Epson Corporation | Static electricity protection circuit, semiconductor integrated circuit device, and electronic apparatus |
| US9935096B2 (en) | 2015-12-16 | 2018-04-03 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
| US10389111B2 (en) | 2016-02-23 | 2019-08-20 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
| US10396551B2 (en) | 2016-02-23 | 2019-08-27 | Seiko Epson Corporation | Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140192445A1 (en) | 2014-07-10 |
| US9124088B2 (en) | 2015-09-01 |
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