JP2014130883A - 基板洗浄装置及び基板洗浄方法 - Google Patents

基板洗浄装置及び基板洗浄方法 Download PDF

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Publication number
JP2014130883A
JP2014130883A JP2012287121A JP2012287121A JP2014130883A JP 2014130883 A JP2014130883 A JP 2014130883A JP 2012287121 A JP2012287121 A JP 2012287121A JP 2012287121 A JP2012287121 A JP 2012287121A JP 2014130883 A JP2014130883 A JP 2014130883A
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JP
Japan
Prior art keywords
substrate
cleaning
fluid nozzle
holding mechanism
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012287121A
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English (en)
Japanese (ja)
Other versions
JP2014130883A5 (enExample
Inventor
Tomoatsu Ishibashi
知淳 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2012287121A priority Critical patent/JP2014130883A/ja
Priority to KR1020130159803A priority patent/KR20140086846A/ko
Priority to US14/139,626 priority patent/US20140182632A1/en
Priority to TW102147709A priority patent/TWI610359B/zh
Publication of JP2014130883A publication Critical patent/JP2014130883A/ja
Publication of JP2014130883A5 publication Critical patent/JP2014130883A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2012287121A 2012-12-28 2012-12-28 基板洗浄装置及び基板洗浄方法 Pending JP2014130883A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012287121A JP2014130883A (ja) 2012-12-28 2012-12-28 基板洗浄装置及び基板洗浄方法
KR1020130159803A KR20140086846A (ko) 2012-12-28 2013-12-20 기판 세정 장치 및 기판 세정 방법
US14/139,626 US20140182632A1 (en) 2012-12-28 2013-12-23 Substrate cleaning apparatus and substrate cleaning method
TW102147709A TWI610359B (zh) 2012-12-28 2013-12-23 基板洗淨裝置及基板洗淨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012287121A JP2014130883A (ja) 2012-12-28 2012-12-28 基板洗浄装置及び基板洗浄方法

Publications (2)

Publication Number Publication Date
JP2014130883A true JP2014130883A (ja) 2014-07-10
JP2014130883A5 JP2014130883A5 (enExample) 2015-08-27

Family

ID=51015749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012287121A Pending JP2014130883A (ja) 2012-12-28 2012-12-28 基板洗浄装置及び基板洗浄方法

Country Status (4)

Country Link
US (1) US20140182632A1 (enExample)
JP (1) JP2014130883A (enExample)
KR (1) KR20140086846A (enExample)
TW (1) TWI610359B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018501665A (ja) * 2015-07-13 2018-01-18 ゼウス カンパニー リミテッド 基板液処理装置及び方法
JP2021015998A (ja) * 2018-12-04 2021-02-12 株式会社ディスコ ウエーハ洗浄装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359107B (zh) * 2014-11-18 2020-07-14 通富微电子股份有限公司 一种圆片清洗机用的喷头及圆片清洗机
CN105826224B (zh) * 2016-05-11 2019-05-21 中国电子科技集团公司第四十五研究所 一种用于半导体晶圆的清洁腔

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001506061A (ja) * 1997-09-24 2001-05-08 アンテルユニヴェルシテール・ミクロ―エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 表面から液体を除去する方法及び装置
JP2003517201A (ja) * 1999-12-17 2003-05-20 ナトゥール・インコーポレイテッド 処理チャンバ、収納チャンバ、処理装置、並びに、処理方法。
JP2005353739A (ja) * 2004-06-09 2005-12-22 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JP2012204759A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 基板保持装置、基板洗浄装置および基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5778554A (en) * 1996-07-15 1998-07-14 Oliver Design, Inc. Wafer spin dryer and method of drying a wafer
KR100523635B1 (ko) * 2003-02-04 2005-10-25 동부아남반도체 주식회사 웨이퍼 표면의 슬러리 제거 장치 및 그 방법
WO2005104200A1 (ja) * 2004-04-23 2005-11-03 Tokyo Electron Limited 基板洗浄方法、基板洗浄装置、コンピュータプログラムおよびプログラム記憶媒体
KR100940136B1 (ko) * 2006-08-29 2010-02-03 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001506061A (ja) * 1997-09-24 2001-05-08 アンテルユニヴェルシテール・ミクロ―エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 表面から液体を除去する方法及び装置
JP2003517201A (ja) * 1999-12-17 2003-05-20 ナトゥール・インコーポレイテッド 処理チャンバ、収納チャンバ、処理装置、並びに、処理方法。
JP2005353739A (ja) * 2004-06-09 2005-12-22 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JP2012204759A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 基板保持装置、基板洗浄装置および基板処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018501665A (ja) * 2015-07-13 2018-01-18 ゼウス カンパニー リミテッド 基板液処理装置及び方法
JP2021015998A (ja) * 2018-12-04 2021-02-12 株式会社ディスコ ウエーハ洗浄装置
JP7092847B2 (ja) 2018-12-04 2022-06-28 株式会社ディスコ ウエーハ洗浄装置

Also Published As

Publication number Publication date
TW201428842A (zh) 2014-07-16
KR20140086846A (ko) 2014-07-08
TWI610359B (zh) 2018-01-01
US20140182632A1 (en) 2014-07-03

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