JP2014120556A5 - - Google Patents

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Publication number
JP2014120556A5
JP2014120556A5 JP2012273422A JP2012273422A JP2014120556A5 JP 2014120556 A5 JP2014120556 A5 JP 2014120556A5 JP 2012273422 A JP2012273422 A JP 2012273422A JP 2012273422 A JP2012273422 A JP 2012273422A JP 2014120556 A5 JP2014120556 A5 JP 2014120556A5
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JP
Japan
Prior art keywords
face
rear end
laser diode
current
semiconductor laser
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Application number
JP2012273422A
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English (en)
Japanese (ja)
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JP2014120556A (ja
JP6070147B2 (ja
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Priority to JP2012273422A priority Critical patent/JP6070147B2/ja
Priority claimed from JP2012273422A external-priority patent/JP6070147B2/ja
Publication of JP2014120556A publication Critical patent/JP2014120556A/ja
Publication of JP2014120556A5 publication Critical patent/JP2014120556A5/ja
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Publication of JP6070147B2 publication Critical patent/JP6070147B2/ja
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JP2012273422A 2012-12-14 2012-12-14 半導体レーザダイオード Active JP6070147B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012273422A JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012273422A JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

Publications (3)

Publication Number Publication Date
JP2014120556A JP2014120556A (ja) 2014-06-30
JP2014120556A5 true JP2014120556A5 (https=) 2016-01-07
JP6070147B2 JP6070147B2 (ja) 2017-02-01

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ID=51175163

Family Applications (1)

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JP2012273422A Active JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

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JP (1) JP6070147B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417274B (zh) * 2016-06-30 2021-12-07 新唐科技日本株式会社 半导体激光装置、半导体激光模块及熔接用激光光源系统
CN116235373B (zh) * 2020-11-12 2025-03-21 三菱电机株式会社 激光二极管条的端面成膜方法
CN113948969A (zh) * 2021-09-03 2022-01-18 中国工程物理研究院应用电子学研究所 一种高效率半导体激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810778B2 (ja) * 1986-10-14 1996-01-31 ソニー株式会社 半導体レ−ザ
JPH05190972A (ja) * 1992-01-13 1993-07-30 Eastman Kodak Japan Kk レーザダイオード
JPH09199782A (ja) * 1996-01-16 1997-07-31 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
JP2003264340A (ja) * 2002-03-11 2003-09-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム
JP4336127B2 (ja) * 2002-03-15 2009-09-30 古河電気工業株式会社 光ファイバ増幅器
JP2006294984A (ja) * 2005-04-13 2006-10-26 Matsushita Electric Ind Co Ltd 半導体レーザ素子とその製造方法およびそれを用いた光ピックアップ装置
JP2010129812A (ja) * 2008-11-28 2010-06-10 Denso Corp 半導体レーザ

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