JP2014114183A - Method for working laminated sheet, and worked laminated sheet - Google Patents

Method for working laminated sheet, and worked laminated sheet Download PDF

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JP2014114183A
JP2014114183A JP2012269500A JP2012269500A JP2014114183A JP 2014114183 A JP2014114183 A JP 2014114183A JP 2012269500 A JP2012269500 A JP 2012269500A JP 2012269500 A JP2012269500 A JP 2012269500A JP 2014114183 A JP2014114183 A JP 2014114183A
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substrate
plate
glass
laminated
glass substrate
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JP6003604B2 (en
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Akira Azuma
明 我妻
Yutaka Otsubo
豊 大坪
Yuki Tateyama
優貴 立山
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AGC Inc
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Asahi Glass Co Ltd
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Priority to JP2012269500A priority Critical patent/JP6003604B2/en
Priority to KR1020130152304A priority patent/KR102133780B1/en
Priority to TW102145439A priority patent/TWI584957B/en
Priority to CN201310665391.4A priority patent/CN103864294B/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/10Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/10Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
    • B24B9/105Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass using a template
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

PROBLEM TO BE SOLVED: To provide a method for working a laminated sheet capable of suppressing chipping upon grinding and cracking upon peeling.SOLUTION: Provided is a method for working a laminated sheet 10 having a substrate 12 and a reinforcing sheet 14 coupled with the substrate 12 so as to be peelable. The method for working a laminated sheet comprises a chamfer step of grinding the edge part of the laminated sheet 10 with a grinder 30. The angle θ made by the boundary between the substrate 12 and the reinforcing sheet 14 and the ground face obtained by being ground with the grinder 30 in the substrate 12 is wider than 26° and less than 30°.

Description

本発明は、積層板の加工方法、加工された積層板に関する。   The present invention relates to a method for processing a laminated plate and a processed laminated plate.

液晶パネル(LCD)やプラズマパネル(PDP)、有機ELパネル(OLED)などの表示パネル、太陽電池、薄膜2次電池などの電子デバイスは、薄型化、軽量化が要望されており、これらの電子デバイスに用いられる基板の薄板化が進行している。薄板化によって基板の剛性が低くなると、基板のハンドリング性が悪くなる。加えて、薄板化により基板の厚さが変わると、既存の設備を用いた電子デバイスの製造が困難になる。   Electronic devices such as liquid crystal panels (LCD), plasma panels (PDP), organic EL panels (OLED) and other display panels, solar cells, and thin film secondary batteries are required to be thinner and lighter. Thinning of substrates used in devices is progressing. If the rigidity of the substrate is reduced by thinning, the handling property of the substrate is deteriorated. In addition, if the thickness of the substrate changes due to the thin plate, it becomes difficult to manufacture an electronic device using existing equipment.

そこで、補強板と剥離可能に結合した基板上に所定の機能膜(例えば、導電層)を形成した後、基板と補強板とを剥離する方法が提案されている(例えば、特許文献1参照)。該方法によれば、基板のハンドリング性を確保でき、且つ、既存の設備を用いた薄型の電子デバイスの製造ができる。   Accordingly, a method has been proposed in which a predetermined functional film (for example, a conductive layer) is formed on a substrate that is detachably coupled to the reinforcing plate, and then the substrate and the reinforcing plate are separated (for example, see Patent Document 1). . According to this method, the handling property of the substrate can be ensured, and a thin electronic device using existing equipment can be manufactured.

特開2007−326358号公報JP 2007-326358 A

基板、および該基板と剥離可能に結合した補強板を有する積層板の端部は、耐衝撃性の向上を目的として、砥石で研削され、面取りされることがある。   An end portion of a laminate having a substrate and a reinforcing plate releasably coupled to the substrate may be ground and chamfered with a grindstone for the purpose of improving impact resistance.

基板の砥石で研削した研削面にはマイクロクラックが生じることがあり、生じたマイクロクラックが基板と補強板との界面に達し、基板が欠けることがあった。   A microcrack may occur on the ground surface of the substrate ground with the grindstone, and the generated microcrack may reach the interface between the substrate and the reinforcing plate, and the substrate may be chipped.

また、基板と、補強板との剥離操作によって基板が割れることがあった。   Further, the substrate may be broken by the peeling operation between the substrate and the reinforcing plate.

本発明は、上記課題に鑑みてなされたものであって、研削時の欠け、および剥離時の割れを抑制できる積層板の加工方法の提供を目的とする。   This invention is made | formed in view of the said subject, Comprising: It aims at provision of the processing method of the laminated board which can suppress the chipping at the time of grinding, and the crack at the time of peeling.

上記課題を解決するため、本発明の一態様によれば、
基板、および該基板と剥離可能に結合した補強板を有する積層板の加工方法であって、
前記積層板の端部を砥石で研削する面取り工程を有し、
前記基板と前記補強板との界面と、前記基板の前記砥石で研削した研削面とのなす角が26°よりも大きく、30°以下である、積層板の加工方法が提供される。
In order to solve the above problems, according to one aspect of the present invention,
A method of processing a laminated plate having a substrate and a reinforcing plate releasably coupled to the substrate,
Having a chamfering step of grinding the end of the laminate with a grindstone;
There is provided a method for processing a laminated board, wherein an angle formed between an interface between the substrate and the reinforcing plate and a ground surface of the substrate ground by the grindstone is larger than 26 ° and not larger than 30 °.

本発明によれば、研削時の欠け、および剥離時の割れを抑制できる積層板の加工方法が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the processing method of the laminated board which can suppress the chipping at the time of grinding and the crack at the time of peeling is provided.

本発明の一実施例による積層板の加工方法を示す側面図である。It is a side view which shows the processing method of the laminated sheet by one Example of this invention. 本発明の一実施例による積層板の加工方法を示す平面図である。It is a top view which shows the processing method of the laminated board by one Example of this invention. 本発明の一実施例による面取り工程で砥石から積層板に作用する力を示す断面図である。It is sectional drawing which shows the force which acts on a laminated board from a grindstone in the chamfering process by one Example of this invention.

以下、本発明を実施するための形態について図面を参照して説明する。各図面において、同一の又は対応する構成には、同一の又は対応する符号を付して、説明を省略する。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof is omitted.

図1は、本発明の一実施例による積層板の加工方法を示す側面図である。図2は、本発明の一実施例による積層板の加工方法を示す平面図である。   FIG. 1 is a side view showing a method of processing a laminated board according to an embodiment of the present invention. FIG. 2 is a plan view showing a method of processing a laminated board according to an embodiment of the present invention.

先ず、図1を参照して、積層板10について説明する。積層板10は、例えば図1に示すように基板12、および基板12と剥離可能に結合した補強板14を備える。積層板10は、後述の加工方法で加工された後、製品の製造に用いられる。1つの製品の製造に、複数の積層板10が用いられてもよい。製品としては、例えば表示パネル、太陽電池、薄膜2次電池などの電子デバイスが挙げられる。   First, the laminated board 10 is demonstrated with reference to FIG. For example, as shown in FIG. 1, the laminated plate 10 includes a substrate 12 and a reinforcing plate 14 detachably coupled to the substrate 12. The laminated plate 10 is used for manufacturing a product after being processed by a processing method described later. A plurality of laminated boards 10 may be used for manufacture of one product. Examples of the product include electronic devices such as a display panel, a solar battery, and a thin film secondary battery.

基板12は、製品の一部となるものであって、基板12上には、製品の製造工程において、製品の種類に応じた機能膜が形成される。機能膜は、複数の層で構成されてもよい。   The substrate 12 is a part of the product, and a functional film corresponding to the type of product is formed on the substrate 12 in the manufacturing process of the product. The functional film may be composed of a plurality of layers.

基板12は、例えば、ガラス基板、セラミックス基板、樹脂基板、金属基板、または半導体基板などである。これらの中でも、ガラス基板が好ましい。ガラス基板は耐薬品性、耐透湿性に優れ、且つ、線膨張係数が小さいからである。基板12の線膨張係数が大きいと、熱処理時に様々な不都合が生じやすく、例えば高温で形成した機能膜を室温まで冷却するときに機能膜のパターンが歪むことがある。   The substrate 12 is, for example, a glass substrate, a ceramic substrate, a resin substrate, a metal substrate, or a semiconductor substrate. Among these, a glass substrate is preferable. This is because the glass substrate is excellent in chemical resistance and moisture permeability resistance and has a small linear expansion coefficient. When the linear expansion coefficient of the substrate 12 is large, various inconveniences are likely to occur during the heat treatment, and for example, when the functional film formed at a high temperature is cooled to room temperature, the pattern of the functional film may be distorted.

ガラス基板のガラスとしては、例えば無アルカリガラス、ホウケイ酸ガラス、ソーダライムガラス、高シリカガラス、その他の酸化ケイ素を主な成分とする酸化物系ガラスなどが挙げられる。酸化物系ガラスは、酸化物換算による酸化ケイ素の含有量が40〜90質量%のガラスが好ましい。ガラス基板のガラスは、製品の種類に応じて選択される。例えば、液晶パネルの場合、アルカリ金属成分を実質的に含まないガラス(無アルカリガラス)が用いられる。   Examples of the glass of the glass substrate include alkali-free glass, borosilicate glass, soda lime glass, high silica glass, and other oxide-based glasses mainly composed of silicon oxide. The oxide glass is preferably a glass having a silicon oxide content of 40 to 90% by mass in terms of oxide. The glass of the glass substrate is selected according to the type of product. For example, in the case of a liquid crystal panel, glass (non-alkali glass) that does not substantially contain an alkali metal component is used.

基板12の厚さAは、基板12がガラス基板の場合、例えば0.3mm以下であり、より好ましくは0.1mm以下、さらに好ましくは0.05mm以下である。また、基板12の厚さAは、基板12がガラス基板の場合、成形性の観点から、好ましくは0.001mm以上である。   When the substrate 12 is a glass substrate, the thickness A of the substrate 12 is, for example, 0.3 mm or less, more preferably 0.1 mm or less, and further preferably 0.05 mm or less. Further, when the substrate 12 is a glass substrate, the thickness A of the substrate 12 is preferably 0.001 mm or more from the viewpoint of formability.

補強板14は、補強板14と基板12との剥離操作が行われるまで、基板12と結合し、基板12を補強する。補強板14の厚さBは、基板12の厚さAよりも厚くてよい。補強板14は、製品の製造工程の途中で、基板12から剥離され、製品の一部とはならない。   The reinforcing plate 14 is bonded to the substrate 12 and reinforces the substrate 12 until the peeling operation between the reinforcing plate 14 and the substrate 12 is performed. The thickness B of the reinforcing plate 14 may be thicker than the thickness A of the substrate 12. The reinforcing plate 14 is peeled off from the substrate 12 during the manufacturing process of the product and does not become a part of the product.

補強板14は、熱処理による反りや剥離を防止するため、基板12との熱膨張差の小さいものが好ましい。基板12がガラス基板の場合、補強板14はガラス板を含むものが好ましく、基板12のガラスと、補強板14のガラスとは同種のガラスであることが好ましい。   The reinforcing plate 14 preferably has a small difference in thermal expansion with respect to the substrate 12 in order to prevent warpage or peeling due to heat treatment. When the substrate 12 is a glass substrate, the reinforcing plate 14 preferably includes a glass plate, and the glass of the substrate 12 and the glass of the reinforcing plate 14 are preferably the same type of glass.

補強板14は、例えば、基板12と剥離可能に結合する剥離膜15、および剥離膜15を介して基板12を支持する支持板16を含む。剥離膜15と基板12とは、その間に作用するファンデルワールス力などにより剥離可能に結合される。剥離膜15は、樹脂膜、無機膜のいずれでもよい。無機膜は、例えば金属酸化物膜でよい。   The reinforcing plate 14 includes, for example, a peeling film 15 that is detachably coupled to the substrate 12 and a support plate 16 that supports the substrate 12 via the peeling film 15. The release film 15 and the substrate 12 are detachably coupled by van der Waals force acting between them. The release film 15 may be a resin film or an inorganic film. The inorganic film may be a metal oxide film, for example.

なお、本実施例の補強板14は、剥離膜15および支持板16で構成されるが、支持板16のみで構成され、支持板16(例えばガラス板)と基板12(例えばガラス基板)とが直接結合してもよい。支持板16における基板12との接触面、および、基板12における支持板16との接触面は、互いに結合しやすいように、それぞれ、所定値以下の表面粗さを有してよい。また、少なくとも一方の接触面に表面粗さの異なる領域を設けることによって、支持板16と基板12との界面に結合力の異なる領域が設けられてもよい。剥離操作が容易となる。支持板16における基板12との接触面、および、基板12における支持板16との接触面は、それぞれ、表面の活性を高める処理(例えば洗浄処理)が施されたものであってよい。   In addition, although the reinforcement board 14 of a present Example is comprised with the peeling film 15 and the support plate 16, it is comprised only with the support plate 16, and the support plate 16 (for example, glass plate) and the board | substrate 12 (for example, glass substrate) are comprised. You may combine directly. The contact surface of the support plate 16 with the substrate 12 and the contact surface of the substrate 12 with the support plate 16 may each have a surface roughness of a predetermined value or less so that they can be easily coupled to each other. In addition, by providing a region having a different surface roughness on at least one contact surface, a region having a different bonding force may be provided at the interface between the support plate 16 and the substrate 12. The peeling operation becomes easy. The contact surface of the support plate 16 with the substrate 12 and the contact surface of the substrate 12 with the support plate 16 may each be subjected to a treatment for increasing the surface activity (for example, a cleaning treatment).

なお、補強板14は、ガラス板と樹脂膜とを交互に積層したものであってもよく、複数の支持板16、複数の樹脂膜を有してよい。この場合、最外層の樹脂膜が剥離膜となる。   The reinforcing plate 14 may be a laminate of glass plates and resin films alternately, and may include a plurality of support plates 16 and a plurality of resin films. In this case, the outermost resin film becomes the release film.

支持板16は、剥離膜15を介して、基板12を支持する。支持板16は、例えばガラス板、セラミックス板、樹脂板、半導体板、又は金属板などである。基板12がガラス基板の場合、支持板16はガラス板であることが好ましい。一方、支持板16が樹脂板又は金属板であると、補強板14の撓み変形が容易であるので、補強板14と基板12との剥離が容易である。   The support plate 16 supports the substrate 12 through the release film 15. The support plate 16 is, for example, a glass plate, a ceramic plate, a resin plate, a semiconductor plate, or a metal plate. When the substrate 12 is a glass substrate, the support plate 16 is preferably a glass plate. On the other hand, when the support plate 16 is a resin plate or a metal plate, the reinforcement plate 14 can be easily bent and deformed, so that the reinforcement plate 14 and the substrate 12 can be easily separated.

支持板16と基板12との平均線膨張係数差(絶対値)は、基板12の寸法形状などに応じて適宜設定され、例えば35×10−7/℃以下であることが好ましい。ここで、「平均線膨張係数」とは、50℃〜300℃の温度範囲における平均線膨張係数(JIS R 3102)をいう。 The average linear expansion coefficient difference (absolute value) between the support plate 16 and the substrate 12 is appropriately set according to the dimensional shape and the like of the substrate 12, and is preferably, for example, 35 × 10 −7 / ° C. or less. Here, the “average linear expansion coefficient” refers to an average linear expansion coefficient (JIS R 3102) in a temperature range of 50 ° C. to 300 ° C.

支持板16の厚さCは、支持板16がガラス板の場合、例えば0.7mm以下である。また、支持板16の厚さCは、支持板16がガラス板の場合、基板12の補強のため、0.4mm以上であることが好ましい。   When the support plate 16 is a glass plate, the thickness C of the support plate 16 is, for example, 0.7 mm or less. Further, when the support plate 16 is a glass plate, the thickness C of the support plate 16 is preferably 0.4 mm or more in order to reinforce the substrate 12.

支持板16の外形は、支持板16が剥離膜15の全体を支持できるように、図1に示すように剥離膜15の外形と同一であるか、剥離膜15の外形よりも大きいことが好ましい。   The outer shape of the support plate 16 is preferably the same as or larger than the outer shape of the release film 15 as shown in FIG. 1 so that the support plate 16 can support the entire release film 15. .

剥離膜15は、剥離膜15と基板12との剥離操作が行われるまで、基板12の位置ずれを防止する。剥離膜15は剥離操作によって基板12から容易に剥離する。剥離操作による基板12の破損を防止できる。   The release film 15 prevents the displacement of the substrate 12 until the release operation between the release film 15 and the substrate 12 is performed. The release film 15 is easily peeled from the substrate 12 by a peeling operation. Damage to the substrate 12 due to the peeling operation can be prevented.

剥離膜15は、支持板16との結合力が基板12との結合力よりも相対的に高くなるように形成される。剥離操作によって積層板10が意図しない位置(剥離膜15と支持板16との間)で剥離するのを防止できる。   The release film 15 is formed so that the bonding force with the support plate 16 is relatively higher than the bonding force with the substrate 12. It is possible to prevent the laminate 10 from being peeled at an unintended position (between the release film 15 and the support plate 16) by the peeling operation.

剥離膜15の樹脂は、特に限定されない。例えば、剥離膜15の樹脂としては、アクリル樹脂、ポリオレフィン樹脂、ポリウレタン樹脂、ポリイミド樹脂、シリコーン樹脂、ポリイミドシリコーン樹脂などが挙げられる。いくつかの種類の樹脂を混合して用いることもできる。中でも、耐熱性や剥離性の観点から、シリコーン樹脂、ポリイミドシリコーン樹脂が好ましい。   The resin of the release film 15 is not particularly limited. For example, examples of the resin of the release film 15 include acrylic resin, polyolefin resin, polyurethane resin, polyimide resin, silicone resin, and polyimide silicone resin. Several types of resins can be mixed and used. Of these, silicone resins and polyimide silicone resins are preferred from the viewpoints of heat resistance and peelability.

剥離膜15の厚さDは、特に限定されないが、剥離膜15が樹脂膜の場合、好ましくは1μm〜50μm、より好ましくは4μm〜20μmである。剥離膜15の厚さDを1μm以上とすることで、剥離膜15と基板12との間に気泡や異物が混入した場合に、気泡や異物の厚さを吸収するように剥離膜15が変形できる。一方、剥離膜15の厚さDが50μm以下であると、剥離膜15の形成時間を短縮でき、さらに剥離膜15の樹脂を必要以上に使用しないため経済的である。   The thickness D of the release film 15 is not particularly limited, but when the release film 15 is a resin film, it is preferably 1 μm to 50 μm, more preferably 4 μm to 20 μm. By setting the thickness D of the release film 15 to 1 μm or more, the release film 15 is deformed so as to absorb the thickness of the bubbles and foreign objects when bubbles or foreign objects are mixed between the release film 15 and the substrate 12. it can. On the other hand, when the thickness D of the release film 15 is 50 μm or less, it is economical because the formation time of the release film 15 can be shortened and the resin of the release film 15 is not used more than necessary.

剥離膜15の外形は、剥離膜15が基板12の全体を支持できるように、図1に示すように基板12の外形と同一か、基板12の外形よりも大きいことが好ましい。剥離膜15の外形が基板12の外形よりも大きいと、剥離膜15の基板12からはみ出す部分を撓み変形させることで補強板14と基板12との剥離が徐々に行われ、剥離が円滑に行われる。   The outer shape of the release film 15 is preferably the same as or larger than the outer shape of the substrate 12 as shown in FIG. 1 so that the release film 15 can support the entire substrate 12. When the outer shape of the release film 15 is larger than the outer shape of the substrate 12, the portion of the release film 15 that protrudes from the substrate 12 is bent and deformed, whereby the reinforcing plate 14 and the substrate 12 are gradually peeled off, and the peeling is performed smoothly. Is called.

なお、剥離膜15は複数種類の樹脂膜からなっていてもよい。この場合「剥離膜の厚さ」は全ての樹脂膜の合計の厚さを意味する。   Note that the release film 15 may be composed of a plurality of types of resin films. In this case, the “thickness of the release film” means the total thickness of all the resin films.

次に、積層板10の製造方法について説明する。積層板10の製造方法としては、例えば、下記の(1)〜(3)の方法がある。   Next, the manufacturing method of the laminated board 10 is demonstrated. As a manufacturing method of the laminated board 10, there exist the following method (1)-(3), for example.

(1)支持板16上に流動性を有する樹脂組成物を塗布し、硬化させて、剥離膜15を形成した後、剥離膜15上に基板12を圧着する。樹脂組成物が硬化する時、樹脂組成物が支持板16と相互作用するので、支持板16と剥離膜15の結合力が、剥離膜15と基板12の結合力よりも高くなりやすい。   (1) A fluid resin composition is applied on the support plate 16 and cured to form the release film 15, and then the substrate 12 is pressure-bonded onto the release film 15. Since the resin composition interacts with the support plate 16 when the resin composition is cured, the bonding force between the support plate 16 and the release film 15 tends to be higher than the bond strength between the release film 15 and the substrate 12.

(2)所定の基材上に流動性を有する樹脂組成物を塗布し、硬化させて剥離膜15を形成した後、剥離膜15を所定の基材から剥離して、フィルムの形態で、基板12と支持板16との間に挟んで圧着する。剥離膜15の圧着後の結合力が、基板12に対して低く、支持板16に対して高い場合に有効である。剥離膜15との接触前に、基板12または支持板16の表面を表面処理して、剥離膜15との圧着後の結合力に差をつけてもよい。   (2) A flowable resin composition is applied on a predetermined base material and cured to form a release film 15, and then the release film 15 is released from the predetermined base material to form a substrate in the form of a film. 12 and the support plate 16 are clamped. This is effective when the bonding force of the release film 15 after pressure bonding is low with respect to the substrate 12 and high with respect to the support plate 16. Before the contact with the release film 15, the surface of the substrate 12 or the support plate 16 may be surface-treated to make a difference in the bonding force after the press-bonding with the release film 15.

(3)基板12と支持板16との間に樹脂組成物を挟んで、硬化させて剥離膜15を形成する。樹脂組成物の硬化後の結合力が、基板12に対して低く、支持板16に対して高い場合に有効である。樹脂組成物との接触前に、基板12または支持板16の表面を表面処理して、樹脂組成物の硬化後の結合力に差をつけてもよい。   (3) The resin composition is sandwiched between the substrate 12 and the support plate 16 and cured to form the release film 15. This is effective when the bonding strength of the resin composition after curing is low with respect to the substrate 12 and high with respect to the support plate 16. Before the contact with the resin composition, the surface of the substrate 12 or the support plate 16 may be surface-treated to make a difference in the bonding strength after curing of the resin composition.

上記(1)及び(2)の方法における圧着は、クリーン度の高い環境下で実施されてよい。圧着時の周辺の気圧は、大気圧でもよいが、空気の噛み込みを抑制するため、大気圧よりも低い負圧であることが好ましい。圧着の方式としては、ロール式、プレス式などがある。圧着温度は、室温よりも高い温度でもよいが、剥離膜15としての樹脂膜の劣化を防止するため、室温であってよい。   The pressure bonding in the methods (1) and (2) may be performed in an environment with a high degree of cleanliness. The atmospheric pressure at the time of pressure bonding may be atmospheric pressure, but is preferably a negative pressure lower than atmospheric pressure in order to suppress air entrainment. There are a roll type, a press type, and the like as a method of pressure bonding. The pressure bonding temperature may be higher than room temperature, but may be room temperature in order to prevent deterioration of the resin film as the release film 15.

剥離膜15となる樹脂組成物は、縮合反応型、付加反応型、紫外線硬化型、電子線硬化型のいずれの仕組みで硬化するものでもよい。付加反応型の樹脂組成物は、硬化しやすく、剥離性に優れ、耐熱性も高いため、特に好ましい。   The resin composition to be the release film 15 may be cured by any mechanism of a condensation reaction type, an addition reaction type, an ultraviolet curable type, and an electron beam curable type. The addition reaction type resin composition is particularly preferable because it easily cures, has excellent peelability, and has high heat resistance.

また、剥離膜15となる樹脂組成物は、溶剤型、エマルジョン型、無溶剤型のいずれの形態で使用されるものでよいが、生産性、環境特性の観点で、無溶剤型が好ましい。また、無溶剤型の樹脂組成物は、硬化時に発泡しうる溶剤を含まないため、欠陥の少ない剥離膜15が得られる。   Further, the resin composition to be the release film 15 may be used in any form of a solvent type, an emulsion type, and a solventless type, but a solventless type is preferable from the viewpoint of productivity and environmental characteristics. Further, since the solventless resin composition does not contain a solvent that can foam during curing, the release film 15 with few defects can be obtained.

硬化の仕組みが付加反応型であって、使用形態が無溶剤型であるシリコーン樹脂組成物としては、ビニル基を有する直鎖状ポリオルガノシロキサンと、ハイドロシリル基を有するメチルハイドロジェンポリシロキサンとを含むものがある。このシリコーン樹脂組成物は、白金触媒の存在下で加熱硬化され、シリコーン樹脂膜となる。   As a silicone resin composition having a curing mechanism of addition reaction type and a usage form of solvent-free type, linear polyorganosiloxane having a vinyl group and methylhydrogen polysiloxane having a hydrosilyl group are used. There is something to include. This silicone resin composition is heated and cured in the presence of a platinum catalyst to form a silicone resin film.

剥離膜15となる樹脂組成物の塗布方法は、例えばスプレーコート法、ダイコート法、スピンコート法、ディップコート法、ロールコート法、バーコート法、スクリーン印刷法、グラビアコート法などがある。これらの塗布方法は、樹脂組成物の種類に応じて適宜選択される。   Examples of the method for applying the resin composition to be the release film 15 include spray coating, die coating, spin coating, dip coating, roll coating, bar coating, screen printing, and gravure coating. These coating methods are appropriately selected according to the type of the resin composition.

剥離膜15となる樹脂組成物の塗工量は、樹脂組成物の種類などに応じて適宜選択される。例えば、上記シリコーン樹脂組成物の場合、好ましくは1g/m〜100g/m、より好ましくは5g/m〜20g/mである。 The coating amount of the resin composition that becomes the release film 15 is appropriately selected according to the type of the resin composition. For example, in the case of the silicone resin composition, preferably from 1g / m 2 ~100g / m 2 , more preferably 5g / m 2 ~20g / m 2 .

剥離膜15となる樹脂組成物の硬化条件は、樹脂組成物の種類などに応じて適宜選択される。例えば、上記シリコーン樹脂組成物として、直鎖状ポリオルガノシロキサンとメチルハイドロジェンポリシロキサンの合計量100質量部に対して、白金系触媒を2質量部配合した場合、大気中で加熱する温度は、50℃〜250℃、好ましくは100℃〜200℃である。また、この場合の反応時間は5分間〜60分間、好ましくは10分間〜30分間とする。樹脂組成物の硬化条件が上記の反応時間の範囲及び反応温度の範囲であれば、シリコーン樹脂の酸化分解が同時に起こらず、低分子量のシリコーン成分が生成せず、補強板と基板との剥離時に基板側に樹脂が残りにくい。   The curing conditions for the resin composition to be the release film 15 are appropriately selected according to the type of the resin composition. For example, as the silicone resin composition, when 2 parts by mass of a platinum-based catalyst is blended with respect to 100 parts by mass of the total amount of linear polyorganosiloxane and methylhydrogenpolysiloxane, the temperature heated in the atmosphere is It is 50 ° C to 250 ° C, preferably 100 ° C to 200 ° C. In this case, the reaction time is 5 minutes to 60 minutes, preferably 10 minutes to 30 minutes. If the curing conditions of the resin composition are the above reaction time range and reaction temperature range, the oxidative decomposition of the silicone resin does not occur at the same time, a low molecular weight silicone component is not generated, and the reinforcing plate and the substrate are peeled off. Resin hardly remains on the substrate side.

次に、製造された積層板の加工方法について図1および図2を再度参照して説明する。積層板の加工方法は、図1および図2に示すように、積層板10の端部を砥石30で研削する面取り工程を有する。   Next, a method for processing the manufactured laminate will be described with reference to FIGS. 1 and 2 again. The processing method of a laminated board has a chamfering process which grinds the edge part of the laminated board 10 with the grindstone 30, as shown in FIG. 1 and FIG.

砥石30は円板状であって、砥石30の外周面には環状の研削溝32が形成されている。研削溝32の断面形状は、例えば略台形状であって、略等脚台形状であってよい。砥石30の径方向内方に向かって、研削溝32の溝幅が徐々に狭くなっている。研削溝32の底面と、研削溝32の各側面との境界部は、砥石30の径方向内方に向けて凸の曲面状となっている。   The grindstone 30 is disc-shaped, and an annular grinding groove 32 is formed on the outer peripheral surface of the grindstone 30. The cross-sectional shape of the grinding groove 32 is, for example, a substantially trapezoidal shape, and may be a substantially isosceles trapezoidal shape. The groove width of the grinding groove 32 is gradually reduced toward the inside in the radial direction of the grindstone 30. A boundary portion between the bottom surface of the grinding groove 32 and each side surface of the grinding groove 32 has a curved surface shape that protrudes inward in the radial direction of the grindstone 30.

面取り工程では、先ず、図1に示すように、砥石30の中心線に対して積層板10の板厚方向が平行になるように、積層板10をセッティングする。この状態で、砥石30の中心線を中心に砥石30を回転させながら、研削溝32の壁面を積層板10の端部に押し当てて、積層板10の端部を砥石30で研削する。このとき、研削溝32の両側面が積層板10の端部を挟んで削ると共に、研削溝32の底面が積層板10の端部を削る。研削溝32の両側面が積層板10の端部を挟むことで、積層板10と砥石30との位置ずれを防止できる。面取り工程では、図2に示すように、砥石30と、積層板10とを相対的に移動させ、積層板10の外周の少なくとも一部を研削する。   In the chamfering step, first, as shown in FIG. 1, the laminated plate 10 is set so that the thickness direction of the laminated plate 10 is parallel to the center line of the grindstone 30. In this state, while rotating the grindstone 30 around the center line of the grindstone 30, the wall surface of the grinding groove 32 is pressed against the end of the laminated plate 10, and the end of the laminated plate 10 is ground with the grindstone 30. At this time, both side surfaces of the grinding groove 32 are scraped across the end portion of the laminated plate 10, and the bottom surface of the grinding groove 32 scrapes the end portion of the laminated plate 10. Since both side surfaces of the grinding groove 32 sandwich the end portion of the laminated plate 10, it is possible to prevent the positional deviation between the laminated plate 10 and the grindstone 30. In the chamfering step, as shown in FIG. 2, the grindstone 30 and the laminated plate 10 are relatively moved to grind at least a part of the outer periphery of the laminated plate 10.

図3は、本発明の一実施例による面取り工程で砥石から基板に作用する力を示す断面図である。図3に示すように、面取り工程では、砥石30から基板12に力Gが作用する。この力Gは、砥石30の中心線(つまり、積層板10の板厚方向)と垂直な方向に作用する。この力Gのうち、研削溝32の壁面に対して垂直な分力G1によって、基板12の研削面にマイクロクラックが生じうる。基板12と補強板14との界面と、基板12の研削面とのなす角θが小さいほど、マイクロクラックを生じさせうる分力G1が小さい。   FIG. 3 is a cross-sectional view showing a force acting on a substrate from a grindstone in a chamfering process according to an embodiment of the present invention. As shown in FIG. 3, in the chamfering process, a force G acts on the substrate 12 from the grindstone 30. This force G acts in a direction perpendicular to the center line of the grindstone 30 (that is, the thickness direction of the laminated plate 10). Of this force G, a micro-crack can occur on the ground surface of the substrate 12 due to the component force G1 perpendicular to the wall surface of the grinding groove 32. The smaller the angle θ formed by the interface between the substrate 12 and the reinforcing plate 14 and the ground surface of the substrate 12, the smaller the component force G1 that can cause microcracks.

本実施例では、基板12と補強板14との界面と、基板12の研削面とのなす角θが30°以下となっており、基板12の研削面にマイクロクラックを生じさせうる分力G1が十分に小さく、基板12が欠けにくい。   In this embodiment, the angle θ formed by the interface between the substrate 12 and the reinforcing plate 14 and the grinding surface of the substrate 12 is 30 ° or less, and the component force G1 that can cause microcracks on the grinding surface of the substrate 12. Is sufficiently small and the substrate 12 is not easily chipped.

基板12と補強板14との界面は、基板12の研削面に対して斜めになるように、研削溝32の底面ではなく、図1に示すように、研削溝32の一側面で研削されてよい。この場合、基板12の研削面は、平坦な部分のみで構成される。   The interface between the substrate 12 and the reinforcing plate 14 is ground not on the bottom surface of the grinding groove 32 but on one side surface of the grinding groove 32 as shown in FIG. 1 so as to be inclined with respect to the grinding surface of the substrate 12. Good. In this case, the ground surface of the substrate 12 is composed of only a flat portion.

なお、本実施例では、基板12と補強板14との界面は、研削溝32の一側面で研削されるが、研削溝32の一側面と、研削溝32の底面との曲面状の境界部で研削されてもよい。この場合、基板12の研削面は、平坦な部分と、湾曲した部分とで構成される。この湾曲した部分の接線と、基板12と補強板14との界面とのなす角が、30°以下となっていればよい。   In the present embodiment, the interface between the substrate 12 and the reinforcing plate 14 is ground on one side surface of the grinding groove 32, but a curved boundary portion between one side surface of the grinding groove 32 and the bottom surface of the grinding groove 32. It may be ground with. In this case, the ground surface of the substrate 12 includes a flat portion and a curved portion. The angle formed by the tangent line of the curved portion and the interface between the substrate 12 and the reinforcing plate 14 may be 30 ° or less.

また、基板12と補強板14との界面と、基板12の研削面とのなす角θは26°よりも大きい。基板12と補強板14との界面と、基板12の研削面との交わる部分が尖り過ぎていないので、基板12と補強板14とを剥離するため、基板12と補強板14との間に薄い刃を挿入したとき、基板12が欠けにくい。   Further, the angle θ formed by the interface between the substrate 12 and the reinforcing plate 14 and the ground surface of the substrate 12 is larger than 26 °. Since the portion where the interface between the substrate 12 and the reinforcing plate 14 intersects with the ground surface of the substrate 12 is not too sharp, the substrate 12 and the reinforcing plate 14 are peeled off, so that the substrate 12 and the reinforcing plate 14 are thin. When the blade is inserted, the substrate 12 is not easily chipped.

積層板10の砥石30で研削した研削面(以下、単に「積層板10の研削面」という)は、例えば、積層板10の表面および裏面からそれぞれ斜めに延びる傾斜部と、積層板10の表面および裏面に対して垂直な垂直部と、各傾斜部と垂直部との間に形成される曲面部とを有する。   The grinding surface (hereinafter, simply referred to as “grinding surface of the laminated plate 10”) of the laminated plate 10 ground with the grindstone 30 includes, for example, inclined portions extending obliquely from the front and back surfaces of the laminated plate 10 and the surface of the laminated plate 10, respectively. And a vertical portion perpendicular to the back surface, and a curved surface portion formed between each inclined portion and the vertical portion.

加工された積層板10の表面から斜めに延びる傾斜部と、加工された積層板10の裏面から斜めに延びる傾斜部とは、加工された積層板10の表面と裏面との間の中心面に対して対称であってよい。   The inclined portion extending obliquely from the front surface of the processed laminated plate 10 and the inclined portion extending obliquely from the rear surface of the processed laminated plate 10 are located on the center plane between the front surface and the rear surface of the processed laminated plate 10. It may be symmetrical.

積層板10の研削面の曲面部の断面形状は、砥石30の径方向内方に向けて凸の形状であって、例えば円弧状である。積層板10の研削面の曲面部の曲率半径Rは、例えば0.05mm〜0.20mmである。   The cross-sectional shape of the curved surface portion of the grinding surface of the laminated plate 10 is a convex shape toward the inside in the radial direction of the grindstone 30, for example, an arc shape. The curvature radius R of the curved surface portion of the ground surface of the laminate 10 is, for example, 0.05 mm to 0.20 mm.

積層板10の研削面の垂直部は、積層板10の板厚方向における寸法Fが例えば0.05mm〜0.30mmである。   The vertical part of the grinding surface of the laminated plate 10 has a dimension F in the thickness direction of the laminated plate 10 of, for example, 0.05 mm to 0.30 mm.

ところで、加工された積層板10は、補強板14を下向きにしてステージ上に載せられ、ステージ上に設けられる位置決めブロックと当接されることがある。   By the way, the processed laminated plate 10 may be placed on the stage with the reinforcing plate 14 facing downward and may come into contact with a positioning block provided on the stage.

本実施例では、加工された積層板10の板厚方向視で、基板12よりも外方に補強板14が突出しており、基板12が位置決めブロックと接触しないので、基板12が破損しにくい。補強板14の突出寸法Eは例えば0.05mm〜0.30mmである。   In the present embodiment, the reinforcing plate 14 protrudes outward from the substrate 12 in the thickness direction view of the processed laminated plate 10, and the substrate 12 does not come into contact with the positioning block, so that the substrate 12 is not easily damaged. The protruding dimension E of the reinforcing plate 14 is, for example, 0.05 mm to 0.30 mm.

次に、加工された積層板10を用いた電子デバイスの製造方法について説明する。電子デバイスの製造方法は、加工された積層板10の基板12上に機能膜を形成する工程と、機能膜を形成した基板12と補強板14とを剥離する工程とを有してよい。   Next, a method for manufacturing an electronic device using the processed laminated plate 10 will be described. The electronic device manufacturing method may include a step of forming a functional film on the processed substrate 12 of the laminated plate 10 and a step of peeling the substrate 12 and the reinforcing plate 14 on which the functional film is formed.

機能膜の形成には、リソグラフィ技術やエッチング技術が用いられ、レジスト液が用いられることがある。レジスト液は、加工された積層板10の研削面にまで広がることがある。   In forming the functional film, a lithography technique or an etching technique is used, and a resist solution may be used. The resist solution may spread to the ground surface of the processed laminated plate 10.

本実施例の積層板10の研削面は、基板12と補強板14との界面近傍に欠けがないので、レジストの残渣の除去が容易である。残渣は熱処理で発塵源となるので、残渣が少なくなることで、電子デバイスの歩留まりが向上する。   Since the ground surface of the laminated board 10 of the present embodiment is not chipped near the interface between the substrate 12 and the reinforcing plate 14, it is easy to remove the resist residue. Since the residue becomes a source of dust generation by heat treatment, the yield of the electronic device is improved by reducing the residue.

基板12と補強板14との剥離は、例えば、基板12と補強板14との間に薄い刃を挿入し、剥離起点となる隙間を形成した後、基板12を平坦に保持しながら、補強板14を剥離起点側から反対側に向けて順次曲げ変形することで行われる。   The substrate 12 and the reinforcing plate 14 are peeled off by, for example, inserting a thin blade between the substrate 12 and the reinforcing plate 14 to form a gap serving as a starting point of peeling, and then holding the substrate 12 flat, This is performed by sequentially bending and deforming 14 from the peeling starting point side to the opposite side.

次に、電子デバイスとしての液晶パネルの製造方法について説明する。液晶パネルの製造方法は、例えば、TFT基板作製工程と、CF基板作製工程と、組み立て工程と、剥離工程とを有する。   Next, a method for manufacturing a liquid crystal panel as an electronic device will be described. The liquid crystal panel manufacturing method includes, for example, a TFT substrate manufacturing process, a CF substrate manufacturing process, an assembling process, and a peeling process.

TFT基板作製工程では、加工された積層板10の基板12上に薄膜トランジスタ(TFT)などを形成してTFT基板を作製する。TFT基板の作製には、リソグラフィ技術やエッチング技術が用いられ、レジスト液が用いられる。   In the TFT substrate manufacturing step, a thin film transistor (TFT) or the like is formed on the processed substrate 12 of the laminated plate 10 to manufacture a TFT substrate. For manufacturing the TFT substrate, a lithography technique or an etching technique is used, and a resist solution is used.

CT基板作製工程では、加工された別の積層板10の基板12上に透明導電膜やカラーフィルタ(CF)などを形成してCF基板を作製する。CF基板の作製には、リソグラフィ技術が用いられ、レジスト液が用いられる。   In the CT substrate manufacturing step, a CF substrate is manufactured by forming a transparent conductive film, a color filter (CF), or the like on the substrate 12 of another processed laminated plate 10. For the production of the CF substrate, a lithography technique is used, and a resist solution is used.

組み立て工程は、TFT基板とCF基板との間に液晶材を封止する工程を有する。TFT基板とCF基板との間に液晶材を注入する方法としては、減圧注入法または滴下注入法がある。   The assembly process includes a process of sealing a liquid crystal material between the TFT substrate and the CF substrate. As a method for injecting a liquid crystal material between the TFT substrate and the CF substrate, there is a reduced pressure injection method or a drop injection method.

減圧注入法では、例えば、先ず、シール材およびスペーサ材を介してTFT基板とCF基板とを貼り合わせることで、大型パネルを作製する。作製した大型パネルは、複数のセルに切断される。次いで、各セルの内部を真空引きし、各セルの側面に設けられた注入孔から各セルの内部に液晶材を注入した後、注入孔が封止される。続いて、各セルに偏光板を貼り付けることで、液晶パネルが製造される。   In the reduced pressure injection method, for example, first, a large panel is manufactured by bonding a TFT substrate and a CF substrate through a sealing material and a spacer material. The produced large panel is cut into a plurality of cells. Next, the inside of each cell is evacuated, and a liquid crystal material is injected into each cell from the injection hole provided on the side surface of each cell, and then the injection hole is sealed. Subsequently, a liquid crystal panel is manufactured by attaching a polarizing plate to each cell.

滴下注入法では、例えば、先ず、TFT基板およびCF基板のいずれか一方に液晶材を滴下し、次いで、シール材およびスペーサ材を介してTFT基板とCF基板とを貼り合わせることで、大型パネルを作製する。作製した大型パネルは、複数のセルに切断される。続いて、各セルに偏光板を貼り付けることで、液晶パネルが製造される。   In the dropping injection method, for example, first, a liquid crystal material is dropped on one of the TFT substrate and the CF substrate, and then the TFT substrate and the CF substrate are bonded to each other through a sealing material and a spacer material, thereby forming a large panel. Make it. The produced large panel is cut into a plurality of cells. Subsequently, a liquid crystal panel is manufactured by attaching a polarizing plate to each cell.

剥離工程では、基板12と補強板14とを剥離する。剥離工程は、TFT基板作製工程およびCF基板作製工程の後であって組み立て工程の前、または、組み立て工程の途中もしくは後で行われてよい。   In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. The peeling process may be performed after the TFT substrate manufacturing process and the CF substrate manufacturing process, before the assembly process, or during or after the assembly process.

例えば、減圧注入法による組み立て工程の途中で剥離工程が行われる場合、剥離工程は、大型パネルの作製後であって大型パネルの切断前、または、液晶材の封入後であって偏光板の貼り付け前に行われよい。   For example, when the peeling process is performed in the middle of the assembly process by the vacuum injection method, the peeling process is performed after the large panel is manufactured and before the large panel is cut, or after the liquid crystal material is sealed and the polarizing plate is applied. May be done before application.

また、適下注入法による組み立て工程の途中で剥離工程が行われる場合、剥離工程は、大型パネルの作製後であって大型パネルの切断前、または、大型パネルの切断後であって偏光板の貼り付け前に行われてもよい。   In addition, when the peeling process is performed in the middle of the assembly process by the appropriate injection method, the peeling process is performed after the large panel is manufactured and before the large panel is cut, or after the large panel is cut and the polarizing plate It may be performed before pasting.

次に、電子デバイスとしての有機ELパネル(OLED)の製造方法について説明する。有機ELパネルの製造方法は、例えば、有機EL素子形成工程と、貼り合わせ工程と、剥離工程とを有する。   Next, a method for manufacturing an organic EL panel (OLED) as an electronic device will be described. The manufacturing method of an organic EL panel includes, for example, an organic EL element forming process, a bonding process, and a peeling process.

有機EL素子形成工程では、加工された積層板10の基板12上に有機EL素子を形成する。有機EL素子は、例えば、透明電極層、正孔輸送層、発光層、電子輸送層などからなる。有機EL素子の形成には、フォトリソグラフィ技術が用いられ、レジスト液が用いられる。   In the organic EL element forming step, an organic EL element is formed on the processed substrate 12 of the laminated plate 10. An organic EL element consists of a transparent electrode layer, a positive hole transport layer, a light emitting layer, an electron carrying layer etc., for example. For the formation of the organic EL element, a photolithography technique is used, and a resist solution is used.

貼り合わせ工程では、有機EL素子が形成された基板と対向基板とを貼り合わせる。有機EL素子を形成した基板は複数のセルに切断され、各セルと対向基板とが貼り合わされてよい。   In the bonding step, the substrate on which the organic EL element is formed and the counter substrate are bonded together. The substrate on which the organic EL element is formed may be cut into a plurality of cells, and each cell and the counter substrate may be bonded together.

剥離工程では、基板12と補強板14とを剥離する。剥離工程は、例えば、有機EL素子形成工程の後であって貼り合わせ工程の前、または、貼り合わせ工程の途中もしくは後で行われてよい。   In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. The peeling step may be performed, for example, after the organic EL element forming step and before the bonding step, or during or after the bonding step.

次に、電子デバイスとしての太陽電池の製造方法について説明する。太陽電池の製造方法は、太陽電池素子形成工程と、剥離工程とを有する。   Next, the manufacturing method of the solar cell as an electronic device is demonstrated. The manufacturing method of a solar cell has a solar cell element formation process and a peeling process.

太陽電池素子形成工程では、加工された積層板10の基板12上に太陽電池素子を形成する。太陽電池素子は、例えば、透明電極層、半導体層などからなる。太陽電池素子の形成には、フォトリソグラフィ技術が用いられ、レジスト液が用いられる。   In the solar cell element forming step, a solar cell element is formed on the processed substrate 12 of the laminated plate 10. A solar cell element consists of a transparent electrode layer, a semiconductor layer, etc., for example. For the formation of the solar cell element, a photolithography technique is used, and a resist solution is used.

剥離工程では、基板12と補強板14とを剥離する。剥離工程は、例えば、太陽電池素子形成工程の後に行われてよい。   In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. A peeling process may be performed after a solar cell element formation process, for example.

[試験例1〜4]
試験例1〜4では、積層板として、支持板上に流動性を有する樹脂組成物を塗布し、硬化させて、剥離膜を形成し、形成した剥離膜上にガラス基板を圧着したものを用意した。試験例1〜4の積層板は、同じ構成とした。
[Test Examples 1 to 4]
In Test Examples 1 to 4, a laminate is prepared by applying a resin composition having fluidity on a support plate and curing it to form a release film, and pressing a glass substrate on the formed release film. did. The laminates of Test Examples 1 to 4 have the same configuration.

支持板のガラス板としては、旭硝子社製の無アルカリガラス板(920mm×730mm×厚さ0.5mm)を用いた。   As the glass plate of the support plate, an alkali-free glass plate (920 mm × 730 mm × 0.5 mm thickness) manufactured by Asahi Glass Co., Ltd. was used.

樹脂組成物としては、無溶剤付加反応型シリコーン(信越シリコーン社製、KNS−320A)100質量部と白金系触媒(信越シリコーン社製、CAT−PL−56)2質量部との混合物を用いた。この混合物をダイコータでガラス板上に塗布し220℃で30分熱処理することにより、剥離膜(920mm×730mm×厚さ8μm)を形成した。   As the resin composition, a mixture of 100 parts by mass of a solvent-free addition reaction type silicone (manufactured by Shin-Etsu Silicone, KNS-320A) and 2 parts by mass of a platinum-based catalyst (manufactured by Shin-Etsu Silicone, CAT-PL-56) was used. . This mixture was applied onto a glass plate with a die coater and heat-treated at 220 ° C. for 30 minutes to form a release film (920 mm × 730 mm × thickness 8 μm).

ガラス基板としては、旭硝子社製の無アルカリガラス板(920mm×730mm×厚さ0.1mm)を用いた。   As the glass substrate, an alkali-free glass plate (920 mm × 730 mm × thickness 0.1 mm) manufactured by Asahi Glass Co., Ltd. was used.

試験例1〜4では、略矩形状の積層板の4辺のそれぞれを表1に示す寸法に砥石で研削し、ガラス基板に欠けが発生したか否かを顕微鏡で調べた。砥石の砥粒としては、平均粒径が30μmのダイヤモンド砥粒を用いた。また、砥石の研削溝の断面形状は略等脚台形とした。ガラス基板の研削面に長さが0.03mm以上の欠けが発生しなかった場合を「○」、ガラス基板の研削面に長さが0.03mm以上0.05mm未満の欠けが発生した場合を「△」、ガラス基板の研削面に長さが0.05mm以上の欠けが発生した場合を「×」とした。   In Test Examples 1 to 4, each of the four sides of the substantially rectangular laminated plate was ground to a size shown in Table 1 with a grindstone, and whether or not chipping occurred in the glass substrate was examined with a microscope. As the abrasive grains of the grindstone, diamond abrasive grains having an average particle diameter of 30 μm were used. The cross-sectional shape of the grinding groove of the grindstone was a substantially isosceles trapezoid. A case where a chip having a length of 0.03 mm or more does not occur on the ground surface of the glass substrate is “◯”, and a case where a chip having a length of 0.03 mm or more and less than 0.05 mm is generated on the ground surface of the glass substrate. “Δ”, and “x” when a chip having a length of 0.05 mm or more occurred on the ground surface of the glass substrate.

次いで、試験例1〜4では、補強板を下向きにして積層板をステージに載せた状態で、ステージ上に設けられる位置決めブロックに対して積層板を100mm/sの速度で衝突させ、ガラス基板の上面と研削面との角部に欠けが発生したか否かを顕微鏡で調べた。位置決めブロックにおける積層板との衝突面は、ステージ上面に対して垂直とした。ガラス基板の上面と研削面との角部に長さが0.03mm以上の欠けが発生しなかった場合を「○」、ガラス基板の上面と研削面との角部に長さが0.03mm以上0.05mm未満の欠けが発生した場合を「△」、ガラス基板の上面と研削面との角部に長さが0.05mm以上の欠けが発生した場合を「×」とした。   Next, in Test Examples 1 to 4, with the reinforcing plate facing downward, the laminated plate was placed on the stage, and the laminated plate was made to collide with the positioning block provided on the stage at a speed of 100 mm / s. It was examined with a microscope whether chipping occurred at the corner between the upper surface and the ground surface. The collision surface with the laminated plate in the positioning block was perpendicular to the upper surface of the stage. “○” indicates that no chipping with a length of 0.03 mm or more occurred in the corner between the upper surface of the glass substrate and the ground surface, and the length of 0.03 mm at the corner between the upper surface of the glass substrate and the ground surface. The case where a chip having a length of less than 0.05 mm occurs is “Δ”, and the case where a chip having a length of 0.05 mm or more is generated at the corner between the upper surface and the ground surface of the glass substrate is “X”.

次いで、試験例1〜4では、ガラス基板と補強板とを剥離し、剥離中にガラス基板が割れるか否かを調べた。剥離試験では、砥石で研削した積層板の4隅のうち、位置決めブロックと衝突させなかった部分の、ガラス基板と補強板との間に薄い刃を挿入して、剥離起点となる隙間を形成し、ガラス基板を平坦に保持しながら、補強板を剥離起点側から反対側に順次曲げ変形させた。剥離中、基板が割れなかった場合を「○」、基板が割れた場合を「×」とした。   Next, in Test Examples 1 to 4, the glass substrate and the reinforcing plate were peeled off, and it was examined whether or not the glass substrate was broken during peeling. In the peel test, a thin blade is inserted between the glass substrate and the reinforcing plate in the four corners of the laminated plate ground with the grindstone so as not to collide with the positioning block, thereby forming a gap as a separation starting point. The reinforcing plate was sequentially bent and deformed from the peeling starting side to the opposite side while holding the glass substrate flat. The case where the substrate was not cracked during peeling was indicated as “◯”, and the case where the substrate was cracked was indicated as “x”.

試験の結果を表1に示す。表1において、Aはガラス基板の厚さ、Bは補強板の厚さ、Cは支持板としてのガラス板の厚さ、Dは剥離膜としてのシリコーン膜の厚さ、θはガラス基板と補強板との界面と、ガラス基板の研削面とのなす角をそれぞれ表す。また、表1において、Rは積層板の研削面の曲面部の曲率半径、Eは加工された積層板の板厚方向視での補強板のガラス基板からの突出寸法、Fは積層板の研削面の垂直部の、積層板の板厚方向における寸法をそれぞれ表す。   The test results are shown in Table 1. In Table 1, A is the thickness of the glass substrate, B is the thickness of the reinforcing plate, C is the thickness of the glass plate as the support plate, D is the thickness of the silicone film as the release film, and θ is the glass substrate and reinforcement. The angle between the interface with the plate and the ground surface of the glass substrate is shown. In Table 1, R is the radius of curvature of the curved portion of the grinding surface of the laminated plate, E is the protruding dimension of the reinforcing plate from the glass substrate in the thickness direction of the processed laminated plate, and F is the grinding of the laminated plate. The dimension in the plate | board thickness direction of a laminated board of the vertical part of a surface is each represented.

Figure 2014114183
表1に示すように、ガラス基板と補強板との界面と、ガラス基板の研削面とのなす角θが30°以下であれば、研削時の欠けがほとんど発生しない。また、加工された積層板の板厚方向視での補強板のガラス基板からの突出寸法Eが0.05mm以上であれば、位置決め時の欠けがほとんど発生しない。また、ガラス基板と補強板との界面と、ガラス基板の研削面とのなす角θが26°よりも大きければ、剥離時の割れがほとんど発生しない。
Figure 2014114183
As shown in Table 1, if the angle θ formed by the interface between the glass substrate and the reinforcing plate and the ground surface of the glass substrate is 30 ° or less, chipping during grinding hardly occurs. Moreover, if the protrusion dimension E from the glass substrate of the reinforcing plate in the thickness direction view of the processed laminated plate is 0.05 mm or more, chipping at the time of positioning hardly occurs. Further, if the angle θ formed by the interface between the glass substrate and the reinforcing plate and the ground surface of the glass substrate is larger than 26 °, almost no cracking occurs during peeling.

[試験例5〜8]
試験例5〜8では、ガラス基板として、旭硝子社製の無アルカリガラス板(920mm×730mm×厚さ0.2mm)を用いた以外、試験例1〜4と同様の試験を行った。試験の結果を表2に示す。
[Test Examples 5 to 8]
In Test Examples 5 to 8, tests similar to Test Examples 1 to 4 were performed except that an alkali-free glass plate (920 mm x 730 mm x thickness 0.2 mm) manufactured by Asahi Glass Co., Ltd. was used as the glass substrate. The test results are shown in Table 2.

Figure 2014114183
表2に示すように、ガラス基板と補強板との界面と、ガラス基板の研削面とのなす角θが30°以下であれば、研削時の欠けがほとんど発生しない。また、加工された積層板の板厚方向視での補強板のガラス基板からの突出寸法Eが0.05mm以上であれば、位置決め時の欠けがほとんど発生しない。また、ガラス基板と補強板との界面と、ガラス基板の研削面とのなす角θが26°よりも大きければ、剥離時の割れがほとんど発生しない。
Figure 2014114183
As shown in Table 2, if the angle θ formed by the interface between the glass substrate and the reinforcing plate and the ground surface of the glass substrate is 30 ° or less, chipping during grinding hardly occurs. Moreover, if the protrusion dimension E from the glass substrate of the reinforcing plate in the thickness direction view of the processed laminated plate is 0.05 mm or more, chipping at the time of positioning hardly occurs. Further, if the angle θ formed by the interface between the glass substrate and the reinforcing plate and the ground surface of the glass substrate is larger than 26 °, almost no cracking occurs during peeling.

以上、積層板の加工方法、加工された積層板の実施例などを説明したが、本発明は上記実施例などに限定されず、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形、改良が可能である。   As mentioned above, although the processing method of a laminated board, the Example of the processed laminated board, etc. were demonstrated, this invention is not limited to the said Example etc., In the range of the summary of this invention described in the claim Various modifications and improvements are possible.

例えば、上記実施例などでは、積層板10の研削面は、積層板10の表面および裏面からそれぞれ斜めに延びる傾斜部と、積層板10の表面および裏面に対して垂直な垂直部と、各傾斜部と垂直部との間に形成される曲面部とで構成されるが、その構成は多種多様であってよい。例えば、積層板の研削面は、積層板10の表面および裏面からそれぞれ斜めに延びる傾斜部と、2つの傾斜部の間に形成される曲面部とで構成されてもよい。曲面部は例えば円弧面状であって、積層板10の板厚方向視で、傾斜部よりも外方に突出する。   For example, in the above-described embodiment, the grinding surface of the laminated plate 10 includes an inclined portion extending obliquely from the front surface and the back surface of the laminated plate 10, a vertical portion perpendicular to the front surface and the back surface of the laminated plate 10, and each inclined surface. The curved surface portion is formed between the portion and the vertical portion, but the configuration may be various. For example, the grinding surface of the laminated plate may be constituted by an inclined portion that extends obliquely from the front surface and the back surface of the laminated plate 10 and a curved surface portion formed between the two inclined portions. The curved surface portion is, for example, an arc surface shape, and protrudes outward from the inclined portion in the thickness direction of the laminated plate 10.

また、上記実施例などでは、加工された積層板10の表面から斜めに延びる傾斜部と、加工された積層板10の裏面から斜めに延びる傾斜部とは、加工された積層板10の表面と裏面との間の中心面に対して対称であるが、対称でなくてもよい。   Moreover, in the said Example etc., the inclination part extended diagonally from the surface of the processed laminated board 10 and the inclination part extended diagonally from the back surface of the processed laminated board 10 are the surface of the processed laminated board 10 and Although it is symmetrical with respect to the center plane between the back surface, it may not be symmetrical.

10 積層板
12 基板
14 補強板
15 剥離膜
16 支持板
30 砥石
32 研削溝
DESCRIPTION OF SYMBOLS 10 Laminated board 12 Board | substrate 14 Reinforcement board 15 Release film 16 Support board 30 Grinding stone 32 Grinding groove

Claims (8)

基板、および該基板と剥離可能に結合した補強板を有する積層板の加工方法であって、
前記積層板の端部を砥石で研削する面取り工程を有し、
前記基板と前記補強板との界面と、前記基板の前記砥石で研削した研削面とのなす角が26°よりも大きく、30°以下である、積層板の加工方法。
A method of processing a laminated plate having a substrate and a reinforcing plate releasably coupled to the substrate,
Having a chamfering step of grinding the end of the laminate with a grindstone;
A method for processing a laminated board, wherein an angle formed by an interface between the substrate and the reinforcing plate and a ground surface of the substrate ground by the grindstone is larger than 26 ° and not larger than 30 °.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合する樹脂膜、および該樹脂膜を介して前記ガラス基板を支持するガラス板を含む、請求項1に記載の積層板の加工方法。
The substrate is a glass substrate;
The said reinforcement board is a processing method of the laminated board of Claim 1 containing the resin film couple | bonded with the said glass substrate so that peeling is possible, and the glass plate which supports the said glass substrate through this resin film.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合するガラス板を含む、請求項1に記載の積層板の加工方法。
The substrate is a glass substrate;
The said reinforcement board is a processing method of the laminated board of Claim 1 containing the glass plate couple | bonded with the said glass substrate so that peeling is possible.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合する無機膜、および該無機膜を介して前記ガラス基板を支持するガラス板を含む、請求項1に記載の積層板の加工方法。
The substrate is a glass substrate;
The said reinforcement board is a processing method of the laminated board of Claim 1 containing the inorganic film couple | bonded with the said glass substrate so that peeling is possible, and the glass plate which supports the said glass substrate through this inorganic film.
基板、および該基板と剥離可能に結合した補強板を有し、端部に砥石で研削した研削面を有する、加工された積層板であって、
前記基板と前記補強板との界面と、前記基板の前記砥石で研削した研削面とのなす角が26°よりも大きく、30°以下である、加工された積層板。
A processed laminate having a substrate and a reinforcing plate releasably coupled to the substrate, and having a grinding surface ground with a grindstone at an end,
A processed laminated plate, wherein an angle formed by an interface between the substrate and the reinforcing plate and a ground surface of the substrate ground by the grindstone is larger than 26 ° and not larger than 30 °.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合する樹脂膜、および該樹脂膜を介して前記ガラス基板を支持するガラス板を含む、請求項5に記載の積層板。
The substrate is a glass substrate;
The laminated plate according to claim 5, wherein the reinforcing plate includes a resin film that is detachably coupled to the glass substrate, and a glass plate that supports the glass substrate via the resin film.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合するガラス板を含む、請求項5に記載の積層板。
The substrate is a glass substrate;
The laminated plate according to claim 5, wherein the reinforcing plate includes a glass plate that is detachably coupled to the glass substrate.
前記基板はガラス基板であり、
前記補強板は、前記ガラス基板と剥離可能に結合する無機膜、および該無機膜を介して前記ガラス基板を支持するガラス板を含む、請求項5に記載の積層板。
The substrate is a glass substrate;
The laminated plate according to claim 5, wherein the reinforcing plate includes an inorganic film that is detachably bonded to the glass substrate, and a glass plate that supports the glass substrate via the inorganic film.
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