KR20190085920A - Laminated substrate and method of manufacturing electronic device - Google Patents

Abstract

The adhesion layer is formed by a central region in contact with the glass substrate and an end region in contact with the glass substrate in the order of T ₁ × 2/3> T ₂ "is satisfied when the thickness of the central region is T ₁ and the thickness of the end region is T ₂ , and a step is provided between the center region and the end region, Or the end face is concave.

Description

Laminated substrate and method of manufacturing electronic device

The present invention relates to a laminated substrate and a method of manufacturing an electronic device using the laminated substrate.

2. Description of the Related Art In recent years, thinner and lighter electronic devices (electronic devices) such as solar cells (PV), liquid crystal panels (LCDs), and organic EL panels (OLEDs) In response to this, thinning of the glass substrate used in these electronic devices is progressing.

On the other hand, if the strength of the glass substrate is insufficient due to the thinning, the operability of the glass substrate is lowered in the manufacturing process of the electronic device.

Recently, in order to cope with the above problem, an electronic device is manufactured on a glass substrate while a glass substrate is supported by a supporting substrate. For example, in Patent Document 1, a reinforcing plate formed by forming an adhesion layer (release film) including an inorganic film or a resin film on a supporting substrate (glass plate) is used, and a glass substrate is laminated on the adhesion layer of the reinforcing plate A laminated substrate (laminate) which is in close contact with the glass substrate of the laminated substrate to form an electronic device member on the glass substrate of the laminated substrate, and then the glass substrate is peeled off from the laminated substrate.

According to this method, even if the glass substrate is thin, the operability can be improved and appropriate positioning and the like can be performed to form the electronic device member such as wiring on the glass substrate. Further, after the predetermined process is completed, By peeling the adhesive layer and the supporting substrate, an electronic device can be manufactured using a thin glass substrate.

Japanese Patent Application Laid-Open No. 2014-114183

However, low-temperature poly-silicon (TFT) TFTs and oxide TFTs are known as thin film transistors (TFTs) capable of realizing more precise liquid crystal displays and the like.

Here, according to the studies of the present inventors, when an LTPS-TFT or an oxide TFT is manufactured by using a laminated substrate, cracks (cracks, cracks) are generated in the adhesive layer and an appropriate product can not be produced due to this crack There is a case.

The present inventors have repeatedly studied this phenomenon. As a result, the following findings were obtained.

Fig. 5A is a cross-sectional view of the end portion of the laminated substrate, Fig. 5B is an enlarged view of the region b of Fig. 5A, and Fig.

As described above, the laminated substrate 100 has a structure in which the adhesion layer 104 is formed on the supporting substrate 102, and the glass substrate 106 is laminated on the adhesion layer 104 and brought into close contact with each other.

5 (A), the laminated substrate 100 is generally formed of a supporting substrate 102, a supporting substrate 102, and a supporting substrate 103, as shown in Fig. 5 (a), in order to prevent the glass substrate 106 from being damaged, After the adhesion layer 104 and the glass substrate 106 are laminated, the end portions are chamfered.

In the laminated substrate 100, the glass substrate 106 is thinner than the supporting substrate 102 in general. Therefore, when the laminated substrate 100 is chamfered, the exposed region 104a, which is not covered with the glass substrate 106, is formed on the end portion of the adhesion layer 104 as shown in Fig. 5 (B) Occurs.

In addition, in the chamfering of the laminated substrate, as shown in Fig. 5 (A), the entire surface of the end face of the laminated substrate 100 is not curved, Only the corner portion of the end portion of the laminated substrate 10 may be chamfered as in the case of the laminated substrate 110. [

In this case also, depending on the shape of the grinding wheel, the hardness of the grinding stone, the amount of grinding of the laminated substrate, and the shape of the laminated substrate 100, the glass substrate 106 6B, which is an enlarged view of the region "b" in FIG. 6A, the adhesive layer 104 (or the end portion of the adhesive layer 104) An exposed region 104a, which is not covered with the glass substrate 106, is generated.

On the other hand, in the conventional manufacture of TFTs using amorphous silicon, the maximum temperature of the process is about 380 캜. On the other hand, in the production of the LTPS-TFT or the oxide TFT, the maximum temperature of the process is about 550 캜. Therefore, in the production of the LTPS-TFT and the oxide TFT, the adhesion layer 104 which can withstand about 550 DEG C is used.

As a result of intensive studies, the inventors of the present invention have found that, in the production of an LTPS-TFT or an oxide TFT using the laminated substrate 100, at the time of lowering the temperature after being performed at a high temperature process of about 550 캜, A crack occurs in the exposed region 104a which is not covered with the glass substrate 106 and the crack extends to a region covered with the glass substrate 106. [

When such cracks are generated in the adhesive layer 104, for example, in the subsequent wet process, the chemical liquid or the like enters the cracks and is brought into the next process or the like, which causes contamination of products and processing equipment .

In addition, cracks in the adhesive layer 104 may be judged to be foreign matter, defects, or the like due to noise during inspection of a product or the like.

The occurrence of cracks can be suppressed by making the thickness of the adhesive layer 104 thin. However, if the film thickness of the adhesion layer 104 is made thinner, dust or foreign substances adhering to the substrate or the like generated in the manufacturing process of the laminated substrate may be adhered to the laminated substrate (the supporting substrate 102 and / or the glass substrate 106) (Between the layers 104), the bubbles are easily generated. When the diameter of the bubbles is large or the number of bubbles is large, the bubbles are expanded in the heating process when the electronic device such as the LTPS-TFT is formed, and peeling occurs. In view of the above, the diameter and number of the bubbles contained in the laminated substrate need to be set to a certain value or less, and the thickness of the adhesive layer 104 is increased, thereby improving the production efficiency (product yield). In consideration of this point, the thickness of the adhesion layer 104 is preferably 500 nm or more, more preferably 2 m or more.

The object of the present invention is to provide a laminated substrate which can prevent the occurrence of cracks in the adhesion layer even when used for the production of LTPS-TFT or oxide TFT.

It is also an object of the present invention to provide a method of manufacturing an electronic device using this laminated substrate.

Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have found that the above problems can be solved by the following constitutions.

(1) a supporting substrate, an adhesive layer, and a substrate in this order,

Wherein the adhesion layer has a central region where the substrate side is in contact with the substrate and an end region which is not in contact with the substrate and the thickness of the central region is T ₁ and the thickness of the end region is T ₂ Quot; T ₁ x 2/3 > T _{2 &} quot ;, and has a step between the central region and the end region.

(2) The laminated substrate according to (1), wherein the thickness of the central region T ₁ of the adhesion layer is 100 m or less.

(3) The laminated substrate according to (1) or (2), wherein the end has a chamfered shape.

(4) a supporting substrate, an adhesive layer, and a substrate in this order,

And the end face of the adhesion layer is concave.

(5) The laminated substrate according to (4), wherein the adhesive layer has an entire surface of the substrate-side surface in contact with the substrate.

(6) The laminated substrate according to (4) or (5), wherein the end has a chamfered shape.

(7) a member forming step of forming a member for an electronic device on the substrate of the laminated substrate described in any one of (1) to (3) to obtain a laminated substrate having the member for an electronic device,

And removing the supporting substrate and the adhesion layer from the laminated substrate having the electronic device member to obtain an electronic device having the substrate and the electronic device member.

(8) a member forming step of forming a member for an electronic device on the substrate of the laminated substrate according to any one of (4) to (6) to obtain a laminated substrate having the member for an electronic device,

And removing the supporting substrate and the adhesion layer from the laminated substrate having the electronic device member to obtain an electronic device having the substrate and the electronic device member.

(9) The method for manufacturing an electronic device according to (7) or (8), wherein the electronic device member is a low-temperature polysilicon thin film transistor or an oxide thin film transistor.

According to the present invention, it is possible to provide a laminated substrate which can prevent the occurrence of cracks in the adhesion layer even when used in the production of LTPS-TFT or oxide TFT which performs a high-temperature process at about 550 ° C.

Further, according to the present invention, it is also possible to provide a method of manufacturing an electronic device using this laminated substrate.

1 (A) is a cross-sectional view conceptually showing an example of a first aspect of the laminated substrate of the present invention, and Fig. 1 (B) is an enlarged view conceptually showing a region b of Fig.
FIG. 2A is a cross-sectional view conceptually showing an example of a second aspect of the laminated substrate of the present invention, and FIG. 2B is an enlarged view conceptually showing a region b of FIG. 2A.
3 is a cross-sectional view conceptually showing the vicinity of an end portion of another example of the laminated substrate of the present invention.
4 (A) to 4 (C) are cross-sectional views conceptually showing the vicinity of an end portion of another example of the laminated substrate of the present invention.
FIG. 5A is a cross-sectional view conceptually showing an example of a conventional laminated substrate, and FIG. 5B is an enlarged view conceptually showing a region b of FIG. 5A.
Fig. 6A is a cross-sectional view conceptually showing another example of a conventional laminated substrate, and Fig. 6B is an enlarged view conceptually showing a region b in Fig. 6A.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a laminated substrate of the present invention and a method of manufacturing an electronic device will be described in detail with reference to the preferred embodiments shown in the accompanying drawings.

The present invention is not limited to the following embodiments, and various modifications and improvements can be made to the following embodiments without departing from the scope of the present invention.

Fig. 1 (A) conceptually shows a cross-sectional view of an example of the first aspect of the laminated substrate of the present invention. Fig. 1B conceptually shows an enlarged view of the area b of Fig. 1 (A).

1 (A), this laminated substrate 10 has a supporting substrate 12, a sealing layer 14, and a glass substrate 16 in this order. The adhesive layer 14 is formed such that the surface on the side of the glass substrate 16 is divided into a central region 14c in contact with the glass substrate 16 and an end region (14e) has a (a region indicated by a broken line b), when the thickness of the thickness of the central region (14c) T _1, the end region (14e) have been referred to T _2, the _{"T 1 × 2/3> T} 2 ." Satisfies. Therefore, in the laminated substrate 10, a step 14s is provided between the central region 14c and the end region 14e.

The laminated substrate 10 according to the first embodiment of the present invention has such a structure that even when used in the production of an LTPS-TFT or an oxide TFT that performs a high-temperature process at about 550 DEG C, Can be prevented.

In the illustrated example, the glass substrate 16 is used as the substrate on which the electronic device component (electronic device) is formed, but the present invention is not limited to this. That is, in the present invention, in addition to the glass substrate 16, various substrates on which electronic device parts are formed, such as a silicon substrate, a resin substrate such as a polyimide substrate, Do.

The laminated substrate 10 shown in Fig. 1A is obtained by laminating the supporting substrate 12, the adhesive layer 14 and the glass substrate 16 and cutting them into a predetermined shape if necessary, (End face) is chamfered similarly to the example shown in Fig. 5 (A).

In the laminated substrate 10 of the present invention, the main surface (maximum surface) is generally square or rectangular, and the chamfer of the end portion is usually performed on all four end surfaces as shown in the drawing. However, the present invention is not limited to this, and the chamfering of the end portions may be performed only on the three-end faces, only on the two end faces, or only on one end face, do. Further, the shape of the end of the adhesive layer 14 may be a shape having at least one step, which will be described later. However, in the present invention, it is preferable that chamfering of the end portions be performed on all four end faces, and the shape of the end portions of the adhesive layer 14 is also a shape having a step to be described later on all four end faces.

In the laminated substrate of the present invention, the shape of the main surface is not limited to a square and a rectangle. For example, various shapes such as a circle can be used. In the case of using a circular laminated substrate, the end chamfer may be part of 1/4, half, 2/3, or the like, but is preferably chamfered in the entire circumference.

The same applies to the laminated substrate of the second aspect of the present invention, in which the end face of the adhesion layer is concave, which will be described later.

In the laminated substrate 10, the two-layer portion including the supporting substrate 12 and the adhesive layer 14 is formed on the glass substrate 16 in the member forming process for forming the electronic device member constituting the LCD or the like, .

The laminated substrate 10 is used until a member forming process described later. That is, the laminated substrate 10 is used until a member for an electronic device (a member constituting an electronic device) is formed on the surface of the glass substrate 16 (main surface opposite to the adhesive layer 14). Thereafter, the laminated substrate 10 on which the electronic device member is formed is separated into the supporting substrate 12, the adhesive layer 14, and the electronic device (glass substrate 16 on which the electronic device member is formed) The supporting substrate 14 and the supporting substrate 12 do not constitute a part constituting the electronic device. A new glass substrate 16 is laminated on the adhesive layer 14 and the supporting substrate 12 and can be reused as a new laminated substrate 10. [

The adhesive layer 14 is fixed on the supporting substrate 12 and the glass substrate 16 is adhered (laminated) to the adhesive layer 14 in a peelable manner.

In the present invention, the adhesion (lamination) capable of fixing and peeling has a difference in peel strength (stress required for peeling), and fixing means that peeling strength is greater than adhesion. That is, the peel strength of the interface between the adhesion layer 14 and the support substrate 12 is greater than the peel strength between the adhesion layer 14 and the glass substrate 16. In other words, peelable adhesion means that peeling is possible, and peeling is possible without causing peeling of the fixed surface.

Specifically, the interface between the supporting substrate 12 and the adhesive layer 14 has a peeling strength x, and a peeling strength X in excess of the peeling strength x at the interface between the supporting substrate 12 and the adhesive layer 14 The supporting substrate 12 and the adhesive layer 14 are peeled off. The interface between the adhesion layer 14 and the glass substrate 16 has a peeling strength y and a stress in the peeling direction exceeding the peeling strength y is exerted on the interface between the adhesion layer 14 and the glass substrate 16 The adhesion layer 14 and the glass substrate 16 are peeled off.

The peel strength x is higher than the peel strength y in the laminated substrate 10 (including a laminate having electronic device members described later). Therefore, when stress in the direction of peeling the supporting substrate 12 and the glass substrate 16 is applied to the laminated substrate 10, the laminated substrate 10 is peeled off from the interface between the adhesive layer 14 and the glass substrate 16 And is separated into the glass substrate 16 and the supporting substrate 12 having the adhesive layer 14. [

The peel strength (x) is preferably sufficiently high as compared with the peel strength (y).

A method for increasing the adhesion of the adhesion layer 14 to the support substrate 12 is not particularly limited. For example, as described later, a curing resin containing a predetermined component is cured (cross-linked) ) To form the adhesion layer (14). The adhesion layer 14 bonded to the supporting substrate 12 with a high bonding force can be formed by the adhesive force at the time of curing.

On the other hand, it is usual that the bonding force of the adhesive layer 14 to the glass substrate 16 is lower than the bonding force that occurs when the curable resin is cured. Therefore, a curing treatment (heat treatment) is performed on the layer of the curable resin on the support substrate 12 to form the adhesion layer 14, and then the glass substrate 16 is laminated on the surface of the adhesion layer 14 , It is possible to manufacture the laminated board 10 that satisfies the desired peeling relationship.

As described above, the laminated substrate 10 has the supporting substrate 12, the adhesive layer 14, and the glass substrate 16.

≪ Support substrate &

The support substrate 12 supports the glass substrate 16 and reinforces the glass substrate 16 so that the glass substrate 16 is deformed during the manufacturing process of the electronic device member in the member forming process , Scratches, breakage, and the like. In addition, the support substrate 12 has a reduced strength of the glass substrate 16 due to its thinness, so that the operability of the glass substrate 16 itself is deteriorated. However, the support substrate 12 and the adhesion layer 14, (16) are brought into close contact with each other, the problem of deterioration in operability is solved.

As the supporting substrate 12, for example, a glass plate, a plastic plate, a metal plate (for example, SUS plate) or the like is used. It is preferable that the supporting substrate 12 is formed of a material having a smaller coefficient of linear expansion than that of the glass substrate 16 and that the supporting substrate 12 is formed of the same material as the glass substrate 16 And more preferably, the supporting substrate 12 is a glass plate. In particular, it is preferable that the supporting substrate 12 is a glass plate made of the same glass material as the glass substrate 16.

The thickness of the supporting substrate 12 may be thicker than the glass substrate 16, or may be thinner. Normally, the thickness of the supporting substrate 12 is thicker than that of the glass substrate 16. [

The thickness of the supporting substrate 12 is preferably selected based on the thickness of the glass substrate 16 and the thickness of the adhesion layer 14 and the thickness of the laminated substrate 10. [ For example, when the sum of the thickness of the glass substrate 16 and the thickness of the adhesive layer 14 is 0.1 mm, the present member forming process is designed to process a substrate having a thickness of 0.5 mm. The thickness is 0.4 mm. The thickness of the supporting substrate 12 is usually 0.1 to 5.0 mm.

In order to stably reduce the warpage of the glass substrate 16, the supporting substrate 12 is preferable from the viewpoint of controlling warpage of the laminated substrate 10 because the warp is small and the rigidity is high. When the substrate of the glass substrate 16 and the supporting substrate 12 are made of the same material, the supporting substrate 12 may have a warping shape symmetrical to the substrate of the glass substrate 16.

When the supporting substrate 12 is a glass plate, the thickness of the glass plate is preferably 0.03 mm or more for ease of handling and difficulty in breaking. Further, the thickness of the glass plate is preferably not more than 1.0 mm, because it is desirable that the rigidity of the glass plate is not broken when peeling off after formation of the electronic device member, and that a proper rigidity is required.

The difference in average linear expansion coefficient between the supporting substrate 12 and the glass substrate 16 at 25 to 300 캜 is preferably 10 ^10-7 / 캜 or lower, more preferably 3 ^10-7 / 캜 or lower , More preferably 1 x 10 < ^-7 > / DEG C or less.

When the difference in average coefficient of linear expansion between the supporting substrate 12 and the glass substrate 16 is too large, the laminated substrate 10 is excessively bent or the supporting substrate 12 and the glass substrate 16 ) May be peeled or peeled off. When the material of the supporting substrate 12 is the same as the material of the glass substrate 16, occurrence of such a problem can be suppressed.

<Adhesive Layer>

The adhesive layer 14 is formed by closely adhering the glass substrate 16 and the supporting substrate 12 until the operation of separating the supporting substrate 12 and the glass substrate 16 is performed and the glass substrate 16, Thereby preventing breakage by a separating operation. The surface (main surface) of the adhesive layer 14 on the glass substrate 16 side is peelably adhered (laminated) to the glass substrate 16 (one main surface thereof). As described above, the adhesion layer 14 is bonded to the glass substrate 16 with a weak bonding force, and the peel strength y of the interface is higher than the peeling strength y of the interface between the adhesion layer 14 and the support substrate 12 Is lower than the intensity (x).

That is, when the glass substrate 16 and the supporting substrate 12 are separated from each other, the glass substrate 16 is peeled from the interface between the glass substrate 16 and the adhesive layer 14 and peeled off from the interface between the supporting substrate 12 and the adhesive layer 14 . Therefore, the adhesion layer 14 is in close contact with the glass substrate 16, but has a surface property that allows the glass substrate 16 to be easily peeled off. That is, the adhesive layer 14 is bonded to the glass substrate 16 with a certain degree of bonding force so that the glass substrate 16 and the supporting substrate 12 are brought into close contact with each other, and when the glass substrate 16 is peeled , And the glass substrate 16 is bonded with a bonding force so as to be easily peeled without breaking.

In the present invention, the property of easily peeling off the surface of the adhesive layer 14 is called peelability. That is, the adhesive layer 14 and the glass substrate 16 are in close contact (bonded) in a state having peelability. On the other hand, the surface (main surface) of the adhesive layer 14 on the side of the supporting substrate 12 is bonded to the supporting substrate 12 (one main surface thereof) with a bonding force that is relatively difficult to peel off. That is, the supporting substrate 12 and the adhesive layer 14 are bonded with a bonding force that is relatively difficult to peel off.

The adhesive layer 14 is not particularly limited. That is, the adhesive layer 14 is a laminate substrate (glass laminate) used in the production of an electronic device, and has a known adhesion layer (adhesion layer, adhesion layer , An adhesive layer, and an adhesive layer).

Therefore, the adhesion layer 14 may be either an organic layer made of resin or the like, or an inorganic layer. Hereinafter, each case will be described in detail.

[Organic layer]

The organic layer is preferably a resin layer containing a predetermined resin. The kind of the resin forming the resin layer is not particularly limited, and examples thereof include a silicone resin, a polyimide resin, an acrylic resin, a polyolefin resin, a polyurethane resin, and a fluorine resin. Several kinds of resins may be mixed and used. Among them, a silicone resin, a polyimide resin, and a fluorine resin are preferable.

The silicone resin is a resin containing a predetermined organosiloxy unit and is usually obtained by curing a curable silicone. The curable silicone is classified into addition reaction type silicone, condensation reaction type silicone, ultraviolet ray curable type silicone and electron ray curable type silicone by its curing mechanism, but any of them can be used. Of these, addition reaction type silicones or condensation reaction type silicones are preferable.

As the addition reaction type silicone, a curable composition containing a base and a cross-linking agent and curing in the presence of a catalyst such as a platinum-based catalyst may be suitably used. The curing of the addition reaction type silicon is promoted by the heat treatment. The subject in the addition reaction type silicon is preferably an organopolysiloxane having an alkenyl group (vinyl group or the like) bonded to a silicon atom (that is, an organoalkenyl polysiloxane, preferably a straight chain), and an alkenyl group, And becomes a crosslinking point. The crosslinking agent in the addition reaction type silicone is preferably an organopolysiloxane having a hydrogen atom (hydrosilyl group) bonded to a silicon atom (that is, an organohydrogenpolysiloxane, preferably a straight chain), and a hydrosilyl group This becomes a crosslinking point.

In the addition reaction type silicone, the cross-linking points of the subject and the cross-linking agent cure by an addition reaction. The molar ratio of hydrogen atoms bonded to the silicon atom of the organohydrogenpolysiloxane with respect to the alkenyl group of the organoalkenyl polysiloxane is preferably 0.5 to 2 in view of better heat resistance derived from the crosslinked structure.

When addition reaction type silicon is used, a catalyst (in particular, a platinum group metal catalyst) may be used if necessary.

The platinum group metal catalyst (platinum group metal catalyst for hydrosilylation) is a catalyst for promoting and promoting the hydrosilylation reaction of the alkenyl group in the organoalkenyl polysiloxane and the hydrogen atom in the organohydrogenpolysiloxane. Examples of the platinum group metal catalyst include platinum, palladium, and rhodium catalysts. Particularly, it is preferable to use a platinum catalyst in view of economical efficiency and reactivity.

As the condensation reaction type silicone, a partially hydrolyzed condensation product (organopolysiloxane) obtained by partial hydrolysis and condensation reaction of a mixture of a hydrolyzable organosilane compound or a mixture thereof (monomer mixture), which is a monomer, or a mixture of a monomer or a monomer is suitably used have.

By using this condensation reaction type silicone to proceed a hydrolysis / condensation reaction (sol-gel reaction), a silicone resin can be formed.

The polyimide resin is a resin having an imide structure and is a resin obtained by reacting tetracarboxylic acids with diamines.

The structure of the polyimide resin is not particularly limited, but it is preferably composed of a repeating unit having a tetracarboxylic acid residue (X) and a diamine residue (A) represented by the following formula (1).

In the formula (1), X represents a tetracarboxylic acid residue excluding a carboxyl group from a tetracarboxylic acid, and A represents a diamine residue excluding an amino group from a diamine.

In the formula (1), X is at least one group selected from the group consisting of the following groups represented by the following formulas (X1) to (X4), represents a tetracarboxylic acid residue excluding a carboxy group from a tetracarboxylic acid desirable. Among them, from the viewpoint of excellent heat resistance of the polyimide resin, it is preferable that at least 50 mol% (preferably 80 to 100 mol%) of the total number of X is a group consisting of the groups represented by the following formulas (X1) to (X4) And more preferably at least one kind of group selected. It is more preferable that the substantially total number (100 mol%) of the total number of X is at least one group selected from the group consisting of the groups represented by the following formulas (X1) to (X4).

Further, A represents a diamine residue other than an amino group from a diamine and is preferably composed of at least one kind of group selected from the group consisting of the following groups represented by the following formulas (A1) to (A8). Among them, in the group consisting of the groups represented by the following formulas (A1) to (A8), at least 50 mol% (preferably 80 to 100 mol%) of the total number of A is preferable in view of the excellent heat resistance of the polyimide resin And more preferably at least one kind of group selected. It is more preferable that the substantially total number (100 mol%) of the total number of A is at least one group selected from the group consisting of the groups represented by the following formulas (A1) to (A8).

The thickness of the organic layer is not particularly limited, but is preferably 0.5 to 100 占 퐉, more preferably 2 to 30 占 퐉, and further preferably 4 to 20 占 퐉. When the thickness of the organic layer is within this range, the adhesion between the organic layer and the glass substrate 16 becomes sufficient.

In order to improve the flatness of the organic layer, the organic layer may contain a leveling agent. The type of the leveling agent is not particularly limited, but typical examples thereof include a fluorine leveling agent and the like.

[Inorganic layer]

The material constituting the inorganic layer is not particularly limited and preferably includes at least one selected from the group consisting of, for example, an oxide, a nitride, an oxynitride, a carbide, a carbonitride, a silicide and a fluoride. Among them, it is preferable to include an oxide because the glass substrate 16 is more excellent in peelability.

(Si), Hf, Zr, Ta, Ti, Y, Nb, or the like is used as the oxide (preferably, a metal oxide), nitride (preferably metal nitride), and oxynitride (preferably metal oxynitride) And at least one element selected from the group consisting of Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Nitrides. More specifically, a metal oxide such as silicon nitride oxide (SiN _x O _y ), titanium oxide (TiO ₂ ), indium oxide (In ₂ O ₃ ), indium cerium oxide (ICO), tin oxide (SnO ₂ ) , Gallium oxide (Ga ₂ O ₃ ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide tin oxide (ZTO) and gallium oxide zinc oxide (GZO).

Examples of the carbide (preferably metal carbide) and the carbonitride (preferably, the metal carbonitride) include carbides, carbonitrides and carbonates of one or more elements selected from Ti, W, Si, Zr, and Nb Cargo. For example, silicon carbide oxide (SiCO) and the like can be given.

As the carbide, a so-called carbon material may be used, or a carbide obtained by sintering a resin component such as a phenol resin may be used.

The silicide (preferably, metal silicide) includes, for example, a silicide of at least one element selected from Mo, W, and Cr.

Examples of fluorides (preferably metal fluorides) include fluorides of at least one element selected from Mg, Y, La, and Ba. For example, magnesium fluoride (MgF ₂ ) and the like.

The thickness of the inorganic layer is not particularly limited, but is preferably 5 to 5000 nm, more preferably 10 to 500 nm.

The surface roughness Ra (arithmetic mean roughness Ra) of the surface of the inorganic layer in contact with the glass substrate 16 is preferably 2.0 nm or less, more preferably 1.0 nm or less. The lower limit value is not particularly limited, but 0 is most preferable. When the thickness is within the above range, adhesion with the glass substrate 16 becomes better, so that the adhesion failure or the like which occurs when the glass substrate 16 is used alone can be further suppressed, and the peeling property of the glass substrate 16 is also excellent .

The surface roughness Ra is measured according to JIS B 0601 (revised in 2001).

The adhesion layer 14 may be a plasma polymerization film.

If the adhesive layer 14 is a plasma polymerization film, a material for forming a film plasma _{polymerization, CF 4, CHF 3, C} 2 H 6, C 3 H 6, C 2 H 2, CH 3 F, C 4 H 8 , etc. Fluorocarbon monomers such as methane, ethane, propane, hydrocarbons such as ethylene, propylene, acetylene, benzene and toluene, hydrogen, SF ₆ and the like. Particularly, a plasma-polymerized film composed of a fluorocarbon monomer or a hydrocarbon monomer is preferable. These may be used alone or in combination of two or more.

From the viewpoint of scratch resistance, the thickness of the plasma polymerization film is preferably 1 to 100 nm, more preferably 1 to 50 nm, and further preferably 1 to 10 nm.

In the laminated substrate 10 of the first embodiment of the present invention, the adhesive layer 14 has a central region 14c where the glass substrate 16 side is in contact with the glass substrate 16, And has an edge region 14e which is thinner than the region 14c and does not contact the glass substrate 16 and has a step 14s between the central region 14c and the end region 14e.

This point will be described later in detail.

<Glass substrate>

The glass substrate 16 is not particularly limited, and any known glass substrate used for an electronic device such as an LCD, an OLED, and a solar cell can be used.

Therefore, the glass substrate 16 may be a general one. Examples of glass substrates for display devices, such as LCDs and OLEDs, include glass plates made of alkali-free borosilicate glass, trade name "AN100" manufactured by Asahi Glass Co., Ltd., and the like. It is preferable that the glass substrate 16 is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage ratio. The coefficient of thermal expansion specified in JIS R 3102 (revised in 1995) is used as an index of the heat shrinkage ratio.

The production method of the glass substrate 16 is not particularly limited and is usually obtained by melting a glass raw material and molding the molten glass into a plate shape. Such a forming method may be a general method, and for example, a float method, a fusion method, a slot down-draw method, or the like is used.

Although the type of glass of the glass substrate 16 is not particularly limited, it is preferably an alkali-free borosilicate glass, borosilicate glass, soda lime glass, high silica glass, or other oxide-based glass mainly containing silicon oxide. As the oxide-based glass, a glass having a silicon oxide content of 40 to 90 mass% in terms of an oxide is preferable.

As the glass of the glass substrate 16, glass suitable for the kind of the electronic device member and the manufacturing process thereof is used. For example, a glass substrate for a liquid crystal panel is made of a glass (alkali-free glass) substantially free of an alkali metal component since the elution of the alkali metal component is likely to affect the liquid crystal (note that the alkali- Included). Thus, the glass of the glass substrate 16 is appropriately selected based on the kind of device to be applied and the manufacturing process thereof.

In the case of adhering another substrate to the main surface of the glass substrate 16 (principal surface opposite to the adhesive layer 14) in the production of an electronic device such as an LCD or the like, The difference in average linear expansion coefficient at 300 占 폚 is preferably 10 占^10-7 / 占 폚 or less, more preferably 3 占^10-7 / 占 폚 or less, and further preferably 1 占^10-7 / 占 폚 or less . When the difference is too large, there is a possibility that the laminated substrate 10 is vigorously bent or the supporting substrate 12 and the glass substrate 16 are peeled off during heating and cooling in the member forming process. When the material of the supporting substrate 12 is the same as the material of the glass substrate 16, occurrence of such a problem can be suppressed. Between these substrates, different layers such as an adhesive layer may be present.

The thickness of the glass substrate 16 is preferably 0.5 mm or less, more preferably 0.4 mm or less, further preferably 0.2 mm or less, and particularly preferably 0.10 mm or less, from the viewpoint of thinning and / or lightening.

By setting the thickness of the glass substrate 16 to 0.5 mm or less, it is possible to impart good flexibility to the glass substrate 16. When the thickness of the glass substrate 16 is 0.2 mm or less, the glass substrate 16 can be rolled up.

The thickness of the glass substrate 16 is preferably 0.03 mm or more for easy production of the glass substrate 16 and easy handling of the glass substrate 16. [

The area (main surface area) of the glass substrate 16 is not particularly limited, but is preferably 300 cm 2 or more from the viewpoint of productivity of the electronic device.

Further, the glass substrate 16 may be composed of two or more layers, and in this case, the material forming each layer may be the same kind of material or a different material. In this case, the "thickness of the glass substrate 16" means the total thickness of all the layers.

As described above, in the laminated substrate 10 of the first embodiment of the present invention, the adhesive layer 14 has a central region 14c in contact with the glass substrate 16, end region (14e) of the surface-direction peripheral portion did not have a (broken line b), when the thickness of the thickness of the central region (14c) T _1, the end region (14e) have been referred to T _2, "T ₁ × 2/3 &Gt; T &lt; _{2 &} gt ;. In the laminated substrate 10 of the first embodiment of the present invention, a step 14s is provided between the central region 14c and the end region 14e.

The laminated substrate 10 of the present invention has such a constitution to prevent the occurrence of cracks in the adhesive layer 14 even when used in the production of LTPS-TFT or oxide TFT which performs a high-temperature process at about 550 ° C can do.

5A, the laminated substrate 100 having the supporting substrate 102, the adhesive layer 104, and the glass substrate 106 can be prevented from being damaged by cracking or the like of the glass substrate 106 The chamfering of the end portion is performed.

The chamfering of the end portion of the laminated substrate 100 forms an exposed region 104a that is not covered with the glass substrate 106 at the end of the adhesion layer 104 as shown in Figure 5B .

The inventors of the present invention have conducted intensive studies and have found that the use of the laminated substrate 100 having such an adhesion layer 104 as the exposed region 104a not covered with the glass substrate 106 can provide a process at a high temperature A crack is generated in the exposed region 104a at the time of cooling after the process at a high temperature is performed and the crack is formed on the glass substrate 106 of the adhesion layer 104. [ As shown in Fig.

The inventors of the present invention have repeatedly studied a method for preventing such cracks. As a result, as shown in Fig. 1 (B), the thickness of the central region 14c in contact with the glass substrate 16 is not in contact with the glass substrate 16 in the surface direction peripheral portion, It has been found that cracking of the adhesive layer 14 can be prevented after the process at a high temperature is performed by reducing the thickness of the exposed end region 14e which is not covered with the glass substrate 16. [ Specifically, the central region (14c) and the thickness T ₂ of the set to change the location of the specific thickness having a step (14s) between the end region (14e), the end region (14e), as described above, the central Is less than 2/3 of the thickness T ₁ of the region 14c (&quot; T ₁ x 2/3> T ₂ &quot; is satisfied). This reduces the influence of the stress applied to the end region 14e during cooling after the heating due to the difference in thermal expansion coefficient between the supporting substrate 12 and the end region 14e of the adhesive layer 14, 10 can be prevented from cracking after the process at a high temperature.

In the first aspect of the present invention, when the thickness T ₂ of the end region 14e is 2/3 or more of the thickness T ₁ of the central region 14c (if "T ₁ × 2/3 ≦ T ₂ "), The cracks generated after the laminated substrate 10 is subjected to the process at a high temperature can not be sufficiently suppressed.

Preferably, the thickness T ₂ of the end region 14e is not more than 1/2 of the thickness T ₁ of the central region 14c, and more preferably not more than 1/10.

The thickness of the end region 14e may be a mixture of regions having different thicknesses as long as "T ₁ × 2/3> T ₂ " is satisfied in the entire region.

The length of the end region 14e in the planar direction of the laminated substrate 10, that is, the length of the region indicated by the broken line b in Fig. 1B, can be determined by the chamfer shape of the laminated substrate 10, Therefore, the thickness T ₁ of 14c), will which can take a variety of lengths, there is no particular limitation.

The thickness of the adhesion layer 14, that is, the thickness T ₁ of the central region 14c is preferably 1 to 100 占 퐉 when the adhesion layer 14 is an organic layer, and preferably 1 to 100 占 퐉 if the adhesion layer 14 is an inorganic layer 5 to 5000 nm is preferable, and in the case where the adhesion layer 14 is a plasma polymerization film, 1 to 100 nm is preferable as described above.

The thickness of the adhesion layer 14 is preferably 500 nm or more, and more preferably 2 m or more in view of being able to prevent the lowering of the production efficiency (yield) caused by the bubbles generated in the laminated substrate 10 Preferred is as described above. According to the laminated substrate 10 of the present invention, even if the adhesion layer 14 has such a thickness, the adhesion layer 14, which is formed after the process at the high temperature in the production of the LTPS-TFT or the oxide TFT, Can be suppressed.

In particular, when the adhesion layer 14 is an organic layer, the thickness T ₁ of the central region 14c is preferably 100 占 퐉 or less, more preferably 30 占 퐉 or less, and further preferably 10 占 퐉 or less.

&Lt; Method of manufacturing laminated substrate &

The manufacturing method of the laminated substrate 10 is not particularly limited, and a known method can be used.

An adhesive layer forming step of forming an adhesive layer 14 on the supporting substrate 12; a lamination step of laminating the glass substrate 16 on the adhesive layer 14 to obtain a laminated substrate; A chamfering step for chamfering and an end machining step for machining the end regions 14e are performed to manufacture the laminated substrate 10. [

[Adhesive Layer Forming Step]

The adhesion layer forming step is a step of forming the adhesion layer 14 on the supporting substrate 12. [ The method of forming the adhesive layer 14 is not particularly limited, and a known method can be used, and it differs depending on the kind of the material constituting the adhesive layer 14. [

For example, in the case where the adhesive layer 14 is an organic layer, as a method of manufacturing the organic layer, for example, a curable resin composition containing a curable resin may be applied on the support substrate 12 to cure the curable resin composition, A method of forming the adhesive layer 14 fixed on the base material 12 and a method of fixing the film-like adhesive layer 14 on the surface of the supporting base material 12 have. Among them, the coating method is preferable because the adhesion strength of the adhesive layer 14 to the supporting substrate 12 is more excellent. As a method of forming the curable resin composition layer on the surface of the supporting substrate 12 in the coating method, for example, a method of coating the curable resin composition on the surface of the supporting substrate 12 can be mentioned. Examples of the coating method include spray coating, die coating, spin coating, dip coating, roll coating, bar coating, screen printing and gravure coating.

The curing method is not particularly limited, and the optimum curing conditions are selected depending on the resin to be used. Generally, as the curing method, a heat treatment is used.

When the adhesion layer 14 is an inorganic layer, a known method can be used as a method for producing the inorganic layer. For example, a method of forming an inorganic layer composed of a predetermined component on the supporting substrate 12 by a vapor deposition method such as a vapor deposition method, a sputtering method and a CVD method can be mentioned. The inorganic layer obtained by the vapor phase film formation method is fixed on the supporting substrate 12 and the surface of the inorganic layer can be peelably adhered to the glass substrate 16.

As a method of producing an inorganic layer made of carbide (carbon material), there is a method of applying a resin composition containing a resin component such as phenol resin, for example, on a supporting substrate 12 and carbonizing it by sintering treatment .

The manufacturing conditions are appropriately selected according to the material to be used.

[Lamination step]

In the laminating step, the glass substrate 16 is laminated on the surface of the formed adhesion layer 14 obtained in the adhesion layer forming step, and the supporting substrate 12, the adhesion layer 14 and the glass substrate 16 are stacked in this order (Refer to Fig. 5 (A)).

The method of laminating the glass substrate 16 on the adhesive layer 14 is not particularly limited, and a known method can be used.

For example, a method of overlapping the glass substrate 16 on the surface of the adhesion layer 14 under atmospheric pressure can be mentioned. If necessary, the glass substrate 16 may be overlaid on the surface of the adhesive layer 14, and then the glass substrate 16 may be pressed against the adhesive layer 14 using a roll or press. The bubbles mixed in between the adhesive layer 14 and the layer of the glass substrate 16 are relatively easily removed by pressing by roll or press.

When the glass substrate 16 and the adhesive layer 14 are pressed together by a vacuum laminating method or a vacuum press method, it is preferable to suppress adhesion of bubbles and ensure good adhesion. The bubbles do not grow due to heating even when minute bubbles remain, thereby making it difficult to lead to distortion defects on the glass substrate 16.

When the glass substrate 16 is laminated, it is preferable that the surface of the glass substrate 16 contacting the adhesion layer 14 is thoroughly cleaned and laminated in an environment with high cleanliness. The higher the cleanliness, the better the flatness of the glass substrate 16 is.

Further, after the glass substrate 16 is laminated, a pre-annealing treatment (heat treatment) may be performed if necessary. By performing the pre-annealing treatment, the adhesion of the laminated glass substrate 16 to the adhesive layer 14 can be improved, the peel strength (y) can be improved, and the productivity of the electronic device can be improved.

Further, after the glass substrate 16 is laminated, a cutting step for cutting the laminated substrate to a predetermined size may be performed as necessary.

[Chamfering process]

The chamfering step is a step of chamfering the end portion of the laminated substrate in which the glass substrate 16 is laminated (see Fig. 5 (A)).

The chamfering method of the end portion of the laminated substrate is not particularly limited, and a known method such as a method using a chamfering machine for a glass substrate can be used.

[End machining process]

As described above, by chamfering the end portion of the laminated substrate in which the glass substrate 16 is laminated, the end portions (end portions in the planar direction) of the adhesion layer 14 are covered with the exposed regions (See Fig. 5 (B)).

In the end machining step, the end portion of the exposed adhesive layer 14 is processed so that the thickness of the end portion 14e in the state of having the step 14s between the central region 14c and the end region 14e T ₂ is less than 2/3 of the thickness T ₁ of the central region 14c (the thickness satisfying "T ₁ × 2/3> T ₂ "), thereby forming the laminated substrate 10 of the present invention .

The method of forming the central region 14c and the end region 14e having step differences by processing the exposed region of the end portion of the adhesion layer 14 not covered with the glass substrate 16 is not particularly limited, Can be used. As an example, there are exemplified a mechanical machining method using a grinder or the like, an anisotropic etching machining method using an etching gas, and the like.

Further, the end machining step may be performed simultaneously with the chamfering process by adjusting the shape of the grinding wheel, adjusting the grinding position, or the like.

In the case where the adhesion layer 14 is formed of an inorganic layer, in particular, in the adhesion layer formation step, the thickness T ₂ of the end region 14 e on the entire surface of the supporting substrate 12 And the adhesion layer 14 is formed only in the central region 14c so as to have the step 14s in advance and also to have the thickness of the end region 14e the T _2, by forming a close contact layer 14 is less than 2/3 of the thickness T ₁ of the center region (14c), may be performed for the adhesive layer formation step and processing step ends at the same time. This method is effective in the production of a laminated substrate or the like shown in Figs. 4 (A) and 4 (C) to be described later.

Fig. 2 (A) conceptually shows a cross-sectional view of an example of the second aspect of the laminated substrate of the present invention. FIG. 2B conceptually shows an enlarged view of the area b of FIG. 2A.

The laminated substrate 20 shown in Figs. 2A and 2B is different from the laminated substrate 10 shown in Fig. 1A or the like except that the shape of the adhesive layer is different, And therefore, the same components are denoted by the same reference numerals, and the following description mainly refers to different parts.

As shown in Fig. 2A, this laminated substrate 20 also has a supporting substrate 12, a sealing layer 24, and a glass substrate 16 in this order. In the adhesive layer 24, the end face 24a in the planar direction is concave (concave).

The laminated substrate 20 according to the second embodiment of the present invention has such a configuration that the LTPS-TFT or the oxide TFT (TFT) which performs a high-temperature process at about 550 DEG C, like the laminated substrate 10 of the first embodiment, It is possible to prevent the occurrence of cracks in the adhesive layer 14.

In the laminated substrate 20, as described above, the supporting substrate 12 and the glass substrate 16 are the same as the above-described laminated substrate 10 shown in Fig. 1A and the like.

The material and thickness of the adhesive layer 24 are the same as those of the adhesive layer 14 of the above-described laminated substrate 10, except that the shapes of the end faces are different.

2 (B), the adhesive layer 24 of the laminated substrate 20 according to the second embodiment of the present invention has the shape of the end face in the planar direction of the concave (concave) Respectively. The adhesive layer 24 in the illustrated example is a preferred embodiment in which the entire surface of the glass substrate 16 side (the entire surface on the upper side in the figure) is in contact with the glass substrate 16. [

The laminated substrate 20 is heated by the difference in thermal expansion coefficient between the supporting substrate 12 and the adhesive layer 14 like the above-described laminated substrate 10 because the end face of the adhesive layer 24 is concave, It is possible to prevent the occurrence of cracks in the adhesive layer 14 after the laminated substrate 10 has undergone the process at a high temperature by reducing the influence of the stress applied to the exposed region of the adhesive layer 14 at the time of subsequent cooling can do.

If the shape of the end face 24a of the adhesive layer 24 is a concave shape, various shapes are available. Therefore, the end face 24a may be a curved concave shape, a concave shape of a polygonal shape, or a concave shape of a combination of a curved surface and a polygon. The curved surface forming the concave end surface 24a may be partially different in curvature, and the polygon may be a regular polygon or a polygon having a different vertex angle.

It is preferable that the end face 24a of the adhesive layer 24 is concave throughout the entire thickness direction.

Such a laminated substrate 20 can be manufactured in the same manner as the laminated substrate 10 described above, except that the end processing step for processing the exposed region of the adhesion layer 24 is different.

The end processing step of the laminated substrate 20 is a step of forming an adhesion layer having an exposed region (see Fig. 5 (B)) which is not covered with the glass substrate 16 at the end portion It is possible to use a known method in which the end surface 24a is a concave adhesion layer 24.

As an example, an exposed region that is not covered with the glass substrate 16 is processed by wet etching using an etchant and the end portion of the adhesive layer is processed so that the end face 24a forms the concave adhesion layer 24 A method of forming the film is exemplified. In the case where the adhesive layer is formed of a thermally decomposable material, the end of the adhesive layer is processed by chamfering the laminated substrate after heat treatment to form the concave adhesive layer 24 having the concave surface 24a Is exemplified. Further, by adjusting the shape of the grinding wheel, adjusting the grinding position, or the like, the end face machining step may be performed simultaneously with the chamfering step to form the concave adhesion layer 24 having the concave end face 24a.

The laminated substrate of the present invention is not limited to the example described above and may have a central region contacting the glass substrate and an end region not contacting the glass substrate and having a step between the central region and the end region, If the thickness T ₁ and the thickness T ₂ of the end region satisfy "T ₁ × 2/3> T ₂ " and the structure in which the end face of the adhesion layer is concave, Available.

Fig. 3 shows an example thereof. 3 is an enlarged schematic view of the end portion of the laminated substrate similar to Fig. 1 (B) or the like. This point also applies to FIGS. 4 (A) to 4 (C) to be described later.

The laminated substrate shown in Fig. 3 has a concave end face 26a and also has a central region 26c which is in contact with the glass substrate 16 and an end region 26e which is not in contact with the glass substrate 16. [ And an adhesive layer 26 having an extremely thin thickness of the end region 26e as compared with the central region 26c. That is, the present invention can be applied to a configuration having an adhesion layer as a combination of the adhesion layer 14 shown in Fig. 1 (B) and the adhesion layer 24 shown in Fig. 2 (B) Do.

Also in this case, it is preferable that the thickness T ₂ of the central zone (26c) a thickness T ₁ and the end region (26e) of which satisfies the _{"T 1 × 2/3> T} 2 ".

1 (A), 1 (B), 2 (A) and 2 (B) and 3 show examples in which the entire end face of the laminated substrate is chamfered in a curved shape But the configuration of these adhesion layers can be used also in a laminated substrate in which only the corners of the end portions are chamfered as shown in Fig. 6A or the like.

Further, the laminated substrate of the present invention is a laminated substrate in which, as in the laminated substrates shown in Figs. 1A and 1B, Figs. 2A and 2B, and Fig. 3, The present invention is not limited to a configuration in which chamfering is performed.

The glass substrate 16 is smaller than the supporting substrate 12 and the adhesive layer 30 is in contact with the glass substrate 16 as in the case of a laminated substrate conceptually showing a cross- And has an exposed end region 30e that does not contact the glass substrate 16 and also has a step 30s between the central region 30c and the end region 30e, , the thickness T ₂ of the central area and the thickness T ₁ of the end region (30c) (30e) configured to satisfy the _{"T 1 × 2/3> T} 2 " and the like.

As another example, the glass substrate 16 is smaller than the supporting substrate 12 and the adhesive layer 30 is provided on the glass substrate 16 side, as in the case of a laminated substrate conceptually showing the cross- A configuration in which the entire surface of the surface is in contact with the glass substrate 16 and the end surface 32a of the adhesion layer 30 is recessed over the entire thickness direction is also usable.

As another example, the size of the glass substrate 16 and the supporting substrate 12 is the same as that of the laminated substrate conceptually showing the sectional view of the end portion in Fig. 4 (C) A central region 34c in contact with the substrate 16 and an end region 34e covered by the glass substrate 16 that does not contact the glass substrate 16 and also has a central region 34c and an end region 34e ) have a step (34s) in between, and the thickness T ₂ of the central region (having a thickness T ₁ and the end region of 34c) (34e) configured to satisfy the _{"T 1 × 2/3> T} 2 " it is also, of Available.

These laminated substrates can also be manufactured by a known method. For example, it may be manufactured by a method similar to the above-described laminated substrate shown in Figs. 1A and 1B and Figs. 2A and 2B.

Such a laminated substrate of the present invention can be used for various purposes. As an example, an application for manufacturing an electronic device such as a display device panel, a PV, a thin film secondary battery, a semiconductor wafer on which a circuit is formed, and the like can be given.

Here, the display panel includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel and the like. The LCD includes TN type, STN type, FE type, TFT type, MIM type, IPS type, VA type and the like. The present invention can basically be applied to any of passive-drive type and active-drive type display devices.

A manufacturing method of an electronic device of the present invention is to manufacture an electronic device including a glass substrate and a member for an electronic device by using the laminated substrate of the present invention.

More specifically, the electronic device member is formed on the glass substrate of the laminated substrate to manufacture the laminated substrate having the electronic device member, and the interface between the laminated substrate having the obtained electronic device member and the glass substrate side of the adhesive layer is peeled off The glass substrate is peeled off to separate the electronic device and the supporting substrate having the adhesive layer.

The step of forming the electronic device member on the glass substrate of the laminated substrate and manufacturing the laminated substrate having the electronic device member is the member forming step in the manufacturing method of the present invention.

The step of separating the glass substrate from the laminated substrate having the adhesive layer for the electronic device and peeling off the interface at the glass substrate side of the adhesive layer to separate the electronic device and the adhesive layer and the supporting substrate is the same as the manufacturing method of the present invention .

Hereinafter, an example of a method for manufacturing an electronic device of the present invention will be described by taking the case of using the laminated substrate 10 as an example.

&Lt; Member forming process &

The member forming step is a step of forming an electronic device member on the glass substrate 16 (the surface opposite to the adhesive layer 14 of the glass substrate 16 (on the glass substrate 16)) of the laminated substrate 10 to be.

The member for an electronic device is a member that is formed on the glass substrate 16 of the laminated substrate 10 and constitutes at least a part of the electronic device.

Specifically, as the member for an electronic device, a member used for a display device panel, a solar cell, a thin film secondary battery, or an electronic part such as a semiconductor wafer on which a circuit is formed on a surface (for example, Member for a battery, member for a thin film secondary battery, circuit for an electronic part).

For the member for the electronic device, a known member according to the electronic device to be manufactured is available. For example, as a member for a solar cell, in a thin film silicon type, a transparent electrode such as tin oxide of a positive electrode, a silicon layer represented by a p layer / an i layer / an n layer and a metal of a negative electrode, , Dye-sensitized type, quantum dot type, and the like. Examples of members for a thin film secondary battery include a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a current collecting layer, a resin as a sealing layer and the like in the lithium ion type. , Nickel-nickel-plated, polymer-type, ceramics-electrolyte-type, and the like.

In the case of a solid-state image pickup device such as a CCD or a CMOS, as the circuit member for an electronic part, a metal of a conductive portion, silicon oxide and silicon nitride of an insulating portion can be mentioned.

As the display device member, various members constituting the OLED and the TFT-LCD can be exemplified. These will be described later in detail.

In addition, various sensors corresponding to pressure sensors and acceleration sensors, various members corresponding to rigid printed boards, flexible printed boards, rigid flexible printed boards, and the like can be given.

In the member forming process of the present invention, the method for forming the electronic device member is not particularly limited, and the electronic device may be formed on the glass substrate 16 of the laminate substrate 10 by a known method, It is sufficient to form a usable member.

For example, in the case of manufacturing an OLED, the member forming step is a step of forming a transparent electrode in order to form an organic EL structure on the glass substrate 16 of the laminated substrate 10, Such as a step of depositing a hole injection layer, a hole transporting layer, a light emitting layer and an electron transporting layer, a step of forming a back electrode, and a step of sealing using a sealing plate.

The forming step and the treating step of these layers may be concretely performed by, for example, a film forming treatment, a vapor deposition treatment, an adhesion treatment of a sealing plate, or the like.

Further, for example, in the case of manufacturing a TFT-LCD, the member forming step has a TFT forming step, a CF forming step, and a bonding step.

The TFT forming step is a step of forming a pattern on a metal film and a metal oxide film formed on a glass substrate 16 of a laminated substrate 10 by a general film forming method such as a CVD method or a sputtering method using a resist solution, (TFT). The CF forming step is a step of forming a color filter CF on the glass substrate 16 of the laminated substrate 10 different from the TFT forming step by using a resist solution for pattern formation. The bonding step is a step of laminating the TFT-equipped laminated substrate 10, which is the laminated substrate for electronic device members obtained in the TFT forming step, and the CF-equipped laminated substrate 10, which is the laminated substrate for electronic devices, obtained in the CF forming step, .

Here, in the present invention, the laminated substrate 10 is formed such that the adhesive layer 14 has a central region 14c in contact with the glass substrate 16 and an end region 14e in contact with the glass substrate 16, to have, also, has a step difference between the central area (14c) and the end region (14e), and the thickness T ₂ of the central zone (14c) a thickness T ₁ and the end region of (14e) "T ₁ × 2 / 3 &gt; T _{2 &} quot ;, and it is possible to prevent the occurrence of cracks in the adhesive layer 14 even after a process at a high temperature of about 550 ° C.

Therefore, as the TFT formed in the TFT formation step, an LTPS-TFT and an oxide TFT in which the maximum temperature of the process is about 550 DEG C are suitably exemplified. Regarding this point, the same applies to the case of forming a TFT as a switching element in the manufacture of an OLED. The same applies to the case where the electronic device is manufactured by the manufacturing method of the present invention using the laminated substrate of the second aspect of the present invention in which the end face of the adhesive layer is concave.

In the TFT forming step and the CF forming step, a TFT or CF may be formed on the glass substrate 16 by using a known photolithography technique or an etching technique. At this time, a resist solution is used as a coating liquid for pattern formation.

In the case of manufacturing a TFT-LCD, in the member forming step, the glass substrate 16 may be cleaned as needed before forming the TFT or CF. As the cleaning method, well-known dry cleaning or wet cleaning can be used.

In the bonding step, a TFT forming surface of the TFT-equipped laminated substrate 10 and a CF color filter forming surface of the CF-equipped laminated substrate 10 are opposed to each other and a sealing agent (for example, a UV-curable sealing agent for forming a cell) . Thereafter, a liquid crystal material is injected into the cell formed of the TFT-equipped laminated substrate 10 and the CF-equipped laminated substrate 10. As a method of injecting the liquid crystal material, for example, there are a reduced pressure injection method and a dropping injection method.

<Separation Process>

The separation step is a step of separating the adhesive layer 14 and the glass substrate 16 from the laminated substrate for an electronic device obtained in the member formation step so that the glass substrate 16 (Electronic device), the adhesion layer 14, and the supporting substrate 12 to obtain an electronic device.

The method of peeling the glass substrate 16 and the adhesive layer 14 and the supporting substrate 12 is not particularly limited.

As an example, a method of inserting a sharp blade-like object into the interface between the glass substrate 16 and the adhesive layer 14, giving a moment of peeling, spraying a mixed fluid of water and compressed air, and peeling.

Preferably, the support substrate 12 of the laminated substrate with an electronic device member is arranged on the base so that the upper side of the support substrate 12 and the glass substrate 16 (the side of the electronic device) are downward, In this state, first, the cutter enters the interface between the glass substrate 16 and the adhesive layer 14 by vacuum suction (in the case where the supporting substrate is laminated on both surfaces thereof). Thereafter, the side of the supporting substrate 12 is adsorbed by the plurality of vacuum adsorption pads, and the vacuum adsorption pad is raised in order from the vicinity of the place where the cutlery is inserted. An air layer is formed on the interface between the adhesion layer 14 and the glass substrate 16 and on the cohesive failure surface of the adhesion layer 14 and the air layer is diffused to the entire surface of the interface or the cohesive failure surface, ) Can easily be peeled off.

A laser may be used for the formation or peeling of the peeling mechanism.

The adhesive layer 14 and the supporting substrate 12 separated from the glass substrate 16 can be laminated with the new glass substrate 16 to produce the laminated substrate 10 of the present invention.

When the glass substrate 16 on which the electronic device member is formed is separated from the laminated substrate for an electronic device member, the adhesion and humidity of the ionizer are controlled so that a piece of the adhesive layer 14 is transferred to the electronic device It is possible to suppress electrostatic adsorption.

In the manufacturing method of the present invention, the electronic device member formed in the member forming step may be all of the members finally formed on the glass substrate 16 (hereinafter referred to as &quot; all members &quot;), (Hereinafter referred to as &quot; partial members &quot;).

In the case of forming the entire member in the member forming process, for example, a laminated substrate 10 in which an entire member is formed on a glass substrate 16 is manufactured, and then the entire member is formed on the glass substrate 16 The adhesive layer 14 and the supporting substrate 12 are peeled from the laminated substrate 10 to produce an electronic device. The two laminated substrates 10 having the entire members formed on the glass substrate 16 are then combined and then the adhesive layer 14 and the supporting substrate 12 are peeled off from the two laminated substrates 10, The glass substrate 16 on which the electronic device member is formed may be used. Another electronic device member may be formed on the peeling surface (the surface in contact with the adhesive layer 14) of the glass substrate 16 on which the entire member is formed, which is peeled off from the adhesive layer 14.

On the other hand, when forming the partial member in the member forming step, for example, a laminated substrate 10 having a partial member formed on the glass substrate 16 is manufactured, and then a partial member is formed on the glass substrate 16 The adhesive layer 14 and the supporting substrate 12 are peeled off from the laminated substrate 10 to form the glass substrate 16 on which the partial member is formed. The glass substrate 16 on which the partial member is formed may be used as the glass substrate 16 on which the entire member is formed in a subsequent step.

The above-described electronic device manufacturing method is an example in which the first embodiment of the laminated board of the present invention is used as the laminated board 10, but when the laminated board 20 or the like which is the second aspect of the laminated board of the present invention is used The electronic device can be similarly manufactured.

Although the laminated substrate of the present invention and the method of manufacturing the electronic device have been described in detail above, the present invention is not limited to the above example, and various improvements and modifications may be made within the scope of the present invention. Of course it is.

Example

Hereinafter, the present invention will be described in detail by way of examples and the like, but the present invention is not limited by these examples.

&Lt; Example 1 >

[Synthesis of resin]

179 g of triethoxymethylsilane, 300 g of toluene and 5 g of acetic acid were added to a 1-liter flask, which was then stirred at 25 DEG C for 20 minutes and then heated to 60 DEG C for reaction for 12 hours.

After cooling to 25 캜, 300 g of water was added and the reaction tank solution was washed three times. Toluene was distilled off from the reaction mixture by distillation under reduced pressure to obtain a slurry state, and dried overnight in a vacuum drier to obtain a resin 1 as a white organopolysiloxane compound.

[Preparation of Coating Solution]

20 g of Resin 1, 0.6 g of aluminum (III) acetylacetonate (manufactured by Tokyo Chemical Industry Co., Ltd.) as a curing catalyst, 30 g of propylene glycol 1-monomethyl ether 2-acetate (manufactured by Kanto Kagaku Kabushiki Kaisha) And the mixture was filtered through a syringe filter having a pore diameter of 0.45 mu m to obtain a coating solution 1.

[Fabrication of laminated substrate]

As a supporting substrate, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a thickness of 200 mm and a thickness of 0.5 mm was prepared.

Coating solution 1 was applied to one side of the supporting substrate by spin coating and heated at 100 占 폚 for 10 minutes using a hot plate. Thereafter, the substrate was heated in an oven at 250 캜 for 30 minutes using an oven to form an adhesive layer including a silicon resin layer having a thickness of 6 탆 on one side of the supporting substrate 12 ).

On the other hand, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a thickness of 200 mm and a thickness of 0.2 mm was prepared as a glass substrate.

The glass substrate was placed on the adhesion layer (silicon resin layer) and bonded by a bonding apparatus to prepare a laminated substrate (lamination step).

The four sides of the obtained laminated substrate were cut by 20 mm from the base, and then the end portions were chamfered using the chamfering machine for glass substrate (chamfering step, see Fig. 5 (A)). The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

The end of the prepared laminated substrate was immersed in a fluoric acid etching solution to etch the adhesion layer (silicon resin layer) at the end of the laminated substrate (end machining step) to produce a laminated substrate.

The cross section of the substrate end was observed with a scanning electron microscope, and the adhesion layer was etched so that the end face of the adhesion layer became a concave shape as shown in Fig. 2 (B).

&Lt; Example 2 >

[Synthesis of resin]

150 g of triethoxymethylsilane, 21 g of diethoxydimethylsilane, 250 g of toluene and 7 g of acetic acid were added to a 1-liter flask, and the mixture was stirred at 25 DEG C for 20 minutes and then heated to 100 DEG C for reaction for 12 hours.

After cooling to 25 캜, 300 g of water was added and the reaction tank solution was washed three times. Toluene was distilled off from the reaction mixture by distillation under reduced pressure to obtain a slurry state, followed by drying overnight in a vacuum drier to obtain a resin 2 as a white organopolysiloxane compound. Resin 2 had the number of T units: number of D units = 86: 14 (molar ratio).

[Adjustment of Coating Solution]

A coating solution (coating solution 2) was prepared in the same manner as in Example 1 except that Resin 2 was used.

[Fabrication of laminated substrate]

Except for using the coating solution 2, a laminate substrate was prepared by forming an adhesion layer, laminating a glass substrate, and chamfering in the same manner as in Example 1. The thickness of the silicone resin layer as the adhesion layer was 6 mu m.

The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

An end of the prepared laminated substrate was immersed in a silicon dissolver KSR-2 (manufactured by Kanto Kagaku Kabushiki Kaisha), and the adhesion layer (silicon resin layer) at the end of the laminated substrate was wet-etched to produce a laminated substrate.

The cross-section of the end of the substrate was observed with a scanning electron microscope, and the adhesion layer was etched so that the end face of the adhesion layer became a concave shape as shown in Fig. 2 (B).

&Lt; Example 3 >

[Synthesis of resin]

179 g of triethoxymethylsilane, 300 g of toluene and 5 g of acetic acid were added to a 1-liter flask, which was stirred at 25 캜 for 20 minutes, and then heated to 60 캜 for reaction for 12 hours.

After cooling to 25 캜, 300 g of water was added and the reaction tank solution was washed three times. To the reaction tank was added 70 g of chlorotrimethylsilane, and the mixture was stirred at 25 DEG C for 20 minutes and then heated to 50 DEG C for reaction for 12 hours. After cooling to 25 캜, 300 g of water was added and the reaction tank solution was washed three times. Toluene was distilled off from the reaction mixture by distillation under reduced pressure to obtain a slurry state, and dried overnight in a vacuum drier to obtain a resin 3 as a white organopolysiloxane compound. Resin 3 had the number of T units: number of M units = 87: 13 (molar ratio).

[Adjustment of Coating Solution]

A coating solution (coating solution 3) was prepared in the same manner as in Example 1 except that Resin 3 was used.

[Fabrication of laminated substrate]

Except for using the coating solution 3, the adhesion layer, the glass substrate, and the chamfer were formed in the same manner as in Example 1 to produce a laminated substrate. The thickness of the silicone resin layer as the adhesion layer was 10 mu m.

The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

Using the oven, the prepared laminated substrate was heated at 400 占 폚 for 60 minutes in the atmosphere to thermally decompose the adhesion layer (silicone resin layer) at the ends to prepare a laminated substrate.

The cross section of the substrate end was observed with a scanning electron microscope, and the adhesion layer at the end of the laminate substrate was thermally decomposed to form a concave end face as shown in Fig. 2 (B).

<Example 4>

[Fabrication of laminated substrate]

As a supporting substrate, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a size of 100 mm x 100 mm and a thickness of 0.5 mm was prepared.

On one side of the supporting substrate, an adhesion layer including an ITO layer having a thickness of 500 nm was formed by magnetron sputtering.

On the other hand, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a size of 100 mm × 100 mm and a thickness of 0.2 mm was prepared as a glass substrate.

This glass substrate was placed on a close contact layer (ITO layer) and bonded with a bonding apparatus to prepare a laminated substrate.

The four sides of the obtained laminated substrate were cut out by 10 mm from the base, and then the end portions were chamfered using a glass substrate chamfering machine.

The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

The end of the prepared laminated substrate was immersed in an etching solution containing hydrochloric acid and ferric chloride, and the adhesion layer (ITO layer) at the end of the laminated substrate was etched to produce a laminated substrate.

The cross section of the substrate end was observed with a scanning electron microscope, and the adhesion layer at the end of the laminate substrate was etched, and the end face of the adhesion layer became a concave shape as shown in Fig. 2 (B).

&Lt; Example 5 >

[Fabrication of laminated substrate]

A laminated substrate in which a supporting substrate (glass plate), an adhesion layer (ITO layer) and a glass substrate (glass plate) were laminated and an ITO layer was used as an adhesive layer was prepared and the end portion of the substrate was chamfered.

The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

The prepared laminated substrate was placed in a dry etching apparatus, and an adhesion layer (ITO layer) at an end of the laminated substrate was etched using argon and carbon tetrachloride to prepare a laminated substrate.

A cross section of the end portion of the laminated substrate was observed with a scanning electron microscope, and the contact layer not in contact with the glass substrate was etched, and the end portion of the contact layer had a stepped shape as shown in Fig. 1 (B) . The film thickness of the etched region (end region) was 50 nm.

&Lt; Example 6 >

[Fabrication of laminated substrate]

As a supporting substrate, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a size of 100 mm x 100 mm and a thickness of 0.5 mm was prepared.

On one side of the supporting substrate, an adhesion layer made of an ICO layer having a thickness of 500 nm was formed by magnetron sputtering. In this magnetron sputtering method, indium oxide and cerium oxide were mixed and sintered as a target material, and the content of indium oxide and cerium oxide was 80 mass% and the content of indium oxide and cerium oxide was 80 mass% And 20% by mass of cerium. The content of the cerium element in the obtained inorganic layer was 12 at% with respect to the total metal elements in the inorganic layer.

On the other hand, a glass plate (AN100, manufactured by Asahi Glass Co., Ltd.) having a size of 100 mm × 100 mm and a thickness of 0.2 mm was prepared as a glass substrate.

The glass substrate was placed on the adhesion layer (ICO layer) and bonded with a bonding apparatus to prepare a laminated substrate. The four sides of the obtained laminated substrate were cut out by 10 mm from the base, and then the end portions were chamfered using a glass substrate chamfering machine.

The cross section of the end portion of the chamfered laminated substrate was observed with a scanning electron microscope. As shown in Fig. 5 (B), the portion where the adhesion layer does not contact the glass substrate (exposed region 104a) ) Was obtained.

[Processing of the end of the adhesion layer]

The prepared laminated substrate was placed in a dry etching apparatus, and an adhesion layer (ITO layer) at an end of the laminated substrate was etched using argon and carbon tetrachloride to prepare a laminated substrate.

A cross section of the end portion of the laminated substrate was observed with a scanning electron microscope. The adhesion layer not in contact with the glass substrate was etched, and the end portion of the adhesion layer had a stepped shape as shown in Fig. 1 (B). The film thickness of the etched region (end region) was 50 nm.

&Lt; Comparative Example 1 &

Comparative Example 1 in which the processing of the end portion of the adhesion layer (wet etching) was not performed in the laminated substrate of Example 1 was performed. The adhesion layer of the laminated substrate is a silicon resin layer.

That is, this laminated substrate is a laminated substrate having an end portion as shown in Fig. 5 (B) in which the portion of the adhesive layer not exposed to the glass substrate (exposed region 104a) exists.

&Lt; Comparative Example 2 &

In the laminated substrate of Example 2, Comparative Example 2 in which the processing of the end portion of the adhesion layer (wet etching) was not performed. The adhesion layer of the laminated substrate is a silicon resin layer.

That is, this laminated substrate is a laminated substrate having an end portion as shown in Fig. 5 (B) in which the portion of the adhesive layer not exposed to the glass substrate (exposed region 104a) exists.

&Lt; Comparative Example 3 &

In the laminated substrate of Example 3, Comparative Example 3 in which the processing of the end of the adhesion layer (pyrolysis treatment) was not carried out was made. The adhesion layer of the laminated substrate is a silicon resin layer.

That is, this laminated substrate is a laminated substrate having an end portion as shown in Fig. 5 (B) in which the portion of the adhesive layer not exposed to the glass substrate (exposed region 104a) exists.

&Lt; Comparative Example 4 &

In the laminated substrate of Example 4, Comparative Example 4 in which the processing of the end portion of the adhesion layer (wet etching) was not performed. The adhesion layer of the laminated substrate is an ITO layer.

That is, this laminated substrate is a laminated substrate having an end portion as shown in Fig. 5 (B) in which the portion of the adhesive layer not exposed to the glass substrate (exposed region 104a) exists.

&Lt; Comparative Example 5 &

In the laminated substrate of Example 6, Comparative Example 5 in which the processing of the end portion of the adhesion layer (dry etching) was not performed was performed. The adhesion layer of the laminated substrate is an ICO layer.

That is, this laminated substrate is a laminated substrate having an end portion as shown in Fig. 5 (B) in which the portion of the adhesive layer not exposed to the glass substrate (exposed region 104a) exists.

&Lt; Evaluation of heat resistance &

The laminated substrates of the produced Examples 1 to 6 and Comparative Examples 1 to 5 were heated under nitrogen at about 550 DEG C for 10 minutes. After heating, the mixture was cooled to room temperature and allowed to stand at room temperature for one week.

Thereafter, the occurrence of cracks in the adhesive layer was confirmed using an optical microscope.

As a result, in the laminated boards of Examples 1 to 6, no cracks longer than 1 mm in length were generated in the adhesive layer.

On the other hand, in the laminated substrates of Comparative Examples 1 to 5, cracks having a length of 1 mm or more were formed in the adhesive layer.

The results are shown in the following table. In the following table, the results of the heat resistance evaluation show "OK" when no cracks having a length of 1 mm or more are formed in the adhesive layer, and "NG" when cracks having a length of 1 mm or more are formed in the adhesive layer.

From the above results, the effect of the present invention is clear.

This application is based upon and claims the benefit of priority from U.S. Patent Application No. 2016-222077, filed on November 15, 2016, with the entire contents of Patent Application No. 2016-222077 filed in the present application.

10, 20, 100: laminated substrate
12, 102: support substrate
14, 24, 30, 32, 34, 104: adhesion layer
14c, 26c, 30c, and 34c:
14e, 26e, 30e, 34e:
14s, 30s, 34s: step
16, 106: glass substrate
24a, 26a, 32a: end faces
104a: Exposed area

Claims (9)

A support substrate, an adhesion layer, and a substrate in this order,
Wherein the adhesion layer has a central region where the substrate side is in contact with the substrate and an end region which is not in contact with the substrate and the thickness of the central region is T ₁ and the thickness of the end region is T ₂ Quot; T ₁ x 2/3 > T _{2 &} quot ;, and has a step between the central region and the end region. The method according to claim 1,
And the thickness of the central region T1 of the adhesion layer is not more than 100 mu m. 3. The method according to claim 1 or 2,
Wherein the end portion has a chamfered shape. A support substrate, an adhesion layer, and a substrate in this order,
And the end face of the adhesion layer is concave. 5. The method of claim 4,
Wherein the adhesive layer has an entire surface of the substrate-side surface in contact with the substrate. The method according to claim 4 or 5,
Wherein the end portion has a chamfered shape. A member forming step of forming a member for an electronic device on the substrate of the laminated substrate according to any one of claims 1 to 3 to obtain a laminated substrate having the member for an electronic device,
And removing the supporting substrate and the adhesive layer from the laminated substrate having the electronic device member to obtain the electronic device with the substrate and the electronic device member. A member forming step of forming a member for an electronic device on the substrate of the laminated substrate according to any one of claims 4 to 6 to obtain a laminated substrate having the member for an electronic device,
And removing the supporting substrate and the adhesive layer from the laminated substrate having the electronic device member to obtain the electronic device with the substrate and the electronic device member. 9. The method according to claim 7 or 8,
Wherein the electronic device member is a low-temperature polysilicon thin film transistor or an oxide thin film transistor.

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