JP2014110277A5 - - Google Patents

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JP2014110277A5
JP2014110277A5 JP2012262817A JP2012262817A JP2014110277A5 JP 2014110277 A5 JP2014110277 A5 JP 2014110277A5 JP 2012262817 A JP2012262817 A JP 2012262817A JP 2012262817 A JP2012262817 A JP 2012262817A JP 2014110277 A5 JP2014110277 A5 JP 2014110277A5
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JP2012262817A
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JP2014110277A (ja
JP5943819B2 (ja
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JP2012262817A 2012-11-30 2012-11-30 半導体素子、半導体装置 Active JP5943819B2 (ja)

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Application Number Priority Date Filing Date Title
JP2012262817A JP5943819B2 (ja) 2012-11-30 2012-11-30 半導体素子、半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012262817A JP5943819B2 (ja) 2012-11-30 2012-11-30 半導体素子、半導体装置

Publications (3)

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JP2014110277A JP2014110277A (ja) 2014-06-12
JP2014110277A5 true JP2014110277A5 (https=) 2014-11-20
JP5943819B2 JP5943819B2 (ja) 2016-07-05

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JP2012262817A Active JP5943819B2 (ja) 2012-11-30 2012-11-30 半導体素子、半導体装置

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JP (1) JP5943819B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6457663B2 (ja) * 2016-01-05 2019-01-23 株式会社日立製作所 半導体装置
JP6647151B2 (ja) * 2016-06-15 2020-02-14 株式会社 日立パワーデバイス 半導体装置およびその製造方法並びに半導体モジュールおよび電力変換装置
CN109478559B (zh) * 2016-07-20 2022-02-11 三菱电机株式会社 碳化硅半导体装置及其制造方法
JP7113220B2 (ja) * 2018-02-06 2022-08-05 パナソニックＩｐマネジメント株式会社 半導体素子およびその製造方法
US11387156B2 (en) * 2018-07-11 2022-07-12 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device including a resin covering a silicon carbide semiconductor chip
WO2020208706A1 (ja) * 2019-04-09 2020-10-15 三菱電機株式会社 半導体装置および半導体モジュール
CN110176434A (zh) * 2019-06-26 2019-08-27 无锡明祥电子有限公司 一种半导体芯片边缘和框架的绝缘封装方法及绝缘隔片
CN115050834A (zh) * 2022-05-31 2022-09-13 上海积塔半导体有限公司 一种mosfet单元结构及其制备方法
CN115312586B (zh) * 2022-09-01 2023-10-17 江苏长晶科技股份有限公司 一种碳化硅功率器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1029358A1 (de) * 1997-11-03 2000-08-23 Infineon Technologies AG Hochspannungsfeste randstruktur für halbleiterbauelemente
JP4796665B2 (ja) * 2009-09-03 2011-10-19 パナソニック株式会社 半導体装置およびその製造方法
JP2012156153A (ja) * 2011-01-21 2012-08-16 Kansai Electric Power Co Inc:The 半導体装置
JP2012191038A (ja) * 2011-03-11 2012-10-04 Mitsubishi Electric Corp 半導体装置の製造方法

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