JP2014103402A - Rectangular conductor for solar cell, process of manufacturing the same, lead wire for solar cell, and solar cell module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a rectangular conductor for a solar cell, a lead wire for a solar cell, and a solar cell module, that hardly cause warpage or breakage of a silicon crystal wafer during bonding of lead wires for connection even when a silicon crystal wafer is made to be a thin plate.SOLUTION: The rectangular conductor for a solar cell 10 has volume resistivity of 26.7 μΩ mm or less and has 0.2% yield strength value of 90 MPa or less (excluding 49 MPa or less) in a tension test, (excluding a rectangular conductor formed by cladding copper-invar-copper), and a lead wire 20 for a solar cell is formed by coating a solder plating film 13 on a surface of the rectangular conductor.

Description

  The present invention relates to a flat conductor for a solar cell, a method for manufacturing the same, a lead wire using the flat conductor, and a solar cell module. The present invention relates to a flat conductor for a solar cell that is excellent in mechanical characteristics, a manufacturing method thereof, a lead wire for a solar cell, and a solar cell module.

  In a solar cell in which a silicon crystal is grown on a substrate, as shown in FIG. 3, usually, a connecting lead wire 53 is joined to a predetermined region of a silicon crystal wafer (Si cell) 51, and electric power is transmitted therethrough. It is configured to do.

  In the connection lead wire, a solder plating film for connection to the cell is formed on the surface of the flat conductor. For example, as shown in FIG. 4, pure copper such as tough pitch copper or oxygen-free copper is used as the flat conductor 61, and Sn—Pb eutectic solder is used as the solder plating film 63 formed on the outside (see FIG. 4). For example, see Patent Document 1). In recent years, switching to a solder containing no Pb (Pb-free solder) as a constituent material of a solder plating film has been studied in consideration of the environment (for example, see Patent Document 2).

  By the way, since the silicon crystal wafer occupies most of the material cost among the members constituting the solar cell, the thinning of the silicon crystal wafer is being studied in order to reduce the manufacturing cost. However, when the silicon crystal wafer is thinned, the Si cells 51 connected via the solder plating 55 as shown in FIG. 5 due to the heating process at the time of soldering the connecting lead wires and the temperature change at the time of using the solar battery. The connection lead wire 53 may be warped or damaged. For this reason, in order to cope with this, there is an increasing need for a wire material having a small thermal expansion as the connecting lead wire 53.

  As an example of a connecting lead wire having a small thermal expansion, as shown in FIG. 6, an invar (Fe-36 mass% Ni) 73 having a small thermal expansion is clad with a copper material 71 and a solder plating film 75 is formed on the surface. There is.

Japanese Patent Laid-Open No. 11-21660 JP 2002-263880 A

  Table 1 shows the material characteristics of copper-invar-copper (Cu / Fe-36 mass% Ni / Cu) in comparison with the material characteristics of Cu alone, Invar alone (Fe-36 mass% Ni), and silicon alone.

  From Table 1, when a rectangular conductor clad with copper-invar-copper is manufactured using invar having low thermal expansion, although thermal expansion matching with Si is possible, volume resistivity is increased as compared with Cu. As a result, the electrical conductivity is lowered and the power generation efficiency as a solar cell is lowered. Moreover, since Invar contains about 36% of nickel, it becomes expensive.

  In addition, in the lead frame having the three-layer structure of copper-invar-copper described above, deformation such as warping may occur due to the crystal orientation of the copper material arranged on both sides of the invar or the nonuniformity of crystal grains. It was. These have been the cause of lowering reliability, such as lower productivity of solar cell modules and lowering of power generation efficiency when used for a long time. In addition, when the copper-invar-copper joint on the side surface is exposed to moisture, there is a risk that it becomes a local battery and corrodes.

  Furthermore, in the lead frame using invar, since punching is performed at the time of circuit formation, a large amount of wasted material is generated, resulting in an increase in manufacturing cost.

  Accordingly, an object of the present invention is to provide a rectangular solar cell conductor, a solar cell lead wire, and a solar cell module that are less likely to warp or break the silicon crystal wafer when the connection lead wire is joined even when the silicon crystal wafer is thinned. It is to provide.

  Another object of the present invention is to provide a solar cell flat conductor and a solar cell lead having good electrical conductivity.

  Furthermore, the other object of this invention is to provide the manufacturing method of the flat conductor for solar cells which can suppress the raise of manufacturing cost.

  In order to solve the above problems, the flat conductor for solar cells of the present invention (except for a flat conductor clad with copper-invar-copper) has a volume resistivity of 26.7 μΩ · mm or less and 0 in a tensile test. .2% proof stress is 90 MPa or less (excluding 49 MPa or less).

  The rectangular conductor may be one selected from the group consisting of Cu, Al, Ag, and Au.

  In order to solve the above problems, the method for producing a flat conductor for solar cells of the present invention (excluding a flat conductor clad with copper-invar-copper) is a conductor having a volume resistivity of 26.7 μΩ · mm or less. After forming into a rectangular cross section by rolling, heat treatment is performed to make the 0.2% proof stress value in the tensile test 90 MPa or less (excluding 49 MPa or less).

  The heat treatment can be performed by a batch heating method using a heater or an electric heating method.

  Moreover, a part or all of the surface of the flat conductor for solar cell may be subjected to solder plating to form a solar cell lead wire.

  The solder plating can be Sn-Ag-Cu-based lead-free solder.

  Moreover, the several photovoltaic cell used in order to convert the energy of sunlight into an electrical energy is arrange | positioned, and the said several photovoltaic cell is connected by said rectangular conductor for photovoltaic cells It can be a module.

  Moreover, the several photovoltaic cell used in order to convert the energy of sunlight into an electrical energy is arrange | positioned, and the said several photovoltaic cell is connected by said solar cell lead wire It can be a module.

In the present invention, since the 0.2% proof stress value of the conductor is reduced, it is possible to reduce the cell warping force generated by the thermal contraction of the conductor after the solder connection. For this reason, the curvature of a cell can be reduced in the case of the thermal contraction after a solder connection with a silicon cell.
Moreover, since the conductor whose volume resistivity is 50 microhm * mm or less is used, the lead wire for the connection of the solar cell which has high electroconductivity can be provided.

  Furthermore, according to the manufacturing method of the present invention, since the 0.2% proof stress value of the conductor is reduced by heat treatment, the rectangular conductor for solar cell can be provided by a simple method without cost.

It is sectional drawing which shows one Embodiment of the flat conductor for solar cells of this invention. It is sectional drawing which shows one Embodiment of the lead wire for solar cells of this invention. It is a perspective view which shows the connection state of the lead wire for a connection to a photovoltaic cell. It is sectional drawing which shows the conventional lead wire for solar cells. It is explanatory drawing which shows the curvature which generate | occur | produces when soldering the Si cell and the connecting lead wire. It is sectional drawing which shows the conventional lead wire for solar cells.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
(Flat rectangular conductor for solar cells)
In FIG. 1, one Embodiment of the flat conductor for solar cells of this invention is shown.
In this flat battery 10 for solar battery, the outer shape of the soft conductor 1 is flat so that solder connection to the cell is easy.

(Volume resistivity of conductor)
The conductor 1 is preferably made of a conductor material having a relatively low volume resistivity (for example, a material having a volume resistivity of 50 μΩ · mm or less) from the viewpoint of reducing power generation loss of the solar cell.
As shown in Table 2, there are Au, Ag, Al, etc. in addition to Cu as conductive materials having a relatively small volume resistivity. Among these, Ag has the lowest volume resistivity and can maximize power generation efficiency. On the other hand, when priority is given to cost reduction, Cu is good, and when weight reduction is desired, it is desirable to select Al.

(0.2% proof stress value of conductor)
In general, when dissimilar metals having different thermal expansion coefficients are connected at a high temperature, a value obtained by integrating the thermal expansion coefficient and Young's modulus with the temperature change is a force for generating warpage. However, the rigidity of both members to be connected as in the case of a solar cell is significantly different, or when the soldering temperature is as high as 200 ° C. or higher, the conductor having a smaller cross-sectional area yields. The force due to the rate does not become the warp generation force.

  In the case of a conductor, if the yield stress is small, it is plastically deformed with a small force, and no further deformation resistance is obtained. That is, the lower the strength and the lower the proof stress, the less the load on the silicon crystal wafer during bonding. For this reason, the 0.2% proof stress value in the tensile test is used as an index of plastic deformation, and the 0.2% proof stress of the conductor 1 is 90 MPa or less, preferably 80 MPa or less, and more preferably 70 MPa or less. By selecting such a soft conductor having a low 0.2% proof stress value, it is possible to reduce the thermal stress during conductor bonding to the silicon crystal wafer. Further, by setting the 0.2% proof stress to 80 MPa or less, Si warp can be reduced as compared with a copper-invar-copper clad material, and a practically significant effect can be obtained.

(Method for producing flat conductor for solar cell)
The flat conductor 10 for a solar cell is formed by forming the conductor 1 into a rectangular shape by die drawing, roll rolling, or a composite process thereof, and then heat-treating with a current-carrying type or batch type equipment to reduce 0.2% proof stress. It is obtained by doing. Here, as a heat treatment method for reducing the 0.2% proof stress, a batch-type heating method using a heater that can sufficiently apply heat energy is preferable to an electric heating method. Alternatively, a furnace in a hydrogen reducing atmosphere can be used from the viewpoint of preventing oxidation.

(Solar cell lead wire)
In FIG. 2, one Embodiment of the lead wire for solar cells of this invention is shown.
This solar cell lead wire 20 is obtained by applying a solder plating film 13 to the entire surface of the conductor 1 shown in FIG. The solder plating 13 is a lead-free product from the environmental aspect, and is performed on the entire outer periphery.

  In addition, a solder composition that has been required to be able to be connected at a low temperature in consideration of thermal expansion matching with the cell has been required so far. By using the conductor 1 of the present embodiment, Sn-Ag-Cu having a high connection temperature is required. It is possible to use a solder having a composition of the system.

  The solar cell assembly is obtained by connecting the solar cell lead wire to a predetermined contact region (for example, an Ag plating region) on the cell surface of the solar cell module.

(Effects of the flat conductor for the solar cell and the lead wire for the solar cell)
As explained above, since the flat conductor for solar cell and the lead wire for solar cell of this embodiment use a conductor having a 0.2% proof stress of 90 MPa or less, the heat shrinkage of the conductor after solder connection. The force which warps the cell which generate | occur | produces by can be reduced. For this reason, the curvature of a cell can be reduced in the case of the thermal contraction after a solder connection with a silicon cell.
In addition, since the flat conductor for solar cell and the lead wire for solar cell of this embodiment use a highly conductive conductor having a volume resistivity of 50 μΩ · mm or less, the power generation efficiency as a solar cell is maintained well. can do.

  Furthermore, according to the manufacturing method of the present embodiment, since the 0.2% proof stress value of the conductor is reduced by heat treatment, the rectangular conductor for solar cell can be provided by a simple method without cost.

A Cu material having a width of 2.0 mm and a thickness of 0.16 mm is rolled and formed into a rectangular wire shape to form the conductor 1 shown in FIG. 2, and the periphery thereof is made of Sn-3% Ag-0.5% Cu-based lead-free solder. A solder plating film 13 was formed so as to cover the solar cell lead wire 20.
This solar cell lead wire 20 is manufactured with various 0.2% proof stress as shown in Table 3 under different heat treatment conditions and warped by soldering to a Si cell 150 mm long × 150 mm wide and 200 μm thick. I investigated.

  From the results in Table 3, warpage is reduced as the 0.2% proof stress is lowered, and the warpage is reduced to about 1/3 when the 0.2% proof stress is 40 MPa than when the conventional Cu conductor (140 MPa) is used. I understood that I could do it.

  As a comparison, when the cell warpage of a Cu-invar-Cu (ratio 2: 1: 2) connection and a 0.2% proof stress 40 MPa Cu conductor connection was examined, it was 3.0 mm. 0.5 mm and half.

DESCRIPTION OF SYMBOLS 1 Conductor 10 Flat conductor for solar cells 13 Solder plating film 20 Lead wire for solar cells 51 Si cell 53 Lead wire for connection 55 Solder plating 61 Flat conductor 63 Solder plating film 71 Copper material 73 Invar 75 Solder plating film

Claims (5)

  A rectangular conductor for solar cells (however, copper--) having a volume resistivity of 26.7 μΩ · mm or less and a 0.2% proof stress value in a tensile test of 90 MPa or less (excluding 49 MPa or less) Invar—except for rectangular conductors clad with copper.   A conductor having a volume resistivity of 26.7 μΩ · mm or less is formed into a rectangular cross section by rolling, and then subjected to a heat treatment so that a 0.2% proof stress value in a tensile test is 90 MPa or less (except 49 MPa or less). A method for producing a featured flat conductor for a solar cell (excluding a copper-invar-copper-clad flat conductor).   A lead wire for a solar cell, wherein a part or all of the surface of the flat conductor for a solar cell according to claim 1 is subjected to solder plating. A plurality of solar cells used to convert solar energy into electrical energy are arranged,
The solar cell module in which the plurality of solar cells are connected by a rectangular conductor for solar cell according to claim 1. A plurality of solar cells used to convert solar energy into electrical energy are arranged,
The plurality of solar cells are solar cell modules connected by a solar cell lead wire according to claim 3.

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