JPH1121660A - Connecting wire for solar battery - Google Patents

Connecting wire for solar battery

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Publication number
JPH1121660A
JPH1121660A JP9178132A JP17813297A JPH1121660A JP H1121660 A JPH1121660 A JP H1121660A JP 9178132 A JP9178132 A JP 9178132A JP 17813297 A JP17813297 A JP 17813297A JP H1121660 A JPH1121660 A JP H1121660A
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JP
Japan
Prior art keywords
solder
solar cell
surface
cu
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9178132A
Other languages
Japanese (ja)
Inventor
Hiroyuki Akutsu
Masayoshi Aoyama
Takao Ichikawa
Kenji Konishi
Atsushi Otake
敦志 大竹
健司 小西
貴朗 市川
裕幸 阿久津
正義 青山
Original Assignee
Hitachi Cable Ltd
Hitachi Senzai Kk
日立線材株式会社
日立電線株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd, Hitachi Senzai Kk, 日立線材株式会社, 日立電線株式会社 filed Critical Hitachi Cable Ltd
Priority to JP9178132A priority Critical patent/JPH1121660A/en
Publication of JPH1121660A publication Critical patent/JPH1121660A/en
Application status is Pending legal-status Critical

Links

Abstract

PROBLEM TO BE SOLVED: To prevent a decrease in an effective power generating area caused by flow-out of molten solder to out of an Ag coated range of an Si wafer by making at least one surface of a Cu rod flat and forming solder coated layer on this surface as arch state of the cross section. SOLUTION: For example, both surfaces of the Cu rod 1 having about 125 μm thickness (t) and about 1.5 mm width W are made flat and on both surfaces thereof, the arch state solid coated layers 2a, 2b having about 1.0-50 μm the max. thickness of the center position are arranged. The solder coated layers 2a, 2b can be formed by dipping the lower part of a die having a gap according to the thickness of solder coated layer into the solder bath having the surface covered with non-oxidizing gas, passing the Cu rod into this die, pulling up and forming the stuck solder as the arch state by surface tension. This connecting line is arranged in the Ag coated range of the Si wafer and pressurized while heating, and then, the solder is fluidized to break the oxide film, and the good soldering is executed by flowing to the whole body of the contacting surface with a little quantity of the solder while exhausting gas bubbles.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、太陽電池用接続線に関し、特に、太陽電池のシリコン(Si)ウェハーに接続されるはんだめっき接続線に関する。 The present invention relates to relates to a connecting line for a solar cell, in particular, to solder plated connection line connected to the silicon of the solar cell (Si) wafer.

【0002】 [0002]

【従来の技術】図5は太陽電池を構成するSiウェハー20を示し、Agめっき領域3にはんだめっき接続線1 BACKGROUND ART FIG. 5 shows the Si wafer 20 constituting the solar cell, the solder plating connection line 1 to Ag plating zone 3
0が接続されている。 0 is connected. 図6(a)ははんだめっき接続線10を示し、Cu条1の両面に平滑なはんだめっき層2 6 (a) shows a solder-plated connecting line 10, a smooth solder plating layers on both sides of the Cu Article 1 2
a,2bが形成されている。 a, 2b are formed. Cu条1の厚さt 1は、例えば、125μmであり、幅Wは、例えば、1.5mm The thickness t 1 of the Cu Article 1 is, for example, a 125μm, width W is, for example, 1.5mm
である。 It is. また、はんだめっき層2a、2bの厚さt In addition, the solder plating layer 2a, 2b of the thickness t
2は、例えば、20〜30μmである。 2 is, for example, 20 to 30 [mu] m. 図6(b)はこのはんだめっき接続線10をSiウェハー20のAgめっき領域3に接続した状態を示す。 FIG 6 (b) shows a state of connecting the solder plated connecting line 10 to the Ag plating zone 3 of the Si wafer 20. この接続にあたっては、Siウェハー20のAgめっき領域3にはんだめっき接続線10を配置し、Siウェハー20を傷めない程度にはんだめっき接続線10を加圧するとともに加熱することによりはんだめっき接続線10がSiウェハー2 In this connection, the solder plating connecting line 10 arranged Ag plating zone 3 of the Si wafer 20, the solder plating connecting line 10 by heating with pressurized solder plated connecting line 10 so as not to damage the Si wafer 20 Si wafer 2
0のAgめっき領域3に接続される。 It is connected to the Ag plating zone 3 0.

【0003】 [0003]

【発明が解決しようとする課題】しかし、従来の太陽電池用接続線によると、図6(b)に示したように、はんだめっき層2a,2bが溶融して流れてAgめっき領域3を超えることによってはんだの流れ込み部2cがSi [SUMMARY OF THE INVENTION] However, more than according to the conventional solar cell connecting lines, as shown in FIG. 6 (b), solder plating layer 2a, the Ag plating zone 3 2b to flow to melt Si is solder flows portion 2c by
ウェハー20の有効発電面積まで被うことになるので、 It means that the cover to the effective power generation area of ​​the wafer 20,
発電効率を低下させることになる。 Thereby deteriorating the power generation efficiency. これを防ぐために、 In order to prevent this,
はんだめっき層2a,2bを薄くすると、はんだの容量が少ないために溶融時にはんだ流れが不十分ではんだめっき層2a,2bの表面に形成された酸化膜がうまく破れないし、はんだが接触面全体によく流れず、また、気泡を閉じ込めて接続抵抗を高くし、発生電力の出力効率を低下させる。 Solder plating layer 2a, when thin 2b, insufficient flow solder during melting for solder volume is small solder plating layer 2a, to oxide film formed on the surface of the 2b is not torn well, the entire solder contact surface good flow without also increasing the connection resistance confine the bubbles and reduces the output efficiency of the power generated.

【0004】従って、本発明の目的は溶融したはんだがSiウェハーのAgめっき領域を超えて流れないようにした太陽電池用接続線を提供することである。 [0004] Therefore, an object of the present invention is to provide a solar cell connecting line as molten solder does not flow beyond the Ag plating zone of the Si wafer.

【0005】本発明の他の目的は有効発電面積の減少を抑えて発電効率の低下を防ぐ太陽電池用接続線を提供することである。 Another object of the present invention is to provide a solar cell connecting line to prevent a decrease in power generation efficiency by suppressing a reduction in the effective power generation area.

【0006】本発明の他の目的ははんだめっき層の表面に形成された酸化膜が確実に破れるようにしてはんだが接触面全体に流れるようにした太陽電池用接続線を提供することである。 Another object of the present invention is to provide a connecting line for a solar cell solder as broken reliably oxide film formed on the surface of the solder plating layer was set to flow across the contact surface.

【0007】本発明の他の目的は気泡の閉じ込めをなくして接続抵抗を減少させ、発生電力の出力効率を高める太陽電池用接続線を提供することである。 Another object of the present invention reduces the connection resistance by eliminating the confinement of the bubbles is to provide a solar cell connecting lines to increase the output efficiency of the power generated.

【0008】 [0008]

【課題を解決するための手段】本発明は上記の目的を実現するため、少なくとも一面が平面にされたCu条と、 The present invention SUMMARY OF] To realize the above object, a Cu strip of at least one surface is a plane,
前記一面に形成された断面が円弧状のはんだめっき層を備えたことを特徴とする太陽電池用接続線を提供する。 Formed in said one side section is to provide a connecting wire for a solar cell characterized by comprising an arcuate solder plating layer.

【0009】また、本発明は上記の目的を実現するため、両面が平面にされたCu条と、前記両面に形成された断面が円弧状のはんだめっき層を備えたことを特徴とする太陽電池用接続線を提供する。 Further, the present invention in order to achieve the above object, a solar cell, characterized in that the Cu strip whose both surfaces are in a plane, the cross-section formed in the both sides with an arc-shaped solder plating layer to provide a use connecting lines.

【0010】 [0010]

【発明の実施の形態】図1は本発明の太陽電池用接続線の第1の実施の形態を示し、厚さtが125μmであり、幅Wが1.5mmであるCu条1と、その両面に形成された円弧状のはんだめっき層2a,2bより構成されている。 Figure 1 DETAILED DESCRIPTION OF THE INVENTION show a first embodiment of a solar cell connecting line of the present invention, the thickness t of 125 [mu] m, the Cu Article 1 width W is 1.5 mm, the arcuate solder plating layer 2a formed on both sides, and is configured from 2b. はんだめっき層2a,2bは、一端からw/ Solder plating layer 2a, 2b is, from one end w /
2の中心位置Aにおいて1.0〜50μmの最大の厚さを有する。 Having a maximum thickness of 1.0~50μm in 2 of the center position A. これによれば、はんだめっき層2a,2bのはんだの容量は、それぞれ図6に示す従来の場合と比較して少なくなる。 According to this, the solder plating layer 2a, solder capacity 2b is smaller as compared with the conventional case shown in FIG. 6, respectively.

【0011】図2(a)は、図1で示した太陽電池用接続線をSiウェハー20のAgめっき領域3に配置した状態を示す。 [0011] FIG. 2 (a) shows a state of arranging the solar cell connecting lines shown in FIG. 1 in the Ag plating zone 3 of the Si wafer 20. この状態において、加熱しながら中心位置Aに圧力Pを付加すると、はんだ流れFが発生し、これによってはんだめっき層2bの表面の酸化膜が破れ、S In this state, adding the pressure P at the central position A while heating, the solder flow F is generated, thereby breaking the oxide film on the surface of the solder plating layer 2b, S
iウェハー20のAgめっき領域3と接続される。 i is connected to the Ag plating zone 3 of the wafer 20. はんだ流れFが発生すると、前述した酸化膜の破壊に加えて破壊された酸化膜、気泡およびよごれの追い出しが可能になり、新鮮な面同志の接合が行われる。 When the solder flow F is generated, the oxide film is destroyed in addition to the destruction of the oxide film described above, it allows for flush bubbles and dirt, is performed junction fresh surface comrades. 図2(b)は図2(a)の接合方法によって接続された状態を示し、 FIG. 2 (b) shows a state connected by a joining method of FIG. 2 (a),
上記により接合が容易となるため、はんだめっき層2 Since joining the above is facilitated, the solder plating layer 2
a,2bのはんだの容量が少なくて済むようになり、この結果、溶融したはんだがAgめっき領域3内を超えることがなくなり、Siウェハー20の有効発電面積の減少が生じない。 a, become fewer solder capacity 2b, this result, molten solder prevents exceeding the Ag plating zone 3, a decrease in the effective power generation area of ​​the Si wafer 20 does not occur.

【0012】図3は本発明の太陽電池用接続線の第2の実施の形態を示し、厚さtおよび幅WのCu条1の両面に2つの円弧面を有するはんだ層2a,2bを形成して構成されている。 [0012] Figure 3 forms the second shows the embodiment, the solder layer 2a having two arcuate surfaces on both sides of the Cu strip 1 having a thickness t and a width W, 2b of the solar cell connection line present invention It is constructed by. この太陽電池用接続線を図2(a)に示したSiウェハー20のAgめっき領域3に接続するとき、はんだめっき層2bにはんだ流れF 1 ,F 2が生じるので、第1の実施の形態と同じように、所期の接続が得られる。 When connecting the solar cell connecting line to the Ag plating zone 3 of the Si wafer 20 shown in FIG. 2 (a), since the flow F 1, F 2 solder solder plating layer 2b is produced, the first embodiment Similarly, expected connection is obtained between.

【0013】図4は本発明の太陽電池用接続線の製造装置を示し、非酸化性ガスで表面を覆われたはんだ浴(はんだは、例えば、一般的な60Sn−40Pbのはんだや、Sn−3.5%Ag−0.7%Cu、Sn−2.0 [0013] Figure 4 shows an apparatus for manufacturing a solar cell connecting line of the present invention, non-oxidizing gas covered the surface with a solder bath (solder, for example, a general 60Sn-40Pb solder or, Sn- 3.5% Ag-0.7% Cu, Sn-2.0
%Ag−7.5%Bi−0.5%Cu等の無鉛はんだが使用される)2と、このはんだ浴2に配置されたダイス4を有する。 % Lead-free solder, such as Ag-7.5% Bi-0.5% Cu is used) with and 2, a die 4 which is disposed in the solder bath 2. ダイス4はCu条1との間にCu条1の両面に形成されるはんだめっき層2a,2bの厚さに応じた間隔gを有し、また、その出口のレベルH 2ははんだ浴2の浴面H 1より下になっている。 Solder plating layer 2a die 4 is formed on both surfaces of the Cu strip 1 between the Cu strip 1 has a gap g corresponding to a thickness of 2b, The level of H 2 the outlet of the solder bath 2 which is below the bath surface H 1. はんだめっき層2 Solder plating layer 2
a,2bの円弧面の形状は、Cu条1の幅W、はんだ浴の温度、Cu条1の引き上げ速度、ダイス4とCu条1 a, the shape of the arcuate surface of the 2b, the width W of the Cu Article 1, the solder bath temperature, the pulling speed of the Cu Article 1, die 4 and Cu Article 1
の間隔g(はんだの付着量)、ダイス4の形状およびはんだの表面張力によって制御されるが、その中でもはんだの表面張力の影響が最も大である。 Distance g (adhesion of the solder), is controlled by the surface tension of the shape and the solder of the die 4, it is the largest effect of the surface tension of the solder among them.

【0014】図4の装置で製造された太陽電池用接続線は電気めっきで製造されたものに比較してエージングがなく,すぐれた接合特性が得られる。 [0014] Figure 4 of the solar cell connection line produced by the device has no aging as compared to those produced by electroplating, excellent bonding characteristics can be obtained. 電気めっきで製造されたものははんだ層が多孔質になるので、エージングが発生し、これを防ぐためには、電気めっき後にはんだ層を加熱溶融しなければならない。 Since those produced by electroplating the solder layer becomes porous, aging occurs and prevents this must be heated melt the solder layer after the electroplating.

【0015】以上の実施の形態では、はんだとしてSn [0015] In the above embodiment, Sn as solder
−Pb系のものを使用したが、環境汚染を防ぐためにP It was from -Pb system but, P to prevent environmental pollution
bを含まないはんだを使用することができる。 The solder that does not include the b can be used. また、はんだ層がCu条の両面に形成された構成としたが、片面にのみ形成されても良い。 Further, a configuration in which a solder layer is formed on both surfaces of the article Cu, may be formed on only one surface. 更に、Cu条はタフピッチ銅、無酸素銅等から製造されるが、そのままで使用されても良いが、Sn,Ag,Ni等でめっきされても良い。 Furthermore, Cu strip is tough pitch copper, are produced from the oxygen-free copper or the like, may be used as such but, Sn, Ag, may be plated with Ni or the like.

【0016】 [0016]

【発明の効果】以上説明した通り、本発明の太陽電池用接続線によると、Cu条の平面にされた接合面に円弧面を有したはんだ層を形成したので、その最大厚さの制御によってはんだがSiウェハーのAgめっき領域を超えて流れるのを適確に防止することができ、それによってSiウェハーの有効発電面積の減少を抑えて発電効率の低下を防ぐことができる。 As described in the foregoing, according to the solar cell connection line of the present invention, since the formation of the solder layer having an arc surface on the joint surface which is in the plane of the Cu strip, the control of the maximum thickness solder from flowing beyond the Ag plating zone of the Si wafer can be prevented to accurately, thereby preventing the reduction in the power generation efficiency by suppressing a reduction in the effective power generation area of ​​the Si wafer. また、接合時の溶融はんだ層内にはんだ流れが形成されるので、酸化膜の破壊および排出と気泡の排出が確実に行われ、それによって接触抵抗の小さい接続部が得られ、発生電力を高い効率で出力することができる。 Further, since the flow solder joint when the molten solder layer is formed, it provides highly reliable destruction and discharge of emissions and bubbles oxide film, whereby small connecting portion is obtained contact resistance, high generation power it can be output in efficiency.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の太陽電池用接続線の第1の実施の形態を示す断面図。 Figure 1 is a sectional view showing a first embodiment of a solar cell connecting line of the present invention.

【図2】(a)本発明の第1の実施の形態の太陽電池用接続線の接続時の状態を示す説明図。 2 (a) diagram showing a state during connection of the solar cell connecting line of the first embodiment of the present invention. (b)本発明の第1の実施の形態の太陽電池用接続線の接続後の状態を示す説明図。 (B) explanatory view showing a state after the connection of the solar cell connecting line of the first embodiment of the present invention.

【図3】本発明の太陽電池用接続線の第2の実施の形態を示す断面図。 3 is a cross-sectional view showing a second embodiment of a solar cell connecting line of the present invention.

【図4】本発明の第1の実施の形態の太陽電池用接続線を製造する製造装置を示す説明図。 Explanatory view showing a manufacturing apparatus for manufacturing a solar cell connecting line of the first embodiment of the present invention; FIG.

【図5】太陽電池用Siウェハーに太陽電池用接続線が接続された状態を示す説明図。 Figure 5 is an explanatory view showing a state where the solar cell connection line is connected to the Si wafer for a solar cell.

【図6】(a)従来の太陽電池用接続線を示す断面図。 6 (a) is a cross-sectional view of a conventional solar cell connecting line. (b)従来の太陽電池用接続線の接続状態を示す断面図。 (B) cross-sectional view showing a connection state of a conventional solar cell connecting line.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 Cu条 2 はんだ浴 2a,2b はんだめっき層 2c はんだ流れ込み部 3 Agめっき領域 4 ダイス 10 太陽電池用接続線 20 太陽電池用Siウェハー 1 Cu Article 2 solder bath 2a, 2b solder plating layer 2c solder flows portion 3 Ag plating zone 4 die 10 solar cell connection line 20 Si wafers for solar cells

───────────────────────────────────────────────────── フロントページの続き (72)発明者 青山 正義 茨城県日立市日高町5丁目1番1号 日立 電線株式会社パワーシステム研究所内 (72)発明者 市川 貴朗 茨城県日立市日高町5丁目1番1号 日立 電線株式会社パワーシステム研究所内 (72)発明者 阿久津 裕幸 茨城県日立市川尻町4丁目10番1号 日立 線材株式会社内 ────────────────────────────────────────────────── ─── of the front page continued (72) inventor Masayoshi Aoyama Hitachi City, Ibaraki Prefecture Hidaka-cho 5-chome No. 1 Hitachi Electric cable Co., Ltd. power systems in the Laboratory (72) inventor Takashi Ichikawa Akira Hitachi City, Ibaraki Prefecture Hidaka-cho 5 chome No. 1 Hitachi Electric cable Co., Ltd. power systems in the Laboratory (72) inventor Akutsu, Hiroyuki Hitachi City, Ibaraki Prefecture Kawajiri-cho 4-chome 10th No. 1 Hitachi wire within Co., Ltd.

Claims (6)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 少なくとも一面が平面にされたCu条と、前記一面に形成された断面が円弧状のはんだめっき層を備えたことを特徴とする太陽電池用接続線。 1. A and Cu strip in which at least one surface is in a plane, the connecting lines for a solar cell one side to the formed cross-section is characterized by including an arc-shaped solder plating layer.
  2. 【請求項2】 両面が平面にされたCu条と、 前記両面に形成された断面が円弧状のはんだめっき層を備えたことを特徴とする太陽電池用接続線。 Wherein the Cu strip that is both sides in the plane, connecting lines for a solar cell, wherein the formed on both sides in cross-section with an arc-shaped solder plating layer.
  3. 【請求項3】 前記Cu条は、両側面が露出しているか薄いはんだめっき層で覆われている構成の請求項2記載の太陽電池用接続線。 Wherein the Cu Article, claim 2 solar cell connection line according the configuration in which both sides are covered with either a thin solder-plated layer is exposed.
  4. 【請求項4】 前記Cu条は、前記両面の一面が前記はんだめっき層の溶融によってシリコン(Si)ウェハーのAgめっき領域に接合されている構成の請求項2記載の太陽電池用接続線。 Wherein said Cu Article, one surface the solder plating layer silicon (Si) according to claim 2 solar cell connection line according the configuration that is joined to the Ag plating region of the wafer by the melting of the duplex.
  5. 【請求項5】 前記はんだめっき層は、溶融によって前記ウェハーの前記Agめっき領域を超えて発電領域に達しないように構成された請求項4記載の太陽電池用接続線。 Wherein said solder plating layer, the Ag plating solar cell connection line region Beyond claim 4 configured so as not to reach the power generation region of the wafer by melt.
  6. 【請求項6】 前記はんだめっき層は、無鉛はんだで構成されている請求項1記載の太陽電池用接続線。 Wherein said solder plating layer claim 1 solar cell connection line according configured in a lead-free solder.
JP9178132A 1997-07-03 1997-07-03 Connecting wire for solar battery Pending JPH1121660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9178132A JPH1121660A (en) 1997-07-03 1997-07-03 Connecting wire for solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9178132A JPH1121660A (en) 1997-07-03 1997-07-03 Connecting wire for solar battery

Publications (1)

Publication Number Publication Date
JPH1121660A true JPH1121660A (en) 1999-01-26

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Country Status (1)

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WO2005114751A1 (en) * 2004-05-21 2005-12-01 Neomax Materials Co., Ltd. Electrode wire for solar battery
EP1626443A1 (en) * 2003-05-22 2006-02-15 Neomax Materials Co., Ltd. Electrode wire material and solar battery having connection lead formed of the wire material
JP2006054355A (en) * 2004-08-13 2006-02-23 Hitachi Cable Ltd Rectangular conductor for solar cell, its manufacturing method and lead wire for solar cell
JP2006187788A (en) * 2005-01-06 2006-07-20 Hitachi Cable Ltd Pb-FREE SOLDER, AND CONNECTING LEAD WIRE USING THE SAME
US7173188B2 (en) 2003-07-15 2007-02-06 Hitachi Cable, Ltd. Straight angle conductor and method of manufacturing the same
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