JP2014103391A - 複数の発光スタック層を有する発光装置 - Google Patents

複数の発光スタック層を有する発光装置 Download PDF

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Publication number
JP2014103391A
JP2014103391A JP2013228191A JP2013228191A JP2014103391A JP 2014103391 A JP2014103391 A JP 2014103391A JP 2013228191 A JP2013228191 A JP 2013228191A JP 2013228191 A JP2013228191 A JP 2013228191A JP 2014103391 A JP2014103391 A JP 2014103391A
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Japan
Prior art keywords
light emitting
light
quantum well
emitting device
layer
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Pending
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JP2013228191A
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English (en)
Japanese (ja)
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JP2014103391A5 (enExample
Inventor
Min-Hsun Hsieh
シュン，シエ ミン
Yi-Chieh Lin
チエ，リン イ
Rong-Ren Lee
レン，リー ロン
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Epistar Corp
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Epistar Corp
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Publication date
Priority claimed from US13/683,476 external-priority patent/US8927958B2/en
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2014103391A publication Critical patent/JP2014103391A/ja
Publication of JP2014103391A5 publication Critical patent/JP2014103391A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Devices (AREA)
JP2013228191A 2012-11-21 2013-11-01 複数の発光スタック層を有する発光装置 Pending JP2014103391A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/683,476 US8927958B2 (en) 2011-07-12 2012-11-21 Light-emitting element with multiple light-emitting stacked layers
US13/683,476 2012-11-21

Publications (2)

Publication Number Publication Date
JP2014103391A true JP2014103391A (ja) 2014-06-05
JP2014103391A5 JP2014103391A5 (enExample) 2016-12-01

Family

ID=50625700

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Application Number Title Priority Date Filing Date
JP2013228191A Pending JP2014103391A (ja) 2012-11-21 2013-11-01 複数の発光スタック層を有する発光装置

Country Status (5)

Country Link
JP (1) JP2014103391A (enExample)
KR (2) KR20140065340A (enExample)
CN (1) CN103840045A (enExample)
DE (1) DE102013108782B4 (enExample)
TW (1) TWI589019B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018531514A (ja) * 2015-10-08 2018-10-25 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593289B (zh) * 2011-01-10 2015-05-20 晶元光电股份有限公司 发光元件
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
DE102017103856A1 (de) 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN113140657B (zh) * 2021-05-13 2022-04-19 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP2001184910A (ja) * 1999-12-28 2001-07-06 Toshiba Lighting & Technology Corp 発光ダイオードを用いた照明用光源および照明装置
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US20060043385A1 (en) * 2004-08-27 2006-03-02 Institute Of Semiconductors, Chinese Academy Of Sciences White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same
JP2006108673A (ja) * 2004-09-30 2006-04-20 Osram Opto Semiconductors Gmbh 多重発光ダイオード装置
JP2006269938A (ja) * 2005-03-25 2006-10-05 Nichia Chem Ind Ltd 発光装置、発光素子用蛍光体及びその製造方法
JP2007095844A (ja) * 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
JP2008141118A (ja) * 2006-12-05 2008-06-19 Rohm Co Ltd 半導体白色発光装置
JP2009152297A (ja) * 2007-12-19 2009-07-09 Rohm Co Ltd 半導体発光装置
US20090309120A1 (en) * 2006-09-28 2009-12-17 Osram Opto Semiconductors Gmbh LED Semiconductor Element, and Use Thereof
JP2010267571A (ja) * 2009-05-18 2010-11-25 Toshiba Lighting & Technology Corp 照明装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR100631832B1 (ko) 2003-06-24 2006-10-09 삼성전기주식회사 백색 발광소자 및 그 제조방법
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP2001184910A (ja) * 1999-12-28 2001-07-06 Toshiba Lighting & Technology Corp 発光ダイオードを用いた照明用光源および照明装置
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US20060043385A1 (en) * 2004-08-27 2006-03-02 Institute Of Semiconductors, Chinese Academy Of Sciences White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same
JP2006108673A (ja) * 2004-09-30 2006-04-20 Osram Opto Semiconductors Gmbh 多重発光ダイオード装置
JP2006269938A (ja) * 2005-03-25 2006-10-05 Nichia Chem Ind Ltd 発光装置、発光素子用蛍光体及びその製造方法
JP2007095844A (ja) * 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
US20090309120A1 (en) * 2006-09-28 2009-12-17 Osram Opto Semiconductors Gmbh LED Semiconductor Element, and Use Thereof
JP2008141118A (ja) * 2006-12-05 2008-06-19 Rohm Co Ltd 半導体白色発光装置
JP2009152297A (ja) * 2007-12-19 2009-07-09 Rohm Co Ltd 半導体発光装置
JP2010267571A (ja) * 2009-05-18 2010-11-25 Toshiba Lighting & Technology Corp 照明装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018531514A (ja) * 2015-10-08 2018-10-25 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法
JP2022071179A (ja) * 2015-10-08 2022-05-13 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色～赤色の発光を有するｉｉｉ族窒化物半導体発光ｌｅｄ

Also Published As

Publication number Publication date
TW201421737A (zh) 2014-06-01
DE102013108782B4 (de) 2024-05-08
TWI589019B (zh) 2017-06-21
KR20180064348A (ko) 2018-06-14
DE102013108782A1 (de) 2014-05-22
KR20140065340A (ko) 2014-05-29
CN103840045A (zh) 2014-06-04

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