JP2014090181A5 - - Google Patents

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Publication number
JP2014090181A5
JP2014090181A5 JP2013243025A JP2013243025A JP2014090181A5 JP 2014090181 A5 JP2014090181 A5 JP 2014090181A5 JP 2013243025 A JP2013243025 A JP 2013243025A JP 2013243025 A JP2013243025 A JP 2013243025A JP 2014090181 A5 JP2014090181 A5 JP 2014090181A5
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Japan
Prior art keywords
gas supply
reaction gas
substrate
plasma processing
processing region
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JP2013243025A
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English (en)
Japanese (ja)
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JP5692337B2 (ja
JP2014090181A (ja
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Publication of JP2014090181A5 publication Critical patent/JP2014090181A5/ja
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JP2013243025A 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体 Active JP5692337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013243025A JP5692337B2 (ja) 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013243025A JP5692337B2 (ja) 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2010075900A Division JP5423529B2 (ja) 2010-03-29 2010-03-29 成膜装置、成膜方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2014090181A JP2014090181A (ja) 2014-05-15
JP2014090181A5 true JP2014090181A5 (cg-RX-API-DMAC10.html) 2014-06-26
JP5692337B2 JP5692337B2 (ja) 2015-04-01

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JP2013243025A Active JP5692337B2 (ja) 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体

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JP (1) JP5692337B2 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7073924B2 (ja) * 2018-06-06 2022-05-24 東京エレクトロン株式会社 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
JP7712048B2 (ja) 2021-09-30 2025-07-23 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100343134B1 (ko) * 1998-07-09 2002-10-25 삼성전자 주식회사 유전막형성방법
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
KR20090108747A (ko) * 2008-04-14 2009-10-19 삼성전자주식회사 가변적 원자층 적층 온도를 이용한 반도체 및 그 제조 방법
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置

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