JP2014085101A5 - - Google Patents

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Publication number
JP2014085101A5
JP2014085101A5 JP2012237314A JP2012237314A JP2014085101A5 JP 2014085101 A5 JP2014085101 A5 JP 2014085101A5 JP 2012237314 A JP2012237314 A JP 2012237314A JP 2012237314 A JP2012237314 A JP 2012237314A JP 2014085101 A5 JP2014085101 A5 JP 2014085101A5
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JP
Japan
Prior art keywords
heat conversion
conversion member
semiconductor
member according
heat
Prior art date
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JP2012237314A
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English (en)
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JP5994569B2 (ja
JP2014085101A (ja
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Priority claimed from JP2012237314A external-priority patent/JP5994569B2/ja
Priority to JP2012237314A priority Critical patent/JP5994569B2/ja
Priority to PCT/JP2013/077251 priority patent/WO2014065107A1/ja
Priority to EP13849199.8A priority patent/EP2913605A4/en
Priority to CN201380038881.XA priority patent/CN104487785A/zh
Priority to US14/437,694 priority patent/US20150285532A1/en
Publication of JP2014085101A publication Critical patent/JP2014085101A/ja
Publication of JP2014085101A5 publication Critical patent/JP2014085101A5/ja
Publication of JP5994569B2 publication Critical patent/JP5994569B2/ja
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Expired - Fee Related legal-status Critical Current
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Description

本発明による熱変換積層体の金属層は、赤外線反射層として構成されてよい。本発明による熱変換積層体の金属層は、特に限定されることないが、例えば、モリブデン（Ｍｏ）層、タングステン（Ｗ）層、銀（Ａｇ）層、金（Ａｕ）層、銅（Ｃｕ）層等が挙げられるが、モリブデン（Ｍｏ）層が好ましい。本発明による熱変換積層体の金属層の厚さは本発明の効果を奏すれば任意の厚さでよいが、少なくとも100nm以上の厚さであることが好ましい。

Claims (9)

  1. 少なくとも１種の半導体と透明誘電体とのコンポジット材を含み、太陽光を吸収して熱に変換する膜状の熱変換部材であって、
    前記半導体のバンドギャップが0.5eV以上1.2eV以下である、
    前記熱変換部材。
  2. 前記半導体がFeS 2 を含む、請求項１に記載の熱変換部材。
  3. 前記半導体がMg 2 Siを含む、請求項１に記載の熱変換部材。
  4. 前記半導体がZn 3 As 2 を含む、請求項１に記載の熱変換部材。
  5. 前記半導体がGeを含む、請求項１に記載の熱変換部材。
  6. 前記膜状の熱変換部材が1nmから10μmの厚さを有する、請求項１〜５のいずれか一項に記載の熱変換部材。
  7. 少なくとも、請求項１〜６のいずれか一項に記載の熱変換部材を含む少なくとも１つの層と、金属層とが積層されてなる、熱変換積層体。
  8. 太陽光の入射方向より、少なくとも、透明誘電体層と、請求項１〜６のいずれか一項に記載の熱変換部材を含む少なくとも１つの層と、金属層とが、この順序で積層されてなる、熱変換積層体。
  9. 前記熱変換部材は、1000nm〜2480nmの波長における光の吸収率の変化がサーメットの光の吸収率の変化よりも急峻である、請求項７又は８に記載の熱変換積層体。
JP2012237314A 2012-10-26 2012-10-26 熱変換部材及び熱変換積層体 Expired - Fee Related JP5994569B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012237314A JP5994569B2 (ja) 2012-10-26 2012-10-26 熱変換部材及び熱変換積層体
US14/437,694 US20150285532A1 (en) 2012-10-26 2013-10-07 Heat conversion member and heat conversion laminate
EP13849199.8A EP2913605A4 (en) 2012-10-26 2013-10-07 HEAT EXCHANGE ELEMENT AND HEAT CONVERSION LAMINATE
CN201380038881.XA CN104487785A (zh) 2012-10-26 2013-10-07 热转换构件以及热转换叠层体
PCT/JP2013/077251 WO2014065107A1 (ja) 2012-10-26 2013-10-07 熱変換部材及び熱変換積層体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012237314A JP5994569B2 (ja) 2012-10-26 2012-10-26 熱変換部材及び熱変換積層体

Publications (3)

Publication Number Publication Date
JP2014085101A JP2014085101A (ja) 2014-05-12
JP2014085101A5 true JP2014085101A5 (ja) 2015-05-21
JP5994569B2 JP5994569B2 (ja) 2016-09-21

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Family Applications (1)

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JP2012237314A Expired - Fee Related JP5994569B2 (ja) 2012-10-26 2012-10-26 熱変換部材及び熱変換積層体

Country Status (5)

Country Link
US (1) US20150285532A1 (ja)
EP (1) EP2913605A4 (ja)
JP (1) JP5994569B2 (ja)
CN (1) CN104487785A (ja)
WO (1) WO2014065107A1 (ja)

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* Cited by examiner, † Cited by third party
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WO2017170768A1 (ja) 2016-03-31 2017-10-05 新日鐵住金株式会社 熱光変換部材
JP2018174657A (ja) * 2017-03-31 2018-11-08 国立大学法人横浜国立大学 エネルギー変換装置及びその製造方法
US20230010741A1 (en) * 2021-07-08 2023-01-12 Arizona Board Of Regents On Behalf Of Arizona State University Semiconductor-based selective emitter for thermophotovoltaic energy conversion and method for fabricating the same

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